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Restoration of Antique (Sam-Sae Buddhistic Painting) In Song-Kwang Temple (전남 승주군 송광사 승보전 유물(삼세불화)보수)

  • Cheon, Kyeong-Mee;Cheon, Cheol
    • Journal of the Korean Wood Science and Technology
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    • v.27 no.3
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    • pp.82-90
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    • 1999
  • The buddhistic painting of Song-Kwang temple in Seungjoo-gun, Chonnam, Korea is not known in chronicle, but it could be estimated to works in the early 19th century through it's remaining records and qualities of materials. And it was analysed the qualities of materials consisting of pigment layer, silken-ground layer and support layer in order to preserve buddhistic painting, made back-adherent paper of the support layer proper to it, tested its compatibility, and then concluded as follows. 1. The section structures of buddhistic painting is consisted of the pigment layer, silken-ground layer of silk and the support layer of Korean hand made paper, it could be recognized that buddhistic painting in 19th century was basically composed of the pigment layer, the silken-ground layer and the support layer. Moreover the pigment layer and the silken-ground layer got adhered with glue, and sheets of support layers got back adhered with paste. 2. The support layer of buddhistic painting consisted of 5 layers and two kinds of paper were used for them. The first and second layers were composed of Korean hand made paper made of pure paper mulberry bast fibers, and the rest of them of paper that paper mulberry bast fibers were mixed into recycled hemp fibers. Though it is difficult to assert without the security of more data, finding out the then situation through the qualities of materials, it was presumed that the society in 19th century was suffered from economical difficulties and the operation of the paper industry of temples was rather difficult and so low-qualitative recycled hemp fibers might used for back-adherent paper. 3. Considering tension between silken-ground layers and support layers of this materials, newly made back-adherent paper was used for repair, and then I could conform that it was proper to back-adherent paper for repair.

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Effects of Soil Hardness on the Root Distribution of Pinus rigida Mill. Planted in Association with Sodding Works on the Denuded Land (사방시공지(砂防施工地)에 있어서 리기다소나무의 수근(樹根)의 분포(分布)에 미치는 토양견밀도(土壤堅密度)의 영향(影響))

  • Cho, Hi Doo
    • Journal of Korean Society of Forest Science
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    • v.56 no.1
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    • pp.66-76
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    • 1982
  • Soil harness represents such physical properties as porosity, amount of water, bulk density and soil texture. It is very important to know the mechanical properties of soil as well as the chemical in order to research the fundamental phenomena in the growth and the distribution of tree roots. The writer intended to grip soil hardness by soil layer and also to grasp the root distribution and the correlation between soil hardness and the root distribution of Pinus riguda Mill. planted on the denuded hillside with sooding works by soil layer on soil profile. The site investigated is situated at Peongchang-ri 13, Kocksung county, Chon-nam Province. The area is consisted of 3.63 ha having on elevation of 167.5-207.5 m. Soil texture is sandy loam and parant rock in granite. Average slope of the area is $17^{\circ}-30^{\circ}$. Soil moisture condition is dry. Main exposure of the area is NW or SW. The total number of plots investigated was 24 plots. It divided into two groups by direction each 12 plots in NW and SW and divided into three groups by the position of mountain plots in foot of mountain, in hillside, and in summit of mountain, respectively. Each sampling tree was selected as specimen by purposive sampling and soil profile was made at the downward distance of 50cm form the sampling tree at each plot. Soil hardness, soil layer surveying, root distribution of the tree and vegetation were measured and investigated at the each plot. The soil hardness measured by the Yamanaka Soil Hardness Tester in mm unit. the results are as follows: 1) Soil hardness increases gradually in conformity with the increment of soil depth. The average soil indicator hardness by soil layer are as follows: 14.6mm in I - soil layer (0-10cm in depth from soil surface), 16.2mm in II - soil layer (10-20cm), 17.2 in III - soil layer (20-30cm), 18.3mm in IV - soil layer(30-40cm), 19.8mm in V - soil layer (4.50mm). 2) The tree roots (less than 20mm in diameter) distribute more in the surface layer than in the subsoil layer and decrease gradually according to the increment of soil depth. The ratio of the root distribution can be illustrated by comparing with each of five soil layers from surface to subsoil layer as follows: I - soil layer; 31%, II - soil layer; 26%, III - soil layer; 18%, IV - soil layer; 12%, V - soil layer; 13%, 3) Soil hardness and tree root distribution (less than 20mm in diameter) of Pinus rigida Mill. correlate negatively each other; the more soil hardness increases, the most root distribution decreases. The correlation coefficients between soil hardness and distribution of tree roots by soil layer are as follows: I - soil layer; -0.3675 (at the 10% significance level), II - soil layer; -0.5299 (at the 1% significance level), III - soil layer; -0.5573 (at the 2% significance level), IV - soil layer; -0.6922 (at the 5% significance level), V - soil layer; -0.7325 (at the 2% significance level). 4) the most suitable range of soil hardness for the growth of Pinus rigida Mill is the range of 12-14.9mm in soil indicator hardness. In this range of soil indicator hardness, the root distribution of this tree amounts to 41.8% in spite of 33% in soil harness and under the 20.9mm of soil indicator hardness, the distribution amounts to 93.2% in spite of 82% in soil hardness. Judging from above facts, the roots of Pinus rigida can easily grow within the soil condition of 20.9mm in soil indicator hardness. 5) The soil layers are classified by their depths from the surface soil.

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Triple-gate Tunnel FETs Encapsulated with an Epitaxial Layer for High Current Drivability

  • Lee, Jang Woo;Choi, Woo Young
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.17 no.2
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    • pp.271-276
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    • 2017
  • The triple-gate tunnel FETs encapsulated with an epitaxial layer (EL TFETs) is proposed to lower the subthreshold swing of the TFETs. Furthermore, the band-to-band tunneling based on the maximum electric-field can occur thanks to the epitaxial layer wrapping the Si fin. The performance and mechanism of the EL TFETs are compared with the previously proposed TFET based on simulation.

A Simple but Efficient Scheme for Reliable Connectivity and High Performance in Ad-hoc Wireless Networks

  • Tak, Sung-Woo
    • Journal of information and communication convergence engineering
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    • v.10 no.2
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    • pp.141-148
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    • 2012
  • This paper presents a simple but efficient scheme incorporating a reputation-based approach and a cross-layer approach, called the SIM scheme, for maintaining reliable connectivity and high performance in ad-hoc wireless networks. The SIM scheme incorporates the following two things: an ad-hoc routing scheme with a reputation-based approach exploiting the game theory concept based on an evolutionarily stable strategy, and a cross-layer approach between the network layer and the transport layer employing a reputation-based approach.

A Study of WiMAX Security threats and Their Solution

  • Woo, Seon-mi;Jeong, Gisung
    • International Journal of Internet, Broadcasting and Communication
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    • v.8 no.2
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    • pp.66-74
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    • 2016
  • In this study, we have discussed and illustrated the security issues of WiMAX technology including vulnerabilities, threats and some security solution. Both physical layer and data link layer have been considered. Jamming is a major threat in physical layer, and in data link layer we study an authentication problem and see the problem of some unencrypted messages leading to lack of confidentiality. Some of these vulnerabilities have been solved in the recent amendment of 802.16 and some still remain. Moreover WiMax is a new technology yet.

The effects of the filter layer with $CoAl_2O_4$ on inner face of CRT Panel.

  • Kim, Sang-Mun;Koh, Nam-Je
    • 한국정보디스플레이학회:학술대회논문집
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    • 2005.07b
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    • pp.1175-1178
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    • 2005
  • Nanosize cobalt aluminate($CoAl_2O_4$) power as filter layer was coated to improve the color purityand contrast performances on inner face of CRT panel. We simulated color properties by measuring the transmittance and thickness of the coated filter layer. Contrast performance could be improved and color gamut was also changed because of the selective light absorption of filter layer at $580{\sim}605\;nm$.

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Study of transient response in dielectric microstrip line with opto-microwave pulses

  • Wang, Xue;Kim, Ji-Hyoung;Yun, Ji-Hun
    • The Journal of Korea Institute of Information, Electronics, and Communication Technology
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    • v.2 no.2
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    • pp.63-68
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    • 2009
  • We study on the transient response in non-uniform microstrip lines with optically controlled microwave pulses. The transient response of the microwave pulses in plasma layer has been evaluated by reflection function of dielectric microstrip lines. The variation of characteristic response in plasma layer with localized pulses has been evaluated analytically. Reflection the change of the reflection amplitude has been observed.

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RF Magnetron Sputtering 방법으로 증착한 TiO2 / WO3 박막의 특성

  • Lee, Dong-Uk;Kim, Dong-Yeong;Seo, Seong-Bo;Son, Seon-Yeong;Yang, Jeong-Min;Kim, Hwa-Min;Lee, Jong-Yeong
    • Proceedings of the Korean Vacuum Society Conference
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    • 2011.08a
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    • pp.190-190
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    • 2011
  • 일반적으로 TiO2와 WO3는 광촉매 작용으로 인하여 살균력을 보이며, 친수성으로 인해 자가 세정 능력을 가져 유리 및 건축자재의 표면처리, 전자제품의 마감처리 용도로 많이 사용하고 있다. 현재 Sol-gel, CVD, Sputter, Spin-coating 방법 등으로 많은 연구가 진행되어 오고 있다. 이에 본 실험에서는 박막의 두께를 균일하게 만들 수 있는 RF-magnetron sputtering 방법을 이용하여 표면 경도와 부착력이 우수한 TiO2에 열적 특성과 화학적 특성이 안정한 WO3를 Double Layer 방식으로 증착하여 박막을 제작하였다. 광학적 특성을 알아 본 결과 가시광 영역에서 TiO2 / WO3 Double Layer 박막이 80% 이상의 높은 투과율을 나타내었으며, 박막의 표면을 확인 한 결과 TiO2 / WO3 Double Layer 박막이 더 조밀한 표면을 보였다. 또한 접촉각을 측정을 통하여 TiO2박막보다 TiO2 / WO3 double layer박막이 낮은 접촉각을 나타내었다. 이는 TiO2 표면은 소수성이나 WO3로 인해 광촉매 기능이 향상되어 공기 중의 물 분자가 해리 흡착되면서 친수성이 향상되는 것으로 사료된다. 이러한 박막은 건물의 외벽이나 자동차의 내 외장재 전자기기용 광학 필름에 자가세정, 내반사 코팅소재로 활용 가치가 높을 것으로 예상된다.

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Atomic-Layer Etching of High-k Dielectric Al2O3 with Precise Depth Control and Low-Damage using BCl3 and Ar Neutral Beam

  • Kim, Chan-Gyu;Min, Gyeong-Seok;Yeom, Geun-Yeong
    • Proceedings of the Korean Vacuum Society Conference
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    • 2012.02a
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    • pp.114-114
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    • 2012
  • Metal-oxide-semiconductor field-effect transistors (MOSFETs)의 critical dimension (CD)가 sub 45 nm로 줄어듬에 따라 기존에 gate dielectric으로 사용하고 있는 SiO2에서 발생되는 high gate leakage current 때문에 새로운 high dielectric constant (k) 물질들이 연구되기 시작하였다. 여러 가지 high-k 물질 중에서, aluminum-oxide (Al2O3)는 높은 dielectric constant (~10)와 전자 터널링 barrier height (~2eV) 등을 가지기 때문에 많은 연구가 되고 있다. 그러나 Al2O3를 anisotropic한 patterning을 하기 위해 주로 사용되고 있는 halogen-based 플라즈마 식각 과정에서 나타나는 Al2O3와 하부 layer간의 낮은 식각 selectivity 뿐만 아니라 표면에 발생되는 defect, stoichiometry modification, roughness 변화 등의 많은 문제점들로 인하여 device performance가 감소하기 때문에 이를 해결하기 위한 많은 연구들이 진행중이다. 따라서 본 연구에서는 실리콘 기판위의 atomic layer deposition (ALD)로 증착된 Al2O3를 BCl3/Ar 중성빔을 이용하여 원자층 식각한 후 식각 특성을 분석해 보았다. Al2O3 표면을 BCl3로 absorption시킨 후 Ar 중성빔으로 desorption 시키는 과정에서 volatile한 aluminum-chlorides와 boron oxychloride가 형성되어 layer by layer로 제거됨을 관찰 할 수 있었다.

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Dependence of Blue Organic Emitter Layer Thickness to Optical Property of 2-wavelength White Organic Light-emitting Diodes (청색 유기발광층 두께에 따른 2-파장 방식의 백색 유기발광 소자의 광학적 특성)

  • Park, Chan-Jun;Cho, Nam-Ihn;Song, Young-Wook
    • Journal of Institute of Control, Robotics and Systems
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    • v.14 no.6
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    • pp.511-514
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    • 2008
  • 2-wavelength type white OLED devices have been made consisted of two layers; a layer with blue light emitting DPVBi host and other EML layer with yellow emitting rubrene dopant. New method to get white emitting device has been suggested by varying thicknesses of the DPVBi layer. The ITO/2-TNATA($150{\AA}$)/NPB($350{\AA}$)/DPVBi($35{\AA}$)/DPVBi:rubrene (2wt%,$200{\AA}$)/DPVBi($100{\AA}$)/Alq_3($50{\AA}$)/LiF($5{\AA}$)/Al($1000{\AA}$) structure has showed optimum results in CIE coordinates of (0.3233, 0.33). OLED devices with this structure has properties of $1.2d/m^2$ at turn-on voltage of 3.9V and $1037cd/m^2$ at 7.9V. This structure has advantages of simple fabrication and easy to emit the white color.