• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.178.2-178.2
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• 2015

In and Ga doped ZnO (IGZO) films were deposited on 5 nm thick Cu film buffered Polycarbonate (PC) substrates with RF magnetron sputtering and then the effect of Cu buffer layer on the optical and electrical properties of the films was investigated. While IGZO single layer films show the electrical resistivity of $1.2{\times}10-1{\Omega}cm$, IGZO/Cu bi-layered films show a lower resistivity of $1.6{\times}10-3{\Omega}cm$. Although the optical transmittance of the films in a visible wave length range is deteriorated by Cu buffer layer, IGZO films with 5 nm thick Cu buffer layer show the higher figure of merit of $2.6{\times}10-4{\Omega}-1$ than that of the IGZO single layer films due to the enhanced opto-electrical performance of the IGZO/Cu bi-layered films.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 1997.04a
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• pp.460-464
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• 1997

By the used of a similar numerical method as in the previous paper, the forming limit stain of coatedsheet metals is investigated in which the FEM is applied and J2G(J/sab 2/-Gotoh's corner theory) is utilized as the plasticity constitutive equation. Coated two-layer sheets and sheets bonded with dissimilar sheets on both surface planes are stetched in a plane-strain atate, with various work-hardening exponent n-values and thicknesses of each layer. Processes of shear-band formation in such composite sheets are clearly illustrated. It is concluded that, in the coated state, the higher limiting strain of one layer is reduced due to the lower limiting stain of the other layer and vice, and does not necessarily obey the rule of linear combination of the limiting stain of each layer weighted according thickness.

• Proceedings of the Korean Society of Machine Tool Engineers Conference
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• 2003.04a
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• pp.340-345
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• 2003

By the use of a similar numerical method as that in the previous paper, the forming limit strain by coating method of clad sheet metals is investigated, in which the FEM is applied and J2G(J2-Gotoh's corner theory) is utilized as the plasticity constitutive equation. Clad two-layer sheets and sheets bonded with dissimilar sheets on both surface planes are stretched in a plane-strain state, with various work-hardening exponent n-values and thicknesses of each layer. Processes of shear-band formation in such composite sheets are clearly illustrated. It is concluded that, in the clad state, the higher limiting strain of one layer is reduced due to the lower limiting strain of the other layer and vice versa, and does not necessarily obey the rule of linear combination of the limiting strain of each layer weighted according thickness.

• KSII Transactions on Internet and Information Systems (TIIS)
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• v.2 no.4
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• pp.171-183
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• 2008

Nowadays, wireless packet data services are provided over Wireless MAN (WMAN) at a high data service rate, while 3G cellular networks provide wide-area coverage at a low data service rate. The integration of mobile WiMAX and 3G networks is essential, to serve users requiring both high-speed wireless access as well as wide-area connectivity. In this paper, we propose a cross-layer optimization scheme for a vertical handover between mobile WiMAX and 3G cellular networks. More specifically, L2 (layer 2) and L3 (layer 3) signaling messages for a vertical handover are analyzed and reordered/combined, to optimize the handover procedure. Extensive simulations using ns-2 demonstrate that the proposed scheme enhances the performance of a vertical handover between mobile WiMAX and 3G networks: low handover latency, high TCP throughput, and low UDP packet loss ratio.

• Journal of Advanced Marine Engineering and Technology
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• v.22 no.5
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• pp.712-720
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• 1998

The effect of H2:N2 gas ratio on the case thickness hardness and nitrides formation in the sur-face of SCM440 machine structural steel have been studied by micro-pulse plasma process. The thickness of compound layer increased with the increase of nitrogen content in the gas com-position. The maximum thickness of compound layer the maximum case depth and the maximum surface hardness were about 15.8${\mu}m$, 400${\mu}m$ and Hv765 respectively in the nitriding condition of 250Pa and 70% nitrogen content at $520^{\circ}C$ for 7hrs. Generally only nitride phases such as ${\'{\gamma}}$($Fe_4N$)$\varepsilon(Fe_2}{_3N}$ phases were detected in compound and diffusion layer by XRD analysis. The amount of $\varepsilon(Fe_2}{_3N}$ phase increased with the increase of nitrogen content. The relative amounts and kind of phases formed in the nitrided case changed with the change of nitrogen content in the gas composition.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.465-465
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• 2013

Inorganic 물질인 SiO2 dielectric 위에 organic dielectric PVP (4-vinyphenol)를 spin coating으로 올려, inorganic/organic dielectric 형태의 double layer구조로 High-performance amorphous indiumgallium zinc oxide thin-film transistors (IGZO TFT)를 제작하여 보았다. SiO2 dielectric을 buffer layer로 80 nm, PVP는 10Wt% 400 nm로 구성하였으며, 200 nm single SiO2 dielectric과 동일한 수준의 leakage current 특성을 MIM Capacitor 구조를 통해서 확인할 수 있었다. 이 소자의 장점은 용액공정의 도입으로 공정 시간의 단축 및 원가 절감을 이룰 수 있으며, dielectric과 channel 사이의 균일한 interface의 형성으로 interface trap 개선 및 Yield 향상의 장점을 갖는다. 우리는 실험을 통해서 SiO2 buffer layer가 수직 electric field에 의한 leakage current을 제어하고, PVP dielectric은 interface를 개선하는 것을 확인하였다. Vth의 negative shift 및 slope의 향상으로 구동전압이 줄어들고, 균일한 I-V Curve 형성을 통해서 Process Yield의 향상을 확인하였다.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.34D no.6
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• pp.43-49
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• 1997

Tungsten poycide has studied gate oxide reliability and dielectric strength charactristics as the composition of gate electrode which applied submicron on CMOS and MOS device for optimizing gate electrode resistivity. The gate oxide reliability has been tested using the TDDB(time dependent dielectric breakdwon) and SCTDDB (stepped current TDDB) and corelation between polysilicon and WSi$_{2}$ layer. iN the case of high intrinsic reliability and good breakdown chracteristics on polysilicon, confirmed that tungsten polycide layer is a better reliabilify properities than polysilicon layer. Also, hole trap is detected on the polysilicon structure meanwhile electron trap is detected on polycide structure. In the case of electron trap, the WSi$_{2}$ layer is larger interface trap genration than polysilicon on large POCL$_{3}$ doping time and high POCL$_{3}$ doping temperature condition. WSi$_{2}$ layer's leakage current is less than 1 order and dielectric strength is a larger than 2MV/cm.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.23 no.2
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• pp.143-147
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• 2010

We have fabricated simple triple-layer blue-emitting phosphorescent organic light emitting diodes (OLEDs) using different thicknesses of N,N'-dicarbazolyl-3,5-benzene (mCP) host layers doped with bis[(4,6-di-fluorophenyl)-pyridinate-N,$C^{2'}$]picolmate (FIrpic) guest materials. The thicknesses of mCP:FIrpic layers were 5, 10, and 30 nm. Driving voltage, current and power efficiencies were investigated. The current efficiency was higher in the 10 nm thick mCP:FIrpic device, resulting from the better electron-hole balance. The device with 10 nm mCP:FIrpic layer exhibited the maximum current efficiency of 22.5 cd/A and power efficiency of 7.4 lm/W at a luminance of 1000 cd/$m^2$.

• Journal of the Korean Magnetics Society
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• v.9 no.6
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• pp.306-311
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• 1999

$La_{2/3}Sr_{1/3}MnO_3(LSMO)/YSZ/SiO_2/Si(100)$ polycrystalline thin films were fabricated be chelated sol-gel method The effect of YSZ buffer layer at low field (120 Oe) spin-polarized tunneling magnetotransport (TMR) properties of LSMO thin film was studied at room temperature. Single perovskite LSMO thin films was obtained. The maximum TMR ratio was increased from 0.2 to 0.42 % by the insertion of YSZ buffer. YSZ as diffusion barrier was attributed to the fine microstructure of LSMO thin films and the reduction of dead layer between LSMO and $SiO_2/Si(100)$ interfaces.

• Journal of the Korean Chemical Society
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• v.35 no.4
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• pp.316-323
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• 1991

We calculated a difference between the YBa$_2Cu _3O_{7-x}$ superconductor (123 system) of critical temperature, 95 K and the YBa$_2Cu_4 O_8$ superconductors (124 system) of critical temperature, 80 K in Y-system superconductors using Extended Huckel Theory (EHT). The valence electron population (VEP), reduced overlap population (ROP) and net charge for the charged cluster models relating to the layer and the chain in 123 and 124 systems were compared. The VEPs of Cu atom in the layer of 123 and 124 systems populated d$_{z^2}$ orbital more than d$_{x^2-y^2}$ orbital, and in the chain of 123 and 124 systems populated d$_{y^2-z^2}$ orbital more than d$_{z^2}$ orbital. The ROP of the Cu(1)-O(1) in the layer of 123 system was larger than the value of the Cu(1)-O(2), but the ROP of the Cu(1)-O(2) in the layer of 124 system was larger than the value of the Cu(1)-O(1). The ROP of Cu(2)-O(4) in the chain of 123 and 124 systems were larger than the value of the Cu(2)-O(3). In 123 system the net charge values of the Cu in the layer was larger than the value of the Cu in the chain. However, in 124 system the net charge value of the Cu in the chain was larger than the value in the layer.