• Journal of the Korean Ceramic Society
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• v.50 no.2
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• pp.157-162
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• 2013

The need for lead-free piezoceramics has caused a renewal of interest in $BaTiO_3$-based systems. Recently, it was found that ceramics in the $(Ba,Ca)(Zr,Ti)O_3$ system have properties comparable to those of $Pb(Zr,Ti)O_3$. However, these ceramics require rather high sintering temperatures of $1450-1550^{\circ}C$. In this work, the effect of $TiO_2$ and CuO addition on the sintering behavior, microstructure, dielectric and piezoelectric properties of $(Ba_{0.85}Ca_{0.15})(Zr_{0.1}Ti_{0.9})O_3$ (BCTZ) ceramics will be discussed. BCTZ ceramics were prepared by the mixed oxide route and 1 mol % of $TiO_2$ or CuO was added. Undoped and doped ceramics were sintered at $1350^{\circ}C$ for 1-5 h. CuO was found to be a very effective sintering aid, with samples sintered for 1 h at $1350^{\circ}C$ having a bulk density of 95% theoretical density; however the piezoelectric properties were greatly reduced, probably due to the small grain size.

• Korean Journal of Materials Research
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• v.15 no.12
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• pp.756-759
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• 2005

A lead free piezoelectric material, bismuth sodium barium titanate $(Bi_{0.5}Na_{0.5})_{0.94}Ba_{0.06}TiO_3$ (BNBT), was considered as an environment-friendly alternatives for the current PZT system. A perovskite BNBT was synthesized by conventional bulk ceramic processing technique. In order to improve piezoelectric properties, $La_2O_3$ as a dopant was incorporated into the BNBT system up to 0.025 moi, ana the effects on subsequent the piezoelectric ana dielectric properties were systematically investigated. With increasing $La_2O_3$ contents, the equilibrium grain shape was remarkably evidenced and sintered density was increased. Piezoelectric and dielectric properties were s]town to have maximum values at the $La_2O_3$ contents of 0.02 mol. $La^{3+}$ ions seemed to act as a softener in the BNBT system and to enhance dielectric and piezoelectric properties in this study.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.35 no.5
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• pp.516-521
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• 2022

We investigated the microstructure, crystal structure, dielectric, and elecromechanical strain properties of lead-free BaTiO₃ (BT)-modified (Bi_1/2Na_1/2)TiO₃-SrTiO₃ (BNT-ST) piezoelectric ceramics. Samples were prepared by a conventional ceramic processing route. Temperature dependent dielectric properties confirmed that a phase transition from a nonergodic relaxor to an ergodic relaxor was induced when the BT concentration reached 1.5 mol%, interestingly, where the average grain size reached a maximum value of 4.5 ㎛. At the same time, enhanced electromechanical strain (S_max/E_max = 600 pm/V) was obtained. It is suggested that the induced ferroelectric-relaxor phase transition by the BT modification is responsible for the enhancement of electromechanical strain in 1.5 mol% BT-modified BNT-ST ceramics.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.6 no.6
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• pp.457-460
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• 2005

Nano-sized titanium oxide and zirconium oxide powders were synthesized by hydrolysis of titanium isopropoxide $[Ti(OC_3H7)_4]$ and zirconium tetrachloride ($ZrC1_4$) via a sol-gel technique. Lead titanate powders were prepared by mixing $TiO_2$ precursors with PbO slurry made with dilute $NH_4OH$. Lead zirconate titanate powders were, then, synthesized by mixing $PbTiO_3$ with $ZrO_2$ powders. The goal of this research was to obtain the $PbZrTiO_3(PZT)$ powders and sintering these powders at low temperature. The $PbTiO_3$ and PZT powders after firing were analyzed by X-ray diffraction(XRD) and transmission electron microscopy(TEM) was utilized to observe the shape and size of the synthesized nano-particles. In the XRD pattern, the well-crystallized PZT phase could be obtained in consequence of firing at $900^{\circ}C$. SEM micrographs also showed that grains of PZT were relatively well grown with the size of the range of $2{\~}4{\mu}m$. The densified perovskite structure of $PbZrTiO_3$ could be obtained by sintering at temperature as low as $900^{\circ}C$. Characterization of the samples showed improved piezoelectric properties.

• Journal of Korean Tunnelling and Underground Space Association
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• v.9 no.4
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• pp.403-413
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• 2007

As rock bolts become one of the main support systems in tunnels and underground structures, the integrity of the rock bolts affects the safety of these types of structures. The purpose of this study is the evaluation of rock bolt integrity using Fourier and wavelet transforms of the guided ultrasonic waves. After five rock bolt specimens with various defect ratios are embedded into a large scale concrete block, guided waves are generated by a PZT (lead zirconate titanate) element and measured by an acoustic emission (AE) sensor. The captured signals are analyzed in the frequency domain using the Fourier transform, and in the time-frequency domain using the wavelet transform based on a Gabor wavelet. The spectrum obtained from the Fourier transform shows that a portion of high frequency contents increases with increase in the defect ratio. Peak values in the time-frequency domain represent the interval of travel time of each echo. The energy velocities of the guided waves increase with the defect ratio. This study shows that the spectrum ratio and the energy velocity may be indicators fur the evaluation of rock bolt integrity.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.39 no.12
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• pp.1008-1015
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• 2002

The fabricated La-modified lead titanate (PLT) thin film without poling treatment was investigated for modulation frequency dependence of pyroelectric properties by the dynamic method. $Pb_{l-x}La_{x}Ti_{l-x/4}O_3$(x=0.1) (PLT(10)) thin film haying 10 mol% La content was deposited on a Pt/$TiO_{x}$/$SiO_2$/Si substrate by sol-gel method. The PLT(10) thin film exhibits a relatively excellent dielectric property. The pyroelectric coefficient (p) of the PLT(10) thin film is 6.6 x $10^{-9}C$$textrm{cm}^2$$.$K without frequency dependence. The figure of merits for the voltage responsivity and specific detectivity are 1.03 x $10^{-11}C$.cm/J and 1.46 x $10^{-10}C$.cm/J, respectively The PLT(10) thin film has voltage responsivity (RV) of 5.IS V/W at 8 Hz. Noise equivalent power (NEP) and specific detectivity ($D^{*}$) of the PLT(10) thin film are 9.93 x $10^{-8}$W/$Hz^{1/2}$ and 1.81 x $10^{6}$cm.$Hz^{1/2}$/W at the same frequency of 100 Hz,, respectively The results means that PLT thin film having 10 mol% La content is suitable for the sensing materials of pyroelectric IR sensors.

• Analytical Science and Technology
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• v.10 no.6
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• pp.439-444
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• 1997

Twelve kinds (1set) standard materials of chemical ingredients of lead zirconate titanate[$Pb(ZrTi)O_3$] have been developed in order to determine fast and accurate measurement of X-ray fluorescence spectrometry. Especially, we used diluted(ahout sixteen times) filling compound($Li_2B_4O_7/LiBO_2=4/1$) to consider removal effect of matrix, storage convenience, and homogenous characteristics. As a result from the four different laboratories, we obtained extremly good agreement about the standard curve on twelve standard materials which containing eleven elements, PbO, $ZrO_2$, $TiO_2$, SrO, $WO_3$, $La_2O_3$, $Cr_2O_3$, MgO, $Nb_2O_5$, and $MnO_2$. The correlation factor of standard curve was over 0.998. However, ZnO has relatively low correlation factor, 0.977, because the concentration was 10ppm lower than other original materials. This analysis reveals that ZnO has shown the poor linearity as well as low fluorescence intensity. In present work, XRF standard materials are useful for determining a rapid and accurate results for major and minor elements concentration among PZT.

• Korean Journal of Materials Research
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• v.10 no.4
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• pp.282-289
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• 2000

$PbTiO_3$ films were fabricated by electron cyclotron resonance plasma enhanced chemical vapor deposition(ECR-PECVD). Deposition characteristics of $PbTiO_3$films on $RuO_2$ and Pt substrates were investigated with varying the flow rate of metalorganic source and substrate temperature. The residence time of Pb-oxide molecules in much longer on $RuO_2$ than on Pt substrate, while the perovskite nucleation is more difficult on $RuO_2$ than on Pt substrate. Therefore, the process conditions to obtain the single perovskite $PbTiO_3$ phase are more restricted on $RuO_2$ than on Pt substrates. An introduction of Ti-oxide seed layer increases perovskite nucleation density and thus enlarges the process window to obtain the single perovkite phase. The introduction of Ti-oxide seed layer make the PZT film that Ti-components of $PbTiO_3$ are partially substituted with Zr atoms have single perovskite phase for the wide range of Zr/(Zr+Ti) concentration ratios.

• Korean Journal of Crystallography
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• v.16 no.2
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• pp.128-137
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• 2005

We report on the phase transitions of the perovskite nanostructures made by sol-gel template synthesis. The lead titanate ($PbTiO_{3}$) nanostructures were prepared with a chelate sol-gel of titanium tetrabutoxide ($Ti(O^{i}Pr){4}$) and lead acetate ($Pb(OAc)_{2}-3H_{2}O$). $Whatman^{\circledr}$ anodisc membranes (with about 200 nm pore size) served as the template. The template was dipped into the sol, allowed to air dry, and then calcined at $650^{\circ}C$. We have characterized the temperatures of the phase transitions in the $PbTiO_{3}$ nano-structures using DSC, DTA, and second harmonic generation (SHG).

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.30 no.5
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• pp.183-188
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• 2020

Lead zinc niobate (PZN)-added lead zirconate titanate (PZT) thick films with thickness of 5~10 ㎛ were fabricated on silicon and sapphire substrates using aerosol deposition method. The contents of PZN were varied from 0 %, 20 % and to 40 %. The PZN-added PZT film showed poorer electrical properties than pure PZT film when the films were coated on silicon substrate and annealed at 700℃. On the other hand, the PZN-added PZT film showed higher remanent polarization and dielectric constant values than pure PZT film when the films were coated on sapphire and annealed at 900℃. The ferroelectric and dielectric characteristics of 20 % PZN-added PZT films annealed at 900℃ were compared with the result values obtained from bulk ceramic specimen with same composition sintered at 1200℃. As annealing temperature increased, dielectric constant increased. These came from enhanced crystallization and grain growth by post heat treatment.