• Bulletin of the Korean Chemical Society
• /
• v.22 no.8
• /
• pp.921-924
• /
• 2001

• Transactions on Electrical and Electronic Materials
• /
• v.13 no.2
• /
• pp.106-109
• /
• 2012

A low power methane gas sensor with microheater was fabricated by silicon bulk micromachining technology. In order to heat up the sensing layer to operating temperature, a platinum (Pt) micro heater was embedded in the gas sensor. The line width and gap of the microheater was 20 ${\mu}m$ and 4.5 ${\mu}m$, respectively. Zinc oxide (ZnO) nanowhisker arrays were grown on a sensor from a ZnO seed layer using a hydrothermal method. A 200 ml aqueous solution of 0.1 mol zinc nitrate hexahydrate, 0.1 mol hexamethylenetetramine, and 0.02 mol polyethylenimine was used for growing ZnO nanowhiskers. Temperature distribution of the sensor was analyzed by infrared thermal camera. The optimum temperature for highest sensitivity was found to be $250^{\circ}C$ although relatively high (64%) sensitivity was obtained even at as low a temperature as $150^{\circ}C$. The power consumption was 72 mW at $250^{\circ}C$, and only 25 mW at $150^{\circ}C$.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2016.02a
• /
• pp.290.2-290.2
• /
• 2016

Recently, organic thin-film transistors have been widely researched for organic light-emitting diode panels, memory devices, logic circuits for flexible display because of its virtue of mechanical flexibility, low fabrication cost, low process temperature, and large area production. In order to achieve high performance OTFTs, increase in accumulation carrier mobility is a critical factor. Post-fabrication thermal annealing process has been known as one of the methods to achieve this by improving the crystal quality of organic semiconductor materials In this paper, we researched the properties of pentacene films with X-Ray Diffraction (XRD) and Atomic Force Microscope (AFM) analyses as different annealing temperature in N2 ambient. Electrical characterization of the pentacene based thin film transistor was also conducted by transfer length method (TLM) with different annealing temperature in Al- and Ti-pentacene junctions to confirm the Fermi level pinning phenomenon. For Al- and Ti-pentacene junctions, is was found that as the surface quality of the pentacene films changed as annealing temperature increased, the hole-barrier height (h-BH) that were controlled by Fermi level pinning were effectively reduced.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2002.07b
• /
• pp.731-734
• /
• 2002

This paper describes on the fabrication and characteristics of a ceramic thin-film pressure sensor based on Ta-N strain gauges for harsh environment applications. The Ta-N thin-film strain gauges are sputter deposited onto a micromachined Si diaphragms with buried cavity for overpressure protectors. The proposed device takes advantages of the good mechanical properties of single crystalline Si as diaphragms fabricated by SDB and electrochemical etch-stop technology, and in order to extend the operating temperature range, it incorporates relatively the high resistance, stability and gauge factor of Ta-N thin-films. The fabricated pressure sensor presents a low temperature coefficient of resistance, high sensitivity, low non-linearity and excellent temperature stability. The sensitivity is $1.097{\sim}1.21mV/V{\cdot}kgf/cm^2$ in the temperature range of $25{\sim}200^{\circ}C$ and the maximum non-linearity is 0.43 %FS.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2014.02a
• /
• pp.469.2-469.2
• /
• 2014

All-solid-state solar cell based on Chloride doped organometallic halide perovskite, (CH3NH3)PbIxCl3-x, has achieved a highly power conversion efficiency (PCE) to over 15% [1] and further improvements are expected up to 20% [2]. In this way, solar cells using novel light absorbing perovskite material are actively being studied as a next generation solar cells. However, making solution-process require high temperature up to $500^{\circ}C$ to form compact hole blocking layer and sinter the mesoporous oxide scaffold layer. Because of this high temperature process, fabrication of flexible solar cells on plastic substrate is still troubleshooting. In this study, we fabricated highly efficient flexible perovskite solar cells with PCE in excess of 11%. Atomic layer deposition (ALD) is used to deposit dense $TiO_2$ as hole blocking layer on ITO/PEN substrate. The all fabrication process is done at low temperature below $150^{\circ}C$. This work shows that one of the important blueprint for commercial use of perovskite solar cells.

• JSTS:Journal of Semiconductor Technology and Science
• /
• v.2 no.4
• /
• pp.288-294
• /
• 2002

This paper presents the design, fabrication and characterization of a 32 by 32 electroplated micromirror array on a glass, a low cost substrate. Approaches taken in this work for the fabrication of micromachined mirror arrays include a line addressing scheme, a seamless array design for high fill factor, planarization techniques of polymeric interlayers, a high yield methodology for the removal of sacrificial polymeric interlayers, and low temperature and chemically safe fabrication techniques. The micromirror is fabricated by aluminum and the size of a single micromirror is 200 $\mu\textrm{m}{\;}{\times}200{\;}\mu\textrm{m}$. Static deflection test of the micro-mirror has been carried out and pull-in voltage of 44V and releasing voltage of 30V was found.

• Proceedings of the Materials Research Society of Korea Conference
• /
• 2010.05a
• /
• pp.27.2-27.2
• /
• 2010

In recent years, there is a strong requirement of low cost, stable microelectro mechanical systems (MEMS) for resonators, microswitches and sensors. Most of these devices consist of freely suspended microcantilevers, which are usually made by the etching of some sacrificial materials. Herein, we have attempted to use Si nanowires, inherited from the parent Si wafer, as a sacrificial material due to its porosity, low cost and ease of fabrication. Prior to the fabrication of the Si nanowires silver nanoparticles were continuously formed on the surface of Si wafer. Vertically aligned Si nanowires were fabricated from the parent Si wafers by aqueous chemical route at $50^{\circ}C$. Afterwards, the morphological and structural characteristics of the Si nanowires were investigated. The morphology of nanowires was strongly modulated by the resistivity of the parent wafer. The 3-step etching of nanowires in diluted KOH solution was carried out at room temperature in order to control the fast etching. A layer of $Si_3N_4$ (300 nm) was used for the selective fabrication of nanowires. Finally, a freely suspended bridge of zinc oxide (ZnO) was fabricated after the removal of nanowires from the parent wafer. At present, we believe that this technique may provide a platform for the inexpensive fabrication of futuristic MEMS.

• 한국정보디스플레이학회:학술대회논문집
• /
• 2003.07a
• /
• pp.223-226
• /
• 2003

We have developed flexible MIM LCDs by using plastic film substrate. MIM array and cells were fabricated with low temperature process and material technology. As an insulator of MIM, SiNx was introduced at the low temperature allowable for plastic substrate. The fabricated MIM devices show high electrical performance for LC driving. We discuss its process and characteristics.

• 한국정보디스플레이학회:학술대회논문집
• /
• 2002.08a
• /
• pp.519-522
• /
• 2002

In this paper, we analyze the impact of plasma etching process induced device degradation on low temperature poly-Si TFTs. The results indicate the relationship between device degradation and PPID effect during plasma fabrication. The dual-gate structure, which is used to suppress leakage current, is also discussed in this research.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.11 no.8
• /
• pp.658-663
• /
• 1998

Ferrite plating enables were grown by ferrite by plating method in solution at low temperature(<10$0^{\circ}C$). This faciltates the fabrication of new ferrite thin film devices using non- heat-resistant materials(plastic, GaAs ect) as substrates. Combining the ferrite plating with sonochemistry, application of power ultrasonic waves to stimulate chemical reactions, the crystallinity and qualities of films were improved. Modifying the reactions cell and plating conditions further improved the film quality.