• 제목/요약/키워드: low current

검색결과 9,992건 처리시간 0.041초

A Novel Switching Mode for High Power Factor Correction and Low THD

  • Park, Gyumin;Eum, Hyunchul;Yang, Seunguk;Hwang, Minha;Park, Inki
    • 전력전자학회:학술대회논문집
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    • 전력전자학회 2018년도 전력전자학술대회
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    • pp.210-212
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    • 2018
  • A new switching mode has been proposed to obtain high power factor and low THD in single stage AC-DC converter. The conventional voltage mode control in critical conduction mode distorts input current shape with poor THD in flyback topology. Once TRIAC dimmer is connected, visible flicker in the LED lamp is easily detected due to a lack of TRAIC holding current near the input voltage zero cross. The newly proposed method can shape the input current by providing a desired reference voltage so that low THD is obtained by ideal sinusoidal input current in case of no dimmer connection and flat input current performs good TRIAC dimmer compatibility in phase-cut dimming condition. To confirm the validity of the proposed method, theoretical analysis and experimental result from 8W dimmable LED lighting system are presented.

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강압 트랜스를 이용하지 않은 3상 저전압 다이오드 정류회로 (Three-phase Low Voltage Diode Rectifier Circuit not using a Step-Down Transformer)

  • 문상필;서기영;이현우;김영문;강욱중
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 2001년도 추계학술대회 논문집 전기기기 및 에너지변환시스템부문
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    • pp.215-218
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    • 2001
  • In conventional three-phase rectifiers, it was necessary to use a transformer to obtain low output voltage. In this paper, we propose a new three-phase rectifiers circuit that achieves low voltage by using a very simple circuit configuration that does not have a transformer and does not need any complex control. We also describe the operation principle of the proposed circuit, and derive a theoretical formula for its current waveform. On the basis of this formula it also explores the theoretical input/output current characteristics, theoretical current amplification factor, and theoretical output voltage characteristics of these theoretical values with experimentally obtained input/output current characteristics, current amplification factor, and output voltage characteristics, allowed us to confirm the soundness of our theoretical analyses.

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High Performance and Low Cost Single Switch Current-fed Energy Recovery Circuits for AC Plasma Display Panels

  • Han Sang-Kyoo;Youn Myung-Joong
    • Journal of Power Electronics
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    • 제6권3호
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    • pp.253-263
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    • 2006
  • A high performance and low cost single switch current fed energy recovery circuit (ERC) for an alternating current (AC) plasma display panel (PDP) is proposed. Since it is composed of only one power switch compared with the conventional circuit consisting of four power switches and two large energy recovery capacitors, the ERC features a simpler structure and lower cost. Furthermore, since all power switches can be switched under soft switching operating conditions, the proposed circuit has desirable merits such as increased reliability and low switching loss. Specifically, there are no serious voltage notches across the PDP with the aid of gas discharge current compensation, which can greatly reduce the current stress of all inverter switches, and provide those switches with the turn on timing margin. To confirm the validity of proposed circuit, its operation and performance were verified on a prototype for 7-inch test PDP.

저압 직류 배전용 양극성 DC-DC 컨버터에 관한 연구 (A Study on Bipolar DC-DC Converter for Low Voltage Direct Current Distribution)

  • 이정용;김호성;조진태;김주용;조영훈
    • 전력전자학회논문지
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    • 제24권4호
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    • pp.229-236
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    • 2019
  • This study proposes a DC-DC converter topology of solid-state transformer for low-voltage DC distribution. The proposed topology consists of a voltage balancer and bipolar DC-DC converter. The voltage and current equations are obtained on the basis of switching states to design the controller. The open-loop gain of the controller is achieved using the derived voltage and current equations. The controller gain is selected through the frequency analysis of the loop gain. The inductance and capacitance are calculated considering the voltage and current ripples. The prototype is fabricated in accordance with the designed system parameters. The proposed topology and designed controller are verified through simulation and experiment.

저전압 저전력 듀얼 모드 CMOS 전류원 (Dual-mode CMOS Current Reference for Low-Voltage Low-Power)

  • 이근호
    • 한국정보통신학회논문지
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    • 제14권4호
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    • pp.917-922
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    • 2010
  • 본 논문에서는 혼성모드 집적회로에서 이용 가능한 저전력 듀얼모드 CMOS 전류원 회로를 제안한다. MOS 소자의 전자이동도가 온도변화에 반비례하는 음의 온도계수 생성회로와 비례하는 양의 온도계수 생성회로의 합을 통해 변화하는 외부 온도에 독립적인 특성을 갖는 방식을 이용하였다. 특히, 두 개 이상의 출력을 얻어낼 수 있는 듀얼 출력단을 통해 정전류원을 얻을 수 있었다. 전류 분배를 통해 얻을 수 있는 듀얼모드 출력 전류값을 통해 차동 입출력 구조의 소자 및 필터 설계 등 아날로그 회로 영역에서 응용가능하며, 더불어 다양한 서브 블록 시스템 동작에 활용할 수 있는 유용한 특성을 지니고 있다. 저전압 저전력 특성을 보유하고 있는 제안된 전류원 회로는 2V 공급 전압하에서 0.84mW의 전력 소모값을 나타내었으며, 최종 출력값은 각각 $0.38{\mu}A/^{\circ}C$$0.39{\mu}A/^{\circ}C$의 변화율을 보여주었다. 제안된 회로는 $0.18{\mu}m$ n-well CMOS 공정을 이용하여 hspice 시뮬레이션 하였다.

새로운 상호결합 이득증가형 적분기를 이용한 1.8V 200MHz대역 CMOS 전류모드 저역통과 능동필터 설계 (Design of A 1.8V 200MHz band CMOS Current-mode Lowpass Active Filter with A New Cross-coupled Gain-boosting Integrator)

  • 방준호
    • 전기학회논문지
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    • 제57권7호
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    • pp.1254-1259
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    • 2008
  • A new CMOS current-mode integrator for low-voltage analog integrated circuit design is presented. The proposed current-mode integrator is based on cross-coupled gain-boosting topology. When it is compared with that of the typical current-mirror type current-mode integrator, the proposed current-mode integrator achieves high current gain and unity gain frequency with the same transistor size. As a application circuit of the proposed integrator, we designed the 1.8V 200MHz band current-mode lowpass filter. These are verified by Hspice simulation using $0.18{\mu}m$ CMOS technology.

저 전력 MOS 전류모드 논리회로 설계 (Design of a Low-Power MOS Current-Mode Logic Circuit)

  • 김정범
    • 정보처리학회논문지A
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    • 제17A권3호
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    • pp.121-126
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    • 2010
  • 본 논문에서는 저 전압 스윙 기술을 적용하여 저 전력 회로를 구현하고, 슬립 트랜지스터 (sleep-transistor)를 이용하여 누설전류를 최소화하는 새로운 저 전력 MOS 전류모드 논리회로 (MOS current-mode logic circuit)를 제안하였다. 제안한 회로는 저 전압 스윙 기술을 적용하여 저 전력 특성을 갖도록 설계하였고 고 문턱전압 PMOS 트랜지스터 (high-threshold voltage PMOS transistor)를 슬립 트랜지스터로 사용하여 누설전류를 최소화하였다. 제안한 회로는 $16\;{\times}\;16$ 비트 병렬 곱셈기에 적용하여 타당성을 입증하였다. 이 회로는 슬립모드에서 기존 MOS 전류 모드 논리회로 구조에 비해 대기전력소모가 1/104로 감소하였으며, 정상 동작모드에서 11.7 %의 전력소모 감소효과가 있었으며 전력소모와 지연시간의 곱에서 15.1 %의 성능향상이 있었다. 이 회로는 삼성 $0.18\;{\mu}m$ CMOS 공정을 이용하여 설계하였으며, HSPICE를 통하여 검증하였다.

해상 데이터 통신을 위한 저전력 전류모드 신호처리 (Low Power Current mode Signal Processing for Maritime data Communication)

  • 김성권;조승일;조주필;양충모;차재상
    • 한국인터넷방송통신학회논문지
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    • 제8권4호
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    • pp.89-95
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    • 2008
  • 해상통신에서 운용되는 OFDM (Orthogonal Frequency Division Multiplexing)통신 단말기는 긴급재난시에도 동작하여야 하므로, 저전력으로 동작하여야 한다. 따라서 Digital Signal Processing (DSP) 동작하는 전압모드 Processor보다 저전력 동작이 가능한 전류모드 FFT (Fast-Fourier-Transform) Processor의 설계가 필요하게 되었다. IVC (Current-to-Voltage Converter)는 전류모드 FFT Processor의 출력 전류를 전압 신호로 바꾸는 디바이스로써, 저전력 OFDM 단말기 동작을 위해 IVC의 전력 손실은 낮아야 하고, FFT의 출력 전류가 전압신호에 대응이 될 수 있도록 넓은 선형적인 동작구간을 가져야 하며, 향후, FFT LSI와 IVC가 한 개의 칩으로 결합되는 것을 고려하면, 작은 크기의 chip size로 설계되어야 한다. 본 논문에서는 선형 동작 구간이 넓은 새로운 IVC를 제안한다. 시뮬레이션 결과, 제안된 IVC는 전류모드 FFT Processor의 출력 범위인 -100 ~100[uA]에서 0.85V~1.4V의 선형동작구간을 갖게 됨을 확인하였다. 제안된 IVC는 전류모드 FFT Processor와 더불어 OFDM을 이용한 저전력 해상 데이터통신 실현을 위한 선도 기술로 유용할 것이다.

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Effect of the Plasma-assisted Patterning of the Organic Layers on the Performance of Organic Light-emitting Diodes

  • Hong, Yong-Taek;Yang, Ji-Hoon;Kwak, Jeong-Hun;Lee, Chang-Hee
    • Journal of Information Display
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    • 제10권3호
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    • pp.111-116
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    • 2009
  • In this paper, a plasma-assisted patterning method for the organic layers of organic light-emitting diodes (OLEDs) and its effect on the OLED performances are reported. Oxygen plasma was used to etch the organic layers, using the top electrode consisting of lithium fluoride and aluminum as an etching mask. Although the current flow at low voltages increased for the etched OLEDs, there was no significant degradation of the OLED efficiency and lifetime in comparison with the conventional OLEDs. Therefore, this method can be used to reduce the ohmic voltage drop along the common top electrodes by connecting the top electrode with highly conductive bus lines after the common organic layers on the bus lines are etched by plasma. To further analyze the current increase at low voltages, the plasma patterning effect on the OLED performance was investigated by changing the device sizes, especially in one direction, and by changing the etching depth in the vertical direction of the device. It was found that the current flow increase at low voltages was not proportional to the device sizes, indicating that the current flow increase does not come from the leakage current along the etched sides. In the etching depth experiment, the current flow at low voltages did not increase when the etching process was stopped in the middle of the hole transport layer. This means that the current flow increase at low voltages is closely related to the modification of the hole injection layer, and thus, to the modification of the interface between the hole injection layer and the bottom electrode.

낮은 최고전류밀도 조건에서 파형전류전해에 의한 Pb-Sn합금 전착층의 조성 및 조작특성 (Composition and microstructure of Pb-Sn alloy electrodeposits in pulse plating with low peak current density)

  • 예길촌;백민석
    • 한국표면공학회지
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    • 제24권2호
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    • pp.88-95
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    • 1991
  • The tin-lead alloy was electrodeposited in the low range of peak current density in order to investigate the change of composition and microstructure of them. The Pb content of alloy deposits, which was decreased with increasing average current density, was relatively lower than that of D.C. plated alloy deposit. The preferred orientation of alloy deposit was changed with increasing peak current density and the surface morphology of alloy deposits was closely related to the preferred orientation of them.

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