• Earthquakes and Structures
• /
• 제10권5호
• /
• pp.1111-1123
• /
• 2016

To study seismic performance of steel frame-bent structure, one specimen with one-tenth scale, three-bay, and five-story was tested under reversed cyclic lateral load. The entire loading process and failure mode were observed, and the seismic performance indexes including hysteretic loops, skeleton curve, ductility, load bearing capacity, drift ratio, energy dissipation capacity and stiffness degradation were analyzed. The results show that the steel frame-bent structure has good seismic performance. And the ductility and the energy dissipation capacity were good, the hysteresis loops were in spindle shape, which shape were full and had larger area. The ultimate elastic-plastic drift ratio is larger than the limit value specified by seismic code, showing the high capacity of collapse resistance. It can be helpful to design this kind of structure in high-risk seismic zone.

• Restorative Dentistry and Endodontics
• /
• 제40권4호
• /
• pp.314-321
• /
• 2015

Tooth related factors such as palatoradicular groove can be one of the causes for localized periodontal destruction. Such pathological process may result in apicomarginal defect along with inflammation of pulp. This creates challenging situation which clinician must be capable of performing advanced periodontal regenerative procedures for the successful management. This case report discusses clinical management of apicomarginal defect associated with extensive periradicular destruction in a maxillary lateral incisor, along with histopathologic aspect of the lesion.

• 대한전기학회:학술대회논문집
• /
• 대한전기학회 1988년도 추계학술대회 논문집 학회본부
• /
• pp.363-367
• /
• 1988

A simple analytical model for the lateral channel electric field in gate - offset structured Lightly Doped Drain MOSFET has been developed. The model's results agree well with two dimensional device simulations. Due to its simplicity, our model gives a better understanding of the mechanisms involved in reducing the electric field in the LDD MOSFET. The model shows clearly the dependencies of the lateral channel electric field as function of drain and gate bias conditions and process, design parameters. Advantages of analytical model over costly 2-D device simulations is to identify the effects of various parameters, such as oxide thickness, junction depth, gate / drain bias, the length and doping concentration of the lightly doped region, on the peak electric field that causes hot - electron phenomena, individually. We are able to find the optimum doping concentration of LDD minimizing the peak electric field and hot - electron effects.

• JSTS:Journal of Semiconductor Technology and Science
• /
• 제12권1호
• /
• pp.41-45
• /
• 2012

We observed that in chemical vapor deposition (CVD) tungsten silicide (WSix) poly gate scheme, the gate oxide thickness decreases as gate length is reduced, and it intensifies the roll-off properties of transistor. This is because the fluorine diffuses laterally from WSix to the gate sidewall oxide in addition to its vertical diffusion to the gate oxide during gate re-oxidation process. When the channel length is very small, the gate oxide thickness is further reduced due to a relative increase of the lateral diffusion than the vertical diffusion. In DRAM cells where the channel length is extremely small, we found the thinned gate oxide is a main cause of poor retention time.

• 한국정보디스플레이학회:학술대회논문집
• /
• 한국정보디스플레이학회 2003년도 International Meeting on Information Display
• /
• pp.679-682
• /
• 2003

We report the suitable SLS (sequential lateral solidification) as a function of laser intensity. Precursor film is changed from 50nm to 100nm and is deposited on glass substrate by PECVD. We can find the suitable SLS length by changing the mask size. In this paper, we present the well-defined grain growth conditions as a function of laser intensity.

• ETRI Journal
• /
• 제20권1호
• /
• pp.37-45
• /
• 1998

Reduced surface field lateral double-diffused MOS transistor for the driving circuits of plasma display panel and field emission display in the 120V region have been integrated for the first time into a low-voltage $1.2{\mu}m$ analog CMOS process using p-type bulk silicon. This method of integration provides an excellent way of achieving both high power and low voltage functions on the same chip; it reduces the number of mask layers double-diffused MOS transistor with a drift length of $6.0{\mu}m$ and a breakdown voltage greater than 150V was self-isolated to the low voltage CMOS ICs. The measured specific on-resistance of the lateral double-diffused MOS in $4.8m{\Omega}{\cdot}cm^2$ at a gate voltage of 5V.

• 한국소음진동공학회논문집
• /
• 제23권12호
• /
• pp.1103-1110
• /
• 2013

Based on the string, Euler beam, and Timoshenko beam theories, the transfer functions of axially translating web system to predict the lateral tracking are introduced in this paper. In addition, total transfer function of a multi-span web handling system is developed by the combination of the transfer functions of each single span. Experiments and computations are carried out and the results obtained for the Timoshenko beam model are compared with those of other models. The comparison indicates that the predictions from the Timoshenko and Euler beam models are quite different from that of the classical string model in both the gain and phase response. The results are expected to help in the development of high fidelity models of web tracking systems within a general computational framework.

• 항공우주시스템공학회지
• /
• 제2권3호
• /
• pp.1-6
• /
• 2008

The tilt rotor aircraft has the flight characteristics which takes off vertically like a helicopter and flies forward like an airplane. Especially, the transition process from a helicopter to an airplane mode requires not only the mixing of control inputs but also the stability and controllability augmentation system(SCAS) in order to keep the safe flight because there are compound flight dynamic characteristics of a helicopter and an airplane including non-linearity, uncertainty. This paper describes the design of SCAS in a lateral motion for the tilt rotor aircraft based on the $H_{\infty}$ control method, which was performed from mathematical model with weighting matrix based on the relationship between the $H_{\infty}$ norm and the sensitivity function. Through simulation analysis for the controller designed on the $H_{\infty}$ control theory, it was shown that this method may be applied to the control design of the tilt rotor aircraft.

• 대한음성학회:학술대회논문집
• /
• 대한음성학회 1996년도 10월 학술대회지
• /
• pp.409-414
• /
• 1996

The aim of this paper is to research on the actual condition of Koreans' Spanish consonants pronunciation with an emphasis on describing the phonetic different of Korean speakers and Spanish speakers. 40 Spanish words were chosen for the speech sampling, and 10 Spanish majoring Korean students from Seoul or Kyunggi Province and 3 Spanish speakers form Castile, Spain participated in the interview. The most noticeable phonetic differences of Korean speakers' pronunciation comparing with Spanish speakers are abstracted as follows: 1) The voiced stops are pronounced voiceless or weak voiced. 2) The voiced stops are slightly aspirated. 3) The length of voiceless consonants is quite longer than the length of proceeding vowel. 4) Fricatives and affricates are somewhat fronter, and weaker in the degree of friction. 5) There is a strong tendency to geminate dental lateral /l/ such as 'pelo' and to vocalize palatal lateral /$\rightthreetimes$/ such as 'calle' 6) Unlike in Spanish speech flap $\mid$r$\mid$ and trill [r] are pronounced similarly in Korean speech.

• 한국컴퓨터산업교육학회:학술대회논문집
• /
• 한국컴퓨터산업교육학회 2003년도 제4회 종합학술대회 논문집
• /
• pp.95-98
• /
• 2003

Power semiconductors are being currently used as a application of intelligent power inverters to a refrigerator, a washing machine and a vacuum cleaner as well as core parts of industrial system. The rating of semiconductor devices is an important factor in decision on the field of application and the forward blocking voltage is one of factors in decision of the rating. The Power MOS device has a merit of high input impedance, short switching time, and stability in temperature as well known. Power MOS devices are mainly used as switches in the field of power electronics, especially the on-state resistance and breakdown voltage are regarded as the most important parameters. Power MOS devices that enable a small size, a light weight, high-integration and relatively high voltage are required these days. In this paper, we proposed the new lateral power MOS which has forward blocking voltage of 250V and contains trench electrodes and verified manufactural possibility by using TSUPREM-4 that is process simulator.