Journal of the Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회논문지)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Preparation of Al Cathode for OLED by Sputtering Method

스퍼터링법을 이용한 OLED용 Al 음전극 제작

  • 금민종 (경원대학교 전기공학과) ;
  • 김경환 (경원대학교 전기공학과)
  • Published : 2005.08.01
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Abstract

Al electrode for OLED was deposited by FTS (Facing Targets Sputtering) system which can deposit thin films with low substrate damage. The Al thin films were deposited on the cell (LiF/EML/HTL/Bottom electrode) as a function of working gas such as Ar or Ar+kr mixed gas. Also Al thin films were prepared with working gas pressure (1, 6 mTorr). The film thickness and I-V curve of Al/cell were measured and evaluated. In the results, when Al thin films were deposited using pure Ar gas, the turn-on voltage of Al/cell was about 11 V. And using the Ar:Kr($75\%:25\%$) mixed gas, the turn-on voltage of Al/cell decreased to about 7 V.

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References

  1. M. Pope, H. P. Kallmann, and P. Magnate, 'Electroluminescence in organic crystals', J. Chem. Phys. 38, Vol 38, Iss. 8, p. 2042, 1963
  2. C. W. Tang and S. Al. Vanslyke, 'Organic electroluminescent diodes', Appl. Phys. Lett. Vol. 51, Iss. 12, p. 913, 1987
  3. Y. Cao, G. Yu, C. Zhang, R. Menon, and A. J. Heeger, 'Polymer ligh-emitting diodes with polyethylene dioxythiophene-polystyren e sulfonate as the transparent anode', Synth. Metals, Vol. 87, Iss. 2, p. 171, 1997
  4. S. A. Carter, M. Angelopoulos, S. Karg, P. J. Brock, and J. C scott, 'Polymeric anodes for improved polymer light-emitting diode performance', Appl. Phys. Lett. 70, Vol. 70, No. 16, p. 2067, 1997
  5. R. Glang, 'Vacuum Evaporation', in L. I. Maissel and R. Glang(eds) Handbook of Thin Film Technology, Chap. 1, p. 1, 1970
  6. K. Tominaga, T. Ueda, T. Ao, A. Katkoka, and I. Mori, 'ITO films prepared by facing target sputtering system', Thin Solid Films, Vol. 281-282, Iss. 1-2, p. 194, 1996
  7. 금민종, 김경환, '대향타켓스퍼터링법에 의한 FBAR용 AZO(ZnO:Al) 박막의 제작', 전기전자재료학회논문지, 17권,4호, p. 442, 2004
  8. 금민종, 손인환, 최명규, 추순남, 최형욱, 신영화, 김경환, 'FBAR용 ZnO/$SiO_2$/Si 박막의 결정학적 특성에 관한 연구', 전기전자재료학회 논문지, 16권,8호, p. 711, 2003
  9. P. K. Song, Y. Shigesato, M. Kamei, and I. Yasui, 'Electrical and structural properties of tin-doped oxide films deposited by DC sputtering at room temperature', Appl. Phys., Vol. 38, p. 2921, 1999
  10. N. Matsushita, K. Noma, S. Nakagawa, and M. Naoe, 'Plasma diagnosis and low-substrate-temperature deposition of Ba ferrite films in a damage-free sputtering apparatus with mixed gases', Vacuum. 51, 4, p. 543, 1998