• Proceedings of the IEEK Conference
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• 2009.05a
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• pp.225-227
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• 2009

International standard specification, H.264/SVC improved from H.264/AVC, is set up so as to promote free use of huge multimedia data in various channel environments.;H.264/AVC is a international standard speicification for video compression, adopted and commercialized as standard for DMB broadcasting by JVT of ISO/IEC MPEG and ITU-T VCEG. SVC standard uses 'intra/inter prediction' in AVC as well as 'inter-layer intra prediction', 'inter-layer motion prediction' and 'inter-layer residual prediction' to improve efficiency of encoding. Among prediction technologies, 'inter-layer intra prediction' is to use co-located block of up sampled sublevels as a prediction signal. At this time, application of interpolation is one of the most important factors to determine encoding efficiency. SVC's currently using poly-phase FIR filter of 4-tap and 2-tap respectively to luma components. This paper is written for the purpose of analyzing encoding performance according to the interpolation. For this purpose, we applied poly-phase FIR filter of '2-tap', '4-tap' and '6-tap' respectively to luma components and then measured bit-rate, PNSR and running time of interpolation filter. We're expecting that the analysis results of this paper will be utilized for effective application of interpolation filter. SVC standard uses 'intra/inter prediction' in AVC as well as 'inter-layer intra prediction', 'inter-layer motion prediction' and 'inter-layer residual prediction' to improve efficiency of encoding.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.346.1-346.1
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• 2014

Porous nano crystalline $TiO_2$ is currently used as a working electrode in a dye-sensitized solar cell (DSSC). The conventional working electrode is comprised of absorption layer (particle size:~20 nm) and scattering layer (particle size:~300 nm). We inserted window layer with 10 nm particle size in order to increase transmittance and specific surface area of $TiO_2$. The electrochemical impedance spectroscope analysis was conducted to analysis characterization of the electronic behavior. The Bode phase plot and Nyquist plot were interpreted to confirm the internal resistance caused by the insertion of window layer and carrier lifetime. The photocurrent that occurred in working electrode, which is caused by rise in specific surface area, increased. Accordingly, it was found that insertion of window layer in the working electrode lead to not only effectively transmitting the light, but also increasing of specific surface area. Therefore, it was concluded that insertion of window layer contributes to high conversion efficiency of DSSCs.

• Korean Journal of Materials Research
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• v.11 no.9
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• pp.802-809
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• 2001

Electroplating is an attractive alternative deposition method for copper with the need for a conformal and conductive seed layer In addition, the Cu seed layer should be highly pure so as not to compromise the effective resistivity of the filled copper interconnect structure. This seed layer requires low electrical resistivity, low levels of impurities, smooth interface, good adhesion to the barrier metal and low thickness concurrent with coherence for ensuring void-free fill. The electrical conductivity of the surface plays an important role in formation of initial Cu nuclei, Cu nucleation is much easier on the substrate with higher electrical conductivities. It is also known that the nucleation processes of Cu are very sensitive to surface condition. In this study, copper seed layers deposited by magnetron sputtering onto a tantalum nitride barrier layer were used for electroplating copper in the forward pulsed mode. Prior to electroplating a copper film, the Cu seed layer was cleaned by plasma H$_2$ and $N_2$. In the plasma treatment exposure tome was varied from 1 to 20 min and plasma power from 20 to 140W. Effects of plasma pretreatment to Cu seed/Tantalum nitride (TaN)/borophosphosilicate glass (BPSG) samples on electroplating of copper (Cu) films were investigated.

• Journal of Electrochemical Science and Technology
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• v.2 no.4
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• pp.193-197
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• 2011

The influences of the thickness and microstructure of Fe layer on the electrochemical performances of Fe/Si multilayer thin film anodes were investigated. The Fe/Si multilayer films were prepared by electron beam evaporation, in which Fe layer was deposited with/without simultaneous bombardment of Ar ion. The kinetics of Li insertion/extraction reactions in the early stage are slowed down with increasing the thickness of Fe layer, but such a slowdown seems to be negligible for thin Fe layers less than about $500{\AA}$. When the Fe layer was deposited with ion bombardment, even the $300{\AA}$ thick Fe layer significantly suppress Li diffusion through the Fe layer. This is attributed to the dense microstructure of Fe layer, induced by ion beam assisted deposition (IBAD). It appears that the Fe/Si multilayer films prepared with IBAD show good cyclability compared to the film deposited without IBAD.

• Korean Journal of Materials Research
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• v.12 no.9
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• pp.718-723
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• 2002

$Ti_{1-x}$ $Al_{ x}$N thin films as barrier layer for memory devices application were deposited by reactive magnetron sputtering. The crystallinity, micro-structure, oxidation resistance and oxidation mechanism of films were investigated as a function of Al content. Lattice parameter and grain size of thin films were decreased with increasing the Al content Oxidation of the film with higher Al content is slow and then, total oxide thickness is thinner than that of lower Al content film. Oxide layer formed on the surface is AlTiNO layer. Oxidation of $Ti_{1-x}$ /$Al_{x}$ N barrier layer is diffusion limited process and thickness of oxide layer with oxidation time increased with a parabolic law. The activation energy of oxygen diffusion, Ea and diffusion coefficient, D of $Ti_{0.74}$ /X$0.74_{0.26}$N film is 2.1eV and $10^{-16}$ ~$10^{-15}$ $\textrm{cm}^2$/s, respectively. $_Ti{1-x}$ /$Al_{x}$ XN barrier layer showed good oxidation resistance.

• Journal of the Korean Vacuum Society
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• v.12 no.4
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• pp.214-217
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• 2003

In this study, we prepared ZnO thin film on $SiO_2$/Si substrate by FTS (Facing Targets Sputtering) apparatus which can reduce damage on the thin film because the bombardment of high-energy Particles such as ${\gamma}$-electron can be restrained. And, properties of thin filnl grown with ZnO buffer-layer which can be suppress initial growth layer was investigated. The crystalline and the c-axis preferred orientation of ZnO thin film was also investigated by XRD. As a result, we noticed that the ZnO thin film has a good crystallographic characteristic at thickness of ZnO buffer layer 10, 20 nm and working pressure 1 mTorr.

• The Korean Journal of Ceramics
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• v.1 no.3
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• pp.160-164
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• 1995

Mechanical and chemical tests were performed on $Zro_2 \cdot SiO_2$ glass fibers manufactured by the sol-gel method and E-glass fibers-reinforced cement composites in order to investigate the interactions between glass fibers and cement matrices. Chemical attack leads to corrosion of the glass fiber surfaces. In the corrosion reactions, the surface of $30ZrO_2 \cdot 70 SiO_2$ glass fibers developed a densified concentric layer, which consists of glass corrosion products with much higher Zr and lower Si than the fresh glass fiber. The layer of reaction product is regarded to stiffen the cement matrices and provide a useful improvement to the mechanical properties. The addition of $ZrO_2$ content increases the corrosion resistance of glass fibers in cement by forming a passivating layer on the surface of glass fibers.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.19 no.8
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• pp.775-779
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• 2006

In this study, sputtered $Al_2O_3$ thin films were evaluated as a passivation layer in the process of InGaN-based blue LEDs in order to improve the brightness of LED lamps. In terms of packaged LED lamps, lamps with $Al_2O_3$ passivation layer emanated higher brightness than those with $SiO_2$ passivation layer, and LED lamps with 90 nm $Al_2O_3$ passivation layer were the brightest among four kinds of lamps. Although lamps with $Al_2O_3$ passivation had a slight increase in operating voltage, their brightness was improved about 13.6 % compare to the lamps made of conventional LEDs without the changes of emitting wavelength.

• Electrical & Electronic Materials
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• v.10 no.10
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• pp.1016-1021
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• 1997

Magneto resistance properties in spin-valve sandwiches with various thickness of nanmagnetic layer in contact with the ferromagnetic NiFe film were investigated. The NiFe layer in contact with the NiO film was pinned by strongly exchange-biased coupling and the free NiFe layer at the film surface induced a sharp change in the magnetoresistance at -5~15Oe due to small coercivity. The NiO/NiFe/Cu/NiFe film showed a magnetoresistance ratio in the range of 2.3~2.9% and a field sensitivity above 2.2%/Oe with various of nonmagnetic layer. The NiO/NiFe/Cu/NiFe film of the field sensitivity above 2.2%/Oe suggests stang possibility of magnetic sensor matter.

• Journal of the Korean Electrochemical Society
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• v.5 no.4
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• pp.192-196
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• 2002

Ionic liquids based on l-ethyl-3-methylimidazolium cation $(EMI^+)$ and inorganic or organic anions containing fluorine atoms were applied to electrolyte materials for double-layer capacitors. The double-layer capacitors composed of a pair of activated carbon electrodes and an ionic liquid selected from $EMIBF_4,\; EMINbF_6,\;EMITaF_6,\;EMICF_3SO_3,\;EMI(CF_3SO_2)_2N,\;and\;EMI(C_2F_5SO_2)_2N$ showed inferior low-temperature characteristics to those of a conventional nonaqueous electrolyte based on propylene carbonate (PC) solvent. On the other hand, the capacitor using $EMIF{\cdot}2.3HF$ showed excellent low-temperature characteristics due to its high conductivity at low temperatures, however, it had a lower working voltage $(\~2V)$ than the conventional nonaqueous counterpart $(\~3V)$.