• 제목/요약/키워드: large amplifier

검색결과 161건 처리시간 0.028초

Display Driver IC용 Amplifier Input Transistor의 Matching 개선 (The Improvement of Matching of Amplifier Input Transistor for Display Driver IC)

  • 김현철;노용한
    • 한국전기전자재료학회논문지
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    • 제21권3호
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    • pp.213-216
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    • 2008
  • The voltages for pixel electrodes on LCD panels are supplied with analog voltages from LCD Driver ICs (LDIs). The latest LDI developed for large LCD TV's has suffered from the degradation of analog output characteristics (target voltage: AVO and output voltage deviation: dVO). By the failure analysis, humps in $I_D-V_G$ curves have been observed in high voltage (HV) NMOS devices for input transistors in amplifiers. The hump is investigated to be the main cause of the deviation for the driving current in HV NMOS transistors. It also makes the matching between two input transistors worse and consequently aggravates the analog output characteristics. By simply modifying the active layout of HV NMOS transistors, this hump was removed and the analog characteristics (AVO &dVO) were improved significantly. In the help of the improved analog characteristics, it also became possible to reduce the size of the input transistors less than a half of conventional transistors and significantly improve the integration density of LDIs.

압전 재료를 이용한 셸형 복합적층판의 진동제어에 대한 실험 (Experiments on Vibration Control of Laminated Shell Structure with Piezoelectric Material)

  • 황우석;고성현;박현철
    • 한국소음진동공학회:학술대회논문집
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    • 한국소음진동공학회 2003년도 춘계학술대회논문집
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    • pp.153-156
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    • 2003
  • Many researchers have tried to develop the piezoelectric shell element and verified them with the benchmarking problem of the piezoelectric bimorph beam since there is no experimental result for the control of shell structure with piezoelectric sensor/actuator. In this paper, the experiments are designed and performed to verify the control Performance of piezoelectric sensor/actuator on the shell structure. PVDF is easy to be attached on the surface of a shell structure but makes weak control forces. On the contrary, PZT makes control forces large enough to control the structure, but it is not easy to make a PZT element with curvature. To use PVDF as an actuator, the structure should be designed as flexible as possible and the voltage amplifier could make high control voltage. PVDF actuator powered by a voltage amplifier that generates output voltage from -200 to +200 volts, shows little control performance to control the vibration of an arch type shell structure. The performance of sensor looks good and the negative velocity feedback control works perfectly. The actuator voltage seems to be too small to verify the control effect Quantitatively. An experiment with high voltage amplifier is scheduled to verify the control effect Quantitatively.

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적외선 수신모듈IC용 전치증폭기의 설계 (Preamplier design for IR receiver IC)

  • 홍영욱;류승탁;최배근;김상경;백승호;조규형
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 2000년도 하계학술대회 논문집 D
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    • pp.3124-3126
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    • 2000
  • The application of IR(Infrared) communication is very wide and IR receiver has become a standard of home entertainment. A preamplifier with single 5V supply was designed for IR receiver IC. To operate at long distance, receiver IC should have high gain and low noise characteristic. To provide constant output signal magnitude, independent of transciever distance, gain limiting stage is needed. And to cut-off DC noise component effectively, large resistance and capacitance are required. Transimpedance type preamplifier, and diode limiting amplifier, and current limiting amplifier were designed. It is another function of current limiting amplifier that transforms single input signal to differential output signal. Using AMS BiCMOS model, both BJT version and MOS version was designed. Total power consumption is O.lmW, and IC size is $0.3mm^2$

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통신용 증폭기의 ESD 고장분석과 대책 (Failure Analysis and Solution of ESD for Amplifier Used in Telecommunication)

  • 황순미;정용백;김철희;이관훈
    • 한국신뢰성학회지:신뢰성응용연구
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    • 제11권3호
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    • pp.251-265
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    • 2011
  • Low-noise amplifier(LNA) is a component that amplifies the signal while lowering the noise figure of high-frequency signal. LNA holds a very important position in RF system so that it is widely used for telecommunication. Electro static discharge(ESD) is the most common cause of malfunction for low-powered components, such as Large Scale Integration and IC type LNA is weak in ESD. This thesis studies static effect of communication LNA. It analyzes ESD effect, which occurs within LNA circuit, and describes testing standard and methods. In order to find out LNA's susceptiblity to electro static, two well-recognized communication IC type LNA models were selected to be tested. Then static-induced malfunction was carefully analyzed and it suggests architectural problem and improvement from the LNA's ESD point of view.

PWM 방식 벅 컨버터의 빠른 과도응답 기술 (Fast Transient Response Techniques for PWM Buck Converter)

  • 석진민;서정덕;공배선
    • 전기전자학회논문지
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    • 제20권1호
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    • pp.103-106
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    • 2016
  • PWM 벅 컨버터는 3형 오차 보상기를 주로 사용하고 있다. 이 오차 보상기는 낮은 슬루율을 갖게 하는 큰 커패시터로 인해, 부하 전류의 과도응답이 발생하였을 때 부하 전압에 의도하지 않은 큰 오버슈트와 언더슈트를 발생시킨다. 또한 기준전압을 변화시켰을 때의 변화에도 느리게 응답한다. 전원장치의 효율적인 사용을 위해 다양한 부하 전류와 전압이 요구되고 있고, PWM 벅 컨버터 역시 부하 전류 변화와 기준 전압 변화에 따른 부하 전압의 빠른 응답특성을 가져야 한다. 본 논문은 PWM 벅 컨버터의 응답시간을 늘이기 위한 여러 가지 빠른 과도응답 기술들의 동작 방식과 이들 방법이 갖고 있는 장점, 한계점들을 소개한다.

MOS Transistor를 이용한 착동증폭기 (MOS Transistor Differential Amplifier)

  • 이병선
    • 대한전자공학회논문지
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    • 제4권4호
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    • pp.2-12
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    • 1967
  • MOS 전계효과 transistor를 이용하여 직류착동증폭기를 설계하여 A 정도의 극미소직류전류를 측정하는 장치에 관한 연구이다. 등가회로를 이용하여 전압이득과 동상전압변별비를 주는 식을 유도하였으며 유효등가 source 저항을 대단히 높이기 위한 정전류원회로의 실현을 위한 해석을 하였다. 전압이득은 6.6, 상온에서의 drift는 하루에 1.5mv 정도이고 동상전압변별비는 최고 84db 이었다. 이것은 MOS transistor의 대단히 높은 입력저항의 특징을 살려 전잡상등에서 나오는 극미소직류전류의 측정을 간단하게 할 수 있게 하는 것이다.

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넓은 범위의 전류 출력을 갖는 고선형 전압-제어 전류원 회로 (High-linearity voltage-controlled current source circuits with wide range current output)

  • 차형우
    • 대한전자공학회:학술대회논문집
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    • 대한전자공학회 2004년도 하계종합학술대회 논문집(2)
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    • pp.395-398
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    • 2004
  • High-linearity voltage-controlled current sources (VCCSs) circuits for wide voltage-controlled oscillator and automatic gun control were proposed. The VCCS consists of emitter follower for voltage input, two common-base amplifier which their emitter connected for current output, and current mirror which connected the two amplifier for large output current. The VCCS used only five transistors and a resistor without an extra bias circuit. Simulation results show that the VCCS has current output range from 0mA to 300mA over the control voltage range from 1V to 4.8V at supply voltage 5V. The linearity error of output current has less than $1.4\%$ over the current range from 0A to 300mA.

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한 개의 광증폭기를 이용한 광트랜스버셜 필터 (Design method for optical transversal filter with an optical amplifier)

    • 한국통신학회논문지
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    • 제25권1B호
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    • pp.105-111
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    • 2000
  • 광트랜스버셜 필터를 이용하여 희망하는 특성을 실현하기 위해서는 주어진 전달함수의 차수 만큼의 광섬유 증폭기를 사용하여야 한다. 본 논문에서는 단지 한 개의 광섬유 증폭기를 이용하여 주어진 전달함수의 정수 배를 실현할 수 있는 광트랜스버셜 필터에 대하여 논한다. 이때 광신호 에너지를 유효하게 사용하기 위하여 광신호 에너지를 최소로 하는 설계법을 적용하였다. 그리고 제안한 광트랜스버셜 필터를 이용한 몇 가지의 응용에 대하여 논하였다.

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Multi-Stage CMOS OTA Frequency Compensation: Genetic algorithm approach

  • Mohammad Ali Bandari;Mohammad Bagher Tavakoli;Farbod Setoudeh;Massoud Dousti
    • ETRI Journal
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    • 제45권4호
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    • pp.690-703
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    • 2023
  • Multistage amplifiers have become appropriate choices for high-speed electronics and data conversion. Because of the large number of high-impedance nodes, frequency compensation has become the biggest challenge in the design of multistage amplifiers. The new compensation technique in this study uses two differential stages to organize feedforward and feedback paths. Five Miller loops and a 500-pF load capacitor are driven by just two tiny compensating capacitors, each with a capacitance of less than 10 pF. The symbolic transfer function is calculated to estimate the circuit dynamics and HSPICE and TSMC 0.18 ㎛. CMOS technology is used to simulate the proposed five-stage amplifier. A straightforward iterative approach is also used to optimize the circuit parameters given a known cost function. According to simulation and mathematical results, the proposed structure has a DC gain of 190 dB, a gain bandwidth product of 15 MHz, a phase margin of 89°, and a power dissipation of 590 ㎼.

$rho$차 역필터 기법을 이용한 OFDM 시스템의 메모리가 없는 비선형 고전력 증폭기의 전치 보상기 설계 (Predistorter Design for a Memory-less Nonlinear High Power Amplifier Using the $rho$th-Order Inverse Method for OFDM Systems)

  • 임선민;은창수
    • 한국통신학회논문지
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    • 제31권2C호
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    • pp.191-199
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    • 2006
  • 본 논문에서는 OFDM 신호의 높은 PAPR과 전력 증폭기의 비선형성에 의한 신호의 왜곡과 스펙트럼의 확산을 방지하기 위하여 $rho$차 역필터 구조를 사용하는 전치 보상기를 구현하는 방안을 제시한다. 메모리가 없는 고전력 증폭기를 다항식으로 모델링 하고 전치 보상기로써 비선형 증폭기 특성의 역모델인 $rho$차 역필터 구조를 이용한다. $rho$차 역필터 구조는 비선형 시스템이 다항식으로 모델링 된다면 다항식의 계수만으로 구현될 수 있으므로 많은 메모리가 필요 없다. 비선형 전력 증폭기 모델의 계수 갱신을 위하여는 LMS, RLS 알고리듬을 모두 사용할 수 있으며 계수의 개수가 적어 수렴 속도가 빠르고 복소 계산이 필요 없으므로 계산도 간단하다.