• 한국전기전자재료학회논문지
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• 제13권8호
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• pp.651-657
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• 2000

The notching effect in etching of undoped amorphous silicon gate had different characteristics and mechanism comparing with reported ones. The undoped amorphous silicon was etched by using HBr gas plasma. First in the region of small line width the potential increased as a result of ions in the exposed surface of oxide and the incident ions between the small line widths were deflected more wide range therefore the depth of notching was shallow and wide. Second in the region of large line width of gate electrons were charged on the top of photoresist and the side of gate a part of ions deflected. The deflected ions were partly charged positive on the side of gate and then these partly charged ions produced potential difference. Therefore ions stored up more at independent line than at dense line and notching became deeper by Br ion bombardments.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 춘계학술대회 논문집 전자세라믹스 센서 및 박막재료 반도체재료 일렉트렛트 및 응용기술
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• pp.10-13
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• 2000

The notching effect in etching of un doped amorphous silicon gate had different characteristics and mechanism comparing with reported ones. The undoped amorphous silicon was etched by using HBr gas plasma, First, in the region of small line width, the potential was increased as a result of ions in the exposed surface of oxide, and the incident ions between the small line width were deflected more wide range, therefore the depth of notching was shallow and wide, Second, in the region of large line width of gate, electrons were charged on the top of photoresist and the side of gate, a part of ions deflected, The deflected ions were locally charged positive on the side of gate, and then the potential difference was produced, therefore, ions stored up more at independent line than at dense line, and nothing became deeper by Br ion bombardment.

• 공업화학
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• 제20권1호
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• pp.99-103
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• 2009

반도체 소자의 실리콘 게이트 전극 식각공정은 산화막에 대한 높은 식각 선택비와 정확한 식각형상 제어 등의 공정요구 조건을 충족시키기 위해 고밀도 플라즈마 식각공정을 사용하나 식각 후 notching이 발생되는 문제점을 보이고 있다. 특이하게 도핑 되지 않은 비정질 실리콘을 게이트 전극 물질로 사용한 경우 발생된 notching의 위치가 가장 외곽에 위치한 게이트 전극선의 바깥쪽에서 주로 발생되는 것이 관찰 되었다. 본 연구에서는 $Cl_2/HBr/O_2$의 식각기체 구성으로 notching 발생이 식각변수들에 따라 받는 경향성을 파악하고, 식각장치 내에서 실리콘 기판에 도달하는 식각 이온들의 진행경로를 분석하였다. 주 원인은 플라즈마 내의 식각 활성종 이온들이 대전효과에 의하여 궤적의 왜곡이 일어나 notching 현상이 발생되는 것으로 파악되었다. 이 결과를 바탕으로 도핑 되지 않은 비정질 실리콘 게이트 식각에서 발생하는 notching의 형성기구를 정성적으로 설명하였다.

• 대한두개안면성형외과학회지
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• 제18권4호
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• pp.277-281
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• 2017

Traumatic cleft earlobes are a common problem encountered by plastic and reconstructive surgeons. Various techniques have been reported for the repair of traumatic cleft earlobes. Usually, the techniques of split earlobe repair are divided into two categories, namely straight- and broken-line repairs. Straight-line repair is simple and easy, but scar contracture frequently results in notching of the inferior border of the lobule. It can be avoided by the broken-line repair such as Z-plasty, L-plasty, or a V-shaped flap. Between April 2016 and February 2017, six patients who presented with traumatic cleft earlobe underwent surgical correction using a combination of the inverted V-shaped excision technique and vertical mattress suture method. All the patients were female and had a unilateral complete cleft earlobe. No postoperative notching of the inferior border the lobule occurred during 6-16 months of follow-up. Without the use of a broken-line repair, both the patients and the operators attained aesthetically satisfactory results. Therefore, the combination of the inverted V-shaped excision technique and vertical mattress suture method is considered useful in the treatment of traumatic cleft earlobes.

• 전력전자학회:학술대회논문집
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• 전력전자학회 2014년도 추계학술대회 논문집
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• pp.87-88
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• 2014

The paper presents a novel phase locked loop(PLL) control method for robust three-phase thyristor dual converters under sag, notch, and phase loss conditions. This method is applied to three line to line voltages of grid to derive three phase angle errors from three separated single-phase PLLs. They can substitute for abnormal phase to guarantee the synchronization in the various grid fault conditions. The performance of novel PLL with moving average method is verified through simulations.

• 대한구순구개열학회지
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• 제11권1호
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• pp.31-36
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• 2008

The variations of cleft lip deformities imposed the difficulty to the surgical correction for them. Straight line technique for cleft lip surgery has been ignored quite long since other techniques were developed. Initially the straight line technique was introduced and widely accepted because it is simple and easy to perform during the period of no adequate anesthetics. But it was abandoned for its several shortcomings such as tighten lip, vermilion notching, anatomical distortion, and wound contractures. Recently, some groups advocated the usefulness of straight line technique which has a significant modification from its original form. Additionally the variable degree of cleft lip deformity allows simple straight line closure for those patients. Here a case of simple straight line technique was presented and discussed for its reliability and plausible results as well.

• 대한구순구개열학회지
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• 제12권2호
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• pp.95-100
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• 2009

In spite of all fine methods developed for treating cleft lip, a certain percentage of cases might still need secondary correction. Generally, secondary revision of cleft lip is much difficult to produce esthetic outcome, because the cleft lip scar gives a variable symmetrical and anatomic defect that may not be possible to make inconspicuous of this scar and rebuild good esthetics. In this case report, a five year-old girl was underwent secondary cleft lip repair using straight line technique to correct unfavorable postoperative scar, peaking of Cupid's bow, notching of vermillion and shortened lip on cleft side with simultaneous repairing cleft palatal fistula. After operation, the secondary deformity was much improved, but, long term follow up is needed to evaluate the additional postoperative deformity might be happen during growth.