• Title/Summary/Keyword: layer 2

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Effect Of The Separating Shear Layer on the Flow Over an Axisymmetric Backward-Facing Step (박리전단층이 축대칭 하향단흐름에 미치는 영향)

  • 부정숙;김경천;양종필
    • Transactions of the Korean Society of Mechanical Engineers
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    • v.19 no.4
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    • pp.1102-1115
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    • 1995
  • An experimental study on the flow over the axisymmetric backward-facing step was carried out. The purpose of the present study is to investigate the effect of the boundary layer thickness at the separation point on the reattachment length and to understand the structure of the recirculating flows. Local mean and fluctuating velocity components were measured in the separating and reattaching axisymmetric turbulent boundary layer over the wall of convex cylinder placed in a water tunnel by using 2-color 4-beam fiber optics laser Doppler velocimetry. The study demonstrated that the reattachment length increases with increasing boundary layer thickness. It was also observed that the reverse flow velocity and turbulent kinetic energy decrease with an increase in the momentum thickness at the separation point. The measured velocity field suggests that the boundary layer thickness at the separation can affect definitely on the formation of corner eddy.

One-Dimensional Model for Simulations of Atmospheric Mixed Layer : Application to Dukyang Bay Area (대기혼합층 모사를 위한 1차원 수치모형 : 득량만에서의 적용)

  • Kim, Yoo-Keun;Moon, Sung-Euii;Ahn, Joong-Bae
    • Journal of Environmental Science International
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    • v.6 no.5
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    • pp.425-435
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    • 1997
  • One-dimensional thermodynamic mixed layer model to stimulate variations of meteorological variables wish the planetary boundary layer has been developed In this study. This model consists of 2 prognostic equations, which can predict the variations of potential temperature and mixing ratio and several diagnostic equations. Physics within the surface and mixed layers has been considered seperately in the model. For the variations of the model, Its result has been analysed and compared with observated data over Ole Dukyang Bay for one day, July 23, 1992. The simulated height of mixed layer is comparable to the observation and the variations of temperature and mixing ratio in the mixed layer are also reasonably simulated. Those Imply that the model responds appropriately with given boundary conditions In sprite of Its simplilfied assumptions applied to the model and insufficient boundary and Initial conditions.

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Formation of TiC Composite Layer on Ductile Iron by Laser Surface Modification (레이저 처리에 의한 구상흑연주철의 TiC 복합화에 관한 연구)

  • Kim, Woo-Yeol;Park, Heung-Il
    • Journal of Korea Foundry Society
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    • v.18 no.6
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    • pp.593-603
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    • 1998
  • Commercial ductile iron was coated with titanium and aluminum powders by low pressure plasma spraying and then irradiated with a $CO_2$ laser to produce anti-corrosive TiC composite layer. TiC carbides were precipitated homogeneously in a laser alloyed layer by in-situ reaction between carbon existed in the base metal and titanium with thermal sprayed coating. The formation of gas pores and brittle limited mixing zone with ledeburite microstructure in TiC composite layer were surpressed by the complementary alloying of aluminum. The hardness of TiC composite layer obtained by addition of titanium and aluminum was between 600 and 660 Hv, which was three times as high as the hardness of ferritic ductile iron. From the results of isothermal oxidation at 1123k for 24 hours in air, high temperature oxidation resistance of the TiC composite layer with aluminum was improved and doubled when compared with the TiC composite layer without aluminum.

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The Microscopic Surface Properties of Rhodamine Derivatives in EL System (EL시스템의 Rhodamine 유도체화합물의 표면특성)

  • 박수길;조성렬;손원근;조병호;임기조;이주성
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 1997.04a
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    • pp.265-268
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    • 1997
  • Electroluminescent(EL) devices are constructed using multilayer organic thin film. A cell structure of glass substrate/Indium-Tinoxide/TPD as a hole transporting layer/Alq3+Rhodamine 101 perchrolate(Red3) as an emitting layer/Alq3 as an electrron transporting layer/Al as an electrode was employed. Optimal thickness of emitting layer in EL cell was performed from the viewpoint of the electronics properties of emitting layers. The general vapor-deposition method was used to control the thickness of omitting layer in EL devices and electro-optical characteristics were measured. It is clarified that controlling thickness of emitting layer in vapor-deposition film had an effect on the change of carrier injection and EL spectrum. The intensity of red omission with luminance of 81cd/$m^2$ was achived at 11V driving voltage. The surface morphology of emitting layer in EL devices was investigated.

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Daylight background radiation modeling for the system of ocean-atmosphere with multi-layer clouds

  • Sushkevich, Tamara A.;Strelkov, Sergey A.;Volkovich, Alexander N.;Kulikov, Alexey K.;Maksakova, Sveta V.
    • Proceedings of the KSRS Conference
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    • v.2
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    • pp.680-683
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    • 2006
  • A one-dimensional planar model is considered of the atmosphere with multi-layer clouds illuminated by a mono-directional parallel flux of solar radiation. A new approach is proposed to radiation transfer modeling and daylight background formation for the atmosphere with such clouds that is represented as a heterogeneous multi-layer system each layer of which is described by different optical characteristics. The influence functions of each layer are determined by solutions of the radiation transfer boundary problem with an external monodirectional wide flux while the contribution of multiple scattering and absorption in the layer is taking into account.

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The characteristics of Efficiency through HIT layer thickness (HIT 층 두께 변화를 통한 태양전지 효율 특성)

  • Kim, Moo-Jung;Pyeon, Jin-Ho;Yi, Jun-Sin
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2010.06a
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    • pp.232-232
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    • 2010
  • Simulation Program (AFORS-HET 2.4.1) was used, include the basic structure of crystalline silicon thin film as above, under the intrinsic a-Si:H films bonded symmetrical structure (Symmetrical structure) were used. The structure of ITO, a-Si p-type, intrinsic a-Si, c-Si, intrinsic a-Si, a-Si n-type, metal (Al) layer has one of the seven. When thickness for each layer was given the change, the changes of a-Si p-type layer and the intrinsic a-Si layer on top had an impact on efficiency. Efficiency ratio of p-type a-Si:H layer thickness was sensitive to, especially a-Si: H layer thickness is increased in a rapid decrease in Jsc and FF, and efficiency was also decreased.

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Dielectric Properties and a Equivalent Circuit of ZnO-Based Varistor (ZnO 바리스터의 유전특성과 등기회로)

  • Rho, Il-Soo;Kang, Dae-Ha
    • The Transactions of The Korean Institute of Electrical Engineers
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    • v.56 no.12
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    • pp.2166-2172
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    • 2007
  • In this study a low-signal equivalent circuit based on the Double Schottky Barrier model is proposed for ZnO-based varistor. Since pin-lead inductance and stray capacitance are considered in pin-lead type ZnO varistor these inductance and capacitance could be removed from the experimental dielectric data of the varistor. According to the equivalent circuit simulation results the higher the varistor-voltage of varistor sample the capacitance of dielectric layer is larger, and the capacitances of semiconducting layer and depletion layer are smaller, while the parallel resistances of semiconducting layer and depletion layer are more larger values. Spectra of the dielectric loss factor $tan{\delta}$ show 2 peaks in low frequency and high frequency regions respectively. The low-frequency peak is due to the relaxation by deep donors and the high-frequency peak is due to the relaxation by shallow donors. Above results are well consistent with the theoretical mechanism of ZnO varistor.

Epitaxial Growth of $\beta$-SiC Thin Films on Si(100) Substrate without a Carburized Buffer Layer

  • Wook Bahng;Kim, Hyeong-Joon
    • The Korean Journal of Ceramics
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    • v.3 no.3
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    • pp.163-168
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    • 1997
  • Most of heteroepitaxial $\beta$-SiC thin films have been successfully grown on Si(100) adapting a carburizing process, by which a few atomic layers of substrate surface is chemically converted to very thin SiC layer using hydrocarbon gas sources. Using an organo-silicon precursor, bis-trimethylsilymethane (BTMSM, [$C_7H_{20}Si_2$]), heteropitaxial $\beta$-SiC thin films were successfully grown directy on Si substrate without a carburized buffer layer. The defect density of the $\beta$-SiC thin films deposited without a carburized layer was as low as that of $\beta$-SiC films deposited on carburized buffer layer. In addition, void density was also reduced by the formation of self-buffer layer using BTMSM instead of carburized buffer layer. It seems to be mainly due to the characteristic bonding structure of BTMSM, in which Si-C was bonded alternately and tetrahedrally (SiC$_4$).

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The study on Red device using PBD as a Hole Blocking Layer (PBD를 Hole Blocking Layer로 이용한 적색발광의 EL 소자 제작에 관한 연구)

  • Kang, Min-Woong;Kim, Jong-Sung
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2002.11a
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    • pp.499-501
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    • 2002
  • 본 연구에서는 ETL층으로 널리 알려져 있는 PBD(2-(4-biphenyl)-5-(4-tert-butylphenyl) -1.3,4oxadiazole)를 HBL(Hole-blocking layer) 물질로 이용 하고 Nile red를 사용하여 적색 발광의 EL(electroluminescence) 소자를 제작 평가하였다. 일반적인 유기 EL 소자의 구조인 Anode/HTL(Hole Transport Layer)/ETL(Electron Transport Layer)/Cathode로 이루어져 있다. 여기에 HTL과 ETL사이에 HBL를 추가하여 EL 소자의 성능을 향상 시킬 수 있으면, 이러한 구조의 최종 소자를 제작 EML(emitting layer; Nile red)의 두께 및 임계전압을 달리 하여 소자 의 특성을 평가 연구 하였다.

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Reduction of Skin Friction Force for Turbulent Boundary Layer (난류 경계층의 표면 마찰력 감소화)

  • Kim, Si-Young
    • Journal of Fisheries and Marine Sciences Education
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    • v.5 no.2
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    • pp.128-137
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    • 1993
  • This paper presents a new concept to reduce turbulent frictional drag by injecting micro-bubble into buffer layer of turbulent boundary layer on flat plate. The buffer layer of boundary was specified by minus velocity gradient of law of the wall. When the buffer layer region of turbulent boundary layer is filled with micro-bubble of air and viscous of the region is kept low, the velocity profile in the region should be changed substantially. Then the Reynolds stress in the buffer layer region becomes less, which guide to higher velocity gradient there. It results in reduction of velocity gradient at the viscous sublayer, which gives the reduction of shear stress at the wall.

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