• KIEAE Journal
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• 제1권2호
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• pp.47-54
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• 2001

Single sound absorbers such as porous materials, panels, and Helmholts resonators have limited performance with some extents of frequency region. For example, porous materials do not attenuate low frequency sounds, while panels do not absorb high frequency sounds. Composite absorption structure with coverings, porous materials, and air gaps are an alternative for wide band sound absorption. Slits, panels, perforated panels are those materials for coverings, glass wool, mineral wool, polyester, and polyurethane are frequently used porous materials. Air gap between the porous material and background surface is one of major factors which governs the absorption characteristics of composite absorption structures, especially in the low frequency area. Calculations and measurements show that the absorption coefficients of composite absorption structure, in mid and low frequency bands, are getting higher with increased air gaps. Perforated panels rather than slits and panels are good coverings with higher number as far as absorption coefficient is concerned. Perforated panels with porous materials and 37 cm of air gaps in background have high absorption coefficients for all frequency bands, above 0.7 to 1.0. All measurements are performed in reverberation chamber, Mokpo National University, according to ISO 354 and ISO 3382.

• 한국재료학회지
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• 제30권4호
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• pp.211-216
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• 2020

Amorphous In-Ga-Zn-O (a-IGZO) thin film transistors, because of their relatively low mobility, have limits in attempts to fulfill high-end specifications for display backplanes. In-Zn-O (IZO) is a promising semiconductor material for high mobility device applications with excellent transparency to visible light region and low temperature process capability. In this paper, the effects of working pressure on the physical and electrical properties of IZO films and thin film transistors are investigated. The working pressure is modulated from 2 mTorr to 5 mTorr, whereas the other process conditions are fixed. As the working pressure increases, the extracted optical band gap of IZO films gradually decreases. Absorption coefficient spectra indicate that subgap states increase at high working pressure. Furthermore, IZO film fabricated at low working pressure shows smoother surface morphology. As a result, IZO thin film transistors with optimum conditions exhibit excellent switching characteristics with high mobility (≥ 30㎠/Vs) and large on/off ratio.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.364.2-364.2
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• 2014

Magnesium oxide (MgO) thin films have attracted great scientific and technological interest in recent decades. Because of its distinguished properties such as a wide band gap (7.2 eV), a low dielectric constant (9.8), a low refractive index, an excellent chemical, and thermal stability (melting point=$2900^{\circ}C$), it is widely used as inorganic material in diverse areas such as fire resistant construction materials, optical materials, protective layers in plasma display panels, buffer layers of multilayer electronic/photonic devices, and perovskite ferroelectric thin films. Precursor used in the ALD requires volatility, stability, and low deposition temperature. Precursors using a heteroleptic ligands with different reactivity have advantage of selective reaction of the heteroleptic ligands on substrate during ALD process. In this study, we have synethesized new heteroleptic magnesium precursors ${\beta}$-diketonate and aminoalkoxide which have been widely used for the development of precursor because of the excellent volatility, chelating effects by increasing the coordination number of the metal, and advantages to synthesize a single precursor. A newly-synthesized Mg(II) precursor was adopted for growing MgO thin films using ALD.

• 한국반도체및디스플레이장비학회:학술대회논문집
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• 한국반도체및디스플레이장비학회 2003년도 추계학술대회 발표 논문집
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• pp.117-121
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• 2003

In this paper, a micromachined low-loss and ultra wide band reflection-type phase shifter (RTPS) is proposed. The phase shifter shows a constant phase shift from 5 to 17 GHz and consists of two cascaded reflection-type phase shifter. Low-loss reflection termination consists of digital capacitive switches, and air-gap overlay CPW couplers are used in order to employ the low-loss 3 dB coupling. The fabricated phase shifter showed the 5 discrete states, $0^{\circ},{\;}22.5^{\circ},{\;}45^{\circ},{\;}67.5^{\circ},{\;}90^{\circ}$ respectively, the average insertion loss of 3.48 dB, and maximum rms phase error of ${\pm}1.80^{\circ}$ for the relative phase shift from $0^{\circ}{\;}to{\;}90^{\circ}$ over 5-17 GHz.

• Tribology and Lubricants
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• 제35권5호
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• pp.317-322
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• 2019

In spite of progress in tribological research, machine component failure due to friction and wear has been reported frequently. This failure may lead to secondary damage that can cause huge expense for maintenance and repair. To prevent economic loss, it is important to detect and predict the initial failure point. In this sense, various researchers have been tried to develop Condition Monitoring (CM) method using Acoustic Emission (AE) generated while the materials undergo failure. In this study, effect of particles on friction and wear was investigated using the pin-on-plate friction test and AE signal was recorded with a band-width type AE sensor. The experiments were performed in dry and lubricant conditions using steel and glass as specimens. After the experiment, 3D laser microscope image was captured to evaluate the wear behavior quantitatively. The AE signal was analyzed in time-domain and frequency-domain. The amplitude was compared with the frictional results. The results of this study showed that particle generation accelerate wear, generate high magnitude AE signal and change the frequency characteristics of the signal. Also, lubricant condition test results showed low coefficient of friction, low wear rate, and low magnitude of AE signal compared to the dry condition. It is expected that the results of this study will aid in better assessment of wear in CM technology

• 대한금속재료학회지
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• 제48권5호
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• pp.449-455
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• 2010

To enhance the efficiency of dye sensitized solar cells, we proposed crystalline anatase-$TiO_{2}$ by using a low temperature process ($150^{\circ}C{\sim}250^{\circ}C$). We successfully fabricated 30 nm-$TiO_{2}$ at a fixed atomic layer deposition condition of 1.0 sec of TDMAT pulse, 20 sec of TDMAT purge, 0.5 sec of H$_{2}$O pulse, and 20 sec of H$_{2}$O purge. In order to examine the microstructure, phase, and band-gap of the TiO$_{2}$ respectively, we employed a Nano-Spec, transmission electron microscope, high resolution XRD, Auger electron spectroscopy, scanning probe microscope, and UV-VIS-NIR. We were able to fabricate a crystalline anatase-phase of 30 nm-TiO$_{2}$ successfully at temperatures above $180^{\circ}C$. Our results showed that our proposed low temperature ALD process (below $200^{\circ}C$) might be applicable to glass and flexible polymer substrates.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 추계학술대회 논문집
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• pp.63-63
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• 2009

Many researchers have been studied as active and transparent electrode using ZnO (Zinc oxide) inorganic semiconductor material due to their good properties such as wide band-gap and high electrical properties compared with amorphous-Si. In this study, we fabricated ZnO films by the RF magnetron sputtering method at a low temperature for a channel layer in thin-film transistor (TFT) and investigated the characteristics of sputtered ZnO films. Also, the electrical properties of TFT using ZnO channel layer such as field effect mobility(${\mu}$), threshold voltage ($V_{th}$), and $I_{on/off}$ ratio are investigated for the application of the display and electronic devices.

• Bulletin of the Korean Chemical Society
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• 제31권7호
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• pp.2073-2076
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• 2010

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2005년도 추계종합학술대회
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• pp.825-828
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• 2005

In this paper, we propose a new nonvolatile unit memory cell and proposal peripheral circuit using the polymer material. Memory that relies on bistable behavior- having tow states associated with different resistances at the same applied voltage - has attracted much interest because of its nonvolatile properties. Such memory may also have other merits, including simplicity of structure and manufacturing, and the small size of memory cells. We have plotted the load line graphs for the use of a polymer memory character, hence we have designed in the band-gap reference shape of a write/erase drive, and then designed in the 2-stage differential amplifier shape of a sense amplifier in the consideration of a low current characteristic of a polymer memory cell. The simulation result shows that is has high gain about 80dB by sensing the very small current.

• 한국전기전자재료학회논문지
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• 제25권2호
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• pp.140-146
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• 2012

A variety of dyes are commercially available today, there is an ongoing need for new chromophoric systems and low-band-gap materials. For example, near-infrared (NIR) emission has received increased attention for applications in bioassays and medicine while NIR absorption is demanded for laser-welding of plastics or efficient blocking of heat rays. Most of the commercially available NIR materials are not suitable for such purposes owing to their insufficient stability. We have developed a novel NIR-absorbing polyaromatic dye. By extending the system of perylenebis(dicarboximide)s along the molecular long axis, we have obtained the higher homologue pentarylenebis(dicarboximide). We have tried to introduce imide functional group to pentarylene in order to increase chemical and thermal stability.