• 제목/요약/키워드: laser diffraction

검색결과 538건 처리시간 0.021초

2-Dimensional Holographic Grating Formation in Chalcogenide Thin Films

  • Lee, Jung-Tae;Yeo, Choel-Ho;Chung, Hong-Bay
    • Transactions on Electrical and Electronic Materials
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    • 제5권1호
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    • pp.34-37
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    • 2004
  • Amorphous chalcogenide thin films, especially a-(Se, S) based films, exhibit a number of photo-induced phenomena. In this study, we make the As$\_$40/Ge$\_$10/Se$\_$15/S$\_$35//Ag thin film and then we measure the holographic diffraction efficiency according to thickness of Ag. And we form the two-dimensional holographic grating. At first, we formed one-dimensional grating and then we form two-dimensional grating by rotate the sample. We found out the most suitable thickness of Ag and in case of As$\_$40/Ge$\_$10/Se$\_$15/S$\_$35//Ag(600${\AA}$), the diffraction efficiency was more higher than other samples. The holographic grating was formed by He-Ne laser(λ=632.8nm). The intensity of incident beam was 2.5mW and incident angle was 20$^{\circ}$. We confirm. the two-dimensional holographic grating by the pattern of diffracted beam and AFM(Atomic Force Microscope) image. We perform the etching process using by 0.26N NaOH in order to confirm clearly two-dimensional grating.

$MgF_{2}/As_{40}Ge_{10}Se_{15}S_{35}$ 다층박막에서 편광상태에 따른 회절효율 특성 (Characteristics of the Polarization Dependence Holographic Diffraction Efficiency using the $MgF_{2}/As_{40}Ge_{10}Se_{15}S_{35}$ Multi-Layer)

  • 이정태;여철호;신경;이기남;김종빈;정홍배
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2003년도 춘계학술대회 논문집 디스플레이 광소자분야
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    • pp.127-130
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    • 2003
  • We have carried out two-beam interference experiment to form holographic grating on amorphous $As_{40}Ge_{10}Se_{15}S_{35}$ single-laver, $MgF_{2}/As_{40}Ge_{10}Se_{15}S_{35}$ muliti-layer. In this study holographic grating formed using He-Ne laser(632.8nm) under different polarization state(intensity, phase polarization holography). The diffraction efficiency was obtained by first order intensity. The maximum diffraction efficiency of $As_{40}Ge_{10}Se_{15}S_{35}$ single-laver was 0.8% and The maximum diffraction efficiency of $MgF_{2}/As_{40}Ge_{10}Se_{15}S_{35}$ multi-layer(multi-layer I, multi-layer II) were 1.4% and 3.1%.

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비정질 As-Ge-Se-S 박막에서의 Ag 도핑에 따른 회절효율 특성 연구 (The characteristic of diffraction efficiency depending on Ag doping on film of amorphous AsGeSeS)

  • 이기남;여철호;신경;정홍배
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2004년도 하계학술대회 논문집 Vol.5 No.2
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    • pp.1066-1069
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    • 2004
  • This paper shows the characteristic of diffraction efficiency on film of amorphous AsGeSeS according to Ag doping. We compare amorhous AsGeSeS with the characteristics of AsGeSeS/Ag (10nm) and AsGeSeS/Ag (20m). We made film such as $\lambda$, $\lambda/2$, $\lambda/4$, $\lambda/8on$ the basis of 633nm, which is wavelength of recording laser(He-Ne). The highest diffraction efficiency on AsGeSeS film is $\lambda/4$, followed by $\lambda/2$, $\lambda$, $\lambda/8$. In the case of Ag 10nm, it is followed by $\lambda/4$, $\lambda/2$, $\lambda$, $\lambda/8$. On the occasion of Ag 20nm, it seems that the highest is $\lambda/2$, followed by $\lambda$, $\lambda/4$, $\lambda/8$. In other words, it appears that the highest point on AsGeSeS(158nm) single layer is 0.09%, the one of AsGeSeS(158nm)/Ag(10nm) is 1.6%, and the point of AsGeSeS(316nm)/Ag(20nm) is3.2%. Comparing the highest point in each case, we conclude that there is a distinctive increase in diffraction efficiency according the effect on Ag doping.

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Infrared Scanning Near-Field Optical Microscopy (IR-SNOM) Below the Diffraction Limit

  • Sanghera, J.S.;Aggarwal, I.D.;Cricenti, A.;Generossi, R.;Luce, M.;Perfetti, P.;Margoritondo, G.;Tolk, N.;Piston, D.
    • 세라미스트
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    • 제10권3호
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    • pp.55-66
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    • 2007
  • Infrared Scanning Near-field Optical Microscopy (IR-SNOM) is an extremely powerful analytical instrument since it combines IR spectroscopy's high chemical specificity with SNOM's high spatial resolution. In order to do this in the infrared, specialty chalcogenide glass fibers were fabricated and their ends tapered to generate SNOM probes. The fiber tips were installed in a modified near field microscope and both inorganic and biological samples illuminated with the tunable output from a free-electron laser located at Vanderbilt University. Both topographical and IR spectral images were simultaneously recorded with a resolution of ${\sim}50\;nm$ and ${\sim}100\;nm$, respectively. Unique spectroscopic features were identified in all samples, with spectral images exhibiting resolutions of up to ${\lambda}/60$, or at least 30 times better than the diffraction limited lens-based microscopes. We believe that IR-SNOM can provide a very powerful insight into some of the most important bio-medical research topics.

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마이크로파 소자응용을 위한 YBCO 박막의 두께 및 증착온도에 관한 특성연구 (Thickness and Orientation Effect on the YBCO Thin Films For Microwave Device Applications)

  • 이상렬;전희석;허창회;한경보;전창훈
    • 한국전기전자재료학회논문지
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    • 제15권6호
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    • pp.539-542
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    • 2002
  • The effect of the superconducting film thickness on the surface resistance has been investigated. Superconducting YBCO thin films have been grown on MgO substrates by pulsed laser deposition. The dependence of the orientation of YBCO film on thickness has been investigated by X-ray diffraction technique. X-ray diffraction indicated that the film orientation was changed by increasing the film thickness and by changing the substrate temperature. The microwave properties of the films with mixed orientations of a-axis and c-axis will be reported for the applications of microwave devices.

Development and Evaluation of an Electron Beam Source for Microscopy and Its Applications

  • Ahn, Seung-Joon;Oh, Tae-Sik;Kim, Ho-Seob;Ahn, Seong-Joon
    • Journal of the Optical Society of Korea
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    • 제14권2호
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    • pp.127-130
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    • 2010
  • We have developed an efficient electron beam (e-beam) source, a microcolumn, that can be used as a source module for of microscopy and its applications. To obtain a low operating voltage, a very sharp cold field electron emitter was developed by electrochemically etching a tungsten wire. Laser diffraction was used for the fabrication of high-quality electron lenses and for their precise alignment. The measurement of the e-beam currents, and SEM images captured by the microcolumn confirmed the potential of the device as a very good e-beam source.

Ag/As-Ge-Se-S 다층박막에서 편광상태에 따른 홀로그래피 격장 형성 특성 (Characteristics of the Polarization-Dependent Holographic grating formation on Ag/As-Ge-Se-S Multi-Layer)

  • 나선웅;이정태;여철호;이영종;정홍배
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2002년도 춘계학술대회 논문집 디스플레이 광소자 분야
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    • pp.85-88
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    • 2002
  • We have carried out two-beam interference experiments to form holographic gratings on chalcogenide $Ag/As_{40}Se_{15}S_{35}Ge_{10}$ multi-layer. In this study, holographic gratings have been formed using He-Ne laser(632.8nm) under different polarization combinations(intensity polarization holography, phase polarization holography). The diffraction efficiency was obtained by +1st order intensity and formed grating structure was investigated using atomic force microscopy.

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전자선 묘화를 이용한 장파장 DFB-LD용 격자 구조의 제작 및 특성 분석 (Fabrication & Characterization of Grating Structures for Long Wavelength DFB-LD Using Electron Beam Lithography)

  • 송윤규;김성준;윤의준
    • 전자공학회논문지A
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    • 제32A권1호
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    • pp.200-205
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    • 1995
  • The 1st and 2nd-order grating structure for long wavelength DFB(Distributed FeedBack) laser diodes are successfully fabricated on InP substrates by using electron beam lithography and reactive ion etch techniques, and also characterized non-destructively by diffraction analysis without removal of photo-resis layer. A new composite layer made by lifted-off Cr layer on thin SiO2 film is developed and used as an etch mask, because PMMA, the e-beamresist, is unsuitable for reactive ion etch of InP. In addition, it is experimentally confiremed that diffraction analysis makes it possible to predict the grating parameters, and the analysis can be used as a non-destructive on-line test to prevent incomplete gratings from being successively processed.

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밀리구조물의 다자유도 미세 변위 측정법에 대한 연구 (A study on multi degrees of freedom fine motion measurement for milli-structure)

  • 배의원;김종안;김수현;곽윤근
    • 한국정밀공학회:학술대회논문집
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    • 한국정밀공학회 2000년도 추계학술대회 논문집
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    • pp.39-42
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    • 2000
  • Cutrent technological development toward miniaturization requires smaller components. These components usually generate complex multi-DOF motions other than simple 1-DOF motlon. Therefore it is essential to develop measurement methodology for 6-DOF motions. In this paper, a new 6-DOF measurement system for milli-struchlre is presented. This methodology basically employs the Optical Beam Deflection Method (OBDM) with a diffraction grating. A laser beam is emitted toward the difliaction grating which could be attached on the surface of a milli-structue and the incident ray is dif'||'&'||'acted in several directions. Among these difliacted beams, $0^{th}$ and $\pm$ $1^{th}4" order difkicted rays are detected by 4 Quadrant Photodiodes. From coordinate values fram each detector, we can get information for 6-DOF motions with lineariration method, Required resolutions for milli-struchue measurement are suh-micrometer in translation and arcsec in rotation. Experimental results indicate that proposed system has possibility to satisfy this requirement.

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A Comparative Study Between Light Extinction and Direct Sampling Methods for Measuring Volume Fractions of Twin-Hole Sprays Using Tomographic Reconstruction

  • Lee, Choong-Hoon
    • Journal of Mechanical Science and Technology
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    • 제17권12호
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    • pp.1986-1993
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    • 2003
  • The spatially resolved spray volume fractions from both line-of-sight data of direct measuring cells and a laser diffraction particle analyzer (LDPA) are tomographically reconstructed by the Convolution Fourier transformation, respectively. Asymmetric sprays generated from a twin-hole injector are tested with 12 equiangular projections of measurements. For each projection angle, a line-of-sight integrated injection rate was measured using a direct sampling method and also a liquid volume fraction from a set of line-of-sight Fraunhofer diffraction measurements was measured using a light extinction method. Interpolated data between the projection angles effectively increase the number of projections, significantly enhancing the signal-to-noise level in the reconstructed data. The reconstructed volume fractions from the direct sampling cells were used as reference data for evaluating the accuracy of the volume fractions from the LDPA.