• Proceedings of the Materials Research Society of Korea Conference
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• 2003.11a
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• pp.136-136
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• 2003

In fiber optic networks, system size and cost can be significantly reduced by development of optical components through planar optical waveguides. One important step to realize the compact optical devices is to develop planar optical amplifier to compensate the losses in splitter or other components. Planar amplifier provides optical gain in devices less than tens of centimeters long, as opposed to fiber amplifiers with lengths of typically tens of meters. To achieve the same amount of gain between the planar and fiber optical amplifier, much higher Er doping levels responsible for the gain than in the fiber amplifier are required due to the reduced path length. These doping must be done without the loss of homogeniety to minimize Er ion-ion interactions which reduce gain by co-operative upconversion. Sol-gel process has become a feasible method to allow the incorporation of Er ion concentrations higher than conventional glass melting methods. In this work, Er-doped $SiO_2$-A1$_2$ $O_3$ films were prepared by two different method via sol -Eel process. Tetraethylorthosilicate(TEOS)/aluminum secondary butoxide [Al (OC$_4$ $H_{9}$)$_3$], methacryloxypropylcnethoxysaane(MPTS)/aluminum secondary butofde [Al(OC$_4$ $H_{9}$)$_3$] systems were used as starting materials for hosting Er ions. Er-doped $SiO_2$-A1$_2$ $O_3$ films obtahed after heat-treating, coatings on Si substrate were characterized by X-ray din action, FT-IR, and N-IR fluorescence spectroscopy. The luminescence properties for two different processing procedure will be compared and discussed from peak intensity and life time.

• Korean Journal of Materials Research
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• v.23 no.8
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• pp.430-434
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• 2013

Quantum dots(QDs) with their tunable luminescence properties are uniquely suited for use as lumophores in light emitting device. We investigate the microstructural effect on the electroluminescence(EL). Here we report the use of inorganic semiconductors as robust charge transport layers, and demonstrate devices with light emission. We chose mechanically smooth and compositionally amorphous films to prevent electrical shorts. We grew semiconducting oxide films with low free-carrier concentrations to minimize quenching of the QD EL. The hole transport layer(HTL) and electron transport layer(ETL) were chosen to have carrier concentrations and energy-band offsets similar to the QDs so that electron and hole injection into the QD layer was balanced. For the ETL and the HTL, we selected a 40-nm-thick $ZnSnO_x$ with a resistivity of $10{\Omega}{\cdot}cm$, which show bright and uniform emission at a 10 V applied bias. Light emitting uniformity was improved by reducing the rpm of QD spin coating.At a QD concentration of 15.0 mg/mL, we observed bright and uniform electroluminescence at a 12 V applied bias. The significant decrease in QD luminescence can be attributed to the non-uniform QD layers. This suggests that we should control the interface between QD layers and charge transport layers to improve the electroluminescence.

• Journal of Powder Materials
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• v.24 no.4
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• pp.321-325
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• 2017

In this study, we investigate the optical properties of InP/ZnS core/shell quantum dots (QDs) by controlling the synthesis temperature of InP. The size of InP determined by the empirical formula tends to increase with temperature: the size of InP synthesized at $140^{\circ}C$ and $220^{\circ}C$ is 2.46 nm and 4.52 nm, respectively. However, the photoluminescence (PL) spectrum of InP is not observed because of the formation of defects on the InP surface. The growth of InP is observed during the deposition of the shell (ZnS) on the synthesized InP, which is ended up with green-red PL spectrum. We can adjust the PL spectrum and absorption spectrum of InP/ZnS by simply adjusting the core temperature. Thus, we conclude that there exists an optimum shell thickness for the QDs according to the size.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.141-141
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• 2010

The effect of thermal anneal on the characteristics of structural properties and the enhancement of luminescence and photovoltaic (PV) characteristics of silicon-rich silicon-nitride films were investigated. By using an ultra high vacuum ion beam sputtering deposition, B-doped silicon-rich silicon-nitride (SRSN) thin films, with excess silicon content of 15 at. %, on P-doped (n-type) Si substrate was fabricated, sputtering a highly B doped Si wafer with a BN chip by N plasma. In order to examine the influence of thermal anneal, films were then annealed at different temperature up to $1100^{\circ}C$ under $N_2$ environment. Raman, X-ray diffraction, and X-ray photoemission spectroscopy did not show any reliable evidence of amorphous or crystalline Si clusters allowing us concluding that nearly no Si nano-cluster could be formed through the precipitation of excess Si from SRSN matrix during thermal anneal. Instead, results of Fourier transform infrared and X-ray photoemission spectroscopy clearly indicated that defective, amorphous Si-N matrix of films was changed to be well-ordered thanks to high temperature anneal. The measurement of spectral ellipsometry in UV-visible range was carried out and we found that the optical absorption edge of film was shifted to higher energy as the anneal temperature increased as the results of thermal anneal induced formation of $Si_3N_4$-like matrix. These are consistent with the observation that higher visible photoluminescence, which is likely due to the presence of Si-N bonds, from anneals at higher temperature. Based on these films, PV cells were fabricated by the formation of front/back metal electrodes. For all cells, typical I-V characteristic of p-n diode junction was observed. We also tried to measure PV properties using a solar-simulator and confirmed successful operation of PV devices. Carrier transport mechanism depending on anneal temperature and the implication of PV cells based on SRSN films were also discussed.

• Journal of the Korean Chemical Society
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• v.45 no.6
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• pp.577-588
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• 2001

Eu doped YRO$_4$ (R=As, Nb, P, V) red phosphors were prepared by the combinatorial chemistry method. The quaternary material library of tetrahedron-type composition array was designed to investigate the luminescence of the host material under UV and VUV excitations (254, 147 nm). The photoluminescent characteristics of the samples were comparable to the commercially available red phosphors such as (Y, Gd)BO$_3$: $Eu^{3+}$ and Y$_2$O$_3$: In view of the luminescence yield, V rich region was found to be optimum under UV excitation. But the results under VUV excitation were different from those of UV excitation, the samples of the composition containing a large amount of P shows the highest luminescence. Especially, higher luminescence was obtained in $Y_{0.9}$(A$S_{0.06}$N$B_{0.06}P_{0.83}V_{0.06}$) O$_4$: $Eu_{0.1}$ phosphors than commercial (Y, Gd)BO$_3$red phosphors under 147 nm excitation.

• Analytical Science and Technology
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• v.17 no.2
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• pp.163-172
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• 2004

The molecular size distribution and fluorescence properties of soil fulvic acids (FA) were characterized by using gel filtration chromatography (GFC) and luminescence spectroscopy. The objectives of this work were to fractionate the FA extracted from a forest soil into different nominal molecular size using GFC system and to characterize the fluorescence properties (excitation, emission and synchronous) of these fractions using luminescence spectrometer. The GFC column was calibrated with polyethylene glycols, acetone and dextrane Blue. The total permeation volume of the GFC system was 404 mL and the void volume 130 mL. The GFC molecular weight of the soil FA was in the range of 190~8,900 Dalton and the molecular weight at the peak on the chromatogram was 930 Dalton. The fluorescence intensity ratio ($I_{498nm}/I_{390nm}$) was found to be increased with an increasing molecular weight. This results may suggest that the fulvic acid fractions with high molecular weight have large amount of the condensed aromatic compound.

• Transactions on Electrical and Electronic Materials
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• v.15 no.1
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• pp.41-44
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• 2014

Emission properties of the organic light-emitting diodes were investigated with the use of a hole-injection layer of copper(II)-phthalocyanine (CuPc). The manufactured device structure is indium-tin-oxide (ITO) (180 nm)/CuPc (0~50 nm)/N,N'-Bis(3-methylphenyl)-N,N'-diphenylbenzidine (TPD) (40 nm)/tris-(8-hydroxyquinoline) aluminum (III) ($Alq_3$) (60 nm)/Al(100 nm). We investigated the luminescence properties of $Alq_3$ which is affected by the CuPc hole-injection layer. Also, we studied the influence of light-emission properties in the structure of an ITO/CuPc/TPD/$Alq_3$/Al device depending on the several thicknesses of CuPc (0~50 nm) layer. As a result, it was found that the hole injection occurs smoothly in the device with 20 nm thick CuPc layer, and the properties become significantly worse in the device with a CuPc layer thickness higher than 40 nm. We studied the topography and external quantum efficiency depending on the layer thickness of CuPc. Also, we analyzed the electroluminescent characteristics in the low and high-voltage range.

• Journal of Information Display
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• v.2 no.3
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• pp.13-17
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• 2001

The manganese-doped magnesium tin oxide with spinel structure was selected as a green phosphor for FED application and was synthesized by the solid state reaction. Its luminescence properties were investigated under low-voltage electron excitation. The $Mg_2SnO_4$:Mn phosphor showed green emission with the spectrum centered at 500 nm due to energy transfer from $^4T_1$ to $^6A_1$ of $Mn^{2+}$ ion. Optimum Mn concentration was 0.6 mole % and the decay time was shorter than 10 ms.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.48 no.10
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• pp.704-709
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• 1999

The optical properties such as luminance and color coordinates for phosphor layer were studied with applied voltage and gas pressure, Xe mixing ratio, frequency using He and Xe mixing gas in chamber like AC PDP. The luminance of red phosphor layer at constant pressure(300Toor) is increased with increasing voltage, but color purity is not varied. The luminance of red phosphor layer at constant voltage(280V)is decreased with increasing pressure, but the color purity is not varied. But the luminance is increased with increasing Xe mixing ratio at constant pressure(200Toor). And also the color purity is improved by this process. The luminance is increased up to 40kHz, but the color purity with frequency is not varied.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.14 no.6
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• pp.233-235
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• 2004

Shaped single crystals of Bi : $Y_3Ga_5O_{12}$(Bi = 0.041, 0.047 and 0.061 mol%) were grown by the micro-pulling-down method. Optical absorption spectra show an absorption band at 288 nm ascribed to the lowest energy $6s^2$ \longrightarrow 6s6p transition of $Bi^{3+}$ , while luminescence spectra demonstrate the band at 314 nm ascribed to the reverse radiative transition of the excited $Bi^{3+}$ centres. At room temperature, dominant decay time component was found to be about 440 ns with a minor slower component 580 ns.