• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.222.2-222.2
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• 2016

트랜지스터 응용 등에 관한 연구가 활발해 지면서 에너지 밴드갭이 0 eV에 가까운 그래핀 이외의 밴드 갭 조절이 가능한 MoS2 (molybdenum disulfide), BN (boron nitride), Bi2Te3 (bismuth telluride), WS2 (tungsten disulfide) 등과 같은 이차원 Transition Metal DiChalcogenides (TMDC) 물질이 반도체 물질로 각광받고 있다. 특히 MoS2의 경우 단결정 덩어리 상태에서는 약 1.3 eV의 밴드갭을 가지나 두께가 줄어들어 두 층일 경우에는 약 1.65 eV, 단일층이 되면 약 1.9 eV의 밴드갭을 가져 박막 층수에 따라 에너지 밴드갭 조절이 가능한 것으로 알려져있다. 하지만 두께 조절이 가능하면서 대면적, 고품질을 가지는 MoS2 박막 합성은 아직 제한적이라 할 수 있으며 새로운 방법 및 물질에 대한 연구가 지속적으로 이루어 지고 있다. 따라서 본 연구에서는 다양한 층수를 지니는 MoS2 합성을 위해 나노 두께의 MoS2 박막을 CF4 plasma 를 이용하여 layer etching 진행하고 CF4 plasma 100초 etching 진행한 2 layer 두께의 MoS2를 기준으로 H2S plasma를 이용하여 treatment 진행하였다. 물리적, 화학적 분석은 Raman spectroscopy, XPS(X-ray Photoelectron Spectroscopy), AFM (Atomic Force Microscopy) 등을 이용해 진행하였고 이를 통해 MoS2 layer 감소 및 damage recovery 등을 확인하였다.

• Journal of Broadcast Engineering
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• v.13 no.4
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• pp.452-462
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• 2008

In this paper, we address issues associated with the real-time implementation of the MPEG-1/2 Layer-II (or MUSICAM) and MPEG-4 ER-BSAC decoders for Digital Multimedia Broadcasting (DMB) on TMS320C64x+ that is a fixed-point DSP processor with a clock speed of 330 MHz. To achieve the real-time requirement, they should be optimized in different steps as follows. First of all, a C-code level optimization is performed by sharing the memory, adjusting data types, and unrolling loops. Next, an algorithm level optimization is carried out such as the reconfiguration of bitstream reading, the modification of synthesis filtering, and the rearrangement of the window coefficients for synthesis filtering. In addition, the C-code of a synthesis filtering module of the MPEG-1/2 Layer-II decoder is rewritten by using the linear assembly programming technique. This is because the synthesis filtering module requires the most processing time among all processing modules of the decoder. In order to show how the real-time implementation works, we obtain the percentage of the processing time for decoding and calculate a RMS value between the decoded audio signals by the reference MPEG decoder and its DSP version implemented in this paper. As a result, it is shown that the percentages of the processing time for the MPEG-1/2 Layer-II and MPEG-4 ER-BSAC decoders occupy less than 3% and 11% of the DSP clock cycles, respectively, and the RMS values of the MPEG-1/2 Layer-II and MPEG-4 ER-BSAC decoders implemented in this paper all satisfy the criterion of -77.01 dB which is defined by the MPEG standards.

• Journal of the Korean Vacuum Society
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• v.7 no.1
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• pp.59-65
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• 1998

Multi-layer diamond-like carbon (DLC) films were deposited by 13.56 MHz r.f. PACVD method. Multi-layer DLC film was composed of 2.5 $mu extrm{m}$ thick pure DLC filml and 0.2$\mu\textrm{m}$ thick Si incorporated DLC (Si-DLC) film as a surface layer. Tribological behaviors of the multi-layer DLC film were investigated with a ball-on-disk type tribometer in ambient atmosphere using AISI 52100 steel ball. Low friction coefficient (<0.1) period increased with increasing the Si content in the surface Si-DLC film. The wear rate after 44,000 cycles and 158,400 cycles were the $2.5\times10^{-8}\sim1.8\times10^{-7}\textrm{mm}^3$/rev. and $7.1\times10^{-9}\sim1.8\times10^{-8}\textrm{mm}^3$/rev.,respectively. The wear rate of the multi-layer DLC film after 158,400 cycles was about 2 times smaller than that of pure DLC films of 2.7 $\mu\textrm{m}$ thickness. This high wear resistance and low friction coefficient was caused by the formation of Si oxide layer on the wear scar surface, as confirmed by the debris composition analysis. It was further shown that this si oxide debris layer on the wear scar surface is formed again even after removing the debris of the steel ball, which maintain the low friction coefficient between multi-layer DLC films and steel ball.

• The Journal of the Korea institute of electronic communication sciences
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• v.6 no.2
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• pp.171-179
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• 2011

Feistel and SPN are the two main structures in a block cipher. Feistel is a symmetric structure which has the same structure in encryption and decryption, but SPN is not a symmetric structure. Encrypt round function and decrypt round function in SPN structure have three parts, round key addition and substitution layer with S-box for confusion and permutation layer for defusion. Most SPN structure for example ARIA and AES uses 8 bit S-Box at substitution layer, which is vulnerable to Square attack, Boomerang attack, Impossible differentials cryptanalysis etc. In this paper, we propose a SPN which has a symmetric structure in encryption and decryption. The whole operations of proposed algorithm are composed of the even numbers of N rounds where the first half of them, 1 to N/2 round, applies a right function and the last half of them, (N+1)/2 to N round, employs an inverse function. And a symmetry layer is located in between the right function layer and the inverse function layer. The symmetric layer is composed with a multiple simple bit slice involution S-Boxes. The bit slice involution S-Box symmetric layer increases difficult to attack cipher by Square attack, Boomerang attack, Impossible differentials cryptanalysis etc. The proposed symmetric SPN block cipher with bit slice involution S-Box is believed to construct a safe and efficient cipher in Smart Card and RFID environments where electronic chips are built in.

• Journal of the Korean Society of Radiology
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• v.14 no.1
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• pp.39-44
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• 2020

The purpose of this study was learning about chest X-ray image classification and accuracy research through Deep Learning using big data technology with Convolution Neural Network. Normal 1,583 and Pneumonia 4,289 were used in chest X-ray images. The data were classified as train (88.8%), validation (0.2%) and test (11%). Constructed as Convolution Layer, Max pooling layer size 2×2, Flatten layer, and Image Data Generator. The number of filters, filter size, drop out, epoch, batch size, and loss function values were set when the Convolution layer were 3 and 4 respectively. The test data verification results showed that the predicted accuracy was 94.67% when the number of filters was 64-128-128-128, filter size 3×3, drop out 0.25, epoch 5, batch size 15, and loss function RMSprop was 4. In this study, the classification of chest X-ray Normal and Pneumonia was predictable with high accuracy, and it is believed to be of great help not only to chest X-ray images but also to other medical images.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.430-430
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• 2012

The surface recombination velocity of the silicon solar cell could be reduced by passivation with insulating layers such as $SiO_2$, SiNx, $Al_2O_3$, a-Si. Especially, the aluminium oxide has advantages over other materials at rear surface, because negative fixed charge via Al vacancy has an additional back surface field effect (BSF). It can increase the lifetime of the hole carrier in p-type silicon. The aluminium oxide thin film layer is usually deposited by atomic layer deposition (ALD) technique, which is expensive and has low deposition rate. In this study, ICP-assisted reactive magnetron sputtering technique was adopted to overcome drawbacks of ALD technique. In addition, it has been known that by annealing aluminium oxide layer in nitrogen atmosphere, the negative fixed charge effect could be further improved. By using ICP-assisted reactive magnetron sputtering technique, oxygen to nitrogen ratio could be precisely controlled. Fabricated aluminium oxy-nitride (AlON) layer on silicon wafers were analyzed by x-ray photoelectron spectroscopy (XPS) to investigate the atomic concentration ratio and chemical states. The electrical properties of Al/($Al_2O_3$ or $SiO_2/Al_2O_3$)/Si (MIS) devices were characterized by the C-V measurement technique using HP 4284A. The detailed characteristics of the AlON passivation layer will be shown and discussed.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07b
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• pp.723-727
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• 2003

[ $Sr_xBa_{1-x}Nb_2O_6$ ] (SBN, $0.25{\leq}x{\leq}0.75$) ceramic is a ferroelectric material with tetragonal tungsten bronze (TTB) type structure, which has a high pyroelectric coefficient and a nonlinear electro-optic coefficient value. In spite of its advantages, SBN has not been investigated well compared to other ferroelectric materials with perovskite structure. In this study, SBN thin film was manufactured by ion beam sputtering technique using the prepared SBN target in $Ar/O_2$ atmosphere. SBN30 thin film of $1000{\AA}$ was pre-deposited as a seed layer on $Pt(100)/TiO_2/SiO_2/Si$ substrate followed by SBN60 deposition up to $3000{\AA}$ in thickness. As-deposited SBN60/SBN30 layer was heat-treated at different temperatures of 650, 700, 750, and $800^{\circ}C$ in air, respectively The crystallinity and orientation behavior as well as electric properties of SBN60/SBN30 multi-layer were examined. The deposited layer was uniform and the orientation was shown primarily along (001) plane from XRD pattern. There was no difference in the crystal structure with heat-treatment temperature, but the electric properties depended on the heating temperature and was the best at $750^{\circ}C$. In electric properties of Pt/SBN60/SBN30/Pt thin film capacitor prepared, the remnant polarization (2Pr) value was $15{\mu}C/cm^2$, the coercive field (Ec) 75 kV/cm, and the dielectric constant 1075, respectively.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.480-480
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• 2011

양극산화(anodization)는 금속을 전기화학적으로 산화시켜 금속산화물로 만드는 기술로서 최근 다양한 크기의 나노 구조를 제조하는 기술로 각광받고 있으며, 이러한 기술에 의하여 얻어지는 anodic aluminum oxide(AAO)는 magnetic data storage, optoelectronic device, sensor에 적용될 수 있는 nano device 뿐만 아니라 nanostructure를 제조하기 위한 template 및 mask로써 최근 광범위 하게 연구되고 있다. 또한, AAO는 Al2O3의 단단한 구조를 가진 무기재료이므로 solid mask로써 다른 porous materials 보다 뛰어난 특성을 갖고 있다. 또한 electron-beam lithography 및 block co-polymer 에 의한 patterning 과 비교하여 매우 경제적이며, 재현성이 우수할 뿐만 아니라 대면적에서 나노 구조의 크기 및 형상제어가 비교적 쉽기 때문에 널리 사용되고 있다. 그러나, AAO 형성 시 생기게 되는 반구형 모양의 barrier layer는 물질(substance)과 기판과의 direct physical and electrical contact을 방해하기 때문에 해결해야 할 가장 큰 문제점 중 하나로 알려져 있다. 따라서 본 연구에서는 실리콘 기판위의 형성된 AAO의 barrier layer를 Cl/BCl3 gas mixture에서 Neutral Beam Etching (NBE)과 Ion Beam Etching (IBE) 로 각각 식각한 후 그 결과와 비교하였다. NBE와 IBE 모두 Cl2/BCl3 gas mixture에서 BCl3 gas의 첨가량이 60% 일 경우 etch rate이 가장 높게 나타났고, optical emission spectroscopy (OES)로 Cl2/BCl3 플라즈마 내의 Cl radical density와 X-ray photoelectron spectroscopy (XPS)로 AAO 표면 위를 관찰한 결과 휘발성 BOxCly의 형성이 AAO 식각에 크게 관여함을 확인 할 수 있었다. 또한, NBE와 IBE 실험한 다양한 Cl2/BCl3 gas mixture ratio 에서 AAO가 식각이 되지만, 이온빔의 경우 나노사이즈의 AAO pore의 charging에 의해 pore 아래쪽의 위치한 barrier layer를 어떤 식각조건에서도 제거하지 못하였다. 하지만, NBE에서는 BCl3-rich Cl2/BCl3 gas mixture인 식각조건에서 AAO pore에 휘발성 BOxCly를 형성하면서 barrier layer를 제거할 수 있었다.

• Korean Journal of Materials Research
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• v.18 no.8
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• pp.422-426
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• 2008

The effects of an addition of $ZrO_2$ on the microstructure and electrical properties of MgO films as a protective layer for AC plasma display panels were investigated. MgO + a 200 ppm $ZrO_2$ protective layer prepared by e-beam evaporation exhibited a secondary electron emission coefficient ($\gamma$) that was improved by 21% compared to that of a pure MgO protective layer. The relative density and Vickers hardness increased with a further addition of $ZrO_2$. These results suggest that the discharge properties and optical properties of MgO protective layers are closely related to the relative density and Vickers hardness. The good optical and electrical properties of $\gamma$, at 0.080, a grain size of $19\;{\mu}m$ and an optical transmittance of 91.93 % were obtained for the MgO + 200 ppm $ZrO_2$ protective layer sintered at $1700^{\circ}C$ for 5 hrs.

• Korean Journal of Materials Research
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• v.11 no.6
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• pp.441-447
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• 2001

A study on the TiN coating layer in small holes on the Purpose of die-casting dies application has been performed with a PACVD process. For the hole having diameter of 4 mm. the uniform TiN coating layer in the hole to the depth of 20 mm was achieved using DC pulsed power source. To understand the forming mechanism of TiN coating layer, plasma diagnosis on Ti, $N_{2}^{+}$ and A $r^{+}$ emissions was carried out during plasma coaling process by optical emirssion spectroscopy. When the duty ratio was equal or over 50%, the Peaks of Ti,$ N_{2}^{+}$ and A $r^{+}$ emission were obviously observed. While duty ratio was equal or under 28.6%, no peaks for Ti, $N_{2}^{+}$ and A $r^$ were observed and the formation of TiN coating layer was rarely observed. For the coating in 4 mm hole diameter, the coating layer with bipolar process was two times deeper than that with unipolar process.