Journal of the Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회논문지)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
권호 표지
DOI QR코드

DOI QR Code

Metal-Oxide-Semiconductor Photoelectric Devices

Metal-Oxide-Semiconductor 광전소자

  • Kang, Kilmo (Department of Electrical Engineering, Incheon National University) ;
  • Yun, Ju-Hyung (Department of Electrical Engineering, University at Buffalo, State University of New York) ;
  • Park, Yun Chang (Measurement and Analysis Division, National Nanofab Center (NNFC)) ;
  • Kim, Joondong (Department of Electrical Engineering, Incheon National University)
  • 강길모 (인천대학교 전기공학과) ;
  • 윤주형 (뉴욕주립 버팔로대학교 전기공학과) ;
  • 박윤창 (나노종합기술원 특성평가실) ;
  • 김준동 (인천대학교 전기공학과)
  • Received : 2014.03.10
  • Accepted : 2014.04.08
  • Published : 2014.05.01
Download PDF
⟨ Previous Next ⟩

Abstract

A high-responsive Schottky device has been achieved by forming a thin metal deposition on a Si substrate. Two-different metals of Ni and Ag were used as a Schottky metal contact with a thickness about 10 nm. The barrier height formation between metal and Si determines the rectifying current profiles. Ag-embedding Schottky device gave an extremely high response of 17,881 at a wavelength of 900 nm. An efficient design of Schottky device may applied for photoelectric devices, including photodetectors and solar cells.

Keywords

References

  1. C. Y. Liu and U. R. Kortshagen, Nanoscale Research Letters, 5, 1253 (2010). https://doi.org/10.1007/s11671-010-9632-z
  2. S. H. Hong, J. H. Yun, H. H. Pakr, and J. Kim, Appl. Phys. Lett., 103, 153504 (2013). https://doi.org/10.1063/1.4824688
  3. K. P. Pande, IEEE, ED-27, 4 (1980).
  4. O. Janil, I. Ferguson, C. Honsberg, and S. Kurtz, American Institute of Physics, 91, 132117 (2007).
  5. Y. Uehara, J. Watanabe, S. Fujikawa, and S. Ushioda, Phys. Rev. B, 51, 2229 (1995). https://doi.org/10.1103/PhysRevB.51.2229
  6. E. J. Lee, D. S. Kim, and S. H. Lee, Sol. Energ. Mat. Sol. C., 74, 65 (2002). https://doi.org/10.1016/S0927-0248(02)00049-1
  7. A. Yakimov and S. R. Forrest, Appl. Phys. Lett., 80, 1667 (2002). https://doi.org/10.1063/1.1457531
  8. H. Kim, J. Cho, Y. Park, and T. Y. Seong, Appl. Phys. Lett., 92, 092115 (2008). https://doi.org/10.1063/1.2844887