• 대한전자공학회논문지SD
• /
• 제46권10호
• /
• pp.70-78
• /
• 2009

본 논문에서는 고속 저전압 차동 신호(Low-Voltage Differential Signaling, LVDS) 전송방식의 응용을 위한 전송선 분석 및 설계 최적화 방법을 제안한다. 차동 전송 경로 및 저전압 스윙 방법의 발전으로 인해 저전압 차동 신호 전송방식은 데이터 통신 분야, 고 해상도 디스플레이 분야, 평판 디스플레이 분야에서 매우 적은 소비전력, 개선된 잡음 특성 및 고속 데이터 전송률을 제공한다. 본 논문은 차동 유연성 인쇄 회로 보드(flexible printed circuit board, FPCB) 전송선에서 선 폭, 선 두께 및 선간격과 같은 전송선 설계 변수들의 최적화 기법을 이용하여 직렬 접속된 전송선에서 발생하는 임피던스 부정합과 신호 왜곡을 감소시키기 위해 개선 모델과 개발된 수식을 제안한다. 이러한 차동 FPCB 전송선의 고주파 특성을 평가하기 위해 주파수 영역에서 전파(full-wave) 전자기 시뮬레이션 및 시간 영역 시뮬레이션을 각각 수행하였다. 본 논문에서 제안하는 방법은 저전압 차동 신호 방식의 응용을 위한 고속 차동 FPCB 전송선을 최적화하는데 매우 도움이 되리라 믿는다.

• JSTS:Journal of Semiconductor Technology and Science
• /
• 제5권4호
• /
• pp.276-281
• /
• 2005

This paper presents a low voltage operating IF QPSK receiver block which is consisted of programmable gain amplifier (PGA) and analog to digital converter. This PGA has 6 bit control and 250MHz bandwidth, $0{\sim}20\;dB$ gain range. Using the proposed PGA architecture (low distortion gain control switch block), we can process the continuous fully differential $0.2{\sim}2.5Vpp$ input/output range and 44MHz carrier with 2 MHz bandwidth signal at 1.8V supply voltage. Using the sub-sampling technique (input freq. is $44{\sim}46MHz$, sampling freq. is 25MHz), we can process the IF QPSK signal ($44{\sim}46MHz$) which is the output of the 6 bit PGA. We can get the SNDR 35dB, which is the result of PGA and ADC at full gain mode. We fabricated the PGA and ADC and the digital signal processing block of the IF QPSK with the 0.18um CMOS MIM process 1.8V Supply.

• ETRI Journal
• /
• 제30권4호
• /
• pp.612-614
• /
• 2008

A novel linear switched termination active cross-coupled low-voltage differential signaling (LVDS) transceiver operating at 1.5 GHz clock frequency is presented. On the transmitter side, an active cross-coupled linear output driver and a switched termination scheme are applied to achieve high speed with low current. On the receiver side, a shared pre-amplifier scheme is employed to reduce power consumption. The proposed LVDS transceiver implemented in an 80 nm CMOS process is successfully demonstrated to provide a data rate of 6 Gbps/pin, an output data window of 147 ps peak-to-peak, and a data swing of 196 mV. The power consumption is measured to be 4.2 mW/pin at 1.2 V.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2000년도 하계학술대회 논문집
• /
• pp.324-327
• /
• 2000

In this paper, the effects of negative and positive bias stress on p-channel poly-Si TFT's fabricated by excimer laser annealing have been investigated After positive and negative bias stress, transcon-ductance(g$_{m}$) is increased because of a reduction of the effective channel length due to the injected electron in the gate oxide. In the positive bias stress, the injection of hole is appeared after stress time of 3600sec and g$_{m}$ is decreased. On the other hand, the gate voltage at the maximum g$_{m}$, S-swing and threshold voltage(V$_{th}$) are decreased because of the interface state generation due to the injection of electrons into the gate oxide.e.ide.e.

• 센서학회지
• /
• 제28권5호
• /
• pp.329-333
• /
• 2019

Solution-processed oxide thin-film transistors (TFTs) have garnered great attention, owing to their many advantages, such as low-cost, large area available for fabrication, mechanical flexibility, and optical transparency. Negative bias stress (NBS)-induced instability of sol-gel IGZO TFTs is one of the biggest concerns arising in practical applications. Thus, understanding the bias stress effect on the electrical properties of sol-gel IGZO TFTs and proposing an effective recovery method for negative bias stressed TFTs is required. In this study, we investigated the variation of transfer characteristics and the corresponding electrical parameters of sol-gel IGZO TFTs caused by NBS and positive bias recovery (PBR). Furthermore, we proposed an effective PBR method for the recovery of negative bias stressed sol-gel IGZO TFTs. The threshold voltage and field-effect mobility were affected by NBS and PBR, while current on/off ratio and sub-threshold swing were not significantly affected. The transfer characteristic of negative bias stressed IGZO TFTs increased in the positive direction after applying PBR with a negative drain voltage, compared to PBR with a positive drain voltage or a drain voltage of 0 V. These results are expected to contribute to the reduction of recovery time of negative bias stressed sol-gel IGZO TFTs.

• 한국산업정보학회논문지
• /
• 제18권5호
• /
• pp.25-32
• /
• 2013

고속 저전력 모바일 응용분야를 위한 1.8V 2-Gb/s scalable low voltage signaling (SLVS) 송신단을 제안한다. 제안하는 송신단은 데이터 전송을 위한 4-lane 송신단, 소스 동기 클록 방식을 위한 1-lane 송신단, 그리고 8-phase 클록 발생기로 구성된다. 제안하는 SLVS 송신단은 50 mV에서 650 mV의 출력 전압 범위를 가지며 고속 동작 모드와 저전력 모드를 제공한다. 또한, signal integrity를 개선하기 위한 출력 드라이버의 임피던스 교정 기법이 제안된다. 제안하는 SLVS 송신단은 1.8 V의 공급 전압을 가지는 0.18-${\mu}m$ 1-poly 6-metal CMOS 공정을 이용하여 구현된다. 구현된 SLVS 송신단의 데이터 jitter의 시뮬레이션 결과는 2-Gb/s의 데이터 전송속도에서 8.04 ps이다. 1-lane을 위한 SLVS 송신단의 면적과 전력소모는 각각 $422{\times}474{\mu}m^2$와 5.35 mW/Gb/s이다.

• 한국정보전자통신기술학회논문지
• /
• 제13권5호
• /
• pp.359-369
• /
• 2020

본 논문에서는 CMOS X-Ray 검출기의 메인 클럭을 발생시키는 위상 고정 루프(phase locked loop, PLL)을 위한 전류 불일치를 줄이면서도 넓은 동작 범위를 가지는 전하 펌프(charge pump, CP) 회로를 제안하였다. CP 회로의 동작 범위와 전류 불일치는 CP 회로를 구성하는 전류원 회로의 동작 범위와 출력 저항에 의해서 결정된다. 제안된 CP 회로는 넓은 동작 범위를 확보하기 위한 wide operating 전류 복사 바이어스 회로와 전류 불일치를 줄이기 위한 출력 저항이 큰 캐스코드 구조의 전류원으로 구현하였다. 제안된 wide operating range 캐스코드 CP 회로는 350nm CMOS 공정을 이용하여 칩으로 제작되었으며 소스 측정 장치(source measurement unit)을 활용하여 전류 일치 특성을 측정하였다. 이때 전원 전압은 3.3V이고 CP 회로의 전류 ICP=100㎂이었다. 제안된 CP 회로의 동작 범위 △VO_Swing=2.7V이고 이때 최대 전류 불일치는 5.15%이고 최대 전류 편차는 2.64%로 측정되었다. 제안된 CP 회로는 낮은 전류 불일치 특성을 가지면서 광대역 주파수 범위에 대응할 수 있으므로 다양한 클럭 속도가 필요한 시스템에 적용할 수 있다.

• 전자공학회논문지C
• /
• 제35C권4호
• /
• pp.50-59
• /
• 1998

This paper describes a 3.3V 8bit CMOS digital to analog converter (DAC) with two state current cell metrix architecture which consists of a 4 MSB and a 4 LSB current matrix stage. The symmetric two stage current cell matrix architecture allow the designed DAC to reduce hot only a complexity of decoding logics, but also a number of wider swing cascode curent mirros. The designed DAC with an active chip area of 0.8 mm$_{2}$ is fabricated by a 0.8 .mu.m CMOS n-well standard digital process. The experimental data shows that the rise/fall time, the settling time, and INL/DNL are6ns, 15ns, and a less than .+-.0.8/.+-.0.75 LB, respectively. The designed DAC is fully operational for the power supply down to 2.0V, such that the DAC is suitable for a low voltage and a low power system application. The power dissipation of the DAC with a single power supply of 3.3V is measured to be 34.5mW.

• 한국전기전자재료학회논문지
• /
• 제11권6호
• /
• pp.428-435
• /
• 1998

SOI-like-bulk CMOS device is proposed, which having the advantages of SOI(Silicon On Insulator) and protects short channel effects efficiently with adding partial epitaxial process at standard CMOS process. SOI-like-bulk NMOS and PMOS with 0.25${\mu}{\textrm}{m}$ gate length have designed and optimized through analyzing the characteristics of these devices and applying again to the design of processes. The threshold voltages of the designed NMOS and PMOS are 0.3[V], -0.35[V] respectively and those have shown the stable characteristics under 1.5[V] gate and drain voltages. The leakage current of typical bulk-CMOS increase with shortening the channel length, but the proposed structures on this a study reduce the leakage current and improve the subthreshold characteristics at the same time. In addition, subthreshold swing value, S is 70.91[mV/decade] in SOI-like-bulk NMOS and 63.37[mV/ decade] SOI-like-bulk PMOS. And the characteristics of SOI-like-bulk CMOS are better than those of standard bulk CMOS. To validate the circuit application, CMOS inverter circuit has designed and transient & DC transfer characteristics are analyzed with mixed mode simulation.

• 한국전기전자재료학회논문지
• /
• 제26권8호
• /
• pp.575-581
• /
• 2013

The self-cascode (SC) structure has low output voltage swing and high output resistance. In order to implement a simple and better SC structure, the native-$V_{th}$ MOSFETs which has low threshold voltage($V_{th}$) is applied. The proposed SC structure is designed using a qualified industry standard $0.18-{\mu}m$ CMOS technology. Measurement results show that the proposed SC structure has higher transconductance as well as output resistance than single MOSFET. In addition, analog building blocks (e.g. current mirror, basic amplifier circuits) with the proposed SC structure are investigated using by Cadence Spectre simulator. Simulation results show improved electrical performances.