• Journal of Power Electronics
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• v.15 no.2
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• pp.309-318
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• 2015

This study proposes a dual-output single-stage bridgeless single-ended primary-inductor converter (DOSSBS) that can completely remove the front-end full-bridge alternating current-direct current rectifier to accomplish power factor correction for universal line input. Without the need for bridge diodes, the proposed converter has the advantages of low component count and simple structure, and can thus significantly reduce power loss. DOSSBS has two uncommon output ports to provide different voltage levels to loads, instead of using two separate power factor correctors or multi-stage configurations in a single stage. Therefore, this proposed converter is cost-effective and compact. A magnetically coupled inductor is introduced in DOSSBS to replace two separate inductors to decrease volume and cost. Energy stored in the leakage inductance of the coupled inductor can be completely recycled. In each line cycle, the two active switches in DOSSBS are operated in either high-frequency pulse-width modulation pattern or low-frequency rectifying mode for switching loss reduction. A prototype for dealing with an $85-265V_{rms}$ universal line is designed, analyzed, and built. Practical measurements demonstrate the feasibility and functionality of the proposed converter.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07a
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• pp.177-180
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• 2004

발광층에 Alq3와 rubrene을 mixed host로 사용하고 DCJTB를 형광 dopant로 사용한 다층 박막 구조의 red OLEDs를 제작하였다. 소자의 구조는 $ITO:Anode(120nm)/{\alpha}-NPD:HTL(40nm)/Alq_3+Rubrene(mixed\;host\;1:1)+DCJTB(red\;dopant\;3%)+:EML(20nm)/Alq_3:ETL(40nm)/MgAg(Mg\;5%\;wt):Cathode(150nm)$ 로서 EML내부에 DCJTB를 Totally Doping Method와 Dotted-Line Doping Method의 두 가지 방법으로 도핑 하였다. Mixed host구조에 DCJTB를 6구간으로 나누어 Dotted Line Doping한 소자는 luminance yield가 $9.2cd/A@10mA/cm^2$ 이었다. 이 소자는 DCJTB만을 Totally Doping한 소자의 luminance yield $3.2cd/A@10mA/cm^2$에 비해 약 190%정도의 높은 효율 향상을 보였다. 또한 $10mA/cm^2$에 도달하는 전압은 5.5V Vs. 8.5V로서 mixed host를 사용한 소자에서 약 3V정도 구동전압이 낮아지는 효과가 있었다. 발광 스펙트럼의 Full Width Half Maximum(FWHM)은 각각 56.6nm와 61nm로서 rubrene을 mixed host로 사용한 소자에서 높은 색 순도를 얻을 수 있었다. 이러한 성능의 향상은 $Alq_3$와 혼합된 rubrene에 의한 낮은 전하주 입장벽, 높은 전류밀도에서 나타나는 발광감쇄현상의 감소, 그리고 발광층의 DLD구조에 의한 전하의 trap & confinement 에 따른 발광 exciton의 형성확률이 증가한데서 나타났다고 생각된다.

• Korean Journal of Optics and Photonics
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• v.32 no.6
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• pp.276-285
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• 2021

This paper reports the study of the line-beam optical system of the laser lift-off (LLO) equipment used in the OLED manufacturing process. To obtain both a long process depth and a narrow width of the line beam, even with the poor M² value of the laser source, the research is focused on the optical system, including the beam transformation unit (BTU). We also propose optical configurations for the super-Gaussian distribution and the fiber-based BTU for the flat-top distribution.

• Progress in Superconductivity and Cryogenics
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• v.8 no.1
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• pp.19-22
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• 2006

Desirable substrates for $YBa_2Cu_3O_{7-\delta}$ coated conductor are highly cube textured Ni or Ni-alloy tapes, which can be produced by cold rolling and recrystallization annealing. We have fabricated hi-axially textured pure Ni tapes for the application of coated conductors. The sintered Ni rod was cold-rolled into the thin tapes of $50{\mu}m$ thickness and the tapes were heat-treated for texture development with line-focused infrared heater. The temperature was maintained at $800\sim1050^{\circ}C$, using 1kW double ended linear halogen lamp in $96%Ar-4%H_2$ atmosphere The biaxially tortured Ni tapes were successfully formed by line-focused infrared heat treatment The texture of the annealed Ni tapes was analysed using the GADDS (general area detector diffraction system). The full width at half maximum values of phi and omega scan for the Ni tapes were less than $10^{\circ}$ and the grain size was $20-50{\mu}m$.

• The Bulletin of The Korean Astronomical Society
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• v.46 no.2
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• pp.69.2-69.2
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• 2021

We present the discovery of rare active galactic nuclei (AGNs) in nearby (z<0.05) compact elliptical galaxies (cEs) located in isolated environments. Using spectroscopic data from the Sloan Digital Sky Survey (SDSS) Data Release 12, four AGNs were identified based on the optical emission-line diagnostic diagram. SDSS optical spectra of AGNs show the presence of distinct narrow-line emissions. Utilizing the black hole (BH) mass-stellar velocity dispersion scaling relation and the correlation between the narrow L([OIII])/L(Hβ) line ratio and the width of the broad Hα emission line, we estimated the BH masses of the cEs to be in the range of 7×10⁵-8×10⁷ solar mass. The observed surface brightness profiles of the cEs were fitted with a double Sérsic function using the Dark Energy Camera Legacy Survey r-band imaging data. Assuming the inner component as the bulge, the K-band bulge luminosity was also estimated from the corresponding Two Micron All Sky Survey images. We found that our cEs follow the observed BH mass-stellar velocity dispersion and BH mass-bulge luminosity scaling relations, albeit there was a large uncertainty in the derived BH mass of one cE. In view of the observational properties of BHs and those of the stellar populations of cEs, we discuss the proposition that cEs in isolated environments are bona fide low-mass early-type galaxies (i.e., a nature origin).

• Journal of The Korean Astronomical Society
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• v.56 no.1
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• pp.23-33
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• 2023

We investigate the diffusion process of Thomson-scattered line photons in both real space and frequency space through a Monte Carlo approach. The emission source is assumed to be monochromatic and point-like embedded at the center of a free electron region in the form of a sphere and a slab. In the case of a spherical region, the line profiles emergent at a location of Thomson optical depth τ_Th from the source exhibit the full width of the half maximum σ_λ ≃ τ^1.5_Th. In the slab case, we focus on the polarization behavior where the polarization direction flips from the normal direction of the slab to the parallel as the slab optical depth τ_Th increases from τ_Th ≪ 1 to τ_Th ≫ 1. We propose that the polarization flip to the parallel direction to the slab surface in optically thick slabs is attributed to the robustness of the Stokes parameter Q along the vertical axis with respect to the observer's line of sight whereas randomization dominates the remaining region as τ_Th increases. A brief discussion on the importance of our study is presented.

• Korean Journal of Environment and Ecology
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• v.27 no.2
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• pp.253-265
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• 2013

This study was correlation analysis between provision and management of street green and street environment through field survey about city official roads(93 routes, 629.2km) in Seoul. Green belt under the street trees were 17.5% of all routes. Composition of street green belt width of 1~ 2m was the most common(11.6%). Management status as a protected facilities were protect frame and prtect cover installed inerval(60.1%). Interval of pruning was 63.5%. Type of tree was mainly 47.9%. Road width was mainly more than 8-line(51.3%). Sidewalk width was mainly 3~6m(84.1%)in environment status of street. Landuse was mainly commercial and business(70.3%). Electronic wire complete was mainly compete with crown(33.6%). Use of sidewalk was mainly used(16.3%). ANOVA analysis was conducted between the Street green and environment of Street. Street green belt(more than with 3m) was analyzed to be effective in street green manufacture. Natural green area of city's outside and Industrial area were analyzed to be effective. Use of sidewalk was to be a management. Protection facilities are installed on the narrow sidewalk width lower intensity. There was a higher strength in narrow sidewalk width, road width and compete with crown. And type of tree was higher strength similarly. Pruning and type of tree showd a significant correlation. Thus, ensure sufficient sidewalk width and land use should be considered for street green was effective manufacture and management. Species selection and pruning management was needed by consider electronic wire management, type of tree and landscape.

• Journal of the Microelectronics and Packaging Society
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• v.6 no.1
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• pp.1-10
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• 1999

InGaP epilayers were grown on the flat, $2^{\circ}$off, $6^{\circ}$ off, and $10^{\circ}$off GaAs substrates by organo-metallic vapor phase epitaxy, and influences of crystallographic misorientation of the substrate on the structural and optical properties such as lattice mismatch, elastic strain, lattice curvature, misfit stress, and PL intensity /line-width were investigated in this study. Material characterizations were carried out by TXRD( tripple-axis x-ray diffractometer) and low temperature (11K) PL (photoluminescence). With increase of the substrate misorientation angle (S.M.A.), the relative incorporation of Ga atoms on the substrate surface was found to be enhanced. Also, with increase of the S. M. A., the x-ray line-width of the InGaP epilayer was reduced, indicating that the crystal quality of the epilayer could be improved tilth a misoriented substrate. It was also found that the elastic accommodation of the strain-free lattice misfit was more remarkable in a misoriented sample. PL intensity increased, and PL line-width and emission wavelength decreased with the increase of S. M. A. The results conclude that the elastic characteristics and the crystal quality of the InGaP epilayer could be remarkably enhanced when the misoriented substrates were employed.

• Transactions of the Korean Society of Mechanical Engineers A
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• v.34 no.12
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• pp.1877-1883
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• 2010

We examined the mechanism of generation of higher harmonics by theoretically analyzing the frequency characteristics of a narrow-band surface wave generated by a laser beam with line-arrayed slit masks. We experimentally analyzed the effects of slit opening width and laser intensity on the acoustic nonlinearity of aluminum 6061-T6 alloy by using single-slit and line-arrayed slit masks. The magnitude of the harmonic wave depended on the slit opening width. In our experiment, we generated a 1.75-MHz surface wave by using an arrayed slit with intervals of 1.67 mm. The magnitude of the second harmonic component decreased about by 80% when the slit opening width was increased from 0.5 mm to 1.0 mm. In addition, the relationship between the magnitudes of the fundamental and the second harmonic wave showed good linearity, which agreed well with the typical behavior of acoustic nonlinearity.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.173-173
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• 2010

Recently, a patterned sapphire substrate (PSS) has been intensively used as one of the effective ways to reduce the dislocation density for the III-nitride epitaxial layers aiming for the application of high-performance, especially high-brightness, light-emitting diodes (LEDs). In this paper, we analyze the growth kinetics of the atoms and crystalline quality for the undopped-GaN depending on the facets of the pattern fabricated on a sapphire substrate. The effects of the PSS on the device characteristics of InGaN/GaN LEDs were also investigated. Several GaN samples were grown on the PSS under the different growth conditions. And the undoped-GaN layer was grown on a planar sapphire substrate as a reference. For the (002) plane of the undoped-GaN layer, as an example, the line-width broadening of the x-ray diffraction (XRD) spectrum on a planar sapphire substrate is 216.0 arcsec which is significantly narrower than that of 277.2 arcsec for the PSS. However, the line-width broadening for the (102) plane on the planar sapphire substrate (363.6 arcsec) is larger than that for the PSS (309.6 arcsec). Even though the growth parameters such as growth temperature, growth time, and pressure were systematically changed, this kind of trend in the line-width broadening of XRD spectrum was similar. The emission wavelength of the undoped-GaN layer on the PSS was red-shifted by 5.7 nm from that of the conventional LEDs (364.1 nm) under the same growth conditions. In addition, the intensity for the GaN layer on the PSS was three times larger than that of the planar case. The spatial variation in the emission wavelength of the undoped-GaN layer on the PSS was statistically ${\pm}0.5\;nm$ obtained from the photoluminescence mapping results throughout the whole wafer. These results will be discussed in terms of the mixed dislocation depending on the facets and the period of the patterns.