• 한국수소및신에너지학회논문집
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• 제20권6호
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• pp.505-511
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• 2009

The hydriding and electrochemical characteristics of Zr-based $AB_2$ alloy produced by gas atomization have been extensively examined. For the particle morphology of the as-cast and gas-atomized powders, it can be seen that the mechanically crushed powders are irregular, while the atomized powder particles are spherical. The increase of jet pressure of gas atomization process results in the decrease of hydrogen storage capacity and the slope of plateau pressure significantly increases. TEM and EDS studies showed the increase of jet pressure in the atomization process accelerated the phase separation within grain of the gas-atomized alloy, which brought about a poor hydrogenation property. However, the gas-atomized $AB_2$ alloy powders produced by jet pressure of 50 bar kept up the reversible $H_2$ storage capacity and discharge capacity similar to the mechanically crushed particles. In addition, the electrode of gas-atomized Zr-based $AB_2$ alloy of 50 bar showed improved cyclic stability over that of the cast and crushed particulate, which is attributed to the restriction of crack propagation by grain boundary and dislocation with ch/discharging cycling.

• 한국군사과학기술학회지
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• 제6권3호
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• pp.54-61
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• 2003

$SnO_2$ gas sensor for the detection DMMP, simulant of nerve gas was fabricated and its characteristics were examined. Sensing materials were $SnO_2$ added by TEX>$\alpha$-$Al_{2}O_{3}$ with 0∼20wt.% and $In_{2}O_{3}$ with 0∼3wt.% and were physically mixed each material. They were deposited by screen printing method on alumina substrate. The sensor was consisted of sensing electrode with interdigit(IDT) type in front and a heater in back side. Its dimension was 7$\times$10$\times$0.6$\textrm{mm}^2$. Crystallite size 8t phase identification, specific surface area and morphology of fabricated $SnO_2$ powders were analyzed by X-ray diffraction(XRD), surface area analyzer(BET) and by a scanning electron microscope(SEM), respectively. Sensor was measured as flow type and sensor resistance change was monitored as real time using LabVIEW program. The best sensitivities were 75% at adding 4wt.% TEX>$\alpha$-$Al_{2}O_{3}$, operating temperature $300^{\circ}C$ and 87% at adding 2wt.% $In_{2}O_{3}$, operating temperature $350^{\circ}C$ to DMMP 0.5ppm. Response and recovery times were about 1 and 3 min., respectively. Repetition measurement was very good with $\pm$3% in full scale. As a result, operating temperature was lower TEX>$\alpha$-$Al_{2}O_{3}$ than $In_{2}O_{3}$, but sensitivity was higher $In_{2}O_{3}$ than $\alpha$-$Al_{2}O_{3}$.

• 자원리싸이클링
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• 제18권3호
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• pp.62-68
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• 2009

마그네슘 용융염 전해시 적정 조업조건을 확립하고자 자체 설계 제작한 150A급 mono-polar형 전해조를 사용하여 24시간 연속 전해 조업을 수행하였다. $MgCl_2$ 25%, NaCl 55%, $CaCl_2$ 19%, $CaF_2$ 1%의 전해욕 조성으로 전해온도 $720{\sim}740^{\circ}C$, 전해전압 7V, 음극 전류 밀도 $0.7-0.75A/cm^2$, 전극 간격 6cm의 운전조건에서 24시간 연속 조업을 수행하였으며, 전해 전압 및 전류 변화, 전해 욕 조성 변화, 전류 효율 등을 조사하였다. 시험결과 제작한 전해셀의 조업성이 양호하였으며, 순도 99% 이상의 금속 마그네슘을 회수하였고 전류효율 89%를 달성할 수 있었다. 본 연구를 통하여 마그네슘 용융염 전해장치 제작에 필요한 기초자료를 축적할 수 있었다.

• 한국전기전자재료학회논문지
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• 제29권3호
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• pp.168-174
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• 2016

A conductive oxide-based sapphire glass indium tin oxide/metal electrode and the optical coating, through patterning process was studied in excellent optical properties and integrated touch panel has a high strength. Indium tin oxide conductive oxides of the sapphire glass to 0.3 A at DC magnetron sputtering method of 10 min, gas flow Ar 10 Sccm Ar, $O_2$ 1.0 Sccm the formation conditions of the thin film after annealing at $550^{\circ}C$ for 30min was achieved through a 86% transmittance. In addition, the coating 130 nm hollow silica sol-gel was to improve the optical transmittance of the indium tin oxide to 91%. For the measurement by the modeling hollow silica sol by Macleod simulation and calculated the average values of silica part to the presence or absence in analogy to actual. Refractive index value and the actual value of the material on the simulation the transmittance difference is it does not completely match the air region similar to the actual value (transmission) could be confirmed that the measurement is set to a value of between 5 nm and 10 nm.

• Bulletin of the Korean Chemical Society
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• 제34권2호
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• pp.433-436
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• 2013

Carbon-coated $Li_3V_2(PO_4)_3-LiMnPO_4$ composite cathode materials are first reported in this work, prepared by the mechanochemical process with a complex metal oxide as the precursor and sucrose as the carbon source. X-ray diffraction pattern of the composite material indicates that both olivine $LiMnPO_4$ and monoclinic $Li_3V_2(PO_4)_3$ co-exist. We further investigated the electrochemical properties of our $Li_3V_2(PO_4)_3-LiMnPO_4$ composite cathode materials using galvanostatic charging/discharging tests, where our $Li_3V_2(PO_4)_3-LiMnPO_4$ composite electrode materials exhibit the charge/discharge efficiency of 91.9%, while $Li_3V_2(PO_4)_3$ and $LiMnPO_4$ exhibit the efficiency of 87.7 and 86.7% in the first cycle. The composites display unique electrochemical performances in terms of overvoltage and cycle stability, displaying a reduced gap of 141.6 mV between charge and discharge voltage and 95.0% capacity efficiency after $15^{th}$ cycles.

• 한국수소및신에너지학회논문집
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• 제3권2호
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• pp.25-33
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• 1992

With the aim to obtain $TiO_2$ films with an increased photorespones and absorbance in the visible region of the solar spectrum, the direct oxidation of titanium alloys were performed. In this study, $Ti-Ga_2O_3$ alloy was prepared by mixing, pressing and arc melting of appropriate amounts of titanium and $Ga_2O_3$ powder. Electrochemical measurements were performed in three electrode cell using electrolyte of 1M NaOH solution. The oxide films on $Ti-Ga_2O_3$ alloy was composed of $Ti_2O$, TiO, $TiO_2$, $Ga_2TiO_5$. The free energy efficiency (${\eta}e$) of $Ti-Ga_2O_3$ oxide films had 0.8~1.3 % and were increased with the increase of $Ga_2O_3$ content up to 10wt %. The onset potential ($V_{on}$) had -0.8V~0.9V ranges and were shifted to anodic direction with the increase of $Ga_2O_3$ content. The spectral response of Ti-$Ga_2O_3$ oxides were similar to the response of the $TiO_2$ and their $E_g$ were observed to 2.90~3.0eV. Variations of onset potential($V_{on}$) associated with electrolyte pH were -59mV/pH. This probably reflects the nature of the bonding of $OH^-$ ion to the $TiO_2$ surface, a common phenomena in the transition-metal oxides.

• 대한전기학회논문지
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• 제41권5호
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• pp.525-532
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• 1992

Fluorine-doped YBaS12TCuS13TOS17-xTFS1yT superconducting materials with y varing two orders of magnitude form 0.02 to 2.0 have been prepared by a sol-gel process by using metal nitrate salts, sodium hydroxide and sodium fluoride. Fluorine contents have been measured using an ion-selective electrode. All fluorine doped as reactant were found to be present in the resulted samples. From the observation of XRD it has been concluded that the samples with y 0.2 formed simply the single phase of perovskite structure, whereas those with y 0.5 yielded together some compounds such as BaFS12T, YFS13T and CuO in the resulted samples. The observation of solid state S019TF NMR has been carried out in order to check whether fluorine was actually incorporated into the lattice sites, and the experimental results revealed that the mole ratio of fluorine incorporated into the lattice sites of YBaS12TCuS13TOS17-xT was approximately 0.2 per mole of the compound. Also electrical resistivity measurement indicated that onset transition temperature has the tendency to increase slightly with increasing y in the dilute region as y 0.2.

• Transactions on Electrical and Electronic Materials
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• 제1권3호
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• pp.14-17
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• 2000

Giga bit dynamic random access memory(DRAM) requires the capacitor of high dielectric films. Some metal oxides films have been proposed as the dielectric material . And Pt is one of the most promising electrode materials. However very little has been done in developing the etching technologoy Pt film. Therefore, it is the first priority to develop the technology for plasma etching of Pt film. In this study, the dry etching of Pt film was investigated in Inductively Coupled Plasma(ICP) etching system with Cl$_2$/Ar and HBr/Cl$_2$/Ar gas mixing. X-ray photoelectron spectroscopy (XPS) was used in analysis of sidewall residues for the understanding of etching mechanism. We found the etch residues on the pattern sidewall is mainly Pt-Pt, Pt-Cl and Pt-Br compounds, Etch profile was observed by Scanning Electron Spectroscopy(SEM) . The etch rate of Pt film at 10%, Cl$_2$/90% Ar gas mixing ration was higher than at 100%. Ar. Addition of HBr to Cl$_2$/Ar as an etching gas led to generally higher selectivity to SiO$_2$. And the etch residues were reduced at 5% HBr/5% Cl$_2$/90% Ar gas mixing ration. These pages provide you with an examples of the layout and style which we wish you to adopt during the preparation of your paper, Make the width of abstract to be 14cm.

• 한국표면공학회지
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• 제53권5호
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• pp.241-248
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• 2020

The change of the deposition behavior of diamond through a pretreatment process of the base metal prior to diamond deposition using HFCVD was investigated. To improve the specific surface area of the base material, sanding was performed using sandblasting first, and chemical etching treatment was performed to further improve the uniform specific surface area. Chemical etching was performed by immersing the base material in HCl solutions with various etching time. Thereafter, seeding was performed by immersing the sanded and etched base material in a diamond seeding solution. Diamond deposition according to all pretreatment conditions was performed under the same conditions. Methane was used as the carbon source and hydrogen was used as the reaction gas. The most optimal conditions were found by analyzing the improvement of the specific surface area and uniformity, and the optimal diamond seeding solution concentration and immersion time were also obtained for the diamond particle seeding method. As a result, the sandblasted base material was immersed in 20% HCl for 60 minutes at 100 ℃ and chemically etched, and then immersed in a diamond seeding solution of 5 g/L and seeded using ultrasonic waves for 30 minutes. It was possible to obtain optimized economical diamond film growth rates.

• 센서학회지
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• 제29권6호
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• pp.407-411
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• 2020

In this study, we propose an array-type gas sensor with high selectivity and response using multiple oxide semiconductors. The sensor array was composed of SnO₂ and In₂O₃, and the detection characteristics were improved by using Pt, Au, and Pd catalysts. All samples were deposited directly on the Pt interdigitated electrode (IDE) through the e-beam evaporator glancing angle deposition (GAD) method. They grew in the form of well-aligned nanorods at off-axis angles. The prepared SnO₂ and In₂O₃ nanorod samples were exposed to CH₃COCH₃, C₇H₈, and NO₂ gases in a 300℃ dry condition. Au-decorated SnO₂, Au-decorated In₂O₃, and Pd-decorated In₂O₃ exhibited high selectivity for CH₃COCH₃, C₇H₈, and NO₂, respectively. They demonstrated a high detection limit of the sub ppb level computationally. In addition, measurements from each sensor were executed in the 40% relative humidity condition. Although there was a slight reduction in detection response, high selectivity and distinguishable detection characteristics were confirmed.