• 한국건축시공학회지
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• 제12권5호
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• pp.503-509
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• 2012

In this study, the potential use of indigenous natural loess(Hwangtoh) as a new construction material, via alkali activation in conjunction with microwave heating, was investigated. Hwangtoh pastes with three different mix proportions of varying alkali liquid concentrations at a constant liquid-to-Hwangtoh ratio of 0.55 were prepared. Through the investigation it was found that it is possible to prepare Hwangtoh paste with $19.02N/mm^2$ at the age of 4 hours with the alkali solution of 8M NaOH and 1:4.5 mass ratio of liquefied $Na_2SiO_3$ at the curing temperature of $60^{\circ}C$ by microwave heating. The strength development at early age of the alkali activated Hwangtoh paste specimens may be attributed to both a higher rate of reaction and moisture evaporation due to microwave heating.

• 한국분말야금학회:학술대회논문집
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• 한국분말야금학회 2006년도 Extended Abstracts of 2006 POWDER METALLURGY World Congress Part 1
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• pp.150-151
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• 2006

Laser pyrolysis is a very suitable method for the synthesis of a wide range of nanoparticles. A pilot unit based on this process has been recently developed at CEA. This paper reports results showing the possibility to produce SiC and $TiO_2$ nanoparticles at rates of respectively 1 and 0.2 kg/h and also the possibility to adjust the mean grain size of the particles and their structure by changing the laser intensity and reactants flow rates. First tests of liquid recovery have been also successfully performed to limit the risks of nanoparticles dissemination in the environement during their recovery.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 추계학술대회 논문집
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• pp.278-278
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• 2009

A photovoltaic device consisting of arrays of radial p-n junction wires enables a decoupling of the requirements for light absorption and carrier extraction into orthogonal spatial directions. Each individual p-n junction wire in the cell is long in the direction of incident light, allowing for effective light absorption, but thin in orthogonal direction, allowing for effective carrier collection. To fabricate radial p-n junction solar cells, p or n-type vertical Si wire cores need to be produced. The majority of Si wires are produced by the vapor-liquid-solid (VLS) method. But contamination of the Si wires by metallic impurities such as Au, which is used for metal catalyst in the VLS technique, results in reduction of conversion efficiency of solar cells. To overcome impurity issue, top-down methods like noble metal catalytic etching is an excellent candidate. We used noble metal catalytic etching methods to make Si wire arrays. The used noble metal is two; Au and Pt. The method is noble metal deposition on photolithographycally defined Si surface by sputtering and then etching in various BOE and $H_2O_2$ solutions. The Si substrates were p-type ($10{\sim}20ohm{\cdot}cm$). The areas that noble metal was not deposited due to photo resist covering were not etched in noble metal catalytic etching. The Si wires of several tens of ${\mu}m$ in height were formed in uncovered areas by photo resist. The side surface of Si wires was very rough. When the distance of Si wires is longer than diameter of that Si nanowires are formed between Si wires. Theses Si nanowires can be removed by immersing the specimen in KOH solution. The optimum noble metal thickness exists for Si wires fabrication. The thicker or the thinner noble metal than the optimum thickness could not show well defined Si wire arrays. The solution composition observed in the highest etching rate was BOE(16.3ml)/$H_2O_2$(0.44M) in Au assisted chemical etching method. The morphology difference was compared between Au and Pt metal assisted chemical etching. The efficiencies of radial p-n junction solar Cells made of the Si wire arrays were also measured.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제50권4호
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• pp.161-168
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• 2001

Organic thin film transitors(TFTs) are of interest for use in broad area electronic applications. For example, in active matrix liquid crystal displays(AMLCDs), organic TFTs would allow the use of inexpensive, light-weight, flexible, and mechanically rugged plastic substrates as an alternative to the glass substrates needed for commonly used hydrogenated amorphous silicon(a-Si:H). Recently pentacene TFTs with carrier field effect, mobility as large as 2 $cm^2V^{-1}s^{-1}$ have been reported for TFTs fabricated on silicon substrates, and it is higher than that of a-Si:H. But these TFTs are fabricated on silicon wafer and $SiO_2$ was used as a gate insulator. $SiO_2$ deposition process requires a high insulator which is polyimide and photo acryl. We investigated trasfer and output characteristics of the thin film transistors having active layer of pentacene. We calculated field effect mobility and on/off ratio from transfer characteristics of pentacene thin film transistor, and measured IR absorption spectrum of polymide used as the gate dielectric layer. It was found that using the photo acryl as a gate insulator, threshold voltage decreased from -12.5 V to -7 V, field effect mobility increased from 0.012 $cm^2V^{-1}s^{-1}$ to 0.039 $cm^2V^{-1}s^{-1}$ , and on/off current ratio increased from $10^5\;to\;10^6$. It seems that TFTs using photo acryl gate insulator is apt to form channel than TFTs using polyimide gate insulator.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.429.2-429.2
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• 2014

ZnO nanowire is known as synthesizable and good mechanical properties. And, stimuli-responsive polymer is widely used in the application of tunable sensing device. So, we combined these characteristics to make precise tunable sensing devise. In this work, we investigate the dependence of ZnO nanowire alignment and morphology on si substrate using nanosphere template with various conditions via hydrothermal process. Also, pH-temperature dependant tuning ability of nanostructure was studied. The brief experimental scheme is as follow. First, Zno seed layer was coated on a si wafer ($20{\times}20mm$) by spin coater. And then $1.15{\mu}m$ sized close-packed PS nanospheres were formed on a cleaned si substrate by using gas-liquid-solid interfacial self-assembly method. After that, zinc oxide nanowires were synthesized using hydrothermal method. Before the wire growth, to specify the growth site, heat treatment was performed. Finally, NIPAM(N-Isopropylacrylamide) was coated onto as-fabricated nanostructure and irradiated by UV light to form the PNIPAM network. The morphology, structures and optical properties are investigated by FE-SEM(Field Emission Scanning electron Microscopy), XRD(X-ray diffraction), OM(Optical microscopy), and WCA(water contact angle).

• 공업화학
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• 제10권8호
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• pp.1186-1191
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• 1999

고분자 화합물의 첨가제로서 개질제, 물성 향상제, 충진제, 강화제 등의 용도로 사용되고 있는 유리 중공구체를 혼합액상 전구체를 사용하여 제조하였다. 혼합액상 전구체는 40% 규산나트륨($Na_2O:SiO_2$= 1:2) 수용액에 불용제인 붕산과 팽창제인 요소를 혼합한 용액이며, 이 용액을 오븐에 건조시킨 후, 볼밀로 분쇄시켜 기체 화염로에 투입될 원료 입자를 제조하였다. 유리 중공구체의 물성에 영향을 미치는 인자로서는 로에 투입될 원료 입자의 크기($53{\sim}63{\mu}m$, $63{\sim}180{\mu}m$)와 로 내부의 온도($800{\sim}1200^{\circ}C$), 그리고 요소의 변화량(0~30 g)을 택하여 실험하였으며, 실험 결과 유리 중공구체의 평균 입경은 원료 입자의 크기가 작을수록, 로 내부의 온도가 클수록, 그리고 요소의 조성이 증가할수록 증가하는 결과를 보여 주었다. 또한, 유리 중공구체의 파쇄 강도는 요소의 양이 증가할수록 감소하는 경향을 나타내었다.

• Computers and Concrete
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• 제21권3호
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• pp.311-319
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• 2018

This study used a volumetric method for design. The control group used waste Liquid Crystal Displayplay (LCD) glass powder to replace cement (0%, 10%, 20%, 30%), and the PZT group used Pd-Zr-Ti piezoelectric (PZT) powder to replace 5% of the fine aggregate to make cement mortar. The engineering and the mechanical and electricity properties were tested; flow, compressive strength, ultrasonic pulse velocity (UPV), water absorption and resistivity (SSD and OD electricity at 50 V and 100 V) were determined; and the correlations were determined by linear regression. The compressive strength of the control group (29.5-31.8 MPa) was higher than that of the PZT group (25.1-29 MPa) by 2.8-4.4 MPa at the curing age of 28 days. A 20% waste LCD glass powder replacement (31.8 MPa) can fill up finer pores and accelerate hydration. The control group had a higher 50 V-SSD resistivity ($1870-3244{\Omega}.cm$), and the PZT group had a lower resistivity ($1419-3013{\Omega}.cm$), meaning that the resistivity increases with the replacement of waste LCD glass powder. This is because the waste LCD glass powder contains 62% $SiO_2$, which is a low dielectric material that is an insulator. Therefore, the resistivity increases with the $SiO_2$ content.

• 한국반도체및디스플레이장비학회:학술대회논문집
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• 한국반도체및디스플레이장비학회 2006년도 춘계학술대회
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• pp.190-193
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• 2006

Gadolinium-substituted bismuth titanate, $Bi_{3.3}Gd_{0.7}Ti_{3}O_{12}$, thin films were successfully fabricated on Pt(111)/Ti/$SiO_2$/Si(100) substrates by a MOCVD process. Fabricated BGT thin films were found to be random oriental ions, which were confirmed by X-ray diffraction and scanning electron microscope analysis. The remanent polarization value ($2P_r$) of the BGT thin film annealed at $720^{\circ}C$ was $45.13{\mu}C/cm^2$, at an applied voltage of 5 V. The BGT thin film exhibits a good fatigue resistance up to $1{\times}10^{11}$ switching cycles at a frequency of 1 MHz with applied voltage of 5 V. These results indicate that the randomly oriented BGT thin film is a promising candidate among ferroelectric materials useful in lead-free nonvolatile ferroelectric random access memory applications.

• 한국세라믹학회지
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• 제11권1호
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• pp.29-35
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• 1974

Effect of calcium sulfate and barium sulfate on the formation of portland cement clinker was studied by means of chemical analysis. DTA and X-ray diffraction analysis. In the presence of liquid phase, effect of the additives on the formation of tricalcium silicate was examined according to the reaction, 2CaO.$SiO_3$＋CaO$\longrightarrow$3CaO.$SiO_3$, which is the principal reaction in portland cement clinkerization, and optimum conditions in firing clinker concerning amount of additive, firing time and temperature were determined, and its kinetics was referred to. The experimental results are summerized as follow: (1) Appropriate burning temperature range of cement clinker is more limited as the content of calcium sulfate in clinker is increased. Amount of calcium sulfate, firing time and temperature in proper condition of clinkerization is related to each others. Being added suitable quantity of calcium sulfate, firing temperature of clinker can be lowered about $100^{\circ}C$. (2) When 3-5 mole% of calcium sulfate is added, firing time of 15-30 minutes at about $1380^{\circ}C$ is reasonable, and if the content is over7 mole %, firing for 1 hr. or more at $1350^{\circ}C$ is anticipated to be optimum condition. (3) In the reaction of tricalcium silicate formation, the role of barium sulfate as a mineralizer is similar to that of calcium sulfate, but the optimum firing temperature of cement clinker containing barium sulfate tends to be 20-$30^{\circ}C$ higher than that of clinker containing calcium sulfate. (4) When barium sulfate is used as mineralizer, 2-3 mole % of it to tricalcium silicate is recommended and if it is added more than this amount, free CaO is increased rapidly in clinker and alite formation is inhibited.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제45회 하계 정기학술대회 초록집
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• pp.289-289
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• 2013

While there are plenty of studies on synthesizing semiconducting germanium nanowires (Ge NWs) by vapor-liquid-solid (VLS) process, it is difficult to inject dopants into them with uniform dopants distribution due to vapor-solid (VS) deposition. In particular, as precursors and dopants such as germane ($GeH_4$), phosphine ($PH_3$) or diborane ($B_2H_6$) incorporate through sidewall of nanowire, it is hard to obtain the structural and electrical uniformity of Ge NWs. Moreover, the drastic tapered structure of Ge NWs is observed when it is synthesized at high temperature over $400^{\circ}C$ because of excessive VS deposition. In 2006, Emanuel Tutuc et al. demonstrated Ge NW pn junction using p-type shell as depleted layer. However, it could not be prevented from undesirable VS deposition and it still kept the tapered structures of Ge NWs as a result. Herein, we adopt $C_2H_2$ gas in order to passivate Ge NWs with carbon sheath, which makes the entire Ge NWs uniform at even higher temperature over $450^{\circ}C$. We can also synthesize non-tapered and uniformly doped Ge NWs, restricting incorporation of excess germanium on the surface. The Ge NWs with carbon sheath are grown via VLS process on a $Si/SiO_2$ substrate coated 2 nm Au film. Thin Au film is thermally evaporated on a $Si/SiO_2$ substrate. The NW is grown flowing $GeH_4$, HCl, $C_2H_2$ and PH3 for n-type, $B_2H_6$ for p-type at a total pressure of 15 Torr and temperatures of $480{\sim}500^{\circ}C$. Scanning electron microscopy (SEM) reveals clear surface of the Ge NWs synthesized at $500^{\circ}C$. Raman spectroscopy peaked at about ~300 $cm^{-1}$ indicates it is comprised of single crystalline germanium in the core of Ge NWs and it is proved to be covered by thin amorphous carbon by two peaks of 1330 $cm^{-1}$ (D-band) and 1590 $cm^{-1}$ (G-band). Furthermore, the electrical performances of Ge NWs doped with boron and phosphorus are measured by field effect transistor (FET) and they shows typical curves of p-type and n-type FET. It is expected to have general potentials for development of logic devices and solar cells using p-type and n-type Ge NWs with carbon sheath.