Journal of the Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회논문지)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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The Structural and Electrical Properties of CdSe Films Deposited at Low Temperature

저온에서 증착한 CdSe막의 구조적 및 전기적 특성

  • Park, Ki-Cheol (Department of Semiconductor Engineering and ERI, Gyeongsang National University) ;
  • Ma, Tae-Young (Department of Electrical Engineering and ERI, Gyeongsang Nnational University)
  • Received : 2010.06.15
  • Accepted : 2010.09.09
  • Published : 2010.10.01
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Abstract

CdSe films were deposited on glass substrates (CdSe/glass) by thermal evaporation. Substrate temperature was lowered by cooling substrate holder with liquid nitrogen. Substrate temperatures were $200^{\circ}C$, $0^{\circ}C$ and $-40^{\circ}C$. The crystallographic properties and surface morphologies of the CdSe/glass films were studied by X-ray diffraction (XRD) and scanning electron microscopy (SEM). The optical and electrical properties of the films were investigated by dependence of energy gap, photosensitivity and resistivity on the substrate temperature. CdSe/glass showed energy gap of ~1.72 eV regardless of substrate temperature. The resistivity of the films decreased to $0.5{\Omega}cm$ by lowering the substrate temperature to $-40^{\circ}C$. The CdSe/glass films prepared at $0^{\circ}C$ showed the highest photosensitivity among the films in this study.

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References

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