• Polymer(Korea)
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• v.24 no.3
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• pp.382-388
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• 2000

Polymer electrolyte films consisting of poly(vinylidenefluoride-hexafluoropropylene) (PVdF-HFP), LiClO$_3$ and a mixture of ethylene carbonate (EC) and ${\gamma}$-butyrolactone (GBL) were examined in order to obtain the best compromise between high ionic conductivity, homogeniety, dimensional and electrochemical stability. Measurements of ionic conductivity, differential scanning calorimetry and linear sweep voltammetry have been carried out for various compositions. The highest conductivity of 3.8$\times$10$^{-3}$ S$cm^{-1}$ / at 3$0^{\circ}C$ were obtained for a film of 30(PVdF-HFP)+7.8LiClO$_4$+62.2EC/GBL. From the DSC study, it has been found that the PVdF-HFP gels are stable up to 10$0^{\circ}C$, and the salt lowers the melting temperature of crystalline part of PVdF by interacting sensitively with polymer segments. When Lithium metal is in contact with the gel films, it tends to undergo corrosion and the reaction products accumulate resulting in the formation of a passive film on Li electrode. As the aging time progresses, the interfacial resistance increases continuously. Anodic stability is measured to extend up to about 4.5 V vs. Li.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.237.2-237.2
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• 2013

ReRAM cell, also known as conductive bridging RAM (CBRAM), is a resistive switching memory based on non-volatile formation and dissolution of conductive filament in a solid electrolyte [1,2]. Especially, Chalcogenide-based ReRAM have become a promising candidate due to the simple structure, high density and low power operation than other types of ReRAM but the uniformity of switching parameter is undesirable. It is because diffusion of ions from anode to cathode in solid electrolyte layer is random [3]. That is to say, the formation of conductive filament is not go through the same paths in each switching cycle which is one of the major obstacles for performance improvement of ReRAM devices. Therefore, to control of nonuniform conductive filament formation is a key point to achieve a high performance ReRAM. In this paper, we demonstrated the enhanced repeatable bipolar resistive switching memory characteristics by spreading the Ag nanocrystals (Ag NCs) on amorphous GeSe layer compared to the conventional Ag/GeSe/Pt structure without Ag NCs. The Ag NCs and Ag top electrode act as a metal supply source of our devices. Excellent resistive switching memory characteristics were obtained and improvement of voltage distribution was achieved from the Al/Ag NCs/GeSe/Pt structure. At the same time, a stable DC endurance (>100 cycles) and an excellent data retention (>104 sec) properties was found from the Al/Ag NCs/GeSe/ Pt structured ReRAMs.

• Resources Recycling
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• v.20 no.2
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• pp.67-73
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• 2011

In this study, for recovery of renewable noble metal from used stack of fuel cell, synthesis of platinum nano particle is established through effect of platinum solution concentration, pH value, reducing agent and dispersing agent at a volume ratio of 1 mM $H_2PtCl_6$:10 mM $NaBH_4$:8 mM Cl4TABr = 1:0.4:0.4(vol.%), pH4, $50^{\circ}C$, 160 rpm and 10min. Less than 5 nm platinum particles were synthesized using Pt leaching solution from used MEA of stack under same condition of method using simulated Pt solution. The characteristics of synthesized nano particles was illustrated by XPS analysis as the reduction of platinum ions into platinum metals(zero-valent).

• Nano
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• v.13 no.12
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• pp.1850141.1-1850141.11
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• 2018

Sodium ion batteries based on the more sodium source reserve than that of lithium have been designed as promising alternatives to lithium ion batteries. However, several problems including unsatisfied specific capacity and serious cyclic stability must be solved before the reality. One of the effective approaches to solve the abovementioned problems is to search for suitable anode materials. In this work, we designed and prepared $FeSe_2$ nanoflakes via a simple hydrothermal method which can be adjusted in composition by Fe precursor. As a potential anode for sodium storage, the optimized $FeSe_2$ electrode was further evaluated in different electrolytes of $NaClO_4$ in propylene carbonate/fluoroethylene carbonate and $NaCF_3SO_3$ in diethylene glycol dimethyl ether. The capacity was about $470mAh\;g^{-1}$ and $535mAh\;g^{-1}$ at $0.5A\;g^{-1}$, respectively, in the voltage between 0.5 V and 2.9 V in the cycle of stabilization phase. Superior performance both in capacity and in stability was obtained in ether-based electrolyte, which affords the property without plugging the intermediates of transition metal dichalcogenides during charge/discharge processes.

• Korean Journal of Materials Research
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• v.29 no.11
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• pp.697-702
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• 2019

In this study, using a wet chemical process, we evaluate the effectiveness of different solution concentrations in removing layers from a solar cell, which is necessary for recovery of high-purity silicon. A 4-step wet etching process is applied to a 6-inch back surface field(BSF) solar cell. The metal electrode is removed in the first and second steps of the process, and the anti-reflection coating(ARC) is removed in the third step. In the fourth step, high purity silicon is recovered by simultaneously removing the emitter and the BSF layer from the solar cell. It is confirmed by inductively coupled plasma mass spectroscopy(ICP-MS) and secondary ion mass spectroscopy(SIMS) analyses that the effectiveness of layer removal increases with increasing chemical concentrations. The purity of silicon recovered through the process, using the optimal concentration for each process, is analyzed using inductively coupled plasma atomic emission spectroscopy(ICP-AES). In addition, the silicon wafer is recovered through optimum etching conditions for silicon recovery, and the solar cell is remanufactured using this recovered silicon wafer. The efficiency of the remanufactured solar cell is very similar to that of a commercial wafer-based solar cell, and sufficient for use in the PV industry.

• Korean Journal of Metals and Materials
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• v.49 no.10
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• pp.811-817
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• 2011

In this study, we have investigated the role of a metal oxide hole injection layer (HIL) between an Indium Tin Oxide (ITO) electrode and an organic hole transporting layer (HTL) in organic light emitting diodes (OLEDs). Nickel Oxide films were deposited at different deposition times of 0 to 60 seconds, thus leading to a thickness from 0 to 15 nm on ITO/glass substrates. To study the influence of NiO film thickness on the properties of OLEDs, the relationships between NiO/ITO morphology and surface properties have been studied by UV-visible spectroscopy measurements and AFM microscopy. The dependences of the I-V-L properties on the thickness of the NiO layers were examined. Comparing these with devices without an NiO buffer layer, turn-on voltage and luminance have been obviously improved by using the NiO buffer layer with a thickness smaller than 10 nm in OLEDs. Moreover, the efficiency of the device ITO/NiO (< 5 nm)/NPB/$Alq_3$/ LiF/Al has increased two times at the same operation voltage (8V). Insertion of a thin NiO layer between the ITO and HTL enhances the hole injection, which can increase the device efficiency and decrease the turn-on voltage, while also decreasing the interface roughness.

• KEPCO Journal on Electric Power and Energy
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• v.7 no.1
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• pp.161-165
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• 2021

In general, SOFCs mainly use Ni-YSZ cermet, a mixture of Ni and YSZ, as an anode material, which is stable in a high-temperature reducing atmosphere. However, when SOFCs have operated at a high temperature for a long time, the structural change of Ni occurs and it results in the problem of reducing durability and efficiency. Accordingly, a development of a new anode material that can replace existing nickel and exhibits similar performance is in progress. In this study, SrTiO₃, which is a perovskite-based mixed conductor and one of the candidate materials, was used. In order to increase the electrical conduction properties, Y_0.08Sr_0.92Fe_0.3Ti_0.7O₃, doped with 0.08 mol of Y³⁺ in Sr-site and 0.03 mol of transition metal Fe³⁺ in Ti-site, was synthesized and its chemical diffusion coefficient and reaction constant were measured. Its electrical conductivity changes were also observed while changing the oxygen partial pressure at a constant temperature. The performance as a candidate electrode material was verified by predicting the defect area through the electrical conductivity pattern according to the oxygen partial pressure.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.22 no.3
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• pp.88-93
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• 2021

SAW (Submerged Arc Welding) is often used for ship construction or welding pressure vessels and involves spraying a flux in a powder form to a welding site to a certain thickness and continuously supplying electrode wires therein. This welding method enables high current welding up to 1,500 to 3,000 A. Arc efficiency is higher than 95% and the technique allows clean work as it creates less welding fume, which is composed of fine metal oxide particles, and the arc beam is not exposed. In this study, SM490C-TMC thick plates were heterogeneously welded by SAW. Mechanical properties of welds were measured, and welds were assessed macroscopically and for adhering magnetic particles. The following conclusions were drawn. Bending tests showed no spots exploded on sample surfaces or any other defect, and plastic deformation testing confirmed sufficient weld toughness. These results showed the 1F welding method has no shortcomings in terms of bending performance.

• Journal of the Microelectronics and Packaging Society
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• v.29 no.2
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• pp.73-79
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• 2022

In this study, a reaction study between Ga, which has recently been spotlighted as a low-temperature bonding material, and Cu, a representative electrode material, was conducted to investigate information necessary for low-temperature soldering applications. Interfacial reaction and intermetallic compound (IMC) growth were observed and analyzed by reacting Ga and Cu/Au substrates in the temperature range of 80-200℃. The main IMC growing at the reaction interface was CuGa₂ phase, and AuGa₂ IMC with small particle sizes was formed on the upper part and Cu₉Ga₄ IMC with a thin band shape on the lower part of the CuGa₂ layer. CuGa₂ particles showed a scallop shape, and the particle size increased without significant shape change as the reaction time increased, similar to the case of Cu₆Sn₅ growth. As a result of analyzing the CuGa₂ growth mechanism, the time exponent was calculated to be ~3.0 in the temperature range of 120-200℃, and the activation energy was measured to be 17.7 kJ/mol.

• New & Renewable Energy
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• v.18 no.1
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• pp.29-34
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• 2022

The most prevalent cause of solar cell efficiency loss is reduced recombination at the metal electrode and silicon junction. To boost efficiency, a a SiO_X/poly-Si passivating interface is being developed. Poly-Si for passivating contact is formed by various deposition methods (sputtering, PECVD, LPCVD, HWCVD) where the ploy-Si characterization depends on the deposition method. The sputtering process forms a dense Si film at a low deposition rate of 2.6 nm/min and develops a low passivation characteristic of 690 mV. The PECVD process offers a deposition rate of 28 nm/min with satisfactory passivation characteristics. The LPCVD process is the slowest with a deposition rate of 1.4 nm/min, and can prevent blistering if deposited at high temperatures. The HWCVD process has the fastest deposition rate at 150 nm/min with excellent passivation characteristics. However, the uniformity of the deposited film decreases as the area increases. Also, the best passivation characteristics are obtained at high doping. Thus, it is necessary to optimize the doping process depending on the deposition method.