• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.23 no.10
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• pp.776-781
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• 2010

CdSe films were deposited on glass substrates (CdSe/glass) by thermal evaporation. Substrate temperature was lowered by cooling substrate holder with liquid nitrogen. Substrate temperatures were $200^{\circ}C$, $0^{\circ}C$ and $-40^{\circ}C$. The crystallographic properties and surface morphologies of the CdSe/glass films were studied by X-ray diffraction (XRD) and scanning electron microscopy (SEM). The optical and electrical properties of the films were investigated by dependence of energy gap, photosensitivity and resistivity on the substrate temperature. CdSe/glass showed energy gap of ~1.72 eV regardless of substrate temperature. The resistivity of the films decreased to $0.5{\Omega}cm$ by lowering the substrate temperature to $-40^{\circ}C$. The CdSe/glass films prepared at $0^{\circ}C$ showed the highest photosensitivity among the films in this study.

• Korean Journal of Materials Research
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• v.13 no.12
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• pp.831-838
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• 2003

Anisotropic mesophase carbon fiber(AMCFs) was exposed to isothermal oxidation in air and $CO_2$atmosphere, and burn-off rates have measured by TGA. The microstructure changes of oxidized carbon fibers, were observed by SEM. It was observed that oxidation rate in the air is over 100 times faster than that in $CO_2$atmosphere. The activation energy obtained in air was about 43.4 Kcal/mole in the temperature range of $600∼800^{\circ}C$, and in $CO_2$was about 55.2 Kcal/mole in the temperature range of $950∼1200^{\circ}C$. Therefore, the oxidation reaction in both atmospheres was under chemical reaction regime in the above temperature ranges. It was shown that the oxidation of the AMCFs is initiated at the end of fibers at high temperature($1100^{\circ}C$) with developing the large pores, and the small pores are developed on the fiber surface at low temperature($900^{\circ}C$). In conclusion, the oxidation of the AMCFs is progressed through the imperfection.

• Proceedings of the KIEE Conference
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• 1994.11a
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• pp.293-295
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• 1994

Barium Titanate ($BaTiO_3$) is one of the few titanateds which is cubic at room temperature. It has the perovskite structure, high dielectric constant (${\varepsilon}_r=300$) and a small temperature coefficient of resistance due to it's Low transition temperature ($Tc=120^{\circ}c$). PTCR (Positive Temperature Coefficient of Resistivity) thermistor in thin film $BaTiO_3$ system was prepared by using radio frequency (13.56MHz) and BC magnetron sputter equipment. Polycrystalline, and surface structure characteristics of the specimens were measured by X-ray diffraction (D-Max3, Rigaku, Japan), SEM(Scanning Electron Microscopy: M. JSM84 01, Japan), respectively. Temperature at below $600^{\circ}C$, $1000^{\circ}C$ to $700^{\circ}C$, and above $1100^{\circ}C$ for spotted $BaTiO_3$ thin films showed the amorphous, degree of crystal growth, and polycrystalline, respectively.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.50 no.2
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• pp.49-56
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• 2001

Diamond thin films have been deposited on the silicon substrate by inductively coupled radio frequency plasma enhanced chemical vapor deposition system. The morphological features of thin films depending on methane concentration and deposition time have been studied by scanning electron microscopy and Raman spectroscopy. The diamond particles deposited uniformly on silicon substrate($10{\times}10[mm^2]$) at the pressure of 1[torr], a methane concentration of 1[%], a hydrogen flow rate of 60[sccm], a substrate temperature of $840\{sim}870[^{\circ}C]$, an input power of 1[kw], and a deposition time of 1[hour]. With increasing deposition time, the diamond particles grew, and than about 3 hours have passed, the graphitic phase carbon thin film with "cauliflower-like" morphology deposited on the diamond thin films.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.753-756
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• 2001

This research made a study of MnO$_2$electrode for supercapacitor with a diffuser (Polyvinyl alcohol). Manganese dioxide was used as active material. We tried to increase specific surface area by adding PVA. Manganese dioxide was synthesized by a sol-gel method using fumaric acid and oxalic acid in low temperature with high yield. Therefore, We prepared Manganese dioxide powder. This powder was used by active materials. The electrode was made by a mixture of active material, ketjen-black which is a large specific surface area, and PVdF-co-HFP as binder agent with using Nickel mesh as current collector. Here we reported on the synthesis and electrochemical performance of a enhanced material. All active materials have been submitted to X-ray diffraction and Scanning electron microscopy.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.11a
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• pp.290-291
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• 2006

We prepared the multilayer with Al doped ZnO (AZO)/Ag/AZO structure. The multilayer were deposited with various thickness of Ag layer on glass substrates at room temperature by using facing targets sputtering (FTS) method. To investigate the electrical, optical and structural properties, we used Hall Effect measurement system, four-point probes. UV-VIS spectrometer with a wavelength of 300 - 100nm, X-ray Diffractometer(XRD) and scanning electron microscopy (SEM). We obtained multilayer thin film with the low resistivity $5,9{\times}10^{-5}{\Omega}cm$ and the average transmittance of 86% m the visible range (400 - 800nm).

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.281-281
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• 2010

In this study, ZnO nanorod arrays are grown on organic substrates by hydrothermal method which requires a low temperature, simple process, and no vacuum. The structure properties of ZnO nanorods were examined by field emission scanning electron microscopy and X-ray diffraction. To detect the optical transmission, ultraviolet visible spectrophotometer was also used. From results, the ZnO nanorods were grown the horizontal growth on the organic substrates had the length of over $10\;{\mu}m$. After deposition of ZnO seed layer, the ZnO nanorod arrays had uniformity orientation and length.

• Journal of the Optical Society of Korea
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• v.20 no.1
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• pp.125-129
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• 2016

In this study, we have investigated a high-temperature AlN nucleation layer and AlGaN epilayers on c-plane sapphire substrate by low-pressure metal-organic chemical vapor deposition (LP-MOCVD). High resolution X-ray diffraction (HRXRD), atomic force microscopy (AFM), scanning electron microscope (SEM) and Raman scattering measurements have been exploited to study the crystal quality, surface morphology, and residual strain of the HT-AlN nucleation layer. These analyses reveal that the insertion of an LT-AlN nucleation layer can improve the crystal quality, smooth the surface morphology of the HT-AlN nucleation layer and further reduce the threading dislocation density of AlGaN epifilms. The mechanism of inserting an LT-AlN nucleation layer to enhance the optical properties of HT-AlN nucleation layer and AlGaN epifilm are discussed from the viewpoint of driving force of reaction in this paper.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1988.05a
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• pp.52-55
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• 1988

Tunsten silicide (WSix) films on polycrystalline silicon were formed by low-pressure chemical vapor deposition (LPCVD) and were annealed in $N_2$ for 30 mins at various temperatures. The annealing behaviors of tungsten silicide films have been investigated by electrical resistivity measurements, X-ray diffraction methods, scanning electron microscopy (SEM) and Hall measurements. The electrical resistivity decreased almost linearly with increasing annealing temperature and reached $35{\mu}{\Omega}-cm$ at $1000^{\circ}C$ annealing. The X-ray and SEM analyses indicate that crystallization of $WSi_2$ and grain growth occurs when annealed above $1000^{\circ}C$. Excess silicon redistribution occurs considerably when annealed above $1000^{\circ}C$. By Hall measurements, the carrier type for specimens annealed at $1000^{\circ}C$ was found to be positive holes, while the carriers were electrons in the specimens that were annealed at $800^{\circ}C$.

• Korea-Australia Rheology Journal
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• v.19 no.2
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• pp.81-88
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• 2007

Blends of collagen dispersion (COL) with poly(vinyl alcohol) (PVA) in different weight ratios were investigated by oscillatory rheometry, Fourier transform-infrared spectroscopy and scanning electron microscopy. It was found that even with 80% of PVA, the COL/PVA blends behaved more like collagen dispersion than pure PVA solution in the dynamic thermal and frequency processing, for instance, a dominant elastic appearance (G'>G"), a similar shear thinning behavior and the thermal denaturation below $40^{\circ}C$. However, influence on the blend behaviour by PVA was noticeable, for instance, an increase of dynamic denaturation temperature, the decreasing intensity of amide I, II and III bands as well as the diminishing irregular pores on the surface of blends. The interaction between collagen and PVA could be observed, especially at the regions with low content or high content of PVA.