• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
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• pp.67-67
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• 2012

Graphene, two-dimensional one-atom-thick planar sheet of carbon atoms densely packed in a honeycomb crystal lattice, exhibits fascinating electrical properties, such as a linear energy dispersion relation and high mobility in addition to a wide-range optical absorption and high thermal conductivity. Graphene's outstanding tensile strength allows graphene-based electronic and photonic devices to be flexible, bendable, or even stretchable. Recently many groups have reported high performance electronic and optoelectronic devices based on graphene materials, i.e. field-effect transistors, gas sensors, nonvolatile memory devices, and plasmonic waveguides, in which versatile properties of graphene materials have been incorporated into a flexible electronic or optoelectronic platform. However, there are several fundamental or technological hurdles to be overcome in real applications of graphene in electronics and optoelectronics. In this tutorial we will present a short introduction to the basic material properties and recent progresses in applications of graphene to electronics and optoelectronics and discuss future outlook of graphene-based devices.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제40회 동계학술대회 초록집
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• pp.6-6
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• 2011

Graphene, a monlayer of carbon atoms arrange to form a 2-dimensional honeycomb lattice, exhibits enormous fascinating properties, such as a linear energy dispersion relation, a wide-range optical absorption, high thermal conductivity, and mechanical flexibility [1]. Because the unique material properties of graphene allow it to be a promising building block for the next generation electronic and optoelectronic devices, sometimes graphene-based devices have refereed to be a strong candidate to overcome the intrinsic limitations of conventional semiconductor-based technology [2,3]. However, there are several fundamental or technological hurdles to be overcome in real applications of graphene in electronics and optoelectronics. In this tutorial we will present a short introduction to the basic materials properties and recent progress in applications of graphene and discuss future outlook of graphene-based electronic and optoelectronic devices.

• 진공이야기
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• 제3권3호
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• pp.19-23
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• 2016

BNNTs (Boron nitride nanotubes) is an analogue of CNTs (Carbon Nanotubes) in terms of lattice structure. In BNNTs, a boron atom forms sp2 hybridized bonding with three nitrogen atoms, and so does a nitrogen with three boron atoms in the honeycomb structure. Its innovative properties, such as high thermal conductivity, neutron shielding capability, superb oxidation resistance at $900^{\circ}C$, excellent chemical resistance, and superior mechanical properties are advantageous for a wide range of applications, especially for electric device packages, neutron shielding, protective coating materials, and functional composites. In this paper, boron nitride nanotube synthesis, properties and application are reviewed.

• 한국진공학회:학술대회논문집
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• 한국진공학회 1999년도 제17회 학술발표회 논문개요집
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• pp.122-122
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• 1999

Graphite with its advantages of high thermal conductivity, low thermal expansion coefficient, and low elasticity, has been widely used as a structural material for high temperature. However, graphite can easily react with oxygen at even low temperature as 40$0^{\circ}C$, resulting in CO2 formation. In order to apply the graphite to high temperature structural material, therefore, it is necessary to improve its oxidation resistive property. Silicon Carbide (SiC) is a semiconductor material for high-temperature, radiation-resistant, and high power/high frequency electronic devices due to its excellent properties. Conventional chemical vapor deposited SiC films has also been widely used as a coating materials for structural applications because of its outstanding properties such as high thermal conductivity, high microhardness, good chemical resistant for oxidation. Therefore, SiC with similar thermal expansion coefficient as graphite is recently considered to be a g행 candidate material for protective coating operating at high temperature, corrosive, and high-wear environments. Due to large lattice mismatch (~50%), however, it was very difficult to grow thick SiC layer on graphite surface. In theis study, we have deposited thick SiC thin films on graphite substrates at temperature range of 700-85$0^{\circ}C$ using single molecular precursors by both thermal MOCVD and PEMOCVD methods for oxidation protection wear and tribological coating . Two organosilicon compounds such as diethylmethylsilane (EDMS), (Et)2SiH(CH3), and hexamethyldisilane (HMDS),(CH3)Si-Si(CH3)3, were utilized as single source precursors, and hydrogen and Ar were used as a bubbler and carrier gas. Polycrystalline cubic SiC protective layers in [110] direction were successfully grown on graphite substrates at temperature as low as 80$0^{\circ}C$ from HMDS by PEMOCVD. In the case of thermal MOCVD, on the other hand, only amorphous SiC layers were obtained with either HMDS or DMS at 85$0^{\circ}C$. We compared the difference of crystal quality and physical properties of the PEMOCVD was highly effective process in improving the characteristics of the a SiC protective layers grown by thermal MOCVD and PEMOCVD method and confirmed that PEMOCVD was highly effective process in improving the characteristics of the SiC layer properties compared to those grown by thermal MOCVD. The as-grown samples were characterized in situ with OES and RGA and ex situ with XRD, XPS, and SEM. The mechanical and oxidation-resistant properties have been checked. The optimum SiC film was obtained at 85$0^{\circ}C$ and RF power of 200W. The maximum deposition rate and microhardness are 2$mu extrm{m}$/h and 4,336kg/mm2 Hv, respectively. The hardness was strongly influenced with the stoichiometry of SiC protective layers.

• Nuclear Engineering and Technology
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• 제53권2호
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• pp.611-617
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• 2021

The mechanical properties of α-Na₃(U_0.84(2),Na_0.16(2))O₄ have been researched using the first-principles calculations combined with the quasi-harmonic Debye model. The obtained lattice parameters agree well with the published experimental data. The results of elastic constants indicate that α-Na₃(U_0.84(2),Na_0.16(2))O₄ is mechanically stable. The polycrystalline moduli are predicted. The results show that the α-Na₃(U_0.84(2),Na_0.16(2))O₄ exhibits brittleness and possesses obvious elastic anisotropy. The hardness shows that it can be considered a "soft material". Furthermore, the Debye temperature θ_D and the minimum thermal conductivity k_min are also discussed, respectively. Finally, the thermal expansion coefficient α, isobaric heat capacity C_P and isochoric heat capacity C_V are evaluated through the quasi-harmonic Debye model.

• 대한화학회지
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• 제59권3호
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• pp.215-224
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• 2015

Unsymmetrical tetradentate Schiff base N-(2-hydroxy-5-methylacetophenone)-N'-(2-hydroxy acetophenone) ethylene diamine (H₂L) and its complexes with Cr(III), Mn(II), Fe(III), Co(II), Ni(II) and Cu(II) have been synthesized and characterized by elemental analyses, magnetic susceptibility measurements, IR, electronic spectra and thermogravimetric analyses. ¹H, ¹³C-NMR and FAB Mass spectra of ligand clearly indicate the presence of OH and azomethine groups. Elemental analyses of the complexes indicate that the metal to ligand ratio is 1:1 in all complexes. Infrared spectra of complexes indicate a dibasic quadridentate nature of the ligand and its coordination to metal ions through phenolic oxygen and azomethine nitrogen atoms. The thermal behavior of these complexes showed the loss of lattice water in the first step followed by decomposition of the ligand in subsequent steps. The thermal data have also been analyzed for the kinetic parameters by using Horowitz-Metzger method. The dependence of the electrical conductivity on the temperature has been studied over the temperature range 313-403 K and the complexes are found to show semiconducting behavior. XRD and SEM images of some representative complexes have been recorded. The antimicrobial activity of the ligand and its complexes has been screened against various microorganisms and all of them were found to be active against the test organisms. The Fe(III) and Ni(II) complex have been tested for the catalytic oxidation of styrene.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 추계학술대회 논문집
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• pp.126-127
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• 2007

Sn-filled and Fe-doped $CoSb_3$ skutterudites were synthesized by encapsulated induction melting. Single ${\delta}$-phase was successfully obtained by subsequent annealing and confirmed by X-ray diffraction analysis. Temperature dependences of Seebeck coefficient, electrical resistivity and thermal conductivity were examined from 300 K to 700 K. The positive Seebeck coefficient confirmed the p-type conduction. Electrical resistivity increased with increasing temperature, which shows that the $Sn_zCo_3FeSb_{12}$ skutterudite is highly degenerate. Thermal conductivity was reduced by Sn-filling because the filler atoms acted as phonon scattering centers in the skutterudite lattice. Thermoelectric figure of merit was enhanced by Sn filling and its optimum filling content was considered to be z=0.3 in the $Sn_zCo_3FeSb_{12}$ system.

• 한국재료학회지
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• 제16권10호
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• pp.647-651
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• 2006

A new class of compounds in the form of skutterudite structure, Fe doped $CoSb_3$ with a nominal composition of $Fe_xCo_{4-x}Sb_{12}$ ($0{\leq}x{\leq}2.5$), were synthesized by mechanical alloying of elemental powders followed by vacuum hot pressing. Nanostructured, single-phase skutterudites were successfully produced by vacuum hot pressing using as-milled powders without subsequent heat-treatments for the compositions of $x{\leq}1.5$. However, second phase was found to form in case of $x{\geq}2$, suggesting the solubility limit of Fe with Co in this system. Thermoelectric properties including thermal conductivity from 300 to 600 K were measured and discussed. Lattice thermal conductivity was greatly reduced by introducing a dopant up to x=1.5 as well as by increasing phonon scattering in nanostructured skutterudite, leading to enhancement in the thermoelectric figure of merit. The maximum figure of merit was found to be 0.32 at 600 K in the composition of $Fe_xCo_{4-x}Sb_{12}$.

• 한국전기전자재료학회논문지
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• 제12권1호
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• pp.44-49
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• 1999

In this study, microstructure and electrical conductivity of {(G $d_2$ $O_3$)$_{0.75}$( $Y_2$ $O_3$)$_{0.25}$}$_{x}$ (Ce $O_2$)$_{1-x}$ (0.01$\leq$x$\leq$0.25) was investigated as a function of composition x. GYO addition(x) increased the bulk density and G $d_2$ $O_3$ was found to be monoclinic at x>0.15. From the change of the lattice parameter with the addition(x), GYO solution limit for ceria was exceeded in the range of x=0.05 to 0.09. Thermal expansion coefficient(15~17$\times$10$^{-6}$ $^{\circ}C$) of GYC samples at x=0.01 to 0.07 was higher in value than that of 8YSZ(10.8$\times$10$^{-6}$ $^{\circ}C$). The electrical conductivity of GYC samples at x=0.05 showed the maximum(0.01S/cm) in value at 1073K which was 2 times higher than that of 8YSZ. The activation energy for the electrical conduction was determined to be 0.60eV in the temperature range of 1073K.3K..3K.

• Electronic Materials Letters
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• 제14권6호
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• pp.689-699
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• 2018

Nanostructured Ni doped $Bi_2S_3$ ($Bi_{2-x}Ni_xS_3$, $0{\leq}x{\leq}0.07$) is explored as a candidate for telluride free thermoelectric material, through a combination process of mechanical alloying with subsequent consolidation by cold pressing followed with a sintering process. The cold pressing method was found to impact the thermoelectric properties in two ways: (1) introduction of the dopant atom in the interstitial sites of the crystal lattice which results in an increase in carrier concentration, and (2) introduction of a porous structure which reduces the thermal conductivity. The electrical resistivity of $Bi_2S_3$ was decreased by adding Ni atoms, which shows a minimum value of $2.35{\times}10^{-3}{\Omega}m$ at $300^{\circ}C$ for $Bi_{1.99}Ni_{0.01}S_3$ sample. The presence of porous structures gives a significant effect on reduction of thermal conductivity, by a reduction of ~ 59.6% compared to a high density $Bi_2S_3$. The thermal conductivity of $Bi_{2-x}Ni_xS_3$ ranges from 0.31 to 0.52 W/m K in the temperature range of $27^{\circ}C$ (RT) to $300^{\circ}C$ with the lowest ${\kappa}$ values of $Bi_2S_3$ compared to the previous works. A maximum ZT value of 0.13 at $300^{\circ}C$ was achieved for $Bi_{1.99}Ni_{0.01}S_3$ sample, which is about 2.6 times higher than (0.05) of $Bi_2S_3$ sample. This work show an optimization pathway to improve thermoelectric performance of $Bi_2S_3$ through Ni doping and introduction of porosity.