• IE interfaces
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• v.8 no.3
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• pp.241-248
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• 1995

Fa SI(Sysrem Intergration)분야에 있어서 PLC(Programmable Logic Controller)와 컴퓨터간의 접속은 필수 불가결한 요소기술로 자리잡고 있으며, 이러한 기술변화에 맞춰서 기존 유니트의 기술적 발전뿐 아니라 타 유니트와 접속등의 네트워킹에 관련된 내용이 하드웨어, 소트프웨어적으로 발전되고 있는 추세이다. 시스템통합을 하기 위해서는 기본적으로 PLC Networking을 하드웨어, 소프트웨어적으로 수행하여야 하나, 많은 연구들이 PLC 통신 유니트의 기술적 향상 및 표준화에 대한 부분으로 되어왔었다. 본 논문은 정보시스템을 구축할 때 PLC에서 처리하여야 하는 데이터, 혹은 컴퓨터와 송수신 받아야 하는 자료들에 대한 내용과 이들 자료를 PLC 내부에서 처리하는 방법론에 대해 기술코자 한다. 일반적인 Interface 방법으로 접점연결(Point to Point Connection)과 컴퓨터링크유니트에 대한 내용을 파악해보고, 설비고장진단 및 이상발생에 대한 추적이 가능하도록 PLC Memory내에 PLC접점데이타를 직접접근방식(Direct Accssing Method)과 간접접근방식 (Indirect Accssing Method)으로 구분하고, 간접접근방식을 요소(Element), 동작(Event)에 의한 방법론을 이용하여 PLC DATA를 처리토록 하는 내용을 설명하고자 한다.

• The Transactions of the Korea Information Processing Society
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• v.4 no.8
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• pp.1921-1929
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• 1997

This paper describes a direct transmission method of multimedia data stream between a multimedia data processor and a communication interface without using system memory. I propose the direct transfer method of multimedia data through the single data path, without additional data path between a multimedia data processor and a communication interface in multimedia platforms. The hardware architecture and functions for the direct transfer method is defined. Procedure to transfer multimedia data to and from the multimedia data processor is described by means of control flow chart. Comparing the proposed method with general methods, I show that the proposed method can decrease number of bus accesses and bus cycles.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1997.11a
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• pp.21-24
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• 1997

Ferroeletric LiNbO$_3$ thin films hale been prepared directly on Si(100) substrates by conventional RF magnetron spurttering system for nonvolatile memory applications. As-deposited films were performed RTA(Rapid Thermal Annealing) treatment in an oxygen atmosphere at 600 $^{\circ}C$ for 60 s. The rapid thermal annealed films were changed to poly-crystalline ferroelectric nature from amorphous of as-deposition. The resistivity of the ferroelectric LiNbO$_3$ film was increased from a typical vague of 1~2$\times$10$^{8}$ $\Omega$.cm before the annealing to about 1$\times$10$^{13}$ $\Omega$.cm at 500 kV/cm and reduce the interface state density of the LiNbO$_3$/Si(100) interface to about 1$\times$10$^{11}$ cm$^2$ . eV. Ferroelectric hysteresis measurements using a Sawyer-Tower circuit yielded remanent polarization (Pr) and coercive field (Ec) values of about 1.2 $\mu$C/cm$^2$ and 120 kV/cm, respectively.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.6 no.5
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• pp.689-695
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• 2002

Film compositions are needed in semiconductor manufacturing for such diverse application as production tool qualifications and process development. Surface and interface information is generally provided with Auger electron spectroscopy(AES). In this paper, WSix films were analyzed for structural, electrical, and compositional properties of tungsten silicide thin films produced by low pressure chemical vapor deposition as a function of temperature, DCS post flow, shower head life time, and the silicon to tungsten ratios have been investigated. We find that Si/W composition ratio is increased in the surface and interface of WSix thin films by the DCS post flow process and increasing deposition temperature, respectively. The results obtained in this study are also applicable to process control of WSix deposition for memory device fabrication.

• The KIPS Transactions:PartA
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• v.9A no.4
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• pp.421-428
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• 2002

In this paper, we have developed an E-book reader for EBKS XML documents on the embedded Linux environment. This reader operated on a Linux target board parses the EBKS XML documents using the Qt SAX interface and displays the parsed pages through the QWS (Qt Windows System) which is a cross-platform windows toolkit. This reader can be easily and rapidly developed on Linux as well as MS windows and requires less memory than DOM interfaces because it parses with SAX interface.

• Computers and Concrete
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• v.2 no.5
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• pp.345-366
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• 2005

This work presents an assessment of the computational performance of a vector-parallel implementation of probabilistic model for concrete cracking in 3D. This paper shows the continuing efforts towards code optimization as reported in earlier works Paz, et al. (2002a,b and 2003). The probabilistic crack approach is based on the direct Monte Carlo method. Cracking is accounted by means of 3D interface elements. This approach considers that all nonlinearities are restricted to interface elements modeling cracks. The heterogeneity governs the overall cracking behavior and related size effects on concrete fracture. Computational kernels in the implementation are the inexact Newton iterative driver to solve the non-linear problem and a preconditioned conjugate gradient (PCG) driver to solve linearized equations, using an element by element (EBE) strategy to compute matrix-vector products. In particular the paper analyzes code behavior using OpenMP directives in parallel vector processors (PVP), such as the CRAY SV1 and CRAY T94. The impact of the memory architecture on code performance, and also some strategies devised to circumvent this issue are addressed by numerical experiment.

• Proceedings of the Korea Information Processing Society Conference
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• 2021.05a
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• pp.151-154
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• 2021

Rust is a promising system programming language that made its debut in 2010. It was developed to address the security problems in C/C++. It features a property called ownership, on which it relies to mitigate memory attacks. For this and its many other features, the language has consistently gained popularity and many companies have begun to seriously consider it for production uses. However, Rust also supports safe and unsafe regions under which the foreign function interface (FFI), used to port to other languages, falls. In the unsafety region, Rust surrenders most of its safety features, allowing programmers to perform operations without check. In this study, we analyze the security issues that arise due to Rust's safety/unsafety property, especially those introduced by Rust FFI.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.11 no.6
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• pp.436-441
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• 1998

$Pt/SrTiO_3/Pb_x(Zr_{0.52}, Ti_{0.48})O_3/SrTiO_3/Si$ structure was prepared by rf-magnetron sputtering method for use in nondestructive read out ferroelectric RAM(NDRO-FEAM). PBx(Zr_{0.52}Ti_{0.48})O_3}$(PZT) and $SrTiO_3$(STO) films were deposited respectively at the temperatures of $300^{\circ}C and 500^{\circ}C$on p-Si(100) substrate. The role of the STO film as a buffer layer between the PZT film and the Si substrate was studied using X-ray diffraction (XRD), Auger electron spectroscopy (ASE), and scanning electron microscope(SEM). Structural analysis on the interfaces was carried out using a cross sectional transmission electron microscope(TEM). For PZT/Si structure, mostly Pb deficient pyrochlore phase was formed due to the serious diffusion of Pb into the Si substrate. On the other hand, for STO/PZT/STO/Si structure, the PZT film had perovskite phase and larger grain size with a little Pb interdiffusion. the interfaces of the PZT and the STO film, of the STO film and the interface layer and $SiO_2$, and of the $SiO_2$ and the Si substate had a good flatness. Across sectional TEM image showed the existence of an amorphous layer and $SiO_2$ with 7nm thickness between the STO film and the Si substrate. The electrical properties of MIFIS structure was characterized by C-V and I-V measurements. By 1MHz C-V characteristics Pt/STO(25nm)/PZT(160nm)/STO(25nm)/Si structure, memory window was about 1.2 V for and applied voltage of 5 V. Memory window increased by increasing the applied voltage and maximum voltage of memory window was 2 V for V applied. Memory window decreased by decreasing PZT film thickness to 110nm. Typical leakage current was abour $10{-8}$ A/cm for an applied voltage of 5 V.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2018.06a
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• pp.102-102
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• 2018

Electronic industry had required the finer size and the higher performance of the device. Therefore, 3-D die stacking technology such as TSV (through silicon via) and micro-bump had been used. Moreover, by the development of the 3-D die stacking technology, 3-D structure such as chip to chip (c2c) and chip to wafer (c2w) had become practicable. These technologies led to the appearance of HBM (high bandwidth memory). HBM was type of the memory, which is composed of several stacked layers of the memory chips. Each memory chips were connected by TSV and micro-bump. Thus, HBM had lower RC delay and higher performance of data processing than the conventional memory. Moreover, due to the development of the IT industry such as, AI (artificial intelligence), IOT (internet of things), and VR (virtual reality), the lower pitch size and the higher density were required to micro-electronics. Particularly, to obtain the fine pitch, some of the method such as copper pillar, nickel diffusion barrier, and tin-silver or tin-silver-copper based bump had been utillized. TCB (thermal compression bonding) and reflow process (thermal aging) were conventional method to bond between tin-silver or tin-silver-copper caps in the temperature range of 200 to 300 degrees. However, because of tin overflow which caused by higher operating temperature than melting point of Tin ($232^{\circ}C$), there would be the danger of bump bridge failure in fine-pitch bonding. Furthermore, regulating the phase of IMC (intermetallic compound) which was located between nickel diffusion barrier and bump, had a lot of problems. For example, an excess of kirkendall void which provides site of brittle fracture occurs at IMC layer after reflow process. The essential solution to reduce the difficulty of bump bonding process is copper to copper direct bonding below $300^{\circ}C$. In this study, in order to improve the problem of bump bonding process, copper to copper direct bonding was performed below $300^{\circ}C$. The driving force of bonding was the self-annealing properties of electrodeposited Cu with high defect density. The self-annealing property originated in high defect density and non-equilibrium grain boundaries at the triple junction. The electrodeposited Cu at high current density and low bath temperature was fabricated by electroplating on copper deposited silicon wafer. The copper-copper bonding experiments was conducted using thermal pressing machine. The condition of investigation such as thermal parameter and pressure parameter were varied to acquire proper bonded specimens. The bonded interface was characterized by SEM (scanning electron microscope) and OM (optical microscope). The density of grain boundary and defects were examined by TEM (transmission electron microscopy).

• Journal of Biomedical Engineering Research
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• v.19 no.3
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• pp.251-260
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• 1998

The Holter monitoring system is a widely used noninvasive diagnostic tool for ambulatory patient who may be at risk from latent life-threatening cardiac abnormalities. In this paper, we design a high performance intelligent holter monitoring system which is characterized by the small-sized and the low-power consumption. The system hardware consists of one-chip microcontroller(68HC11E9), ECG preprocessing circuit, and flash memory card. ECG preprocessing circuit is made of ECG preamplifier with gain of 250, 500 and 1000, the bandpass filter with bandwidth of 0.05-100Hz, the auto-balancing circuit and the saturation-calibrating circuit to eliminate baseline wandering, ECG signal sampled at 240 samples/sec is converted to the digital signal. We use a linear recursive filter and preprocessing algorithm to detect the ECG parameters which are QRS complex, and Q-R-T points, ST-level, HR, QT interval. The long-term acquired ECG signals and diagnostic parameters are compressed by the MFan(Modified Fan) and the delta modulation method. To easily interface with the PC based analyzer program which is operated in DOS and Windows, the compressed data, that are compatible to FFS(flash file system) format, are stored at the flash memory card with SBF(symmetric block format).