• The Transactions of the Korean Institute of Power Electronics
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• v.24 no.5
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• pp.372-378
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• 2019

This study proposes a new zero-current-zero-voltage-transition (ZCZVT) boost-flyback converter using a soft switching auxiliary circuit. The proposed converter integrates the boost and flyback converters to increase the voltage with a low duty ratio. The main and auxiliary switches turn the ZCZVT conditions on and off. Thus, the proposed converter has high efficiency. The voltage gain at the steady state is derived, and the inductor volt-second balance and the design guidelines are presented. Finally, the performance of the proposed converter is validated by experimental results from a 200 W, 30 V DC input, 400 V DC output, and 200 kHz boost-flyback converter prototype.

• Journal of Electrical Engineering and Technology
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• v.6 no.5
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• pp.666-670
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• 2011

In this paper, a method for detecting broken rotor bar and stator winding fault in a low voltage squirrel-case induction motor using an air-gap flux variation analysis is proposed to develop a simple and low cost diagnosis technique. To measure the leakage flux in radial direction, a radial flux sensor is designed as a search coil and installed between stator slots. The proposed method is able to identify two kinds of motor faults by calculating load condition of motors and monitoring abnormal signals those are related with motor faults. Experimental results obtained on 7.5kW three-phase squirrel-cage induction motors are discussed to verify the performance of the proposed method.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.30 no.7
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• pp.432-436
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• 2017

IZO transistors with $Al_2O_3$ as gate dielectrics have been investigated. To improve permittivity in an ambient dielectric layer, we grew $Al_2O_3$ by atomic layer deposition directly onto the substrates. Then, we prepared IZO semiconductor solutions with 0.1 M indium nitrate hydrate [$In(NO_3)_3{\cdot}xH_2O$] and 0.1 M zinc acetate dehydrate [$Zn(CH_3COO)_2{\cdot}2H_2O$] as precursor solutions; the IZO solution made with a molar ratio of 7:3 was then prepared. It has been found that these oxide transistors exhibit low operating voltage, good turn-on voltage, and an average field-effect mobility of $0.90cm^2/Vs$ in ambient conditions. Studies of low-voltage driving of IZO transistors with atomic layer-deposited high-k $Al_2O_3$ as gate dielectric provide data of relevance for the potential use of these materials and this technology in transparent display devices and displays.

• Proceedings of the Korean Institute of IIIuminating and Electrical Installation Engineers Conference
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• 2007.05a
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• pp.473-477
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• 2007

The development of advanced Insulated Gate Bipolar Transistor(IGBT)has enabled high-frequency switching operation and has improved the performance of PWM inverters for motor drive. However, the high rate of dv/dt of IGBT has adverse effects on motor insulation stress. In many motor drive applications, the inverter and motor are separated and it requires long motor feds. The long cable contributes high frequency ringing at the motor terminal and it results in hight surge voltage which stresses the motor insulation. The inverter output filter and RDC snubber are conventional method which can reduce the surge voltage. In this paper, we propose the new low loss snubber to reduce the motor terminal surge voltage. The snubber consists of the series connection of charging/discharging capacitor and the voltage-clamped capacitor. At IGBT turn-off, the snubber starts to operate when the IGBT voltage reaches the voltage-clamped level. Since dv/dt is decreased by snubber operating, the peak level of the surge voltage can be reduced. Also the snubber operates at the IGBT voltage above the voltage-clamped level, the snubber loss is largely reduced comparing with RDC snubber. The proposed snubber enables to reduce the motor terminal surge voltage with low loss.

• Journal of the Korean institute of surface engineering
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• v.29 no.5
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• pp.505-511
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• 1996

The field emission characteristics of diamond films deposited by microwave plasma enhanced chemical vapor deposition (MPECVD) method were investigated. Diamond films were deposited on n-type Si(100) wafer using various mixtures of hydrogen and methane gas, and the I-V characteristics are measured. We observed that the field emission characteristics depend on the $CH_4$ concentration and the diamond film thickness. All the films show remarkable emission characteristics; low turn-on voltage, high emission current density at lower voltage, uniform stable current density, and good stability and reproducibility. The threshold field for producing a current density of 1mA/$\textrm{cm}^2$ is found as low as 7.6V/$\mu\textrm{m}$.

• Journal of Power Electronics
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• v.16 no.6
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• pp.2035-2044
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• 2016

In order to match the voltages between high voltage battery stacks and low voltage super-capacitors with a high conversion efficiency in hybrid energy sources electric vehicles (HESEVs), a high ratio bidirectional DC-DC converter with a synchronous rectification H-Bridge is proposed in this paper. The principles of high ratio step-down and step-up operations are analyzed. In terms of the bidirectional characteristic of the H-Bridge, the bidirectional synchronous rectification (SR) operation is presented without any extra hardware. Then the SR power switches can achieve zero voltage switching (ZVS) turn-on and turn-off during dead time, and the power conversion efficiency is improved compared to that of the diode rectification (DR) operation, as well as the utilization of power switches. Experimental results show that the proposed converter can operate bidirectionally in the wide ratio range of 3~10, when the low voltage continuously varies between 15V and 50V. The maximum efficiencies are 94.1% in the Buck mode, and 93.6% in the Boost mode. In addition, the corresponding largest efficiency variations between SR and DR operations are 4.8% and 3.4%. This converter is suitable for use as a power interface between the battery stacks and super-capacitors in HESEVs.

• Journal of Electrical Engineering and Technology
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• v.9 no.2
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• pp.686-694
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• 2014

A power semiconductor device, usually used as a switch or rectifier, is very significant in the modern power industry. The power semiconductor, in terms of its physical properties, requires a high breakdown voltage to turn off, a low on-state resistance to reduce static loss, and a fast switching speed to reduce dynamic loss. Among those parameters, the breakdown voltage and on-state resistance rely on the doping concentration of the drift region in the power semiconductor, this effect can be more important for a higher voltage device. Although the low doping concentration in the drift region increases the breakdown voltage, the on-state resistance that is increased along with it makes the static loss characteristic deteriorate. On the other hand, although the high doping concentration in the drift region reduces on-state resistance, the breakdown voltage is decreased, which limits the scope of its applications. This addresses the fact that breakdown voltage and on-state resistance are in a trade-off relationship with a parameter of the doping concentration in the drift region. Such a trade-off relationship is a hindrance to the development of power semiconductor devices that have idealistic characteristics. In this study, a novel structure is proposed for the Insulated Gate Bipolar Transistor (IGBT) device that uses conductivity modulation, which makes it possible to increase the breakdown voltage without changing the on-state resistance through use of a P-floating layer. More specifically in the proposed IGBT structure, a P-floating layer was inserted into the drift region, which results in an alleviation of the trade-off relationship between the on-state resistance and the breakdown voltage. The increase of breakdown voltage in the proposed IGBT structure has been analyzed both theoretically and through simulations, and it is verified through measurement of actual samples.

• Journal of Power Electronics
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• v.16 no.6
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• pp.2005-2015
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• 2016

A high-step-up DC/DC converter for renewable energy systems is proposed. The proposed structure provides high voltage gain by using a coupled inductor without the need for high duty cycles and high turn ratios. The voltage gain is increased through capacitor-charging techniques. In the proposed converter, the energy of the leakage inductors of the coupled inductor is reused. This feature reduces the stress on the switch. Therefore, a switch with low ON-state resistance can be used in the proposed converter to reduce losses and increase efficiency. The main switch is placed in series with the source. Therefore, the converter can control the energy flow from the source to the load. The operating principle is discussed in detail, and a steady state analysis of the proposed converter is conducted. The performance of the proposed converter is verified by experimental results.

• JSTS:Journal of Semiconductor Technology and Science
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• v.17 no.3
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• pp.354-362
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• 2017

We investigated the improvement in electrical characteristics of large AlGaN/GaN on Si Schottky barrier diode (SBD) induced by structural change to achieve a better trade-off between the forward and reverse performance to obtain high power conversion efficiency in PFC converter. Using an optimized dry etch condition for a large device, we fabricated three-types of SBD with 63 mm channel width: conventional, recessed, recessed dual-anode-metal SBD. The recessed dual-anode-metal SBD exhibited a very low turn-on voltage of 0.34 V, a high forward current of 1.63 A at 1.5 V, a leakage current of $114{\mu}A$ at -15 V, a breakdown voltage of 794 V.

• Proceedings of the KIPE Conference
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• 2018.07a
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• pp.99-101
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• 2018

This paper present an input-series output-parallel active-clamp-forward converter for low voltage dc/dc xEV application. The converter can achieve ZVS turn-on for all switches. An accurate small signal model of the converter which includes the effect of leakage inductance is given and controller design based on modeling is described. Experimental and simulation results from a 3.2kW, 100kHz prototype are presented in order to verify the validity of the converter operation and the designed control parameters.