• Title/Summary/Keyword: melt growth process

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Preparation of YBa2Cu3O7-y Superconductor Using Melt Method (용융법에 의한 YBa2Cu3O7-y 초전도체 제작)

  • Lee, Sang Heon
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.35 no.6
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    • pp.622-625
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    • 2022
  • YBa2Cu3O7-y bulk as a high temperature oxide superconducting conductor has the high critical temperature of 92 K. YBa2Cu3O7-y bulk superconductors have been fabricated by a seeded melting growth. Magnetic properties were studied by using superconductor of melted YBa2Cu3O7-y oxides. It was demonstrated that Y2BaCuO5 particles acts as a pinning center which plays an important role on the magnetic properties. The thickness of the upper and lower pellets of the YBa2Cu3O7-y bulk was formed at 40 mm with 55 g of the composition, and the YBa2Cu3O7-y superconductor was manufactured through a heat treatment process. Manufacturing the superconducting bulk, it is possible to improve the pore density of the superconducting bulk by providing a path through which oxygen could be emitted.

Process design for solution growth of SiC single crystal based on multiphysics modeling (다중물리 유한요소해석에 의한 SiC 단결정의 용액성장 공정 설계)

  • Yoon, Ji-Young;Lee, Myung-Hyun;Seo, Won-Seon;Shul, Yong-Gun;Jeong, Seong-Min
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.26 no.1
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    • pp.8-13
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    • 2016
  • A top-seeded solution growth (TSSG) is a method of growing SiC single crystal from the Si melt dissolved the carbon. In this study, multiphysics modeling was conducted using COMSOL Multiphysics, a commercialized finite element analysis package, to get analytic results about electromagnetic analysis, heat transfer and fluid flow in the Si melt. Experimental results showed good agreements with simulation data, which supports the validity of the simulation model. Based on the understanding about solution growth of SiC and our set-up, crystal growth was conducted on off-axis 4H-SiC seed crystal in the temperature range of $1600{\sim}1800^{\circ}C$. The grown layer showed good crystal quality confirmed with optical microscopy and high resolution X-ray diffraction, which also demonstrates the effectiveness of the multiphysics model to find a process condition of solution growth of SiC single crystal.

GaAs OEIC Unit Processes for chip-to-chip Interconnection II (LD structure ; integration) (칩상호 광접속용 GaAs 광전집적회로의 기본 공정 II (LD 구조 ; 집적화 연구))

  • 김창남
    • Proceedings of the Optical Society of Korea Conference
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    • 1989.02a
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    • pp.185-192
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    • 1989
  • It is shown that GaAs/GaAs stripe Roof-Top-Reflector LD is better than cleaved mirror LD by numerical analysis. And surface light emitting device is developed by LPE melt-back growth, which is of good controllability for OEIC. OEIC transmitter using RTR LD structured device and FET has been made and modulated, expected to show good modulation characteristics after solving process problem. Beam-Lead LD mounted on Si carrier has been made and shows low heat-resistance and so long life and good characteristics of LD.

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YIG(Yttrium Iron Garnet) SingLe Crystal Growth by Floating Zone Method (Floating Zone법에 의한 YIG단결정 성장)

  • 신재혁;김범석;오근호
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.2 no.2
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    • pp.1-1
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    • 1992
  • YIG(Yttrium Iron Garnet) single crystals were grown by FZ(Floating Zone) method. Since YIG melts incongruently, TSFZ(Traveling Solvent Floating Zone) method which was modified FZ was applied to grow YIG single crystals. The optimum growth condition were growth rate Imm/hr, counter-rotation 30rpm and oxidized atmosphere was necessary to sintering and growth process. The quality of grown crystals depended on the degree of sintering. The voids were generated by the reaction of Fe ions with oxygen and the density of voids was increased with the growth rate increased. When the growth rate was more than 1.5mm/hr, the cellular growth occured and the density of dislocation was increased at the periphery of crystals. Also, secondary phases of orthoferrite(YFe$O_3$)compost ion were observed in the grown crystal.

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Study on th growth of nonlinear optical crystal $CsLiB_{6}O_{10}$ (비선형 광학 결정 $CsLiB_{6}O_{10}$ 육성에 관한 기초 연구)

  • 김호건;김명섭
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.6 no.2
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    • pp.166-176
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    • 1996
  • The fundamental conditions for growing $CsLiB_{6}O_{10}$ crystal, new nonlinear optical material, were investigated. Stoichiometirc mixture of $CsLiB_{6}O_{10}$ composition resulted in the crystal of the same composition in the process of heating at the temperature above $600^{\circ}C$. No phase transition was observed in the $CsLiB_{6}O_{10}$ crystal in the temperature range of $600^{\circ}C~800^{\circ}C$, and $CsLiB_{6}O_{10}$ crystal melted congruently at $850^{\circ}C$. When the melt of this composition was cooled at rates of $1~150^{\circ}C/hr$, glass state ingot was formed regardless of cooling rates. However, $CsLiB_{6}O_{10}$ crystals were formed directly from the melt at any cooling rate in the presence of $CsLiB_{6}O_{10}$ seed crystal in the melt. Transparent $CsLiB_{6}O_{10}$ single crystal was grown from the melt using the seed crystal at the growing rate of 0.06 mm/hr in the furnace having the temperature gradient of $100^{\circ}C/cm$. Analysis of the single crystal showed that the crystal belonged to the noncentrosymmetric tetragonal space group 142d and unit cell dimensions were $a=10.467(1)\;{\AA},\;c=8.972(1)\;{\AA}\;and\;V=983.0(2)\;{\AA}^3$. Optical absorption edge of the crystal was observed at 180mm and the crystal showed a good optical transparency (70% transmittance, sample thickness 0.5 mm) in the wide wavelength range above 300 nm.

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Single crystal growth of ZnWO4 by the Czochralski method and characterization (Czochralski법에 의한 ZnWO4 단결정 성장 및 특성분석)

  • Lim, Chang-Sung
    • Analytical Science and Technology
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    • v.23 no.2
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    • pp.103-108
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    • 2010
  • Single crystals of $ZnWO_4$ with [100], [010] and [001] directions were successfully grown by the Czochralski method. The seed crystals for the single crystal growth of $ZnWO_4$ could be induced by the crystal growth using platinum wires applied by the capillary action from the melt. The growth conditions in each direction were investigated in terms of the variations of rotation speed, pulling rate and diameter of the grown crystals. The formation of cracking in the grown crystals during the cooling process could be prevented by annealing effect. The growth directions of the grown crystals were determined using Laue back reflection. The microscopic characteristics of the grown crystals in each direction were discussed, and their physical properties were evaluated for hardness, thermal expansion coefficients and dielectric constants.

Optimization of the growth of $CaF_2$ crystals by model experiments and numerical simulation

  • Molchanov, A.;Graebner, O.;Wehrhan, G.;Friedrich, J.;Mueller, G.
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.13 no.1
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    • pp.15-18
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    • 2003
  • High purity single crystalline calcium fluoride ($CaF_2$) has excellent optical transmission characteristics down to deep UV and is therefore selected as the main optical material for the next generation of lithography apparatus operating at wavelength of 157 nm. The growth of large sized $CaF_2$ single crystals with the required properties for this optical application can be achieved only by optimizing the crystal growth process by the aid of numerical simulation. This needs especially a precise calculation of the heat transport and temperature distribution in the solid and liquid $CaF_2$ under crystal growth conditions. As $CaF_2$ is considered to be semitransparent, the internal radiative heat transfer in $CaF_2$ plays an decisive role in the simulation of the heat transport. On the other hand it is very difficult to obtain quantitative experimental data for evaluating numerical models as $CaF_2$ is extremely corrosive at high temperatures. In this work we present a newly developed experimental technique to perform temperature measurements in $CaF_2$-crystal as well as in the melt under conditions of crystal growth process. These experimental results are compared to calculated temperature data, which were obtained by using different numerical models concerning the internal heat transfer in semitransparent $CaF_2$. It will be shown, that an advanced model, which was developed by the authors, gives a much better agreement with experimental data as a standard model, which was taken from the literature.

Crystal Growth of $LiTaO_3$ and the Effect pf Crucible Type and Atmosphere ($LiTaO_3$ 단결정 성장과 용기 및 분위기의 영향)

  • 박승익;채승욱;김정돈;주기태;정수진
    • Journal of the Korean Ceramic Society
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    • v.31 no.1
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    • pp.39-46
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    • 1994
  • LiTaO3 single crystals were growth without cracking using Pt-Rh crucible and Ir crucible. The starting composition to get the melt of congruent melting composition, which has been dependent upon the experimental procedure, was taken after fixing the total growing process by the result of preliminary experiments. The Rh contamination from the Pt-Rh crucible was to be neglected if the crystal had been grown under inert atmosphere, which resulted in the crystal color being slightly yellow. This color was decolored after 24 hour's annealing at 1200℃ under air atmosphere. The optimum conditions for the crystal growing and the diameter control were so dependent upon the crucible material in spite of using the crucible of the same size. The liquid-solid interface of LiTaO3 crystal of 1" diameter has been flat if the rotation speed was 45rpm.

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