• Journal of Sensor Science and Technology
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• v.4 no.1
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• pp.29-34
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• 1995

The absolute silicon pressure sensors are fabricated using SDB(silicon direct bonded) wafer. The fabricated pressure sensors consist of four bridge type piezoresistances and a diaphragm which plays a role of mechanic amplifier to supplying pressure. In order to make the diaphragm cavity in low vaccum condition, we anodically bonded Si diaphragm with pyrex 7740 glass in 0.02mmHg, at $400^{\circ}C$. The sensitivity and offset voltage of the fabricated sensors were $30.4{\mu}V/VmmHg$ and 30.6mV, respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.95-96
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• 2009

A fully depleted capacitorless 1-transistor dynamic random access memory (FD 1T-DRAM) based on a sSOI strained-silicon-on-insulator) wafer was investigated. The fabricated device showed excellent electrical characteristics of transistor such as low leakage current, low subthreshold swing, large on/off current ratio, and high electron mobility. The FD sSOI 1T-DRAM can be operated as memory device by the floating body effect when the substrate bias of -15 V is applied, and the FD sSOI 1T-DRAM showed large sensing margin and several milli seconds data retention time.

• Journal of Advanced Navigation Technology
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• v.14 no.3
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• pp.426-431
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• 2010

68% of the manufacturing costs of solar cell wafer can be attributed to the slurry. The recycling of slurries is mandatory for reducing the costs of manufacturing wafering production, and the disposal of industrial waste, as well as for cutting down pollution levels. Slurries are currently being recycled using the centrifuge(decanter) method. However, this method is less than optimal as it does not completely remove the fine particles, leading to low quality. Also, be cause of the incomplete separation from the oil, it causes the impurities in the dried slurries. This study aims to develope a new recycling technology that overcomes the flaws of the centrifuge by utilizing chemicals. It will provide a total solution to the crucial process of recycling slurries in the making of solar cell wafer, by increasing the efficiency and renewable rate.

• Korean Journal of Materials Research
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• v.11 no.1
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• pp.55-60
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• 2001

The effect of high energy B ion implantation and initial oxygen concentration upon defect formation and gettering of metallic impurities in Czochralski silicon wafer has been studied by applying DLTS( Deep Level Transient Spectroscopy), SIMS(Secondary ton Mass Spectroscopy), BMD (Bulk Micro-Defect) analysis and TEM(Transmission Electron Microscopy). DLTS results show the signal of the deep levels not only in as-implanted samples but also in low and high temperature annealed samples. Vacancy-related deep levels in as- implanted samples were changed to metallic impurities-related deep levels with increase of annealing temperature. In the case of high temperature anneal, by showing the lower deep level concentration with increase of initial oxygen concentration, high initial oxygen concentration seems to be more effective compared with the lower initial oxygen one.

• Journal of the Korean Vacuum Society
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• v.20 no.3
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• pp.217-224
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• 2011

of materials and simplification of process. Micro-blasting is one of the promising method for recycling of waste wafer due to their simple and low cost process. Therefore, in this paper, we make recycling wafer through the micro-blaster. A surface etched by micro-blaster forms particles, cracks and pyramid structure. A pyramid structure formed by micro-blaster has a advantage of reflectivity decrease. However, lifetime of minority carrier is decreased by particles and cracks. In order to solve this problems, we carried out the DRE(Damage Romove Etching). There are two ways to DRE process ; wet etching, dry etching. After the DRE process, we measured reflectivity and lifetime of minority carrier. Through these results, we confirmed that a wafer recycled can be used in solar cell.

• Journal of the Korean institute of surface engineering
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• v.29 no.5
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• pp.505-511
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• 1996

The field emission characteristics of diamond films deposited by microwave plasma enhanced chemical vapor deposition (MPECVD) method were investigated. Diamond films were deposited on n-type Si(100) wafer using various mixtures of hydrogen and methane gas, and the I-V characteristics are measured. We observed that the field emission characteristics depend on the $CH_4$ concentration and the diamond film thickness. All the films show remarkable emission characteristics; low turn-on voltage, high emission current density at lower voltage, uniform stable current density, and good stability and reproducibility. The threshold field for producing a current density of 1mA/$\textrm{cm}^2$ is found as low as 7.6V/$\mu\textrm{m}$.

• Korean Journal of Materials Research
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• v.11 no.7
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• pp.556-561
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• 2001

We prepared a new a SOS(silicon-on-silicide) wafer pair which is consisted of Si(100)/1000$\AA$-NiSi Si (100) layers. SOS can be employed in MEMS(micro- electronic-mechanical system) application due to low resistance of the NiSi layer. A thermally evaporated $1000\AA$-thick Ni/Si wafer and a clean Si wafer were pre-mated in the class 100 clean room, then annealed at $300~900^{\circ}C$ for 15hrs to induce silicidation reaction. SOS wafer pairs were investigated by a IR camera to measure bonded area and probed by a SEM(scanning electron microscope) and TEM(transmission electron microscope) to observe cross-sectional view of Si/NiSi. IR camera observation showed that the annealed SOS wafer pairs have over 52% bonded area in all temperature region except silicidation phase transition temperature. By probing cross-sectional view with SEM of magnification of 30,000, we found that $1000\AA$-thick uniform NiSi layer was formed at the center area of bonded wafers without void defects. However we observed debonded area at the edge area of wafers. Through TEM observation, we found that $10-20\AA$ thick amourphous layer formed between Si surface and NiSix near the counter part of SOS. This layer may be an oxide layer and lead to degradation of bonding. At the edge area of wafers, that amorphous layer was formed even to thickness of $1500\AA$ during annealing. Therefore, to increase bonding area of Si NiSi ∥ Si wafer pairs, we may lessen the amorphous layers.

• Journal of the Microelectronics and Packaging Society
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• v.12 no.3 s.36
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• pp.197-205
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• 2005

Development of the packaging is one of the critical issues for commercialization of the RF-MEMS devices. RF MEMS package should be designed to have small size, hermetic protection, good RF performance and high reliability. In addition, packaging should be conducted at sufficiently low temperature. In this paper, a low temperature hermetic wafer level packaging scheme for the RF-MEMS devices is presented. For hermetic sealing, Au-Sn eutectic bonding technology at the temperature below $300{\times}C$ is used. Au-Sn multilayer metallization with a square loop of $70{\mu}m$ in width is performed. The electrical feed-through is achieved by the vertical through-hole via filled with electroplated Cu. The size of the MEMS Package is $1mm\times1mm\times700{\mu}m$. By applying $O_2$ plasma ashing and fabrication process optimization, we can achieve the void-free structure within the bonding interface as well as via hole. The shear strength and hermeticity of the package satisfy the requirements of MIL-STD-883F. Any organic gases or contamination are not observed inside the package. The total insertion loss for the packaging is 0.075 dB at 2 GHz. Furthermore, the robustness of the package is demonstrated by observing no performance degradation and physical damage of the package after several reliability tests.

• Transactions of the Korean Society for Noise and Vibration Engineering
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• v.16 no.12 s.117
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• pp.1272-1278
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• 2006

This paper presents a novel MEMS condenser microphone with rigid backplate to enhance acoustic characteristics. The MEMS condenser microphone consists of membrane and backplate chips which are bonded together by gold-tin(Au/Sn) eutectic solder bonding. The membrane chip has $2.5mm{\times}2.5mm$, 0.5${\mu}m$ thick low stress silicon nitride membrane, $2mm{\times}2mm$ Au/Ni/Cr membrane electrode, and 3${\mu}m$ thick Au/Sn layer. The backplate chip has $2mm{\times}2mm$, 150${\mu}m$ thick single crystal silicon rigid backplate, $1.8mm{\times}1.8mm$ backplate electrode, and air gap, which is fabricated by bulk micromachining and silicon deep reactive ion etching. Slots and $50{\sim}60{\mu}m$ radius circular acoustic holes to reduce air damping are also formed in the backplate chip. The fabricated microphone sensitivity is 39.8 ${\mu}V/Pa$(-88 dB re. 1 V/Pa) at 1 kHz and 28 V polarization voltage. The microphone shows flat frequency response within 1 dB between 20 Hz and 5 kHz.

• Membrane and Water Treatment
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• v.3 no.4
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• pp.221-230
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• 2012

This study employed the modified fouling index (MFI) to determine the performance of a two-step recycling system - a membrane filtration integrated laminar flow water storage (LFWS) tank followed by an ion exchange process to reclaim ultrapure water (UPW) from the wastewater generated from semiconductor wafer backgrinding and sawing processes. The first step consisted of the utilization of either ultrafiltration (UF) or nanofiltration (NF) membranes to remove solids in the wastewater where the second step consisted of an ion exchanger to further purify the filtrate. The system was able to produce high purity water in a continuous operating mode. However, higher recycling cost could be incurred due to membrane fouling. The feed wastewater used for this study contained high concentration of fine particles with low organic and ionic contents, hence membrane fouling was mainly attributed to particulate deposition and cake formation. Based on the MFI results, a LFWS tank that was equipped with a turbulence reducer with a pair of auto-valves was developed and found effective in minimizing fouling by discharging concentrated wastewater prior to any membrane filtration. By comparing flux behaviors of the improved system with the conventional system, the former maintained a high flux than the latter at the end of the experiment.