• 제목/요약/키워드: layer by layer

검색결과 24,301건 처리시간 0.055초

Numerical simulation of the effect of bedding layer on the tensile failure mechanism of rock using PFC2D

  • Sarfarazi, Vahab;Haeri, Hadi;Marji, Mohammad Fatehi
    • Structural Engineering and Mechanics
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    • 제69권1호
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    • pp.43-50
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    • 2019
  • In this research, the effect of bedding layer on the tensile failure mechanism of rocks has been investigated using PFC2D. For this purpose, firstly calibration of PFC2d was performed using Brazilian tensile strength. Secondly Brazilian test was performed on the bedding layer. Thickness of layers were 5 mm, 10 mm and 20 mm. in each thickness layer, layer angles changes from $0^{\circ}$ to $90^{\circ}$ with increment of $15^{\circ}$. Totally, 21 model were simulated and tested by loading rate of 0.016 mm/s. The results show that when layer angle is less than 15, tensile cracks initiates between the layers and propagate till coalesce with model boundary. Its trace is too high. With increasing the layer angle, less layer mobilizes in failure process. Also, the failure trace is very short. It's to be noted that number of cracks decrease with increasing the layer thickness. Also, Brazilian tensile strength is minimum when bedding layer angle is between $45^{\circ}$ and $75^{\circ}$. The maximum one is related to layer angle of $90^{\circ}$.

Layer-by-Layer 자기조립법에 의한 Poly(ethyiene-alt-maleic anhydride)i Poly(4-vinyl pyrtdine) 다층막 제조 (Fabrication of an Alternating Multilayer Film of Poly(ethylene-alt-maleic anhydride) and Poly(4-vinyl pyridine) by Layer-by-Layer Self-Assembly Method)

  • 이준열;홍숙영
    • 폴리머
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    • 제29권4호
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    • pp.392-398
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    • 2005
  • Layer-by-layer(LbL) 흡착에 의한 poly(ethylene-alt-m미? anhydride) (PEMAh)/poly(4-vinyl pyridine) (P4VP) 자기조립 다층박막을 제조하였다. 자기조립 다층막을 이루는 PEMAh/P4VP 두 고분자 사이의 수소 결합과 정전기적 인력이 다층막을 이루는 원동력이라는 것이 푸리에 변환 적외선(FT-IR) 분광분석에 의해서 확인되었다. 다층막의 균일한 자기조립 과정은 PEMAh/P4VP 이중층막의 적층 수 증가에 따른 UV-vis 스펙트럼의 256 nm에서 나타나는 P4VP 특성 흡수 피크의 선형적 증가에 의해서 확인할 수 있었다. 다층막을 이루는 고분자 전해질 담지 용액의 조건 변화가 다층막 형성에 미치는 영향을 살펴보기 위하여 두 고분자 용액의 농도 및 PEMAh 담지용액의 pH를 변화시키면서 다층막을 제조하였다. 다층막의 두께, 흡착된 고분자 전해질 질량 및 표면 거칠기의 변화를 UV-vis 분광 분석, 수정진동자 미량저울(quartz crystal microbalance;QCM) 및 원자 힘 현미경(atomic force microscopy;AFM)을 이용하여 측정하였다.

족삼음경의 락혈에 시술된 침 자극에 의한 NO, NOS, NE 발현 연구 (Studies on NO, nNOS, eNOS, iNOS and NE Expression by Acupuncture at SP4, KI4 and LR5)

  • 이유미;신욱;최동희;김미래;나창수;윤대환
    • Korean Journal of Acupuncture
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    • 제34권1호
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    • pp.37-46
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    • 2017
  • Objectives : The acupuncture about acupoint affects the production of NO, NOS, and NE.Local action of acupuncture is important for acupuncture treatment. To prove this, the revelation degree of NO, NOS, and NE was observed by stimulating the acupuncture at the connecting point of SP4, KI4, and LR5 in the depths of Superficial layer, Middle layer and Deep layer. Methods : Needles were inserted into rats, on each right and left sides of the connecting point, SP4, KI4 and LR5 acupoints which are the stream points of the foot meridian. After insertion, needles were retained for three minutes. After the retention, rat was sacrificed via cardiac puncture, and tissues of each SP4, KI4 and LR5 point near meridian vessel was extracted to examine the changes in the expression of NO, NOS and NE. Results : In terms of the effect in NO production, there was significant increase in the Superficial layer, Middle layer and Deep layer at KI4. In terms of the effect in NE production, there was significant decrease in the Superficial layer at SP4 and increase in the Superficial layer, Middle layer and Deep layer at LR5. In terms of the effect in nNOS production, there was significant increase in the Superficial layer, Middle layer and Deep layer at SP4 also in the Superficial layer at KI4. In terms of the effect in eNOS production, there was a significant increase in the Superficial layer, Middle layer and Deep layer at SP4, KI4 and LR5. In terms of the effect in iNOS production, there was significant increase in the Superficial layer, Middle layer and Deep layer at SP4, KI4 and LR5. Conclusions : The effect of acupuncture applied at the connecting point of six meridians of the foot on the activities of NO, NOS and NE could be observed, and it can be induced from the effect of needle stimulation on disrupted local and systemic nervous responses.

고분자전해질 LbL multilayering 처리된 섬유와 형광증백제와의 반응성 (Interaction between Polyelectrolytes Layer-by-Layer Assembled Fibers and Fluorescent Whitening Agent)

  • 심규정;이성린;진성민;류재호;윤혜정
    • 펄프종이기술
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    • 제42권4호
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    • pp.71-77
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    • 2010
  • To utilize modified pulp fibers in papermaking system, it is necessary to evaluate the interaction between modified fibers and papermaking additives. Fluorescent whitening agent (FWA) is an important additive which has been widely used for production of writing and printing paper. We modified pulp fiber surface by Layer-by-Layer multilayering of polyelectrolytes, and investigated the interaction between these fibers and FWA used in internal addition or surface treatment. Pulp fiber with cationic surface charge showed a good affinity to internal FWA. For FWA in surface sizing agent, whiteness and brightness of paper was dependent on pickup weight and polyelectrolyte type. Pulp fibers with C-starch/PSS multilayer showed better optical properties than poly-DADMAC/PSS treatment. It indicated that polyelectrolyte type in Layer-by-Layer multilayering as well as a good affinity to FWA is important to get better whiteness and brightness.

Solution-based Multistacked Active Layer IGZO TFTs

  • Kim, Hyunki;Choi, Byoungdeog
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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    • pp.351.1-351.1
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    • 2014
  • In this study, we prepared the solution-based In-Ga-Zn oxide thin film transistors (IGZO TFTs) of multistacked active layer and characterized the gate bias instability by measuring the change in threshold voltage caused by stacking. The solutions for IGZO active layer were prepared by In:Zn=1:1 mole ratio and the ratio of Ga was changed from 20% to 30%. The TFTs with multistacked active layer was fabricated by stacking single, double and triple layers from the prepared solutions. As the number of active layer increases, the saturation mobility shows the value of 1.2, 0.8 and 0.6 (). The electrical properties have the tendency such as decreasing. However when gate bias VG=10 V is forced to gate electrode for 3000 s, the threshold voltage shift was decreased from 4.74 V to 1.27 V. Because the interface is formed between the each layers and this affected the current path to reduce the electrical performances. But the uniformity of active layer was improved by stacking active layer with filling the hole formed during pre-baking so the stability of device was improved. These results suggest that the deposition of multistacked active layer improve the stability of the device.

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다층박막법을 이용한 표면 젖음성 제어 기술 동향 (Technology Trend of surface Wettability Control Using Layer-by-Layer Assembly Technique)

  • 성충현
    • 접착 및 계면
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    • 제18권4호
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    • pp.171-178
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    • 2017
  • 최근 들어, 다층박막법(Layer-by-Layer(LbL) assembly)을 이용한 표면 젖음성 제어 기술이 큰 관심을 받고 있다. 다층박막법은 고분자, 계면활성제, 나노 입자 등과 같은 다양한 재료를 이용하여 수직 구조와 표면 특성을 나노 및 마이크로 스케일로 제어할 수 있는 다기능적이며 친환경적인 제조방법이다. 본 논문에서는 다층박막법을 이용하여 표면 특성을 제어하는 기술의 최근 동향을 살펴보고자 한다. 특히, 초발수, 초친수, 초발유/초친수 LbL 표면의 제조와 응용에 대한 기술 동향과 연구 결과를 기술한다. 또한, omniphobic, 자가-치유, 지능형 및 외부 반응형 표면 등 최근 각광을 받고 있는 분야의 기본적인 원리와 제조 방법 등에 대해 소개하고자 한다.

Magnetic and Electrical Properties of the Spin Valve Structures with Amorphous CoNbZr

  • Cho, Hae-Seok
    • Journal of Magnetics
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    • 제2권3호
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    • pp.96-100
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    • 1997
  • A spin valve structure of NiO(40 nm)/Co(2 nm)/Cu(2.6 nm)/Co(x nm)/Ta(5 nm) has been investigated for the application of magnetic random access memory (MRAM). The spin valve structure exhibited very large difference in the coercivities between pinned and free layers, a relatively high GMR ratio, and a low free layer coercivity. The spin valves were prepared by sputtering and were characterized by dc 4-point probe, and VSM. The spin valves with combined free layer exhibited a maximun GMR ratio of 10.4% with a free layer coercivity of about 82 Oe. The spin valves with a single 10 nm thick a-CoNbZr free layer exhibited a GMR ratio of about 4.3% with a free layer coercivity of about 12 Oe. The GMR ratio of the spin valves increased by addition of Co between Cu and a-CoNbZr. It has been confirmed that the coercivity of free layer can be decreased by increasing the thickness of a-CoNbZr. It has been confirmed that the coercivity of free layer can be decreased by increasing the thickness of a-CoNbZr layer without losing the GMR ratio substantially, which was mainly due to high resistivity of the amorphous "layers".

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