• 제목/요약/키워드: material removal process

검색결과 668건 처리시간 0.03초

신경회로망 및 반응표면분석법을 이용한 파우더 블라스팅시의 표면거칠기 및 재료제거량 예측 (Prediction of Material Removal and Surface Roughness in Powder Blasting using Neural Network and Response Surface Analysis)

  • 박동삼;유우식;김권흡;성은제;한진용
    • 한국기계가공학회지
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    • 제6권1호
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    • pp.34-42
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    • 2007
  • Powder blasting technique has been considered one of the most appropriate micro machining methods for hard and brittle materials, since the productivity is high and the heat layers caused by material removal are very thin. Recent development of special purposed parts, such as the parts for semiconductor processing, the parts for LCD, sensors for micro machine fabrication and so on, has been expanded. Thus, it is essential to develop powder blasting technologies for micromachining of hard and brittle materials such as glass, ceramics and so on. In this paper, the characteristics of powder blasted glass surface were tested under various blasting parameters. Finally, we proposed a predictive model for powder blasting process using the neural network and the response surface method. Detail analysis of the simulation results is carried out and the performance of two predictive models is compared.

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반경험적인 실험설계 기법을 이용한 CMP 공정 변수의 최적화 (Optimization of CMP Process Parameter using Semi-empirical DOE (Design of Experiment) Technique)

  • 이경진;김상용;서용진
    • 한국전기전자재료학회논문지
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    • 제15권11호
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    • pp.939-945
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    • 2002
  • The rise throughput and the stability in the device fabrication can be obtained by applying chemical mechanical polishing (CMP) process in 0.18 $\mu\textrm{m}$ semiconductor device. However, it still has various problems due to the CMP equipment. Especially, among the CMP components, process variables are very important parameters in determining the removal rate and non-uniformity. In this paper, we studied the DOE (design of experiment) method in order to get the optimized CMP equipment variables. Various process parameters, such as table and head speed, slurry flow rate and down force, have investigated in the viewpoint of removal rate and non-uniformity. Through the above DOE results, we could set-up the optimal CMP process parameters.

적응모델링과 유전알고리듬을 이용한 절삭공정의 최적화(II) - 절삭실험 - (Optimization of Machining Process Using an Adaptive Modeling and Genetic Algorithms(ll) - Cutting Experiment-)

  • 고태조;김희술;안병욱
    • 한국정밀공학회지
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    • 제13권11호
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    • pp.82-91
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    • 1996
  • In this study, we put our object to carry out adaptive modeling of cutting process in turning system, and to find out the optimal cutting conditions to maximize material removal rate under some constraints. We used a back-propagation neural network to model the cutting process adaptively and a genetic algorithm to find out optimal cutting conditions. The experimental results show that a back-propagation neural network could model the cutting process effciently, and optimized cutting conditions for maximizing the material removal rate were obtained through the adaptive process model and genetic algorithms. Therefore, the proposed approach can be applied to the real machining system.

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정밀여과·나노여과·역삼투 막에 의한 세슘과 요오드의 제거 (Removal of cesium(137Cs) and iodide(127I) by microfiltration·nanofiltration·reverese osmosis membranes)

  • 채선하;김충환
    • 상하수도학회지
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    • 제28권5호
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    • pp.549-554
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    • 2014
  • This study was evaluated the applicability of the membrane filtration process (Micro Filtration (MF), nanofiltration membranes (NF), reverse osmosis (RO)) on the major radioactive substances, iodine ($I^-$) and cesium ($Cs^+$) using membranes produced in Korea and domestic raw water. Iodine ($I^-$) or cesium ($Cs^+$) in the microfiltration membrane (MF) process could not be expected removal efficiency by eliminating marginally at the combined state with colloidal and turbidity material. At the domestic raw water (lake water, turbidity 1.2 NTU, DOC 1.3 mg/L) conditions, nanofiltration membrane (NF) and reverse osmosis (RO) showed a high removal rate of about 88 ~ 99% for iodine ($I^-$) and cesium ($Cs^+$) and likely to be an alternative process for the removal of radioactive material.

Sic/A1 복합재료의 방전가공 특성에 관한 연구 (A Study on the Characterisitcs of Electircal Discharge Machining)

  • 우정윤;왕덕현;김원일;이규창
    • 한국정밀공학회:학술대회논문집
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    • 한국정밀공학회 1996년도 춘계학술대회 논문집
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    • pp.3-7
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    • 1996
  • Metal Matrix Composite(MMC) material of 30% SiC particulate based on A1 matrix was machined by drilling and Electrical Discharge Machining (EDM) processes. When drilling process was executed, surface fracture due to brittle property near the bottom was found. It was also found the possiblity of difficult shape of EDM process for MMC material, but few the research about basic EDM characteristics. Material Removal Rate(MRR) was examined for different conditions and the surface morphology was evaluated by roughness values and Scanning Electron Microscopy(SEM) research. The higher the current is, the more MRR was obtained but the higher MRR was showed around 0.45 duty factor. The average roughness of EDMed surface was slightly changed with increased pulse current and increases with duty factor. The SEM photographs of EDMed surface showed recast region after melting.

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구리 ECMP에서 전류밀도가 재료제거에 미치는 영향 (Effect of Current Density on Material Removal in Cu ECMP)

  • 박은정;이현섭;정호빈;정해도
    • Tribology and Lubricants
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    • 제31권3호
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    • pp.79-85
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    • 2015
  • RC delay is a critical issue for achieving high performance of ULSI devices. In order to minimize the RC delay time, we uses the CMP process to introduce high-conductivity Cu and low-k materials on the damascene. The low-k materials are generally soft and fragile, resulting in structure collapse during the conventional high-pressure CMP process. One troubleshooting method is electrochemical mechanical polishing (ECMP) which has the advantages of high removal rate, and low polishing pressure, resulting in a well-polished surface because of high removal rate, low polishing pressure, and well-polished surface, due to the electrochemical acceleration of the copper dissolution. This study analyzes an electrochemical state (active, passive, transpassive state) on a potentiodynamic curve using a three-electrode cell consisting of a working electrode (WE), counter electrode (CE), and reference electrode (RE) in a potentiostat to verify an electrochemical removal mechanism. This study also tries to find optimum conditions for ECMP through experimentation. Furthermore, during the low-pressure ECMP process, we investigate the effect of current density on surface roughness and removal rate through anodic oxidation, dissolution, and reaction with a chelating agent. In addition, according to the Faraday’s law, as the current density increases, the amount of oxidized and dissolved copper increases. Finally, we confirm that the surface roughness improves with polishing time, and the current decreases in this process.

DOE 방법을 이용한 Cu CMP 공정 변수의 최적화 (Optimization of Cu CMP Process Parameter using DOE Method)

  • 최민호;김남훈;김상용;장의구
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2004년도 추계학술대회 논문집 Vol.17
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    • pp.711-714
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    • 2004
  • Chemical mechanical polishing (CMP) has been widely accepted for the global planarization of multi-layer structures in semiconductor manufacturing. However, it still has various problems to the CMP equipment, in particular, among the CMP components, process variables are very important parameters in determining the removal rate and non-uniformity. Using a design of experiment (DOE) approach, this study was performed investigating the interaction between the various parameters such as turntable and head speed, down force and back pressure during CMP. Using statistical analysis techniques, a better understanding of the interaction behavior between the various parameters and the effect on removal rate, no-uniformity and ETC (edge to center) is achieved.

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Post-Cu CMP cleaning에서 연마입자 제거에 buffing 공정이 미치는 영향 (The effect of buffing on particle removal in Post-Cu CMP cleaning)

  • 김영민;조한철;정해도
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2008년도 하계학술대회 논문집 Vol.9
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    • pp.537-537
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    • 2008
  • Copper (Cu) has been widely used for interconnection structure in intergrated circuits because of its properties such as a low resistance and high resistance to electromigration compared with aluminuim. Damascene processing for the interconnection structure utilizes 2-steps chemical mechanical polishing(CMP). After polishing, the removal of abrasive particles on the surfaces becomes as important as the polishing process. In the paper, buffing process for the removal of colloidal silica from polished Cu wafer was proposed and demonstrated.

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STI-CMP 공정을 위한 Pattern wafer와 Blanket wafer 사이의 특성 연구 (A study on Relationship between Pattern wafer and Blanket Wafer for STI-CMP)

  • 김상용;이경태;김남훈;서용진;김창일;이우선;장의구
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 1999년도 춘계학술대회 논문집
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    • pp.211-213
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    • 1999
  • In this paper, we documented the controlling oxide removal amount on the pattern wafer using removal rate and removal thickness of blanket wafer. There was the strong correlation relationship for both(correlation factor:0.7109). So, we could confirm the repeatability as applying for STI CMP process from the obtained linear formular. As the result of repeatability test, the difference of calculated polishing time and actual polishing time was 3.48 seconds based on total 50 lots. If this time is converted into the thickness, it is from 104$\AA$ to 167$\AA$. It is possible to be ignored because it is under the process margin.

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전기응집을 이용한 소규모 수도시설의 질산성질소와 불소이온 제거 (Fluoride and nitrate removal in small water treatment plants using electro-coagulation)

  • 한송희;장인성
    • 상하수도학회지
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    • 제25권5호
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    • pp.767-775
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    • 2011
  • In this study we verified if the electro-coagulation process can treat properly the nitrate and fluoride that are not removed well in the conventional small water treatment plants which usually employ chlorination and filtration only. As we gave a change of electrode material and gap-distance between electrodes, removal efficiency of the nitrate and fluoride was determined by electro-coagulation process which were equipped with aluminum and stainless steel (SUS304) electrodes. In addition, electrode durability was investigated by determination of electrodes mass change during the repetitive experiments. Removal efficiency was great when aluminum was used as an anode material. Nitrate removals increased as electric density and number of electrodes increased, but fluoride removal was less sensitive to both parameters than nitrate. After 10 minutes of contact time with the current density from $1{\times}10^{-3}$ to $3{\times}10^{-3}A/cm^{2}$, nitrate and fluoride concentration ranged from 9.2 to 1.2mg/L and from 0.02 to 0.01mg/L, which satisfied the regulation limits. Regardless of the repeating number of experiments, removal efficiency of both ions were almost similar and the change of electrode mass ranged within ${\pm}$0.5%, indicating that the loss of the electrode mass is not so much great under the limited circumstances.