• Title/Summary/Keyword: low-power ADC

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A Rail-to-Rail Input 12b 2 MS/s 0.18 μm CMOS Cyclic ADC for Touch Screen Applications

  • Choi, Hee-Cheol;Ahn, Gil-Cho;Choi, Joong-Ho;Lee, Seung-Hoon
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.9 no.3
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    • pp.160-165
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    • 2009
  • A 12b 2 MS/s cyclic ADC processing 3.3 Vpp single-ended rail-to-rail input signals is presented. The proposed ADC demonstrates an offset voltage less than 1 mV without well-known calibration and trimming techniques although power supplies are directly employed as voltage references. The SHA-free input sampling scheme and the two-stage switched op-amp discussed in this work reduce power dissipation, while the comparators based on capacitor-divided voltage references show a matched full-scale performance between two flash sub ADCs. The prototype ADC in a $0.18{\mu}m$ 1P6M CMOS demonstrates the effective number of bits of 11.48 for a 100 kHz full-scale input at 2 MS/s. The ADC with an active die area of $0.12\;mm^2$ consumes 3.6 m W at 2 MS/s and 3.3 V (analog)/1.8 V (digital).

Differential Capacitor-Coupled Successive Approximation ADC (차동 커패시터 커플링을 이용한 연속근사 ADC)

  • Yang, Soo-Yeol;Mo, Hyun-Sun;Kim, Dae-Jeong
    • Journal of IKEEE
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    • v.14 no.1
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    • pp.8-16
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    • 2010
  • This paper presents a design of the successive approximation ADC(SA-ADC) applicable to a midium-low speed analog-front end(AFE) for the maximum 15MS/s CCD image processing. SA-ADC is effective in applications ranging widely between low and mid data rates due to the large power scaling effect on the operating frequency variations in some other way of pipelined ADCs. The proposed design exhibits some distinctive features. The "differential capacitor-coupling scheme" segregates the input sampling behavior from the sub-DAC incorporating the differential input and the sub-DAC output, which prominently reduces the loading throughout the signal path. Determining the MSB(sign bit) from the held input data in advance of the data conversion period, a kind of the signed successive approximation, leads to the reduction of the sub-DAC hardware overhead by 1 bit and the conversion period by 1 cycle. Characterizing the proposed design in a 3.3 V $0.35-{\mu}m$ CMOS process by Spectre simulations verified its validity of the application to CCD analog front-ends.

A 1V 10b 30MS/s CMOS ADC Using a Switched-RC Technique (스위치-RC 기법을 이용한 1V 10비트 30MS/s CMOS ADC)

  • Ahn, Gil-Cho
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.46 no.8
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    • pp.61-70
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    • 2009
  • A 10b 30MS/s pipelined ADC operating under 1V power supply is presented. It utilizes a switched-RC based input sampling circuit and a resistive loop to reset the feedback capacitor in the multiplying digital-to-analog converter (MDAC) for the low-voltage operation. Cascaded switched-RC branches are used to achieve accurate grain of the MDAC for the first stage and separate switched-RC circuits are used in the sub-ADC to suppress the switching noise coupling to the MDAC input The measured differential and integral non-linearities of the prototype ADC fabricated in a 0.13${\mu}m$, CMOS process are less than 0.54LSB and 1.75LSB, respectively. The prototype ADC achieves 54.1dB SNDR and 70.4dB SFDR with 1V supply and 30MHz sampling frequency while consuming 17mW power.

A 10b 100MS/s 27.2mW $0.8mm^2$ 0.18um CMOS Pipeline ADC with Various Circuit Sharing Schemes (다양한 회로 공유기법을 사용하는 10비트 100MS/s 27.2mW $0.8mm^2$ 0.18um CMOS Pipeline ADC)

  • Yoon, Kun-Yong;Lee, Se-Won;Choi, Min-Ho;Lee, Seung-Hoon
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.46 no.4
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    • pp.53-63
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    • 2009
  • This work proposes a 10b 100MS/s 27.2mW $0.8mm^2$ 0.18um CMOS ADC for WLAN such as an IEEE 802.11n standard. The proposed ADC employs a three-stage pipeline architecture and minimizes power consumption and chip area by sharing as many circuits as possible. Two multiplying DACs share a single amplifier without MOS switches connected in series while the shared amplifier does not show a conventional memory effect. All three flash ADCs use only one resistor ladder while the second and third flash ADCs share all pre-amps to further reduce power consumption and chip area. The interpolation circuit employed in the flash ADCs halves the required number of pre-amps and an input-output isolated dynamic latch reduces the increased kickback noise caused by the pre-amp sharing. The prototype ADC implemented in a 0.18um n-well 1P6M CMOS process shows the DNL and INL within 0.83LSB and 1.52LSB at 10b, respectively. The ADC measures an SNDR of 52.1dB and an SFDR of 67.6dB at a sampling rate of 100MS/s. The ADC with an active die area of $0.8mm^2$ consumes 27.2mW at 1.8V and 100MS/s.

Design of LUT-Based Decimation Filter for Continuous-Time PWM ADC (연속-시간 펄스-폭-변조 ADC를 위한 LUT 기반 데시메이션 필터 설계)

  • Shim, Jae Hoon
    • Journal of IKEEE
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    • v.23 no.2
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    • pp.461-468
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    • 2019
  • A continuous-time Delta-Sigma ADC has various benefits; it does not require an explicit anti-aliasing filter, and it is able to handle wider-band signals with less power consumption in comparison with a discrete-time Delta-Sigma ADC. However, it inherently needs to sample the signal with a high-speed clock, necessitating a complex decimation filter that operates at high speed in order to convert the modulator output to a low-rate high-resolution digital signals without causing aliasing. This paper proposes a continuous-time Delta-Sigma ADC architecture that employs pulse-width modulation and shows that the proposed architecture lends itself to a simpler implementation of the decimation filter using a lookup table.

Desgin of Low-power, Low-noise Preamplifier for Digital Hearing-Aids (디지털 보청기를 위한 저전력, 저잡음 전치증폭기 설계)

  • Im, Saemin;Park, Sang-Gyu
    • Journal of the Institute of Electronics and Information Engineers
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    • v.49 no.12
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    • pp.219-225
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    • 2012
  • A low-power, low-noise pre-amplifier for digital hearing-aid application is designed. This pre-amplifier amplifies single-ended signal from an electret microphone, and produces differential output to be delivered to an ADC. It has a variable gain of 3.6, 7.2, 14.4 and 28.8 with a bandwidth between 100Hz~10kHzon. The measurement results show 85 dB of SNR, 0.05 % of harmonic distortion and $200{\mu}W$ of power consumption with 1.2V supply.

Design of a 6-bit 500MS/s CMOS A/D Converter with Comparator-based Input Voltage Range Detection Circuit

  • Dae, Si;Yoon, Kwang Sub
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.14 no.6
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    • pp.706-711
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    • 2014
  • A low power 6-bit flash ADC that uses an input voltage range detection algorithm is described. An input voltage level detector circuit has been designed to overcome the disadvantages of the flash ADC which consume most of the dynamic power dissipation due to comparators array. In this work, four digital input voltage range detectors are employed and each input voltage range detector generates the specific clock signal only if the input voltage falls between two adjacent reference voltages applied to the detector. The specific clock signal generated by the detector is applied to turn the corresponding latched comparators on and the rest of the comparators off. This ADC consumes 68.82 mW with a single power supply of 1.2V and achieves 4.3 effective number of bits for input frequency up to 1 MHz at 500 MS/s. Therefore it results in 4.6 pJ/step of Figure of Merit (FoM). The chip is fabricated in 0.13-um CMOS process.

High Frame Rate CMOS Image Sensor with Column-wise Cyclic ADC (컬럼 레벨 싸이클릭 아날로그-디지털 변환기를 사용한 고속 프레임 레이트 씨모스 이미지 센서)

  • Lim, Seung-Hyun;Cheon, Ji-Min;Lee, Dong-Myung;Chae, Young-Cheol;Chang, Eun-Soo;Han, Gun-Hee
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.47 no.1
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    • pp.52-59
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    • 2010
  • This paper proposes a high-resolution and high-frame rate CMOS image sensor with column-wise cyclic ADC. The proposed ADC uses the sharing techniques of OTAs and capacitors for low-power consumption and small silicon area. The proposed ADC was verified implementing the prototype chip as QVGA image sensor. The measured maximum frame rate is 120 fps, and the power consumption is 130 mW. The power supply is 3.3 V, and the die size is $4.8\;mm\;{\times}\;3.5\;mm$. The prototype chip was fabricated in a 2-poly 3-metal $0.35-{\mu}m$ CMOS process.

Range-Scaled 14b 30 MS/s Pipeline-SAR Composite ADC for High-Performance CMOS Image Sensors

  • Park, Jun-Sang;Jeong, Jong-Min;An, Tai-Ji;Ahn, Gil-Cho;Lee, Seung-Hoon
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.16 no.1
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    • pp.70-79
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    • 2016
  • This paper proposes a low-power range-scaled 14b 30 MS/s pipeline-SAR composite ADC for high-performance CIS applications. The SAR ADC is employed in the first stage to alleviate a sampling-time mismatch as observed in the conventional SHA-free architecture. A range-scaling technique processes a wide input range of 3.0VP-P without thick-gate-oxide transistors under a 1.8 V supply voltage. The first- and second-stage MDACs share a single amplifier to reduce power consumption and chip area. Moreover, two separate reference voltage drivers for the first-stage SAR ADC and the remaining pipeline stages reduce a reference voltage disturbance caused by the high-speed switching noise from the SAR ADC. The measured DNL and INL of the prototype ADC in a $0.18{\mu}m$ CMOS are within 0.88 LSB and 3.28 LSB, respectively. The ADC shows a maximum SNDR of 65.4 dB and SFDR of 78.9 dB at 30 MS/s, respectively. The ADC with an active die area of $1.43mm^2$ consumes 20.5 mW at a 1.8 V supply voltage and 30 MS/s, which corresponds to a figure-of-merit (FOM) of 0.45 pJ/conversion-step.

Design of a Low Power 3V 6-bit 100MSPS CMOS ADC for DBS Receiver (위성방송 수신기용 저전력 3V 6-bit 100MSPS COMS ADC의 설계)

  • Moon, Jae-Jun;Song, Min-Kyu
    • Journal of the Korean Institute of Telematics and Electronics C
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    • v.36C no.12
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    • pp.20-26
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    • 1999
  • A CMOS 6-bit 100MSPS ADC for DBS receiver is designed. The proposed ADC is composed of folding block, latch block, and digital block. The cascode interpolating block and kickback reduced latch are proposed with a high speed architecture. To verify the performance of ADC, simulations are carried out by HSPICE. The ADC achieves a clock frequency of 100MHz with a power dissipation of 40mW for 3 V supply voltage. The active chip area is $1500{\mu}m{\times}1000{\mu}m$with $0.65{\mu}m$ 2-poly 2-metal CMOS process. Further, INL and DNL are within ${\pm}0.6LSB$, ${\pm}0.5LSB$, respectively. SNDR is about 33dB at 10MHz input frequency.

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