• Title/Summary/Keyword: low-temperature-active

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Mechanisms of $Cl_2$ Molecules Dissociation in a Gas Discharge Plasma in Mixtures with Ar, $O_2.N_2$

  • Efremov, A.M.;Kwon, Kwang-Ho
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.1 no.4
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    • pp.197-201
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    • 2001
  • The influence of argon, oxygen, and nitrogen admixtures on the dissociation of $Cl_2$ molecules in a glow discharge low-temperature plasma under the constant pressure conditions was investigated. For $Cl_2/Ar$ and $Cl_2/O_2$mixtures, the concentration of chlorine atoms was observed to be a practically constant at argon or oxygen concentrations up to 50%. This invariability is a most pro bably explained by relative increase in rate of $Cl_2$ direct electron impact dissociation due to the changes in electrophysical parameters of plasma such as EEDF, electron drift rate and mean energy. For all the considered mixtures, the contribution of stepwise dissociation involving active species from gas additives (metastable atoms and molecules, vibrationally excited molecules) was found to be negligible.

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SUNSPOTS AND THEIR ASSOCIATED SOLAR ACTIVITIES I. PHYSICAL CHARACTERISTICS OF A WHITE LIGHT FLARE

  • LEE SANG-WOO;YUN HONG SIK
    • Journal of The Korean Astronomical Society
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    • v.28 no.1
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    • pp.77-87
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    • 1995
  • An attempt has been made to analyze time series of $H_\alpha,\;H_\beta,\;and\; H_\gamma$ line profiles taken from a 3B/X6.1 flare which occurred on Oct. 27, 1991 in an active region, NOAA 6891. A total of 22 sets of $H_\alpha,\;H_\beta,\;and\; H_\gamma$ taken with a low and non-uniform time resolution of 10-40 seconds were scanned by PDS with absolute intensity calibration to derive the physical characteristics of the material in the flare chromosphere. Our . results are as follows: (1) The lower Balmer lines observed during the flare activity are broadened by Stark effect. (2) At the peak of the flare activity, the electron temperature of the Balmer line emitting region reaches up to 35000K and its geometrical thickness increases to a scale of $10^4km$, suggesting that high energy particles penetrate deep into the photospheric level.

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Effect of Polar Amino Acid Residue Substitution by Site-Directed Mutagenesis in the N-terminal Domain of Pseudomonas sp. Phytase on Enzyme Activity

  • Lee, Ga Hye;Jang, Won Je;Kim, Soyeong;Kim, Yoonha;Kong, In-Soo
    • Journal of Microbiology and Biotechnology
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    • v.30 no.7
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    • pp.1104-1107
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    • 2020
  • The N-terminal domain of the Pseudomonas sp. FB15 phytase increases low-temperature activity and catalytic efficiency. In this study, the 3D structure of the N-terminal domain was predicted and substitutions for the amino acid residues of the region assumed to be the active site were made. The activity of mutants, in which alanine (A) was substituted for the original residue, was investigated at various temperatures and pH values. Significant differences in enzymatic activity were observed only in mutant E263A, suggesting that the amino acid residue at position 263 of the N-terminal domain is important in enzyme activity.

Resonance Device Design of Bidirectional DC-DC Converter for Active Power Decoupling of Photovoltaic AC Module (태양광 AC 모듈의 능동 디커플링을 위한 양방향 DC-DC 컨버터의 공진 소자 설계)

  • Kim, Mi-Na;Noh, Yong-Su;Kim, Jun-Gu;Lee, Tae-Won;Jung, Yong-Chae;Won, Chung-Yuen
    • Proceedings of the KIPE Conference
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    • 2012.11a
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    • pp.103-104
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    • 2012
  • In the AC module system, mismatch problem between AC power and constant input power is occurred. To solve this problem, electrolytic capacitor is utilized for diminishing power pulsation in PV side. However, it has disadvantages of low life span and weak in temperature. Decoupling method has been studied to reduce the capacitance and replaces electrolytic capacitor to film capacitor. This paper proposes design method for decoupling circuit which bidirectional DC-DC converter using soft switching. Proposed system is verified by design optimization and simulation results.

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Threshold Voltage Instability in a-Si:H TFTs and the Implications for Flexible Displays and Circuits

  • Allee, D.R.;Venugopal, S.M.;Shringarpure, R.;Kaftanoglu, K.;Uppili, S.G.;Clark, L.T.;Vogt, B.;Bawolek, E.J.
    • 한국정보디스플레이학회:학술대회논문집
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    • 2008.10a
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    • pp.1297-1300
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    • 2008
  • Electrical stress degradation of low temperature, amorphous silicon thin film transistors is reviewed, and the implications for various types of flexible circuitry including active matrix backplanes, integrated drivers and general purpose digital circuitry are examined. A circuit modeling tool that enables the prediction of complex circuit degradation is presented.

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Source-Follower Type Analog Buffer Using Low Temperature Poly-Si TFTs for AMLCDs

  • Chen, Bo-Ting;Tai, Ya-Hsiang;Wei, Ying-Jyun;Tsai, Chun-Chien;Chen, Hsu-Hsin;Huang, Chun-Yao;Kuo, Yu-Ju;Cheng, Huang-Chung
    • 한국정보디스플레이학회:학술대회논문집
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    • 2006.08a
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    • pp.1243-1246
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    • 2006
  • A new source follower circuit for the integrated circuit of AMLCDs is proposed. Active load is added and calibration operation is applied to compensate the circuits. Proposed circuit is capable of minimizing the variation from both timing and device variations through measured results, the uniformity and bias effect are discussed.

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Thin Film Transistor (TFT) Pixel Design for AMOLED

  • Han, Min-Koo;Lee, Jae-Hoon;Nam, Woo-Jin
    • 한국정보디스플레이학회:학술대회논문집
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    • 2006.08a
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    • pp.413-418
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    • 2006
  • Highly stable thin-film transistor (TFT) pixel employing both low temperature polycrystalline silicon (LTPS) and amorphous silicon (a-Si) for active matrix organic light emitting diode (AMOLED) is discussed. ELA (excimer laser annealing) LTPS-TFT pixel should compensate $I_{OLED}$ variation caused by the non-uniformity of LTPS-TFT due to the fluctuation of excimer laser energy and amorphous silicon TFT pixel is desired to suppress the decrease of $I_{OLED}$ induced by the degradation of a-Si TFT. We discuss various compensation schemes of both LTPS and a-Si TFT employing the voltage and the current programming.

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Enhanced LTPS Manufacturing Equipment employing Excimer Laser Crystallization

  • Herbst, Ludolf;Simon, Frank;Rebhan, Ulrich;Geuking, Thorsten;Klaft, Ingo;Fechner, Burkhard
    • 한국정보디스플레이학회:학술대회논문집
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    • 2005.07b
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    • pp.1123-1126
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    • 2005
  • For creation of low temperature polycrystallinesilicon (LTPS) the line beam excimer laser annealing (ELA) is a well known and established technique in mass production. With introduction of Sequential Lateral Solidification (SLS) some aspects such as crystalline quality, throughput and flexibility regarding the substrate size could be improved, but for OLED manufacturing still further process development is necessary. This paper discusses line beam ELA and SLS techniques that might enable process engineers to make polycrystalline-silicon (poly-Si) films with a high degree of uniformity and quality as required for system on glass (SOG) and active matrix organic light emitting displays (AMOLED). Equipment requirements are discussed and compared to previous standards. SEM images of process examples are shown in order to demonstrate the viability.

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A Study on the Negative Resistance and Oscillation Phenomena of OPP Film (OPP 필름의 부성저항과 발진현상에 관한 연구)

  • Kim, Gwi-Yeol;Yun, Mun-Soo;Hong, Jin-Ung;Lee, Joon-Ung
    • Proceedings of the KIEE Conference
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    • 1989.07a
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    • pp.364-366
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    • 1989
  • In this paper, the electrical conduction phenomena of oriented polypropylene film were studied. Especially, as for the range of negative characteristics, it is observed that as increasing ambient temperature, the characteristics are shifted gradually towards the low intensity side of applied field with the decreasing width of the range as well as the fact that the currant oscillation takes place at the both transition points of the characteristics and that the point at the place the dielectric breakdown, occurs. Finally, it is also suggestive that the oscillation characteristics observed on the negative resistance range of the biaxially oriented specimen show the possibility to utilize it as active element materials.

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Negative Resistance Characteristics and Oscillation Phenomena of Oriented Polypropylene Film (OOP 필름의 부성저항 특성과 발진 현상)

  • 김귀열;이준웅
    • The Transactions of the Korean Institute of Electrical Engineers
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    • v.41 no.4
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    • pp.385-391
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    • 1992
  • In this paper, the electrical conduction phenomena of oriented polypropylene film were studied. Especially, as for the range of negative characteristics, it is observed that as increasing ambient temperature, the characteristics are shifted gradually towards the low intensity side of applied field with the decreasing width of the range as well as the fact that the current oscillation takes place at the both transition points of the characteristics. Finally, it is also suggestive that the oscillation characteristics observed on the negative resistance range of the biaxially oriented specimen show the possibility to utilize it as active element materials.

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