Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Effect of Seed-layer on the Crystallization and Electric Properties of SBN60 Thin Films

SBN60 박막의 결정화 및 전기적 특성에 관한 씨앗층의 영향

  • Jang, Jae-Hoon (School of Metallurgical and Materials Engineering, Yeungnam Univ.) ;
  • Lee, Dong-Gun (School of Metallurgical and Materials Engineering, Yeungnam Univ.) ;
  • Lee, Hee-Young (School of Metallurgical and Materials Engineering, Yeungnam Univ.) ;
  • Jo, Sang-Hee (Department of Inorganic Materials Engineering, Kyungpook National Univ.)
  • 장재훈 (영남대학교 재료금속공학부) ;
  • 이동근 (영남대학교 재료금속공학부) ;
  • 이희영 (영남대학교 재료금속공학부) ;
  • 조상희 (경북대학교 무기재료공학과)
  • Published : 2003.07.10
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Abstract

[ $Sr_xBa_{1-x}Nb_2O_6$ ] (SBN, $0.25{\leq}x{\leq}0.75$) ceramic is a ferroelectric material with tetragonal tungsten bronze (TTB) type structure, which has a high pyroelectric coefficient and a nonlinear electro-optic coefficient value. In spite of its advantages, SBN has not been investigated well compared to other ferroelectric materials with perovskite structure. In this study, SBN thin film was manufactured by ion beam sputtering technique using the prepared SBN target in $Ar/O_2$ atmosphere. SBN30 thin film of $1000{\AA}$ was pre-deposited as a seed layer on $Pt(100)/TiO_2/SiO_2/Si$ substrate followed by SBN60 deposition up to $3000{\AA}$ in thickness. As-deposited SBN60/SBN30 layer was heat-treated at different temperatures of 650, 700, 750, and $800^{\circ}C$ in air, respectively The crystallinity and orientation behavior as well as electric properties of SBN60/SBN30 multi-layer were examined. The deposited layer was uniform and the orientation was shown primarily along (001) plane from XRD pattern. There was no difference in the crystal structure with heat-treatment temperature, but the electric properties depended on the heating temperature and was the best at $750^{\circ}C$. In electric properties of Pt/SBN60/SBN30/Pt thin film capacitor prepared, the remnant polarization (2Pr) value was $15{\mu}C/cm^2$, the coercive field (Ec) 75 kV/cm, and the dielectric constant 1075, respectively.

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