• 제목/요약/키워드: light-emitting diode(LED)

검색결과 856건 처리시간 0.029초

p-n Heterojunction Composed of n-ZnO/p-Zn-doped InP

  • Shim, Eun-Sub;Kang, Hong-Seong;Kang, Jeong-Seok;Pang, Seong-Sik;Lee, Sang-Yeol
    • Transactions on Electrical and Electronic Materials
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    • 제3권1호
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    • pp.1-3
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    • 2002
  • A p-n junction was obtained by the deposition of an n-type ZnO thin film on a p-type Zn-doped InP substrate. The Zn-doped InP substrate has been made by the diffusion of Zn with sealed ampoule technique. The ZnO deposition process was performed by pulsed laser deposition (PLD). The p-n junction was formed and showed typical I-V characteristics. We will also discuss about the realization of an ultraviolet light-emitting diode (LED). The structure of n-ZnO/p-Zn-doped InP could be a good candidate for the realization of an ultraviolet light-emitting diode or an ultraviolet laser diode.

Ni-assisted Fabrication of GaN Based Surface Nano-textured Light Emitting Diodes for Improved Light Output Power

  • Mustary, Mumta Hena;Ryu, Beo Deul;Han, Min;Yang, Jong Han;Lysak, Volodymyr V.;Hong, Chang-Hee
    • JSTS:Journal of Semiconductor Technology and Science
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    • 제15권4호
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    • pp.454-461
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    • 2015
  • Light enhancement of GaN based light emitting diodes (LEDs) have been investigated by texturing the top p-GaN surface. Nano-textured LEDs have been fabricated using self-assembled Ni nano mask during dry etching process. Experimental results were further compared with simulation data. Three types of LEDs were fabricated: Conventional (planar LED), Surface nano-porous (porous LED) and Surface nano-cluster (cluster LED). Compared to planar LED there were about 100% and 54% enhancement of light output power for porous and cluster LED respectively at an injection current of 20 mA. Moreover, simulation result showed consistency with experimental result. The increased probability of light scattering at the nano-textured GaN-air interface is the major reason for increasing the light extraction efficiency.

업무용 건축물의 실내 조명기구 특성에 따른 발열 효과에 관한 연구 (Interior heating effect in an office building according to heat properties of light fixture)

  • 이윤진;안병립;김종훈;정학근;장철용;김태연
    • KIEAE Journal
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    • 제15권2호
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    • pp.117-122
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    • 2015
  • Purpose: Generally, 30% of the total energy consumption in office building is used for artificial indoor lightings, and almost 75-85% of electric power in fluorescent and Light-Emitting Diode (LED) lightings can be dissipated as a form of heat into indoor environment. The heat generated by indoor lightings can cause the increase of cooling load in office buildings. Thus, it its important to consider indoor lightings as a heat and light source, simultaneously. Method: In this study, we installed two kinds of indoor lightings including fluorescent and LED lightings and measured surface temperature of both indoor lightings. In addition, we obtained ambient temperature of indoor space and finally calculated total heat dissipated from plenum area and surface of lightings. Result: Total indoor heat gain was 87.17Wh and 201.36Wh in cases of six 40W-LED lightings and 64W-fluorescent lightings, respectively.

지속적 바이오매스 생산을 위한 클로렐라 반연속 배양 연구: 발광다이오드(Light Emitting Diode) 광원 및 고농도 인과 질소를 함유한 배지 사용 효과를 중심으로 한 연구 (Optimum Semi-Continuous Cultivation of Chlorella sp. FC-21 for Production of Biomass: Light Emitting Diodes as a Light Source and High Concentrations of Nitrogen and Phosphate in Culture Media)

  • 최보람;임준혁;이제근;이태윤
    • 대한환경공학회지
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    • 제34권8호
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    • pp.523-527
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    • 2012
  • 본 연구는 담수미세조류의 일종인 클로렐라를 적색 발광다이오드를 이용하여 효율적으로 반연속 배양하기 위한 조건을 찾기 위해 수행되었다. 클로렐라 배양에 가장 효율적인 적색 LED를 사용하여 반연속배양을 실시하였으며, 배양 중 인과 질소가 급격히 감소하였으며 이는 클로렐라의 성장과 반비례의 관계를 보여 주었다. 효율적인 반연속 배양을 위해 인과 질소의 농도를 증가시킨 배지를 사용하여 배지교체 주기를 연장시켜 배양 효율성을 높였다. 배지교체 시 클로렐라의 셀 농도는 지속적으로 증가하였으나, 셀 크기는 감소하였다. 셀 농도와 셀 크기를 고려할 때 배양 전과정을 통해 생산되는 바이오매스의 양은 일정하게 유지되었다.

전계형 스위칭 소자가 집적된 마이크로 LED 디스플레이 광원의 광 무선 통신 기능 검증 (Verification of Optical Wireless Communication Functionality in Micro-LED Display Light Source Integrated with Field-effect Transistor)

  • 김종인;박현선;민판기;고명진;김영우;김정현
    • 반도체디스플레이기술학회지
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    • 제22권2호
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    • pp.1-5
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    • 2023
  • In the past, display devices have undergone many changes, such as plasma TVs and LCDs, and have continued to develop. Recently, new display technologies, such as Organic Light Emitting Diode displays and Inorganic Light Emitting Diode displays, have been developed. Among them, Micro LED displays have the potential to improve performance more than LCDs and OLEDs, but a lot of effort and time are needed until the mass production technology (transfer and bonding) of Micro LED displays is developed. We have developed a new Micro LED display light source that can be produced using existing transfer and bonding process technologies to enable faster commercialization of Micro LED in the industry. This light source is TFT deposition on LED. TFT deposition on LED has the advantage of being able to produce displays using existing process technology, making early commercialization of display application products possible. In this study, we applied the Active Driving method to verify the performance of TFT deposition on LED as a display to determine its commercialization potential. Additionally, to facilitate faster application of Micro LED in the industry, we applied TFT deposition on LED to Optical Wireless Communication systems, which are widely used in application service areas such as safety/security and sensors, to verify its communication performance. The experimental results confirmed that TFT deposition on LED is not only capable of AM driving but can also be applied to OWC systems.

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