• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.13 no.8
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• pp.651-657
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• 2000

The notching effect in etching of undoped amorphous silicon gate had different characteristics and mechanism comparing with reported ones. The undoped amorphous silicon was etched by using HBr gas plasma. First in the region of small line width the potential increased as a result of ions in the exposed surface of oxide and the incident ions between the small line widths were deflected more wide range therefore the depth of notching was shallow and wide. Second in the region of large line width of gate electrons were charged on the top of photoresist and the side of gate a part of ions deflected. The deflected ions were partly charged positive on the side of gate and then these partly charged ions produced potential difference. Therefore ions stored up more at independent line than at dense line and notching became deeper by Br ion bombardments.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.04b
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• pp.10-13
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• 2000

The notching effect in etching of un doped amorphous silicon gate had different characteristics and mechanism comparing with reported ones. The undoped amorphous silicon was etched by using HBr gas plasma, First, in the region of small line width, the potential was increased as a result of ions in the exposed surface of oxide, and the incident ions between the small line width were deflected more wide range, therefore the depth of notching was shallow and wide, Second, in the region of large line width of gate, electrons were charged on the top of photoresist and the side of gate, a part of ions deflected, The deflected ions were locally charged positive on the side of gate, and then the potential difference was produced, therefore, ions stored up more at independent line than at dense line, and nothing became deeper by Br ion bombardment.

• Applied Chemistry for Engineering
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• v.20 no.1
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• pp.99-103
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• 2009

HBr and $O_2$ in $Cl_2$ gas ambient for the high density plasma gate etching has been used to increase the performance of gate electrode in semiconductor devices. When an un-doped amorphous silicon layer was used for a gate electrode material, the notching profile was observed at the outer sidewall foot of the outermost line. This phenomenon can be explained by the electron shading effect: i.e., electrons are captured at the photoresist sidewall while ions pass through the photoresist sidewall and reach the oxide surface at a narrowly spaced pattern during the over etch step. The potential distribution between gate lines deflects the ions trajectory toward the gate sidewall. In this study, an appropriate mechanism was proposed to explain the occurrence of notching in the gate electrode of un-doped amorphous silicon.

• Archives of Craniofacial Surgery
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• v.18 no.4
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• pp.277-281
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• 2017

Traumatic cleft earlobes are a common problem encountered by plastic and reconstructive surgeons. Various techniques have been reported for the repair of traumatic cleft earlobes. Usually, the techniques of split earlobe repair are divided into two categories, namely straight- and broken-line repairs. Straight-line repair is simple and easy, but scar contracture frequently results in notching of the inferior border of the lobule. It can be avoided by the broken-line repair such as Z-plasty, L-plasty, or a V-shaped flap. Between April 2016 and February 2017, six patients who presented with traumatic cleft earlobe underwent surgical correction using a combination of the inverted V-shaped excision technique and vertical mattress suture method. All the patients were female and had a unilateral complete cleft earlobe. No postoperative notching of the inferior border the lobule occurred during 6-16 months of follow-up. Without the use of a broken-line repair, both the patients and the operators attained aesthetically satisfactory results. Therefore, the combination of the inverted V-shaped excision technique and vertical mattress suture method is considered useful in the treatment of traumatic cleft earlobes.

• Proceedings of the KIPE Conference
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• 2014.11a
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• pp.87-88
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• 2014

The paper presents a novel phase locked loop(PLL) control method for robust three-phase thyristor dual converters under sag, notch, and phase loss conditions. This method is applied to three line to line voltages of grid to derive three phase angle errors from three separated single-phase PLLs. They can substitute for abnormal phase to guarantee the synchronization in the various grid fault conditions. The performance of novel PLL with moving average method is verified through simulations.

• Korean Journal of Cleft Lip And Palate
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• v.11 no.1
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• pp.31-36
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• 2008

The variations of cleft lip deformities imposed the difficulty to the surgical correction for them. Straight line technique for cleft lip surgery has been ignored quite long since other techniques were developed. Initially the straight line technique was introduced and widely accepted because it is simple and easy to perform during the period of no adequate anesthetics. But it was abandoned for its several shortcomings such as tighten lip, vermilion notching, anatomical distortion, and wound contractures. Recently, some groups advocated the usefulness of straight line technique which has a significant modification from its original form. Additionally the variable degree of cleft lip deformity allows simple straight line closure for those patients. Here a case of simple straight line technique was presented and discussed for its reliability and plausible results as well.

• Korean Journal of Cleft Lip And Palate
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• v.12 no.2
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• pp.95-100
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• 2009

In spite of all fine methods developed for treating cleft lip, a certain percentage of cases might still need secondary correction. Generally, secondary revision of cleft lip is much difficult to produce esthetic outcome, because the cleft lip scar gives a variable symmetrical and anatomic defect that may not be possible to make inconspicuous of this scar and rebuild good esthetics. In this case report, a five year-old girl was underwent secondary cleft lip repair using straight line technique to correct unfavorable postoperative scar, peaking of Cupid's bow, notching of vermillion and shortened lip on cleft side with simultaneous repairing cleft palatal fistula. After operation, the secondary deformity was much improved, but, long term follow up is needed to evaluate the additional postoperative deformity might be happen during growth.