• Proceedings of the KIPE Conference
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• 2001.12a
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• pp.119-123
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• 2001

In this paper, a DCM operated boost integrated single-stage forward-flyback converter is proposed. This proposed converter has high power factor, low harmonic distortion, and tight output regulation. To increase efficiency, zero voltage switching with asymmetrical control is used. This converter also give low voltage stress in switch and this results in low conduction loss with low turn-on resistance.

• KIEE International Transaction on Electrical Machinery and Energy Conversion Systems
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• v.4B no.2
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• pp.54-58
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• 2004

This paper presents the iron core design method of a high temperature superconducting (HTS) transformer considering voltages per turn (V/T). In this research, solenoid type HTS coils were selected for low voltage (LV) winding and double pancake coils for high voltage (HV) winding, just as in conventional large power transformers. V/T is one of the most fundamental elements used in designing transformers, as it decides the core cross sectional area and the number of primary and secondary winding turns. By controlling the V/T, the core dimension and core loss can be changed diversely. The leakage flux is another serious consideration in core design. The magnetic field perpendicular to the HTS wire causes its critical current to fall rapidly as the magnitude of the field increases slowly. Therefore in the design of iron core as well as superconducting windings, contemplation of leakage flux should be preceded. In this paper, the relationship between the V/T and core loss was observed and also, through computational calculations, the leakage magnetic fields perpendicular to the windings were found and their critical current decrement effects were considered in relation to the core design. The ％ impedance was calculated by way of the numerical method. Finally, various models were suggested.

• Journal of Power Electronics
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• v.7 no.3
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• pp.181-190
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• 2007

This paper presents a novel circuit topology of a DC bus line series switch and parallel snubbing capacitor-assisted soft-switching PWM full-bridge inverter type DC-DC power converter with a high frequency planar transformer link, which is newly developed for high performance arc welding machines in industry. The proposed DC-DC power converter circuit is based upon a voltage source-fed H type full-bridge soft-switching PWM inverter with a high frequency transformer. This DC-DC power converter has a single power semiconductor switching device in series with an input DC low side rail and loss less snubbing capacitor in parallel with the inverter bridge legs. All the active power switches in the full-bridge arms and DC bus line can achieve ZCS turn-on and ZVS turn-off transition commutation. Consequently, the total switching power losses occurred at turn-off switching transition of these power semiconductor devices; IGBTs can be reduced even in higher switching frequency bands ranging from 20 kHz to 100 kHz. The switching frequency of this DC-DC power converter using IGBT power modules can be realized at 60 kHz. It is proved experimentally by power loss analysis that the more the switching frequency increases, the more the proposed DC-DC power converter can achieve a higher control response performance and size miniaturization. The practical and inherent effectiveness of the new DC-DC converter topology proposed here is actually confirmed for low voltage and large current DC-DC power supplies (32V, 300A) for TIG arc welding applications in industry.

• Proceedings of the International Microelectronics And Packaging Society Conference
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• 2002.05a
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• pp.92-97
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• 2002

We establish a visible light emission from porous polycrystalline silicon nano structure(PPNS). The PPNS layer are formed on heavily doped n-type Si substrate. 2um thickness of undoped polycrystalline silicon deposited using LPCVD (Low Pressure Chemical Vapor Deposition) anodized in a HF: ethanol(=1:1) as functions of anodizing conditions. And then a PPNS layer thermally oxidized for 1 hr at $900 ^{\circ}C$. Subsequently, thin metal Au as a top electrode deposited onto the PPNS surface by E-beam evaporator and, in order to establish ohmic contact, an thermally evaporated Al was deposited on the back side of a Si-substrate. When the top electrode biased at +6V, the electron emission observed in a PPNS which caused by field-induces electron emission through the top metal. Among the PPNSs as functions of anodization conditions, the PPNS anodized at a current density of $10mA/cm^2$ for 20 sec has a lower turn-on voltage and a higher emission current. Furthermore, the behavior of electron emission is uniformly maintained.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.18 no.8
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• pp.729-733
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• 2005

Al electrode for OLED was deposited by FTS (Facing Targets Sputtering) system which can deposit thin films with low substrate damage. The Al thin films were deposited on the cell (LiF/EML/HTL/Bottom electrode) as a function of working gas such as Ar or Ar+kr mixed gas. Also Al thin films were prepared with working gas pressure (1, 6 mTorr). The film thickness and I-V curve of Al/cell were measured and evaluated. In the results, when Al thin films were deposited using pure Ar gas, the turn-on voltage of Al/cell was about 11 V. And using the Ar:Kr($75\%:25\%$) mixed gas, the turn-on voltage of Al/cell decreased to about 7 V.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.05a
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• pp.72-75
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• 2005

In this study Al electrode for OLED was deposited by FTS(Facing Targets Sputtering) system which can deposit thin films with low substrate damage. The Al thin films were deposited on the cell(LiF/EML/HTL/Bottom electrode) as a function of working gas such as Ar, Kr or mixed gas. Also Al thin films were prepared with working gas pressure (1, 6 mTorr ). The film thickness and I-V curve of Al/cell were evaluated by $\alpha$-step and semiconductor parameter (HP4156A) measurement. In the results, when Al thin film were deposited using pure Ar gas, the turn-on voltage of Al/cell was about 11[V]. And the turn-on voltage of Al/cell can be decrease to about 7[V].

• Korean Journal of Materials Research
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• v.10 no.4
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• pp.301-304
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• 2000

A new triode type Co-silicided Si FEA(field emitter array) was realized by Co-silicidation of Co coated Si FEA and its field emission properties were investigated. The field emission properties of the fabricated device through the unit pixel with $45{\times}45$ tip array in the area of $250{\mu\textrm{m}}{\times}250{\mu\textrm{m}}$ under high vacuum condition of $10^{-8}Torr$ were as follows : the turn-on voltage was about 35V and the anode current was about $1.2\mu\textrm{A}(0.6㎁/tip)$ at the bias of $V_A=500V\;and\; V_G=55V$. The fabricated device showed the stable electrical characteristics without degradation of field emission current for the long term operation except for the initial transient state. The low turn-on voltage and the high current stability of the Co-silicided Si FEA were due to the thermal and chemical stability and the low work function of silicide layer formed at the surface of Si tip.

• Proceedings of the KIEE Conference
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• 2009.07a
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• pp.2019_2020
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• 2009

A recurrent surge oscillograph(RSO) test was performed at the Taean thermal power plant on #5 turbine generator. The test was conducted using a rotor reflectometer and digital oscilloscope. A DC voltage step is applied to each end of the rotor winding in turn. Each reflected wave, at the input end of the winding, is monitored and the two waveforms are superimposed automatically and monitored on a single channel oscilloscope. As the half windings in a rotor are identical, the two waveforms monitored at each end of the rotor will also be identical for a healthy winding. A winding with a fault will cause different voltages to be monitored at the two ends.

• Proceedings of the KIEE Conference
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• 1994.07a
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• pp.237-239
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• 1994

The MOS-controlled thyristor(MCT) is a new power semi-conductor device that combines four layers thyristor structure presenting regenerative action and MOS-gate providing controlled turn-on and turn-off. The MCT has very fast switching speed owing to voltage controlled MOS-gate, and very low on-state voltage drop resulting from regenerative action of four layers thyristor structure. In addition, because of a higher dv/dt rating and di/dt rating, gate drive circuit and snubber circuit can be simpler comparing to other power switching devices. So recently much interest and endeavor is being applied to develop the performance and ratings of the MCT. This paper describes the switching characteristic of the MCT for its practical applications and presents a model for PSPICE circuit simulation. The model for PSPICE circuit simulation is compared to the experimental result using MCTV75P60F1 made by Harris co..

• The Transactions of the Korean Institute of Power Electronics
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• v.25 no.6
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• pp.484-489
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• 2020

This study proposes a new soft-switching three-level flying capacitor converter with low filter inductance. The proposed converter can achieve zero voltage switching (ZVS) turn-on of all switches by using auxiliary components La and Ca. It can also reduce filter inductance because the applied voltage of the filter inductor is decreased by using the flying capacitor. Furthermore, filter inductance can be reduced because the operating frequency of the filter inductor is doubled by the phase shifting between switches S3 and S4. The operation principle, design of passive components for ZVS turn-on, interleaving effects, and comparison of different topologies are presented. The experimental waveforms of a 1 kW two-phase interleaved converter prototype are provided to verify the validity of the proposed converter.