• 한국재료학회:학술대회논문집
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• 한국재료학회 2011년도 추계학술발표대회
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• pp.19.1-19.1
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• 2011

We report on the metal-insulator transition that occurs as a function of film thickness in ultrathin $La_{0.75}Sr_{0.25}VO_3$ films. The metal-insulator transition displays a critical thickness of 5 unit cell. Above the critical thickness, metallic films exhibit a temperature driven metal-insulator transition with weak localization behavior. With decreasing film thickness, oxygen octahedron rotation in the films increases, causing enhanced electron-electron correlation. The electron-electron correlations in ultrathin films induce the transition from metal to insulator in addition to Anderson localization.

• 한국전자파학회논문지
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• 제14권6호
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• pp.648-654
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• 2003

본 논문에서는 비 산화물인 불소화합물 게이트절면막을 이용하여 박막반도체 다이아몬드 MS계면(Metal-Insulator-Semiconductor Interface)의 전기적 안정화를 실현하였다. 특히 산소 게터링 효과(Oxygen-Gettering Effect)에 의한 표면준위 억제를 통해, 박막반도체 다이아몬드 MIS계면에 있어서 최적의 전기적 특성을 부여하는 BiF2 게이트절연막을 개발하였다. 본 논문의 결과에 의하면, BaF$_2$ 게이트 절연막을 이용하여 제작한 A1/BaF2/diamond MIS 다이오드와 MISFET(Metal-Insulator-Semiconductor Field Effect Transistor)로부터 저농도의 ~10101/$\textrm{cm}^2$ eV의 표면준위밀도가 관측되었고, 그리고 이제까지 발표된 다이아몬드 박막반도_체 FET중 최고치인 400 $\textrm{cm}^2$/Vs의 유효이동도가 관찰되었다.

• JSTS:Journal of Semiconductor Technology and Science
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• 제16권2호
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• pp.147-152
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• 2016

In this study, we fabricated Ag-based electrochemical metallization memory devices which is also called conductive-bridge random-access memory (CBRAM) in order to investigate the resistive switching behavior depending on the bottom electrode (BE). RRAM cells of two different layer configurations having $Ag/Si_3N_4/TiN$ and $Ag/Si_3N_4/p^+$ Si are studied for metal-insulator-metal (MIM) and metal-insulator-silicon (MIS) structures, respectively. Switching voltages including forming/set/reset are lower for MIM than for MIS structure. It is found that the workfunction different affects the performances.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 하계학술대회 논문집 Vol.9
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• pp.373-374
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• 2008

Insulating polymers and their composites have been widely used in various electric apparatus or cables. Recently, the effects of interfaces (metal/insulator or insulator/insulator interfaces) on electrical insulation have attracted much attention. However, interfacial phenomena in actual insulation systems and their physical backgrounds are not well understood yet. In this paper, the behaviour of charge carriers near the metal/polymer interface and its effects on conduction and breakdown phenomena are discussed. The metal/polymer interface strongly affects carrier injection, space charge formation and breakdown phenomena. Based on their experimental results, the physical backgrounds of the interfacial phenomena are explained.

• 한국세라믹학회:학술대회논문집
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• 한국세라믹학회 2000년도 추계총회,초청강연,특별강연,연구발표회
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• pp.190.1-190
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• 2000

• 대한전기학회:학술대회논문집
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• 대한전기학회 1997년도 하계학술대회 논문집 C
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• pp.1443-1445
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• 1997

This paper presents an analysing method to find out an optimum metal shape for insulation strength of SCI(Silicone Composite Insulator). Using finite element method, the interested parameters of the configuration such as a aspect of metal/silicone composite and a material properties are investigated and derived a thread of optimum design parameters.

• 통합자연과학논문집
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• 제3권1호
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• pp.7-18
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• 2010

Ethylene-bridged silsesquioxane resins were synthesized from two monomers: 1,2-bis(trimethoxysilyl)ethane and methyltrimethoxysilane. The silsesquioxane thin films were spin-coated from the copolymerized resins on silicon wafer. Metal insulator metal (MIM), metal insulator semiconductor (MIS) devices were utilized to investigate the electrical properties of the copolymerized thin films. As the films were inserted as gate insulator in the OTFT devices, the field effect mobilitites were evaluated by employing Poly(3-hexylthiophene) (P3HT) as organic semiconductor, which shows that their dielectric properties and mobility values are dependent on the molecular structures and Si-OH concentration involving in the films.

• 한국자기학회:학술대회 개요집
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• 한국자기학회 2003년도 하계학술연구발표회 및 한.일 공동심포지엄
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• pp.74-75
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• 2003

• 한국화재소방학회논문지
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• 제28권1호
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• pp.26-30
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• 2014

보상식 화재 감지기는 일정한 온도 상승률 이상으로 빠르게 상승하는 경우에 작동하는 차동식 화재 감지기의 기능과 정온점에 이르렀을 때 작동하는 정온식 화재 감지기의 기능을 모두 가진 감지기다. 이 화재 감지기는 정온점 이하에서 발생하는 화재를 감지하지 못하는 정온식 화재 감지기의 단점과 불꽃없이 천천히 타는 현상과 같이 천천히 열이 증가하는 화재를 감지하지 못하는 차동식 화재 감지기의 단점을 보완하기 위해 개발된다. 이것을 위해 우리는 이 감지기의 센서로 금속-절연체 전이 임계온도센서를 이용했는데 이 센서의 감도를 결정하는 저항온도계수가 $55^{\circ}C$일 때 14.15%로써, 서미스터(약 0.5%)보다 큰 값이다. 이 센서는 하나의 센서가 정온점 이하에서는 차동 기능, 정온점 이상에서는 정온 기능을 모두 가진다.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2001년도 하계종합학술대회 논문집(2)
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• pp.273-276
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• 2001

The origin of image-slicking in metal-insulator-metal type thin-film-diode(TFD) LCDs is the asymmetric current-voltage(I-V) characteristic of TFD element. we developed that MIM-LCDs have reduced-image-sticking and perfect symmetry characteristic. One-Time Post-Annealing (OPTA) heat treatment process was introduced to reduce the asymmetry and shift of the I-V characteristics, respectively. OPTA means that the whole layers of lower metal, insulator, and uuper metal are annealed at one time. The treatment temperatures and fabricated process of TFD element were under foot. Also, this low temperature fabricated process allows the application of plastic substrates.