• ETRI Journal
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• 제40권2호
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• pp.275-282
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• 2018

Flash reduction of graphene oxide is an efficient method for producing high quality reduced graphene oxide under room temperature ambient conditions without the use of hazardous reducing agents (such as hydrazine and hydrogen iodide). The entire process is fast, low-cost, and suitable for large-scale fabrication, which makes it an attractive process for industrial manufacturing. Herein, we present a simple fabrication method for a flexible in-plane graphene micro-supercapacitor using flash light irradiation. All carbon-based, monolithic supercapacitors with in-plane geometry can be fabricated with simple flash irradiation, which occurs in only a few milliseconds. The thinness of the fabricated device makes it highly flexible and thus useful for a variety of applications, including portable and wearable electronics. The rapid flash reduction process creates a porous graphene structure with high surface area and good electrical conductivity, which ultimately results in high specific capacitance ($36.90mF\;cm^{-2}$) and good cyclic stability up to 8,000 cycles.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2015년도 제49회 하계 정기학술대회 초록집
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• pp.203-203
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• 2015

Gallium Oxide (Ga2O3) has been widely investigated for the optoelectronic applications due to its wide bandgap and the optical transparency. Recently, with the development of fabrication techniques in nanometer scale semiconductor materials, there have been an increasing number of extensive reports on the synthesis and characterization of Ga2O3 nano-structures such as nano-wires, nano-belts, and nano-dots. In contrast to typical vapor-liquid-solid growth mode with metal catalysts to synthesis 1-dimensional nano-wires, there are several difficulties in fabricating the nano-structures by using sputtering techniques. This is attributed to the fact that relatively low growth temperatures and higher growth rate compared with chemical vapor deposition method. In this study, Ga2O3 nanowires (NWs) were synthesized by using radio-frequency magnetron sputtering method. The NWs were then coated by Au thin films and annealed under Ar or N2 gas enviroment with no supply of Gallium and Oxygen source. Several samples were prepared with varying the post annealing parameters such as gas environment annealing time, annealing temperature. Samples were characterized by using XRD, SEM, and PL measurements. In this presentation, the details of fabrication process and physical properties of branched Ga2O3 NWs will be reported.

• 한국초전도ㆍ저온공학회논문지
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• 제18권4호
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• pp.5-8
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• 2016

We report on the fabrication and measurement results of the electrical transport properties of superconductor-normal metal-superconductor (SNS) weak links, made of PbIn superconductor and Au metal. The maximum supercurrent reaches up to ${\sim}6{\mu}A$ at T = 2.3 K and the supercurrent persists even at T = 4.7 K. Magnetic field dependence of the critical current is consistent with a theoretical fit using the narrow junction model. The superconducting quantum interference device (SQUID) was also fabricated using two PbIn-Au-PbIn junctions connected in parallel. Under perpendicular magnetic field, we clearly observed periodic oscillations of dV/dI with a period of magnetic flux quantum threading into the supercurrent loop of the SQUID. Our fabrication methods would provide an easy and simple way to explore the superconducting proximity effects without ultra-low-temperature cryostats.

• 한국주조공학회지
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• 제13권3호
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• pp.248-258
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• 1993

A semi-solid alloy in which solid and liquid phase are co-existing is obtained by stirring of A17075 molten metal. A semi-solid alloy is dependent on the corresponding temperature within the solid-liquid range, and the process parameters should be controlled accurately to obtain the homogeneous semisolid alloy. The fabrication possibility of fiber-reinforced aluminum alloy containing $Al_2O_3$ short fibers with vigorous agitation of short fibers were obtained by control of stirring time, solid fraction and impeller speed in extrusion billet fabrication processes. The microstructure to extrusion billet fabricated by low pressure casting was investigated for fiber dispersion state. The relationship between the extrustion force and velocity at hot extrustion, the flow strain and extrusion ratio were theoretically described. The surface defects with lubricants and without lubricant after hot extrusion were investigated. The composites materials after hot extrusion were measured by vickers hardness with extrusion ratio. It has become clear that the secondary working such as hot extrusion was very useful to obtained improved the mechanical properties of metal matrix composites.

• 한국생산제조학회지
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• 제18권6호
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• pp.697-701
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• 2009

A simple method for the fabrication of porous nano-master for the anti-reflection effect on the transparent substrates is presented. In the conventional fabrication methods for antireflective surface, coating method using materials with low refractive index has usually been used. However, it is required to have a high cost and long processing time for mass production. In this paper, we developed a porous nano-master with anti-reflective surface for the molding stamper of the injection mold, hot embossing and UV imprinting by using the aluminum anodizing process. Through two-step anodizing and etching processes, a porous nano-master with anti-reflective surface was fabricated at the large area. Pattern size Pore diameter and inter-pore distance are about 130nm and 200nm, respectively. In order to replicate anti-reflective structure, hot embossing process was performed by varying the processing parameters such as temperature, pressure and embossing time etc. Finally, antireflective surface can be successfully obtained after etching process to remove selectively silicon layer of AAO master.

• Transactions on Electrical and Electronic Materials
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• 제3권1호
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• pp.4-8
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• 2002

The typical mold method for FED (field emission display) fabrication is used to form a gate electrode, a gate oxide layer, and emitter tip after fabrication of a mold shape using wet-etching of Si substrate. However, in this study, new mold method using a side wall space structure was developed to make sharp emitter tips with the gate electrode. In new method, gate oxide layer and gate electrode layer were deposited on a Si wafer by LPCVD (low pressure chemical vapor deposition), and then BPSG (Boro phosphor silicate glass) thin film was deposited. After then, the BPSG thin film was flowed into the mold at high temperature in order to form a sharp mold structure. TiN was deposited as an emitter tip on it. The unfinished device was bonded to a glass substrate by anodic bonding techniques. The Si wafer was etched from backside by KOH-deionized water solution. Finally, the sharp field emitter array with gate electrode on the glass substrate was formed.

• 소성∙가공
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• 제15권9호
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• pp.692-696
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• 2006

Micro fabrication of polymeric materials becomes increasingly important. And it is considered as a low-cost alternative to the silicon or glass-based Micro Electro-Mechanical System(MEMS) technologies. In the present study, micro channels were fabricated via LiGA(Lithographie, Galvanoformung, Abformung) process used for Capillary Electrophoresis(CE) chip. Taguchi method was applied to investigate the effects of process conditions in injection molding(melt temperature, injection speed, mold temperature and packing pressure) on the transcription characteristics of the micro channel. It was found that the skin layer disturbs a formation of micro channel. Furthermore, mold temperature and injection speed were two important factors to affect the replication characteristics of micro channel.

• 한국세라믹학회지
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• 제56권4호
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• pp.331-339
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• 2019

While high-temperature ceramic composites consisting of carbides, borides, and nitrides, the so-called ultra-high-temperature ceramics (UHTCs), have been commonly produced through solid-state sintering, melt-solidification is an alternative method for their manufacture. As many UHTCs are binary or ternary eutectic systems, they can be melted and solidified at a relatively low temperature via a eutectic reaction. The microstructure of the eutectic composites is typically rod-like or lamellar, as determined by the volume fraction of the second phase. Directional solidification can help fabricate more sophisticated UHTCs with highly aligned textures. This review describes the fabrication of UHTCs through the eutectic reaction and explains their mechanical properties. The use of melt-solidification has been limited to small specimens; however, the recently developed laser technology can melt large-sized UHTCs, suggesting their potential for practical applications. An example of laser melt-solidification of a eutectic ceramic composite is demonstrated.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 추계학술대회 논문집 Vol.14 No.1
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• pp.390-393
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• 2001

This study demonstrated the feasibility of tape casting method to fabricate soda borosilicate glass-coated stainless steel electrostatic chucks(ESC) for low temperature semiconductor processes. The glass coatings on the stainless steel substrates ranged from $100{\mu}m$ to $150{\mu}m$ thick. The adhesion of the glass coatings was found to be excellent such that it was able to withstand moderate impact tests and temperature cycling to over $300^{\circ}C$ without cracking and delamination. The electrostatic clamping pressure generally followed the theoretical voltage-squared curve except at elevated temperatures and higher applied voltages when deviations were observed to occur. The deviation is due to increased leakage current at higher temperature and applied voltage as the electrical resistivity drops.

• 마이크로전자및패키징학회지
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• 제9권3호
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• pp.1-6
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• 2002

A low temperature process technology of copper thin films has been developed by a chemical vapor deposition technology for multi-level metallzations in ULSI fabrication. The copper films were deposited on TiN/Si substrates in helium atmosphere with the substrate temperature between $130^{\circ}C$ and $250^{\circ}C$. In order to get more reliable metallizations, effects on the post-annealing treatment to the electrical properties of the copper films have been investigated. The Cu films were annealed at the $5 \times10^{-6}$ Torr vacuum condition and the electrical resistivity and the nano-structures were measured for the Cu films. The electrical resistivity of Cu films shown to be reduced by the post-annealing. The electrical resistivity of 2.0 $\mu \Omega \cdot \textrm{cm}$ was obtained for the sample deposited at the substrate temperature of $180^{\circ}C$ after vacuum annealed at $300^{\circ}C$. The resistivity variations of the films was not exactly matched with the size of the nano-structures of the copper grains, but more depended on the contamination of the copper films.