• The Transactions of the Korean Institute of Electrical Engineers C
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• v.55 no.2
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• pp.72-75
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• 2006

A CMOS compatible Super Junction LDMOS (SJ-LDMOS) structure, which reduces substrate-assisted depletion effects, is reported. The proposed structure uses a N-buffer layer between the pillars and P-substrate to achieve global charge balance between the pillars, the N-buffer layer and the P-substrate. The new structure features high breakdown voltage, low on-resistance, and reduced sensitivity to doping imbalance in the pillars.

• Journal of Bio-Environment Control
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• v.26 no.3
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• pp.194-200
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• 2017

This study aimed to determine the suitable of harvest time on the growth and quality of baby leafy vegetables (Agastsche rugosa O. Kuntze and Lepidium sativum L.) grown on rice seedling tray in a six-layered bench system at 30cm intervals in order to exploit the space during rice growing off-season. Seedlings were grown on the rice seedling tray for 10 days after sowing with coir substrate supplied with nutrient solution at EC $1.5dS{\cdot}m^{-1}$ every 2 days prior to placing the tray on the bench, which were at $1^{st}$ (Low) layer above 20cm and $6^{th}$ (High) layer above 170cm apart from the ground. Growth and phytochemical contents were measured at 7-day and 14-day harvest time. During the culture periods, daily average of integrated solar radiation and temperature were $9.3{\sim}9.6MJ{\cdot}m^{-2}$, $27.5^{\circ}C$ in the High layer and $5.1{\sim}6.2MJ{\cdot}m^{-2}$ in average, and $26.5{\sim}26.6^{\circ}C$ in the Low layer, respectively. For A. rugosa, the highest growth was observed in the Low layer bench at a 14-day harvest time, while their plant height in the High layer was shorter and the leaf number was lower. For L. sativum, the plant height, leaf length and width, leaf number and fresh weight were higher in the Low layer. For A. rugosa, a high yield was observed with the increase in integrated temperature and integrated solar radiation, while a higher yield of L. sativum was found with the increase in integrated temperature, but not with integrated solar radiation. For A. rugosa, both polyphenol and anthocyanin contents were higher in the High layer at a 14-day harvest time. For L. sativum, polyphenol contents were higher in the High layer, whereas no significant difference in anthocyanin and flavonoid contents was observed depending on the layer and harvest time. The highest chlorophyll content showed in Low layer at a 7-day harvest time in both A. rugose and L. sativum. All of the results suggest that in terms of growth and quality, it may be better growing in the high layer for 14 days after seedling in A. rugosa, and low layer for 7 days in L. sativum.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.22 no.1
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• pp.11-14
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• 2012

The AlGaN layer has direct wide bandgaps ranging from 3.4 to 6.2 eV. Nowadays, it is becoming more important to fabricate optical devices in an UV region for the many applications. The high quality AlGaN layer is necessary to establish the UV optical devices. However, the growth of AlGaN layer on GaN layer is difficult due to the lattice mismatch and difference thermal expansion coefficient between GaN layer and AlGaN layer. In this paper, we attempted to grow the LED structure on GaN template by mixed-source HVPE method with multi-sliding boat system. We tried to find the optical and lattice transition of active layer by control the Al content in mixed-source. For the growth of epi layer, the HCl and $NH_3$ gas were flowed over the mixed-source and the carrier gas was $N_2$. The temperature of source zone and growth zone was stabled at 900 and $1090^{\circ}C$, respectively. After the growth, we performed the x-ray diffraction (XRD) and electro luminescence (EL) measurement.

• Journal of the Korean Recycled Construction Resources Institute
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• v.2 no.1
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• pp.120-127
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• 2006

The hammer-milled characteristics of waste wood materials such as lumber, plywood, particleboard(PB), MDF and railroad tic were investigated in this study. The physical and mechanical properties of recycled boards according to types of recycled particle and the mixing ratios were also studied. The hammer-milled, waste wood materials had the dimensional distributions suitable for the core layer panicle. Bending strengths of recycled boards (one layer) were shown in order of plywood, PB(laboratory-fabricated with particles used in the PB factory), lumber, tego film-overlaid plywood, MDF, waste railroad tie, PB(factory-made) and LPL-overlaid PB. Cured resin and creosote containing waste wood contributed to dimensional stability of reconstituted boards. Considering the mixing effects between lumber and plywood with recycled PB particle, lumber particle was contributive to bending strength, MOE and internal bond(IB) strength, whereas plywood particle was contributive to dimensional stability. The bending and IB strength of 3 layer boards composing only recycled waste wood particles in core layer of board were in order of lumber, plywood, PB and MDF. On the other hand, the thickness swelling was in order of PB, lumber, plywood and MDF. Bending strength of the 3 layer boards mixed with recycled PB-particle in the core layer had a decreasing tendency, as the mixing ratios of recycled PB-particles increased. The dimensional stability of 3 layer recycled board was improved as the mixing ratio of recycled PB-particle increased same as in one layer. Formaldehyde emission of boards fabricated with recycled PB-particles in the core layer of the PB was in the range of E2 grade (below 5.0mg/l).

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.281.1-281.1
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• 2016

Transition metal dichalcogenides (TMDCs) are promising layered structure materials for next-generation nano electronic devices. Many investigation on the FET device using TMDCs channel material have been performed with some integrated approach. To use TMDCs for channel material of top-gate thin film transistor(TFT), the study on high-k dielectrics on TMDCs is necessary. However, uniform growth of atomic-layer-deposited high-k dielectric film on TMDCs is difficult, owing to the lack of dangling bonds and functional groups on TMDC's basal plane. We demonstrate the effect of remote oxygen plasma pretreatment of large area synthesized few-layer MoSe2 on the growth behavior of Al2O3, which were formed by atomic layer deposition (ALD) using tri-methylaluminum (TMA) metal precursors with water oxidant. We investigated uniformity of Al2O3 by Atomic force microscopy (AFM) and Scanning electron microscopy (SEM). Raman features of MoSe2 with remote plasma pretreatment time were obtained to confirm physical plasma damage. In addition, X-ray photoelectron spectroscopy (XPS) was measured to investigate the reaction between MoSe2 and oxygen atom after the remote O2 plasma pretreatment. Finally, we have uniform Al2O3 thin film on the MoSe2 by remote O2 plasma pretreatment before ALD. This study can provide interfacial engineering process to decrease the leakage current and to improve mobility of top-gate TFT much higher.

• Nuclear Engineering and Technology
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• v.52 no.9
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• pp.2054-2063
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• 2020

The high-temperature oxidation behavior of ZrSi₂ used as a coating material for nuclear fuel cladding was investigated for developing accident-tolerant fuel cladding of light water reactors. Bulk ZrSi₂ samples were prepared by spark plasma sintering. In situ X-ray diffraction was conducted in air at 900, 1000, and 1100 ℃ for 20 h. The microstructures of the samples before and after oxidation were examined by scanning electron microscopy and transmission electron microscopy. The results showed that the oxide layer of zirconium silicide exhibited a layer-by-layer structure of crystalline ZrO₂ and amorphous SiO₂, and the high-temperature oxidation resistance was superior to that of Zircaloy-4 owing to the SiO₂ layer formed. ZrSi₂ was coated on the Zircaloy-4 tube surface using laser 3D printing, and the coated tube was oxidized for 2000 s at 1200 ℃ under a vapor/argon mixture atmosphere. The outer surface of the coated tube was hardly oxidized (10-30 ㎛), while the inner surface of the uncoated tube was significantly oxidized to approximately 300 ㎛.

• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.211.2-211.2
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• 2015

In order to investigate the effect of front channel in DAL (dual active layer) TFT (thin film transistor), we successfully fabricated DAL TFT composed of ITZO and IGZO as active layer using the solution process. In this structure, ITZO and IGZO active layer were used as front and back channel, respectively. The front channel was changed from 0.05 to 0.2 M at fixed 0.3 M IGZO of back channel. When the mol concentration of front channel was increased, the threshold voltage (VTH) was increased from 2.0 to -11.9 V and off current also was increased from 10-12 to 10-11. This phenomenon is due to increasing the carrier concentration by increasing the volume of the front channel. The saturation mobility of DAL TFT with 0.05, 0.1, and 0.2 M ITZO were 0.45, 4.3, and $0.65cm2/V{\cdot}s$. Even though 0.2 M ITZO has higher carrier concentration than 0.05 and 0.1 M ITZO, the 0.1 M ITZO/0.3 M IGZO DAL TFT has the highest saturation mobility. This is due to channel defect such as pores and pin-holes. These defect sites were created during deposition process by solvent evaporation. Due to these defect sites, the 0.1 M ITZO/0.3 M IGZO DAL TFT shows the higher saturation mobility than that of DAL TFT with front channel of 0.2 M ITZO.

• Progress in Superconductivity and Cryogenics
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• v.17 no.3
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• pp.1-4
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• 2015

Production of $MgB_2$ film on metallic Hastelloy with SiC as the buffer layer was achieved by means of hybrid physical-chemical vapor deposition technique, whereas SiC buffer layers with varied thickness of 170 and 250 nm were fabricated inside a pulsed laser deposition chamber. Superconducting transition temperature and critical current density were verified by transport and magnetic measurement, respectively. With SiC buffer layer, the reduced delaminated area at the interface of $MgB_2$-Hastelloy and the slightly increased $T_c$ of $MgB_2$ tapes were clearly noticed. It was found that the upper critical field, the irreversibility field and the critical current density were reduced when $MgB_2$ tapes were buffered with SiC buffer layer. Clarifying the mechanism of SiC buffer layer in $MgB_2$ tape in affecting the superconducting properties is considerably important for practical applications.

• Journal of the Korean Ceramic Society
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• v.52 no.1
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• pp.72-76
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• 2015

150-nm-thick In-Zn-Tin-Oxide (IZTO) films were deposited by RF magnetron sputtering after a 10 to 50-nm-thick $SiO_2$ buffer layer was deposited by plasma enhanced chemical vapor deposition (PECVD) on polyethylene terephthalate (PET) substrates. The electrical, structural, and optical properties of the IZTO/$SiO_2$/PET films were analyzed with respect to the thickness of the $SiO_2$ buffer layer. The mechanical properties were outstanding at a $SiO_2$ thickness of 50 nm, with a resistivity of $1.45{\times}10^{-3}{\Omega}-cm$, carrier concentration of $8.84{\times}10^{20}/cm^3$, hall mobility of $4.88cm^2/Vs$, and average IZTO surface roughness of 12.64 nm. Also, the transmittances were higher than 80%, and the structure of the IZTO films were amorphous, regardless of the $SiO_2$ thickness. These results indicate that these films are suitable for use as a transparent conductive oxide for transparency display devices.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.25 no.7
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• pp.491-495
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• 2012

The effects of various buffer layers on the $In_2O_3$ transparent conducting films grown on glass substrates by radio-frequency reactive magnetron sputtering were investigated. The $In_2O_3$ thin films were deposited at $400^{\circ}C$ of growth temperature and 100% of oxygen flow rate. The optical, electrical, and structural and morphological properties of the $In_2O_3$ thin films subjected to buffer layers were examined by using ultraviolet-visible spectrophotometer, Hall-effect measurements, and X-ray diffractometer, respectively. The properties of $In_2O_3$ thin films showed different results, depending on the type of buffer layer. As for the $In_2O_3$ thin film deposited on ZnO buffer layer, the average transmittance was 89% and the electrical resistivity was $7.4{\times}10^{-3}\;{\Omega}cm$. The experimental results provide a way for growing the transparent conducting film with the optimum condition by using an appropriate buffer layer.