Journal of the Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회논문지)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Optimization of CMP Process Parameter using Semi-empirical DOE (Design of Experiment) Technique

반경험적인 실험설계 기법을 이용한 CMP 공정 변수의 최적화

  • 이경진 (대불대학교 전기공학과) ;
  • 김상용 (아남반도체 FAB 사업부) ;
  • 서용진 (대불대학교 전기공학과)
  • Published : 2002.11.01
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Abstract

The rise throughput and the stability in the device fabrication can be obtained by applying chemical mechanical polishing (CMP) process in 0.18 $\mu\textrm{m}$ semiconductor device. However, it still has various problems due to the CMP equipment. Especially, among the CMP components, process variables are very important parameters in determining the removal rate and non-uniformity. In this paper, we studied the DOE (design of experiment) method in order to get the optimized CMP equipment variables. Various process parameters, such as table and head speed, slurry flow rate and down force, have investigated in the viewpoint of removal rate and non-uniformity. Through the above DOE results, we could set-up the optimal CMP process parameters.

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References

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