• Journal of the Semiconductor & Display Technology
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• v.13 no.3
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• pp.35-38
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• 2014

Flat panel displays fabricated on glass substrate use amorphous Si for data processing circuit. Recent progress in display technology requires a new material to replace the amorphous Si, and ZnO is a good candidate. ZnO is a wide bandgap (3.3 eV) semiconductor with high mobility and good optical transparency. ZnO is usually grown by sputtering using ZnO ceramic target. However, ceramic target is more expensive than metal target, and making large area target is very difficult. In this work we studied characteristics of ZnO thin-film transistor grown by rf sputtering using Zn metal target and $CO_2$. ZnO film was grown at $450^{\circ}C$ substrate temperature, with -70 V substrate bias voltage applied. By using these methods, our ZnO TFT showed $5.2cm^2/Vsec$ mobility, $3{\times}10^6$ on-off ratio, and -7 V threshold voltage.

• Korean Journal of Chemical Engineering
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• v.36 no.6
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• pp.975-980
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• 2019

Infrared (IR) spectroscopy is a powerful technique for observing organic molecules, as it combines sensitive vibrational excitations with a non-destructive probe. However, gaseous volatile compounds in the air are challenging to detect, as they are not easy to immobilize in a sensing device and give enough signal by themselves. In this study, we fabricated a thin nanocrystalline metal-organic framework (nMOF) film on a surface plasmon resonance (SPR) substrate to enhance the IR vibration signal of the gaseous volatile compounds captured within the nMOF pores. Specifically, we synthesized nanocrystalline HKUST-1 (nHKUST-1) particles of ca. 80 nm diameter and used a colloidal dispersion of these particles to fabricate nHKUST-1 films by a spin-coating process. After finding that benzene was readily adsorbed onto nHKUST-1, an nHKUST-1 film deposited on a plasmonic Au substrate was successfully applied to the IR detection of gaseous benzene in air using surface-enhanced IR spectroscopy.

• Journal of the Korean Society of Industry Convergence
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• v.25 no.2_2
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• pp.199-208
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• 2022

The steel wire or steel bar processing process applied to the manufacture of various bolts and power transmission shafts was improved by applying in-line phosphate film treatment technology. By applying a polymer lubricant for a non-reactive metal forming process and a non-reactive non-phosphorus lubricating coating agent, the film formation for each process time was comparatively analyzed and reviewed. Compared to the nine processes applied previously, the in-line phosphate film treatment technology applied with only two processes has been effectively improved in terms of reduction of treatment time, reduction of facility installation area, prevention of water pollution due to wastewater, and non-use of ozone-depleting substances. In addition, it was found that it can have an important effect on productivity improvement and price competitiveness from the simplification of quality control and process control as well as improvement of the working environment.

• Journal of Korean Vacuum Science & Technology
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• v.6 no.2
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• pp.55-57
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• 2002

Metal-vapor-vacuum-arc ion source is an ideal source for both high current metal ion implanter and high current plasma thin-film deposition systems. It uses the direct evaporation of metal from surface of cathode by vacuum arc to produce a very high flux of ion plasmas. The MEVVA ion source, the high-current metal-ion implanter and high-current magnetic-field-filtered plasma thin-film deposition systems developed in Beijing Normal University are introduced in this paper.

• Korean Journal of Materials Research
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• v.16 no.3
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• pp.151-156
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• 2006

A method for fabrication of nano-scale GaN structure by inductively coupled plasma etching is proposed, exploiting a thermal dewetting of Pt thin film as an etch mask. The nano-scale Pt metal islands were formed by the dewetting of 2-dimensional film on $SiO_2$ dielectric materials during rapid thermal annealing process. For the case of 30 nm thick Pt films, pattern formation and dewetting was initiated at temperatures greater $600^{\circ}C$. Controlling the annealing temperature and time as well as the thickness of the Pt metal film affected the size and density of Pt islands. The activation energy for the formation of Pt metal island was calculated to be 23.2 KJ/mole. The islands show good resistance to dry etching by a $CF_4$ based plasma for dielectric etching indicating that the metal islands produced by dewetting are suitable for use as an etch mask in the fabrication of nano-scale structures.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.25 no.5
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• pp.366-371
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• 2012

In this paper, fabricated by MEMS uncooled micro-bolometer detector for the study in the infrared sensitivity enhancement. Absorption layer SiOx-Metal series MDTF (metal-dielectric thin film) by high absorption rate and has a high thermal coefficient of resistance, low noise characteristics were implemented. Then MDTF were made in a vacuum deposition method. And MDTF for the analysis of the physical properties of silicon wafers were fabricated, TCR (temperature coefficient of resistance) value was made in order to measure the glass wafer and FT-IR (Fourier Transform Infrared spectroscopy) values were made in order to measure the germanium window. The analyzed results of MDTF -3 [%/K] has more characteristics of the TCR. And 8~12 um wavelength region close to 70% in the absorption characteristic.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07b
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• pp.723-726
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• 2002

We give pressure stimulation into organic thin films and then manufacture a device under the accumulation condition that the state surface pressure is 10[mN/m]. In processing of a device manufacture, we can see the process is good from the change of a surface pressure for organic thin films and transfer ratio of area per molecule. The structure of manufactured device is Au/Poly-$\gamma$ Benzyl $_D$-Glutamate/Al; the number of accumulated layers is 1, 3, 5 and 7. Also, we then examined of the MIM device by means of I-V. The I-V characteristic of the device is measured from 0 to +2[V]. We determined electrochemical measurement by using cyclic voltammetry with a three-electrode system. LB film accumulated by monolayer on an ITO. In the cyclicvoltammetry, An Ag/AgCl reference electrode, a platinum wire counter electrode and LB film-coated ITO working electrode measured in $LiBF_4$ solution, stable up to 0.9V vs. Ag/AgCl.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.14 no.6
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• pp.1465-1468
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• 2010

The wet etching is a process using chemical solution and occurring chemical reaction on substrate surface. when we do wet etching process, we have to consider stoichiometry, etching time and temperature of etchant for good resolution. In this experiment, we used Cr, Al andIndium-tin-oxide (ITO) metal and we deposited them with DC sputtering machine. The Cr thin film metal thickness is about $1300{\AA}$, ITO films show a low electrical resistance and high transmittance in the visible range of an optical spectrum and Ai film is used for signal line. We measured and analysed wet etching properties on the metal thin films.

• Journal of the Korean institute of surface engineering
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• v.39 no.3
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• pp.121-128
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• 2006

A set of Quartz Crystal Microbalances (QCM's) was used to observe the film removal characteristics of three different $CO_2-nitric$ acid microemulsions. QCM's electroplated with nickel or copper were used as specimens. F-AOT, NP-4 and the newly synthesized Proline Surfactant-1 were used as surfactants to create microemulsions. While the F-AOT microemulsion yielded a relatively low removal rate, that of the Proline Surfactant-1 completely removed the Cu metal film within a short period of time. The NP-4 microemulsion removed the metal surface. However, removal rate measurements per QCM were not possible due to the instability of the microemulsion when Cu ions were present in the nitric solution. The reaction kinetics and metal removal capabilities of microemulsions formed by the different surfactants are explained along with the characteristics of reverse micelles.

• Bulletin of the Korean Chemical Society
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• v.31 no.12
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• pp.3723-3729
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• 2010

We investigated the high-excitation voltage cathodoluminescence (CL) performance of blue light-emitting (ZnS:Ag,Al,Cl) and green light-emitting (ZnS:Cu,Al) phosphors coated with metal oxides ($SiO_2$, $Al_2O_3$, and MgO). Hydrolysis of the metal oxide precursors tetraethoxysilane, aluminum isopropoxide, and magnesium nitrate, with subsequent heat annealing at $400^{\circ}C$, produced $SiO_2$ nanoparticles, an $Al_2O_3$ thin film, and MgO scale-type film, respectively, on the surface of the phosphors. Effects of the phosphor surface coatings on CL intensities and aging behavior of the phosphors were assessed using an accelerating voltage of 12 kV. The MgO thick film coverage exhibited less reduction in initial CL intensity and was most effective in improving aging degradation. Phosphors treated with a low concentration of magnesium nitrate maintained their initial CL intensities without aging degradation for 2000 s. In contrast, the $SiO_2$ and the $Al_2O_3$ coverages were ineffective in improving aging degradation.