• 한국입자에어로졸학회지
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• 제4권2호
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• pp.51-67
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• 2008

In this study, we devoted to kinetic measurement of the catalytic oxidation of iron-containing flame soot particles and better understanding the role of catalytic particles on carbon oxidation in particular at low temperature, targeting on autothermal regeneration of diesel particulate filter by diesel exhaust gas. Carbon-based Fe-containing particles generated by spraying ferrocene-doped diesel fuel in an oxy-hydrogen flame are tested and compared with a commercial carbon black powder for thermogravimetric analysis (TGA), secondary ion mass spectrometry (SIMS), Fourier-transform infrared spectroscopy (FTIR), Induced coupled plasma-Atomic emission spectroscopy (ICP-AES), and High-resolution transmission electron microscopy (HR-TEM). As a result, we found that a small amount of the ferrocene addition led to significant reductions in a on-set temperature and an activation energy of the carbon oxidation as well. An oxygenated surface complex forming at the particle surface could be thought as active species that would be readily consumed in particular at low temperature.

• 열처리공학회지
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• 제31권5호
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• pp.237-243
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• 2018

In-rich InGaN epilayers were grown on (0001) sapphire substrates by radio-frequency plasma-assisted molecular beam epitaxy (RF-MBE). InGaN epilayers grown at various growth condition were observed by SEM, XRD, and RHEED. When plasma power of nitrogen increased from 290 to 350 W, surface morphology and crystal quality became worse according to more active nitrogen on the surface of InGaN at N-rich growth condition. As In composition was reduced from 89 to 71% by changing the incoming flux of In and Ga, surface morphology and crystal quality became worse. In addition, weak peaks of cubic InGaN phase was observed from InGaN layer with 71% In composition by XRD ${\Phi}$ scan measurement. When growth temperature decreased from 500 to $400^{\circ}C$, RHEED diffraction pattern was changed to be from streaky to spotty which means atomically rough surface, and spotty pattern showed cubic symmetry of InGaN clearly. XRD ${\Phi}$ scan measurement gave clear evidence that more cubic InGaN phase was formed at low growth temperature. All these results indicates that extremely low surface mobility of Ga adatom caused inferior crystal quality and cubic InGaN phase.

• 한국분말재료학회지
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• 제29권5호
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• pp.357-362
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• 2022

The low-temperature sinterability of TiO₂-CuO systems was investigated using a solid solution of SnO₂. Sample powders were prepared through conventional ball milling of mixed raw powders. With the SnO₂ content, the compositions of the samples were Ti_1-xSn_xO₂-CuO(2 wt.%) in the range of x ≤ 0.08. Compared with the samples without SnO₂ addition, the densification was enhanced when the samples were sintered at 900℃. The dominant mass transport mechanism seemed to be grain-boundary diffusion during heat treatment at 900℃, where active grain-boundary diffusion was responsible for the improved densification. The rapid grain growth featured by activated sintering was also obstructed with the addition of SnO₂. This suggested that both CuO as an activator and SnO₂ dopant synergistically reduced the sintering temperature of TiO₂.

• 한국전기전자재료학회논문지
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• 제22권10호
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• pp.821-825
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• 2009

Recently, transparent ZnO-based TFTs have attracted much attention for flexible displays because they can be fabricated on plastic substrates at low temperature. We report the fabrication and characteristics of ZnO TFTs having different channel thicknesses deposited at low temperature. The ZnO films were deposited as active channel layer on $Si_3N_4/Ti/SiO_2/p-Si$ substrates by RF magnetron sputtering at $100^{\circ}C$ without additional annealing. Also, the ZnO thin films deposited at oxygen partial pressures of 40%. ZnO TFTs using a bottom-gate configuration were investigated. The $Si_3N_4$ film was deposited as gate insulator by PE-CVD at $150^{\circ}C$. All Processes were processed below $150^{\circ}C$ which is optimal temperature for flexible display and were used dry etching method. The fabricated devices have different threshold slop, field effect mobility and subthreshold slop according to channel thickness. This characteristics are related with ZnO crystal properties analyzed with XRD and SPM. Electrical characteristics of 60 nm ZnO TFT (W/L = $20\;{\mu}m/20\;{\mu}m$) exhibited a field-effect mobility of $0.26\;cm^2/Vs$, a threshold voltage of 8.3 V, a subthreshold slop of 2.2 V/decade, and a $I_{ON/OFF}$ ratio of $7.5\times10^2$.

• 대한통합의학회지
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• 제9권3호
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• pp.185-192
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• 2021

Purpose : Our study aimed to compare the effectiveness of low-level laser therapy (LLLT) and light-emitting diode therapy (LEDT) for chronic pain intensity reduction and body temperature increase in older adults with chronic pain. Methods : Overall, 144 of 332 participants' records were used in this retrospective chart review. The study was conducted at a private health center in Busan city and the integrative medical center of a tertiary care hospital in Daegu city, South Korea. Patients experiencing chronic pain for over 6 months were assigned to either the LLLT or LEDT group. Both groups underwent 16 sessions of phototherapy held twice a week for 8 weeks, with each session lasting 60 minutes. The primary outcomes for both groups were the mean visual analogue scale (VAS) scores and body temperatures in both groups. The secondary outcome was the correlation between changes in body temperature and pain intensity. Measurements were recorded at the baseline and at each follow-up session. Results : A decrease in pain intensity and an increase in body temperature (p<.001) were observed in both groups. There was a significant difference in the VAS scores and temperature changes between the groups (p<.001). Odditionally, there were significant differences in the patterns of change in the VAS score and body temperature between the groups as the sessions progressed (p<.01), and a strong inverse correlation between body temperature and pain intensity changes were observed (p<.01). Conclusion : The use of photobiomodulation therapy at a specific wavelength may improve pain severity and simultaneously increase the body temperature among elderly people with chronic pain.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2006년도 6th International Meeting on Information Display
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• pp.495-498
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• 2006

The influence of various process parameters for the as-deposited poly silicon was investigated. The polycrystalline silicon films were successfully deposited on glass substrates at a low-temperature $(<200^{\circ}C)$ using the catalytic chemical vapor deposition (Cat-CVD). We achieved a low hydrogen content $({\sim}0.9%)$ and a high deposition rate $({\sim}35{\AA}/sec)$. The film is applicable to thin film transistors on plastic substrates.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 하계학술대회 논문집
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• pp.190-193
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• 2002

The processing technology of organic thin-film transistors (Ons) performances have improved fur the last decade. Gate insulator layer has generally used inorganic layer, such as silicon oxide which has properties of a low electrical conductivity and a high breakdown field. However, inorganic insulating layers, which are formed at high temperature, may affect other layers termed on a substrate through preceding processes. On the other hand, organic insulating layers, which are formed at low temperature, dose not affect pre-process. Known wet-processing methods for fabricating organic insulating layers include a spin coating, dipping and Langmuir-Blodgett film processes. In this paper, we propose the new dry-processing method of organic gate dielectric film in field-effect transistors. Vapor deposition polymerization (VDP) that is mainly used to the conducting polymers is introduced to form the gate dielectric. This method is appropriate to mass production in various end-user applications, for example, flat panel displays, because it has the advantages of shadow mask patterning and in-situ dry process with flexible low-cost large area displays. Also we fabricated four by four active pixels with all-organic thin-film transistors and phosphorescent organic light emitting devices.

• International Journal of Automotive Technology
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• 제8권1호
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• pp.27-31
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• 2007

The number of vehicles employing diesel engines is rapidly rising. Accompanying this trend, application of an after-treatment system is strictly required as a result of reinforced exhaust regulations. The Diesel Particulate Filter (DPF) system is considered as the most efficient method to reduce particulate matter (PM), but the improvement of a regeneration performance at any engine operation point presents a considerable challenge by itself. Therefore, the present study evaluates the effect of fuel injection characteristics on regeneration performance in a DOC and a catalyzed CR-DPF system. The temperature distribution on the rear surface of the DOC and the exhaust gas emission were analyzed in accordance with fuel injection strategies and engine operating conditions. A temperature increase more than BPT of DPF system was obtained with a small amount fuel injection although the exhaust gas temperature was low and flow rate was high. This increase of temperature at the DPF inlet cause PM to oxidize completely by oxygen. In the case of multi-step injection, the abrupt temperature changes of DOC inlet didn't occur and THC slip also could not be observed. However, in the case of pulse type injection, the abrupt injection of much fuel results in the decrease of DOC inlet temperatures and the instantaneous slip of THC was observed.

• 공업화학
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• 제31권2호
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• pp.200-207
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• 2020

본 연구에서는, NH₃-SCO (selective catalytic oxidation) 반응에서 RuTi 촉매 제조 시 소성온도에 따른 영향을 확인하였다. RuTi 촉매는 습윤 함침법을 이용하여 제조되었고, 공기 분위기에서 400~600 ℃로 4 h 동안 소성되었다. 촉매는 RuTi x00로 표기되었으며, x00는 소성온도를 의미한다. XRD, TEM, H₂-TPR 분석에 따르면, RuTi x00 촉매는 소성온도가 증가할수록 활성금속의 분산도가 감소하는 것을 나타내었다. XPS, NH₃-TPD 분석을 통하여, 낮은 분산도를 갖는 촉매는 표면 흡착 산소 종(O_β) 및 NH₃ 흡착량이 감소하는 특성을 나타내었다. 따라서 RuTi 400 촉매는 TiO₂ 표면에 활성금속이 가장 잘 분산되었으며, NH₃ 제거 효율이 가장 우수하였다.

• ETRI Journal
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• 제24권4호
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• pp.290-298
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• 2002

We present, for the first time, a prototype active-matrix field emission display (AMFED) in which an amorphous silicon thin-film transistor (a-Si TFT) and a molybdenum-tip field emitter array (Mo-tip FEA) were monolithically integrated on a glass substrate for a novel active-matrix cathode (AMC) plate. The fabricated AMFED showed good display images with a low-voltage scan and data signals irrespective of a high voltage for field emissions. We introduced a light shield layer of metal into our AMC to reduce the photo leakage and back channel currents of the a-Si TFT. We designed the light shield to act as a focusing grid to focus emitted electron beams from the AMC onto the corresponding anode pixel. The thin film depositions in the a-Si TFTs were performed at a high temperature of above 360°C to guarantee the vacuum packaging of the AMC and anode plates. We also developed a novel wet etching process for $n^+-doped$ a-Si etching with high etch selectivity to intrinsic a-Si and used it in the fabrication of an inverted stagger TFT with a very thin active layer. The developed a-Si TFTs performed well enough to be used as control devices for AMCs. The gate bias of the a-Si TFTs well controlled the field emission currents of the AMC plates. The AMFED with these AMC plates showed low-voltage matrix addressing, good stability and reliability of field emission, and good light emissions from the anode plate with phosphors.