• 한국정보디스플레이학회:학술대회논문집
• /
• 2007.08b
• /
• pp.1454-1456
• /
• 2007

The electrical and the optical properties of blue organic light-emitting devices (OLEDs) with a multiple emitting layer (EML) acting as electron and hole trapping layers were investigated. While the luminance efficiency of the OLEDs with a multiple EML was very stable, regardless of variations in the applied voltage.

• Journal of the Korean Chemical Society
• /
• v.28 no.4
• /
• pp.251-258
• /
• 1984

The mechanism of photosensitization and the affect of binder on dye-sensitized ZnO have been studied by surface photovoltage spectroscopy. It has been found that the value of energy trapping level $E_{t1}$ on ZnO is 1.12eV (${\lambda$ = 1,100nm) and that of energy trapping level $E_{t2}$ on dye-sensitized ZnO is 0.99eV (${\lambda$ = 1,250nm) which is shifted towards a longer wavelength. The effect of binder on ZnO has been increased the efficiency of surface photovoltage, but it does not effect the values of energy trapping level. The acid-type dyes agree well with the prediction based on an electron transfer mechanism. The desensitization of the Na salt-type dyes for the intrinsic photoresponse of zinc oxide can be explained by energy transfer mechanism. It has been obtained that the dye-sensitized ZnO indicates the possibility of electrophotographic photosensitizer for the infrared range of light.

• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.13 no.6
• /
• pp.279-283
• /
• 2003

In this study, ZnTe : S single crystal thin films substituted by sulfur were grown on GaAs (100) substrates by hot-wall epitaxy. The photoluminescence (PL) characteristics of ZnTe : S single crystal thin films was measured to investigate the effects due to sulfur atoms in the ZnTe layer. The Peak of 2.339 eV identified as the isoelectronic center was observed in low temperature PL spectrum, but PL spectra which the origin had not been well-explained were not observed. Temperature dependence of PL intensities of the light hole free exciton was explained by extrinsic self-trapping. Besides it is reported that the emission lines near absorption edge at room temperature were observed.

• Korean Journal of Optics and Photonics
• /
• v.17 no.1
• /
• pp.1-6
• /
• 2006

We investigated the characteristics of the nonlinear magneto-optic effect (NMOE) depend on the transitions, the laser intensity and the temperature of the vapor cell, in the $D_1$ transition of $^{87}Rb$ atoms by using the Rb vapor cell contained with buffer gas of Ne 6.7 kPa. The size and the width of NMOE signal were increased according to the light intensity and temperature in the transition of F=2$\to$F'=2. However, In the case of using the F=2$\to$F'=1 transition, the size of the signal could be increased according to the light intensity without additional broadening of the width. We confirmed that the sensitivity of detecting small magnetic flux improved in this transition, and explained these effects by the different of the CPT configuration between Zeeman sublevels. At the optimal condition in experiment, the sensitivity of this system was evaluated less then $70pT/\sqrt{Hz}$.

• Proceedings of the Korean Society of Tribologists and Lubrication Engineers Conference
• /
• 1999.06a
• /
• pp.47-52
• /
• 1999

In recent years, the micro-tribological behavior of silicon has been the topic of much interest. peformance of thin film under light load is important for potential applications in MEMS. In this work under light load and various humidity, the tribological behavior of undulated surface with various width and shape was Investigated. The results show that undulated surface of linear type had good tribological properties abrasive wear occur depending on the sliding condition. Also the effect of humidity on friction and wear was not important if exist undulation. Finally, undulations on HDD were found to be effective in trapping wear particles.

• Proceedings of the Korean Society of Tribologists and Lubrication Engineers Conference
• /
• 1998.04a
• /
• pp.91-96
• /
• 1998

In recent years, the tribological behavior of coated ceramic material has been the topic of much interest. Particularly, the understanding of the tribological performance of thin film under light load is important for potential applications in MEMS. In this work under light load and low speed, the tribological behavior of coated silicon was investigated. The results show that both adhesive and abrasive wear occur depending on the sliding condition. Also the effect of humidity on friction was influenced by the apparent ares of contact between the two surfaces. Finally, undulations on the silicon wafer were found to be effective in trapping wear particles.

• Current Optics and Photonics
• /
• v.2 no.1
• /
• pp.85-89
• /
• 2018

This paper presents a new, efficient hybrid photonic-plasmonic structure. The proposed structure efficiently and with very high accuracy combines the resonant mode of a low-mode-volume photonic-crystal nanocavity with a bowtie nanoantenna's plasmonic resonance. The resulting enormous enhancement of light intensity of about $1.1{\times}10^7$ in the gap region of the bowtie nanoantenna, due to the effective optical-resonance combination, is realized by subtle optimization of the nanocavity's optical characteristics. This coupled structure holds great promise for many applications relying on strong confinement and enhancement of optical field in nanoscale volumes, including antennas (communication and information), optical trapping and manipulation, sensors, data storage, nonlinear optics, and lasers.

• Journal of Information Display
• /
• v.6 no.1
• /
• pp.33-36
• /
• 2005

To obtain various colors from the blue emitting poly(fluorene)s, two different approaches are introduced. One is copolymerization with low band gap comonomers and the other is molecular doping with various dyes. As fast and efficient exciton migration and trapping and/or energy transfer between the chromorphoric segments or doped dyes in conjugated polymers can shift the emission to longer wavelengths, these phenomena can be utilized to obtain various colors from the intrinsically blue light emitting poly(fluorene)s.

• 한국정보디스플레이학회:학술대회논문집
• /
• 2000.01a
• /
• pp.127-128
• /
• 2000

Organic light-emitting diodes(OLEDs) are constructed using multilayer organic thin films. The hole-transport layer is PVK and the emitting material is rubrene and $Alq_3$. The emitting layer is doped with rubrene partially. As the partially-doped layer migrate from the interface PVK/emitting layer, the emission peak of rubrene decrease and diminish. By comparing with the previous reports, we propose the zero-field hole injection barrier at ITO/PVK interface and hole-trapping effect of rubrene in host materials as predominant factor to determine the emission zone.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2014.02a
• /
• pp.454-454
• /
• 2014

Silicon microwire array is one of the promising platforms as a means for developing highly efficient solar cells thanks to the enhanced light trapping efficiency. Among the various fabrication methods of microstructures, deep reactive ion etching (DRIE) process has been extensively used in fabrication of high aspect ratio microwire arrays. In this presentation, we show precisely controlled Si microwire arrays by tuning the DRIE process conditions. A periodic microdisk arrays were patterned on 4-inch Si wafer (p-type, $1{\sim}10{\Omega}cm$) using photolithography. After developing the pattern, 150-nm-thick Al was deposited and lifted-off to leave Al microdisk arrays on the starting Si wafer. Periodic Al microdisk arrays (diameter of $2{\mu}m$ and periodic distance of $2{\mu}m$) were used as an etch mask. A DRIE process (Tegal 200) is used for anisotropic deep silicon etching at room temperature. During the process, $SF_6$ and $C_4F_8$ gases were used for the etching and surface passivation, respectively. The length and shape of microwire arrays were controlled by etching time and $SF_6/C_4F_8$ ratio. By adjusting $SF_6/C_4F_8$ gas ratio, the shape of Si microwire can be controlled, resulting in the formation of tapered or vertical microwires. After DRIE process, the residual polymer and etching damage on the surface of the microwires were removed using piranha solution ($H_2SO_4:H_2O_2=4:1$) followed by thermal oxidation ($900^{\circ}C$, 40 min). The oxide layer formed through the thermal oxidation was etched by diluted hydrofluoric acid (1 wt% HF). The surface morphology of a Si microwire arrays was characterized by field-emission scanning electron microscopy (FE-SEM, Hitachi S-4800). Optical reflection measurements were performed over 300~1100 nm wavelengths using a UV-Vis/NIR spectrophotometer (Cary 5000, Agilent) in which a 60 mm integrating sphere (Labsphere) is equipped to account for total light (diffuse and specular) reflected from the samples. The total reflection by the microwire arrays sample was reduced from 20 % to 10 % of the incident light over the visible region when the length of the microwire was increased from $10{\mu}m$ to $30{\mu}m$.