Journal of the Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회논문지)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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The Improvement of Matching of Amplifier Input Transistor for Display Driver IC

Display Driver IC용 Amplifier Input Transistor의 Matching 개선

  • 김현철 (삼성전자(주) S.LSI 사업부 기술개발실 DDI PA) ;
  • 노용한 (성균관대학교 정보통신공학부)
  • Published : 2008.03.01
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Abstract

The voltages for pixel electrodes on LCD panels are supplied with analog voltages from LCD Driver ICs (LDIs). The latest LDI developed for large LCD TV's has suffered from the degradation of analog output characteristics (target voltage: AVO and output voltage deviation: dVO). By the failure analysis, humps in $I_D-V_G$ curves have been observed in high voltage (HV) NMOS devices for input transistors in amplifiers. The hump is investigated to be the main cause of the deviation for the driving current in HV NMOS transistors. It also makes the matching between two input transistors worse and consequently aggravates the analog output characteristics. By simply modifying the active layout of HV NMOS transistors, this hump was removed and the analog characteristics (AVO &dVO) were improved significantly. In the help of the improved analog characteristics, it also became possible to reduce the size of the input transistors less than a half of conventional transistors and significantly improve the integration density of LDIs.

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References

  1. W. K. Park, "Effect of capping silicon nitride layer and nitrided gate oxide on hump of transistor", IEEE Electron Device Letters, Vol. 25, No. 8, p. 532, 2004 https://doi.org/10.1109/LED.2004.832121
  2. S. K. Park, M. S. Suh, J. Y. Kim, G. H. Yoon, and S. H. Jang, "CMOSFET characteristics induced by moisture diffusion from interlayer dielectric in 0.23 um DRAM technology with shallow trench isolation", 38th Annu. Int. Reliability Physics Symp., p. 164, 2000
  3. S. P. Murarka, "Diffusion and segregation of ion-implanted boron in silicon in dry oxygen ambients", Phys. Rev., Vol. 12, No. 6, p. 2502, 1975 https://doi.org/10.1103/PhysRevB.12.2502
  4. P. Sallagoity, M. Ada-Hanifi, M. Paoli, and M. Haond, "Analysis of width edge effect in advanced isolation schemes for deep submicron CMOS technologies", IEEE Trans. Electron Devices, Vol. 43, p. 1900, 1996 https://doi.org/10.1109/16.543025
  5. L. A. Akers, "The inverse-narrow-width effect", IEEE Electron Device Letters, Vol. EDL-7, p. 419, 1986
  6. Mizuno, T., Okumtura, J., and Toriumi, A., "Experimental study of threshold voltage fluctuation due to statistical variation of channel dopant number in MOSFET's", IEEE Trans. Electron Devices, Vol. 41, Iss. 11, p. 2216, 1994 https://doi.org/10.1109/16.333844