• 공업화학
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• 제16권4호
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• pp.527-532
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• 2005

이온성고분자-금속복합체(Ionic Polymer Metal Composites, IPMC)는 전기활성 고분자이며, 낮은 구동전압에서도 큰 변위를 나타내는 유연한 스마트 소재(soft smart material)이다. 이온성고분자-금속복합체의 표면전극 제조는 일반적으로 화학적 환원방법(무전해 전기도금)에 의해 제조되고 있지만, 이러한 방법에서는 그 재료가 다공성 고분자 막으로 표면이 균일한 전극을 제조하기에 어려움이 있다. 본 연구에서는 전극의 표면 저항을 감소시켜 응답속도를 증가시킴과 동시에 낮은 전압에서 큰 변위를 낼 수 있는 IPMC 제조방법을 고안하여 수행하였다. 화학적 환원방법으로 이온고분자-금속 복합체를 형성시킨 후, 이온빔보조증착법(Ion Beam Assisted Deposition)으로 균질한 표면 전극 층을 형성시켜 화학적 특성을 개선하여 전기적 자극에 의한 구동반응 속도를 향상시킬 수 있는 구동체 제조방법을 제안하였다.

• 한국전기전자재료학회논문지
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• 제27권5호
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• pp.276-281
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• 2014

A high-responsive Schottky device has been achieved by forming a thin metal deposition on a Si substrate. Two-different metals of Ni and Ag were used as a Schottky metal contact with a thickness about 10 nm. The barrier height formation between metal and Si determines the rectifying current profiles. Ag-embedding Schottky device gave an extremely high response of 17,881 at a wavelength of 900 nm. An efficient design of Schottky device may applied for photoelectric devices, including photodetectors and solar cells.

• 한국전기전자재료학회논문지
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• 제14권7호
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• pp.533-538
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• 2001

The barrier height is found to increase from 0.25 to 0.690 eV for Schottky contacts on n-InGaAs using deposition of Ag on a substrate cooled to 77K(LT). Surface analysis leads to an interface model for the LT diode in which there are oxide compounds of In:O and As:O between the metal and semiconductor, leading to behavior as a metal-insulator-semiconductor diode. The metal film deposited t LT has a finer and more uniform structure, as revealed by scanning electron microscopy and in situ metal layer resistance measurement. This increased uniformity is an additional reason for the barrier height improvement. In contrast, the diodes formed at room temperature exhibit poorer performance due to an unpassivated surface and non-uniform metal coverage on a microscopic level.

• Journal of Welding and Joining
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• 제22권2호
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• pp.46-50
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• 2004

In today's highly competitive marketplace, it is of great significance for the manufacturing industry to reduce lead-time and costs fur the product development. Since first emerged in 1986, Rapid Prototyping (RP) technology has helped successfully to reduce time and costs. Recently, RP using functional materials such as metal has been researched. However RP using the molten metal has been struggling to resolve several drawbacks, such as dimensional inaccuracy, poor surface finish, post finishing, etc., that originate primarily from the overall deposition of molten metal for each layer. So, the purpose of this study is to develop a new RP technique using sheet metal and projection welding for reducing several drawbacks in occurring RP using molten metal. Also tensile and bending specimens were made by the developed RP process using projection welding and were verified.

• Journal of Welding and Joining
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• 제34권4호
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• pp.1-8
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• 2016

Metal AM(Additive Manufacturing) has been steadily developed and that is classified into two method. PBF(Powder Bed Fusion) deposited in the bed by the laser or electron beam as a heat source of the powder material and DED(Directed Energy Deposition) deposited by varied heat source of powder and solid filler material. In the developed countries has been applying high productivity process of solid filler metal based DED method to the aerospace and defense sectors. The price of the powder material is quite expensive compared to the solid filler metal. A study on DED method that is based on a solid filler metal is increasing significantly although was low accuracy and degree of freedom.

• 한국세라믹학회지
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• 제53권3호
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• pp.317-324
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• 2016

Continued miniaturization and increasingly exact requirements for thin film deposition in the semiconductor industry is driving the search for new effective, efficient, selective precursors and processes. The requirements of defect-free, conformal films, and precise thickness control have focused attention on atomic layer deposition (ALD). ALD precursors so far have been developed through a trial-and-error experimental approach, leveraging the expertise and tribal knowledge of individual research groups. Precursors can show significant variation in performance, depending on specific choice of co-reactant, deposition stage, and processing conditions. The chemical design space for reactive thin film precursors is enormous and there is urgent need for the development of computational approaches to help identify new ligand-metal architectures and functional co-reactants that deliver the required surface activity for next-generation thin-film deposition processes. In this paper we discuss quantum mechanical simulation (e.g. density functional theory, DFT) applied to ALD precursor reactivity and state-of-the-art automated screening approaches to assist experimental efforts leading toward optimized precursors for next-generation ALD processes.

• 한국전기전자재료학회논문지
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• 제21권5호
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• pp.411-414
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• 2008

The germanium films were deposited by metal organic chemical vapor deposition using $Ge(allyl)_4$ precursors on TiAlN substrates. Deposition of germanium films was only possible with a presence of $Sb(iPr)_3$, which means that $Sb(iPr)_3$ takes a catalytic role by a thermal decomposition of $Sb(iPr)_3$ for Ge film deposition. Also, as Sb bubbler temperature increases, deposition rate of the Ge films increases at a substrate temperature of $370^{\circ}C$. The GeTe thin films were fabricated by MOCVD with $Te(tBu)_2$ on Ge thin film. The GeTe films were grown by the tellurium deposition at $230-250^{\circ}C$ on Ge films deposited on TiAlN electrode in the presence of Sb at $370^{\circ}C$. The GeTe film growth on Ge films depends on the both the tellurium deposition temperature and deposition time. Also, using $Sb(iPr)_3$ precursor, GeSbTe films with hexagonal structures were fabricated on GeTe thin films. GeSbTe films were deposited in trench structure with 200 nm*120 nm small size.

• 한국재료학회지
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• 제19권6호
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• pp.319-324
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• 2009

The deposition behavior and structural and magnetic properties of electroless Co-B and Co-Fe-B deposits, as well as the amorphous ribbon substrates, were investigated. These Co-based alloy deposits exhibited characteristic polycrystalline structures and surface morphology and magnetic properties that were dependent on the type of amorphous substrates. The catalytic activity sequence of the amorphous ribbon electrodes for anodic oxidation of DMAB was estimated from the current density-potential curve in the anodic partial electrolytic bath that did not contain the metal ions. Both the deposition rate and potential in the initial region were obtained in order of the catalytic activity, depending on the alloy compositions of the substrates. The deposition rate linearly varied against the deposition time. The initial deposition potential may have also determined the structural and magnetic properties of the deposit based on the thickness of ${\mu}m$ order. Furthermore, a basic study of the electroless deposition processes on an amorphous ribbon substrate has been carried out in connection with the structural and magnetic properties of the deposits.

• Bulletin of the Korean Chemical Society
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• 제23권2호
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• pp.225-228
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• 2002

Amorphous $Ga_2O_3$ films have been grown on Si(100) substrates by metal organic chemical vapor deposition (MOCVD) using gallium isopropoxide, $Ga(O^iPr)_3$, as single precursor. Deposition was carried out in the substrate temperature range 400-800 $^{\circ}C$. X-ray photoelectron spectroscopy (XPS) analysis revealed deposition of stoichiometric $Ga_2O_3$ thin films at 500-600 $^{\circ}C$. XPS depth profiling by $Ar^+$ ion sputtering indicated that carbon contamination exists mostly in the surface region with less than 3.5% content in the film. Microscopic images of the films by scanning electron microscopy (SEM) and atomic force microscopy (AFM) showed formation of grains of approximately 20-40 nm in size on the film surfaces. The root-mean-square surface roughness from an AFM image was ${\sim}10{\AA}$. The interfacial layer of the $Ga_2O_3$/Si was measured to be ${\sim}35{\AA}$ thick by cross-sectional transmission electron microscopy (TEM). From the analysis of gaseous products of the CVD reaction by gas chromatography-mass spectrometry (GC-MS), an effort was made to explain the CVD mechanism.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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• pp.319-319
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• 2013

Even though the fabrication methods of metal oxide based thin film capacitor have been well established such as RF sputtering, Sol-gel, metal organic chemical vapor deposition (MOCVD), ion beam assisted deposition (IBAD) and pulsed laser deposition (PLD), an applicable capacitor of printed circuit board (PCB) has not realized yet by these methods. Barium Strontium Titanate (BST) and other high-k ceramic oxides are important materials used in integrated passive devices, multi-chip modules (MCM), high-density interconnect, and chip-scale packaging. Thin film multi-layer technology is strongly demanded for having high capacitance (120 nF/$mm^2$). In this study, we suggest novel multi-layer thin film capacitor design and fabrication technology utilized by plasma assisted deposition and photolithography processes. Ba0.6Sr0.4TiO3 (BST) was used for the dielectric material since it has high dielectric constant and low dielectric loss. 5-layered BST and Pt thin films with multi-layer sandwich structures were formed on Pt/Ti/$SiO_2$/Si substrate by RF-magnetron sputtering and DC-sputtering. Pt electrodes and BST layers were patterned to reveal internal electrodes by photolithography. SiO2 passivation layer was deposited by plasma-enhanced chemical vapor deposition (PE-CVD). The passivation layer plays an important role to prevent short connection between the electrodes. It was patterned to create holes for the connection between internal electrodes and external electrodes by reactive-ion etching (RIE). External contact pads were formed by Pt electrodes. The microstructure and dielectric characteristics of the capacitors were investigated by scanning electron microscopy (SEM) and impedance analyzer, respectively. In conclusion, the 0402 sized thin film multi-layer capacitors have been demonstrated, which have capacitance of 10 nF. They are expected to be used for decoupling purpose and have been fabricated with high yield.