• Title/Summary/Keyword: low-power circuits

검색결과 619건 처리시간 0.024초

High speed wide fan-in designs using clock controlled dual keeper domino logic circuits

  • Angeline, A. Anita;Bhaaskaran, V.S. Kanchana
    • ETRI Journal
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    • 제41권3호
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    • pp.383-395
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    • 2019
  • Clock Controlled Dual keeper Domino logic structures (CCDD_1 and CCDD_2) for achieving a high-speed performance with low power consumption and a good noise margin are proposed in this paper. The keeper control circuit comprises an additional PMOS keeper transistor controlled by the clock and foot node voltage. This control mechanism offers abrupt conditional control of the keeper circuit and reduces the contention current, leading to high-speed performance. The keeper transistor arrangement also reduces the loop gain associated with the feedback circuitry. Hence, the circuits offer less delay variability. The design and simulation of various wide fan-in designs using 180 nm CMOS technology validates the proposed CCDD_1 and CCDD_2 designs, offering an increased speed performance of 7.2% and 8.5%, respectively, over a conventional domino logic structure. The noise gain margin analysis proves good robustness of the CCDD structures when compared with a conventional domino logic circuit configuration. A Monte Carlo simulation for 2,000 runs under statistical process variations demonstrates that the proposed CCDD circuits offer a significantly reduced delay variability factor.

특별저전압 직류 전원회로에 유용한 서지방호장치의 설계와 특성 (Design and Behavior of Validating Surge Protective Devices in Extra-low Voltage DC Power Lines)

  • 심서현;이복희
    • 조명전기설비학회논문지
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    • 제29권3호
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    • pp.81-87
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    • 2015
  • In order to effectively protect electrical and electronic circuits which are extremely susceptible to lightning surges, multi-stage surge protection circuits are required. This paper presents the operational characteristics of the two-stage hybrid surge protection circuit in extra-low voltage DC power lines. The hybrid surge protective device consists of the gas discharge tube, transient voltage suppressor, and series inductor. The response characteristics of the proposed hybrid surge protective device to combination waves were investigated. As a result, the proposed two-stage surge protective device to combination wave provides the tight clamping level of less than 50V. The firing of the gas discharge tube to lightning surges depends on the de-coupling inductance and the rate-of-change of the current flowing through the transient voltage suppressor. The coordination between the upstream and downstream components of the hybrid surge protective device was satisfactorily achieved. The inductance of a de-coupler in surge protective circuits for low-voltage DC power lines, relative to a resistance, is sufficiently effective. The voltage drop and power loss due to the proposed surge protective device are ignored during normal operation of the systems.

Transistor Sizing Considering Slew Information to Reduce Glitch Power in CMOS Digital Circuit Design

  • Lee, Hyungwoo;Kim, Juho
    • 대한전자공학회:학술대회논문집
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    • 대한전자공학회 2002년도 ITC-CSCC -2
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    • pp.1058-1061
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    • 2002
  • This paper presents the method of low power optimization considering the glitch reduction in CMOS circuits. Our algorithm utilizes the information of MOS size, the load capacitance of fan-out, and input slew to calculate the output waveform by using the linear signal model. Therefore, the accurate waveform of glitch can be obtained for estimation of power dissipation caused by glitches. Our algorithm is applied to ISCAS’85 benchmark circuits and experimental results show 23% glitch reduction and 11% total power reduction.

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Low power scan testing and efficient test data compression for System-On-a-Chip

  • Jung, Jun-Mo;Chong, Jong-Wha
    • 대한전자공학회:학술대회논문집
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    • 대한전자공학회 2002년도 ITC-CSCC -1
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    • pp.228-230
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    • 2002
  • We present a new low power scan testing and test data compression method for System-On-a-Chip (SOC). The don't cares in unspecified scan vectors are mapped to binary values for low power and encoded by adaptive encoding method for higher compression. Also, the scan-in direction of scan vectors is determined for low power. Experimental results for full-scanned versions of ISCAS 89 benchmark circuits show that the proposed method has both low power and higher compression.

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광송신기용 광파워 안정화 회로의 집적회로 설계 (Intergrated circuit design of power-stabilizing circuitry for optical transmitter)

  • 이성철;박기현;정행근
    • 전자공학회논문지B
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    • 제33B권3호
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    • pp.47-55
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    • 1996
  • An optical transmitter, which is a key component of the optical transmission system, converts the electrical signal to optical signal and consists of a high-speed current-pulse driver for laser diode and low-speed feedback loops that stabilize optical power against aging, power supply voltage fluctuations, and ambient temperature changes. In this paper, the power-stabilizing part, which forms the bulk of the optical transmitter circuitry was designed in integrted circuits. Operational amplifiers and reference voltage generation circuits, which were identified as key building blocks for the power-stabilizing feedback loops, were designed and were subsequently verified through HSPICE simulations. The designed operational amplifier consists of a two-stage folded cascode amplifier and class AB output stage, whereas the reference voltage is obtained by bandgap reference circuits. Finally the power-stabilizing circuitry was laid out based on 3\mu$m CMOS design rules for fabrication.

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VCO Design using NAND Gate for Low Power Application

  • Kumar, Manoj
    • JSTS:Journal of Semiconductor Technology and Science
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    • 제16권5호
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    • pp.650-656
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    • 2016
  • Voltage controlled oscillator (VCO) is widely used circuit component in high-performance microprocessors and modern communication systems as a frequency source. In present work, VCO designs using the different combination of NAND gates with three transistors and CMOS inverter are reported. Three, five and seven stages ring VCO circuits are designed. Coarse and fine tuning have been done using two different supply sources. The frequency with coarse tuning varies from 3.31 GHz to 5.60 GHz in three stages, 1.77 GHz to 3.26 GHz in five stages and 1.27 GHz to 2.32 GHz in seven stages VCO respectively. Moreover, for fine tuning frequency varies from 3.70 GHz to 3.94 GHz in three stages, 2.04 GHz to 2.18 GHz in five stages and 1.43 GHz to 1.58 GHz in seven stages VCO respectively. Results of power consumption and phase noise for the VCO circuits are also been reported. Results of proposed VCO circuits have been compared with previously reported circuits and present circuit approach show significant improvement.

Investigation of Hetero - Material - Gate in CNTFETs for Ultra Low Power Circuits

  • Wang, Wei;Xu, Min;Liu, Jichao;Li, Na;Zhang, Ting;Jiang, Sitao;Zhang, Lu;Wang, Huan;Gao, Jian
    • JSTS:Journal of Semiconductor Technology and Science
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    • 제15권1호
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    • pp.131-144
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    • 2015
  • An extensive investigation of the influence of gate engineering on the CNTFET switching, high frequency and circuit level performance has been carried out. At device level, the effects of gate engineering on the switching and high frequency characteristics for CNTFET have been theoretically investigated by using a quantum kinetic model. It is revealed that hetero - material - gate CNTFET(HMG - CNTFET) structure can significantly reduce leakage current, enhance control ability of the gate on channel, and is more suitable for use in low power and high frequency circuits. At circuit level, using the HSPICE with look - up table(LUT) based Verilog - A models, the performance parameters of circuits have been calculated and the optimum combinations of ${\Phi}_{M1}/{\Phi}_{M2}/{\Phi}_{M3}$ have been concluded in terms of power consumption, average delay, stability, energy consumption and power - delay product(PDP). We show that, compared to a traditional CNTFET - based circuit, the one based on HMG - CNTFET has a significantly better performance (SNM, energy, PDP). In addition, results also illustrate that HMG - CNTFET circuits have a consistent trend in delay, power, and PDP with respect to the transistor size, indicating that gate engineering of CNTFETs is a promising technology. Our results may be useful for designing and optimizing CNTFET devices and circuits.

Evaluation of Bit-Pipelined Array Circuits for Datapath DSP Applications

  • Israsena, Pasin
    • 대한전자공학회:학술대회논문집
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    • 대한전자공학회 2002년도 ITC-CSCC -2
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    • pp.1280-1283
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    • 2002
  • This paper discusses issues in VLSI design and implementation of high performance datapath circuits. Of particular concern will he various types of multiplier and adder, which are fundamental to DSP operations. Performance comparison will be provided in terms of sampling speed, layout area, and in particular, power consumption, with techniques that may be applied to reduce power dissipation also suggested. As an example, a low power, high performance recursive filter achieved through bit-level pipelining technique is illustrated

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Inductorless 8.9 mW 25 Gb/s 1:4 DEMUX and 4 mW 13 Gb/s 4:1 MUX in 90 nm CMOS

  • Sekiguchi, Takayuki;Amakawa, Shuhei;Ishihara, Noboru;Masu, Kazuya
    • JSTS:Journal of Semiconductor Technology and Science
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    • 제10권3호
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    • pp.176- 184
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    • 2010
  • A low-power inductorless 1:4 DEMUX and a 4:1 MUX for a 90 nm CMOS are presented. The DEMUX can be operated at a speed of 25 Gb/s with the power supply voltage of 1.05 V, and the power consumption is 8.9 mW. The area of the DEMUX core is $29\;{\times}\;40\;{\mu}m^2$. The operation speed of the 4:1 MUX is 13 Gb/s at a power supply voltage of 1.2 V, and the power consumption is 4 mW. The area of the MUX core is $30\;{\times}\;18\;{\mu}m^2$. The MUX/DEMUX mainly consists of differential pseudo-NMOS. In these MUX/DEMUX circuits, logic swing is nearly rail-to-rail, and a low $V_{dd}$. The component circuit is more scalable than a CML circuit, which is commonly used in a high-performance MUX/DEMUX. These MUX/DEMUX circuits are compatible with conventional CMOS logic circuit, and it can be directly connected to CMOS logic gates without logic level conversion. Furthermore, the circuits are useful for core-to-core interconnection in the system LSI or chip-to-chip communication within a multi-chip module, because of its low power, small footprint, and reasonable operation speed.

Clark전극에 의한 DO 농도측정을 위한 절전형 센서개발에 관한 연구 (Development of low power type sensor for the DO concentration measurement by clark electrode)

  • 이동희
    • E2M - 전기 전자와 첨단 소재
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    • 제8권3호
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    • pp.254-260
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    • 1995
  • A method is described for the design and fabrication of the sensor interface circuits on the Clark electrodes for the dissolved oxygen(DO). The discussion includes a method for the +5 V single-supply driving for the sensor circuits, which has low power comsumption for the front-end electronics. DO probe under test is composed of the Clark electrode with silver anode, gold cathode and the electrolyte of half saturated KCI solution and the FEP teflon memtrance for the oxygen penetration. Typical polarograms for the DO probes by using this sensor circuit reveals high accuracy over 99% of the I to V conversion. Partial pressure of oxygen obtained from the polarograms are well suited to the results calculated. It is expected that the proposed sensor circuits can be utilized into the customized IC for the battery-driven small-size DO meters.

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