• Journal of the Korean Ceramic Society
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• v.50 no.1
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• pp.63-69
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• 2013

Negative-temperature coefficient (NTC) thermistors based on nickel manganite spinel ($NiMn_2O_4$) are widely used for many applications, such as sensors and temperature compensators, due to their good thermistor characteristics and stabilities. However, to achieve thermistors with a high NTC B constant, which is an important figure of merit pertaining to the degree of temperature sensitivity, the activation energy should be high such that high resistivity at ambient temperatures results. To obtain a high B constant and low resistivity, Al and Si modified spinel structured $Ni_{0.6}Si_{0.2}Al_{0.6}Mn_{1.6}O_4$ hybrid thick films with the conducting metal oxide of $LaNiO_3$ were fabricated on a glass substrate by aerosol deposition at room temperature (RT). The NTC-$LaNiO_3$ hybrid thick films showed resistivity as low as < $100k{\Omega}\;cm$ at $90^{\circ}C$, which is one or two orders of magnitude lower than that of the monolithic NTC films, while retaining a high B constant of $NiMn_2O_4$ of over 5500 K when 20 wt% $LaNiO_3$ was added without a post-thermal treatment. These phenomena are explained by the percolation threshold mechanism.

• 한국지구물리탐사학회:학술대회논문집
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• 2005.05a
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• pp.79-86
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• 2005

The apparent source spectrum of the Fukuoka earthquake is estimated at the seismic basement by removing from the observed spectra at Korean seismic stations the path and site responses that were previously revealed through inversion process applied to large spectral D/B accumulated until 2004. The approximate source spectrum is also estimated by using data recorded near the epicenter from various Japanese seismic networks and compared with the Korean source spectrum. The comparison result shows that there is good agreement among source spectra estimated based on the data from seismic networks of Korea at large distances (190km

• Korean Journal of Materials Research
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• v.21 no.5
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• pp.277-282
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• 2011

Negative temperature coefficient (NTC) materials have been widely studied for industrial applications, such as sensors and temperature compensation devices. NTC thermistor thick films of $Ni_{1+x}Mn_{2-x}O_{4+{\delta}}$ (x = 0.05, 0, -0.05) were fabricated on a glass substrate using the aerosol deposition method at room temperature. Resistance verse temperature (R-T) characteristics of the as-deposited films showed that the B constant ranged from 3900 to 4200 K between $25^{\circ}C$ and $85^{\circ}C$ without heat treatment. When the film was annealed at $600^{\circ}C$ 1h, the resistivity of the film gradually decreased due to crystallization and grain growth. The resistivity and the activation energy of films annealed at $600^{\circ}C$ for 1 h were 5.203, 5.95, and 4.772 $K{\Omega}{\cdot}cm$ and 351, 326, and 299 meV for $Ni_{0.95}Mn_{2.05}O_{4+{\delta}}$, $NiMn_2O_4$, and $Ni_{1.05}Mn_{1.95}O_{4+{\delta}}$, respectively. The annealing process induced insulating $Mn_2O_3$ in the Ni deficient $Ni_{0.95}Mn_{2.05}O_{4+{\delta}}$ composition resulting in large resistivity and activation energy. Meanwhile, excess Ni in $Ni_{1.05}Mn_{1.95}O_{4+{\delta}}$ suppressed the abnormal grain growth and changed $Mn^{3+}$ to $Mn^{4+}$, giving lower resistivity and activation energy.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.30 no.5
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• pp.263-269
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• 2017

A piezoelectric cantilever energy harvester (PCEH) driven in longitudinal (3-3) vibration mode was fabricated, and its electrical properties were evaluated by varying the resistive load. A commercial PZT piezoelectric ceramic with a high piezoelectric charge constant ($d_{33}$) of 520 pC/N and the interdigitated (IDT) electrode pattern was used to fabricate the PCEH driven in longitudinal vibration. The IDT Ag electrode embedded piezoelectric laminates were co-fired at $850^{\circ}C$ for 2 h. The 3-3 mode PCEH was successfully fabricated by attaching the piezoelectric laminates to a SUS304 elastic substrate. The PCEH exhibited a high output power of 3.8 mW across the resistive load of $100k{\Omega}$ at 100 Hz and 1.5 G. This corresponds to a power density of $10.3mW/cm^3$ and a normalized global power factor of $4.56mW/g^2{\cdot}cm^3$. Given the other PCEH driven in transverse (3-1) vibration mode, the 3-3 mode PCEH could be better for vibration energy harvesting applications.

• Korean Journal of Materials Research
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• v.23 no.12
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• pp.714-721
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• 2013

A stoichiometric mixture of evaporating materials for $ZnAl_2Se_4$ single-crystal thin films was prepared in a horizontal electric furnace. These $ZnAl_2Se_4$ polycrystals had a defect chalcopyrite structure, and its lattice constants were $a_0=5.5563{\AA}$ and $c_0=10.8897{\AA}$.To obtain a single-crystal thin film, mixed $ZnAl_2Se_4$ crystal was deposited on the thoroughly etched semi-insulating GaAs(100) substrate by a hot wall epitaxy (HWE) system. The source and the substrate temperatures were $620^{\circ}C$ and $400^{\circ}C$, respectively. The crystalline structure of the single-crystal thin film was investigated by using a double crystal X-ray rocking curve and X-ray diffraction ${\omega}-2{\theta}$ scans. The carrier density and mobility of the $ZnAl_2Se_4$ single-crystal thin film were $8.23{\times}10^{16}cm^{-3}$ and $287m^2/vs$ at 293 K, respectively. To identify the band gap energy, the optical absorption spectra of the $ZnAl_2Se_4$ single-crystal thin film was investigated in the temperature region of 10-293 K. The temperature dependence of the direct optical energy gap is well presented by Varshni's relation: $E_g(T)=E_g(0)-({\alpha}T^2/T+{\beta})$. The constants of Varshni's equation had the values of $E_g(0)=3.5269eV$, ${\alpha}=2.03{\times}10^{-3}eV/K$ and ${\beta}=501.9K$ for the $ZnAl_2Se_4$ single-crystal thin film. The crystal field and the spin-orbit splitting energies for the valence band of the $ZnAl_2Se_4$ were estimated to be 109.5 meV and 124.6 meV, respectively, by means of the photocurrent spectra and the Hopfield quasicubic model. These results indicate that splitting of the ${\Delta}so$ definitely exists in the ${\Gamma}_5$ states of the valence band of the $ZnAl_2Se_4/GaAs$ epilayer. The three photocurrent peaks observed at 10 K are ascribed to the $A_1$-, $B_1$-exciton for n = 1 and $C_{21}$-exciton peaks for n = 21.

• Korean Journal of Materials Research
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• v.22 no.4
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• pp.185-189
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• 2012

We report plasma-assisted molecular beam epitaxy of $In_XGa_{1-X}N$ films on c-plane sapphire substrates. Prior to the growth of $In_XGa_{1-X}N$ films, GaN film was grown on the nitride c-plane sapphire substrate by two-dimensional (2D) growth mode. For the growth of GaN, Ga flux of $3.7{\times}10^{-8}$ torr as a beam equivalent pressure (BEP) and a plasma power of 150 W with a nitrogen flow rate of 0.76 sccm were fixed. The growth of 2D GaN growth was confirmed by $in-situ$ reflection high-energy electron diffraction (RHEED) by observing a streaky RHEED pattern with a strong specular spot. InN films showed lower growth rates even with the same growth conditions (same growth temperature, same plasma condition, and same BEP value of III element) than those of GaN films. It was observed that the growth rate of GaN is 1.7 times higher than that of InN, which is probably caused by the higher vapor pressure of In. For the growth of $In_xGa_{1-x}N$ films with different In compositions, total III-element flux (Ga plus In BEPs) was set to $3.7{\times}10^{-8}$ torr, which was the BEP value for the 2D growth of GaN. The In compositions of the $In_xGa_{1-x}N$ films were determined to be 28, 41, 45, and 53% based on the peak position of (0002) reflection in x-ray ${\theta}-2{\theta}$ measurements. The growth of $In_xGa_{1-x}N$ films did not show a streaky RHEED pattern but showed spotty patterns with weak streaky lines. This means that the net sticking coefficients of In and Ga, considered based on the growth rates of GaN and InN, are not the only factor governing the growth mode; another factor such as migration velocity should be considered. The sample with an In composition of 41% showed the lowest full width at half maximum value of 0.20 degree from the x-ray (0002) omega rocking curve measurements and the lowest root mean square roughness value of 0.71 nm.

• The Korean Journal of Physiology and Pharmacology
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• v.8 no.5
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• pp.265-272
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• 2004

The present study was attempted to investigate the effect of cilnidipine (FRC-8635), which is a newly synthesised novel dihydropyridine (DHP) type of organic $Ca^{2+}$ channel blockers, on secretion of catecholamines (CA) evoked by acetylcholine (ACh), high $K^+$, DMPP and McN-A-343 from the isolated perfused rat adrenal gland. Cilnidipine $(1{\sim}10{\mu}M)$ perfused into an adrenal vein for 60 min produced relatively dose- and time-dependent inhibition in CA secretory responses evoked by ACh $(5.32{\times}10^{-3}M),\;DMPP\;(10^{-4}M\;for\;2\;min)$ and McN-A-343 $(10^{-4}M\;for\;2\;min)$. However, lower dose of cilnidipine did not affect CA secretion by high $K^+\;(5.6{\times}10^{-2}\;M)$, higher dose of it reduced greatly CA secretion of high $K^{+}$. Cilnidipine itself did fail to affect basal catecholamine output. In the presence of cilnidipine $(10{\mu}M)$, the CA secretory responses evoked by Bay-K-8644 $(10{\mu}M)$, an activator of L-type $Ca^{2+}$ channels and cyclopiazonic acid $(10{\mu}M)$, an inhibitor of cytoplasmic $Ca^{2+}$-ATPase were also inhibited. Moreover, ${\omega}-conotoxin\;GVIA\;(1{\mu}M)$, a selective blocker of the N-type $Ca^{2+}$ channels, given into the adrenal gland for 60 min, also inhibited time-dependently CA secretory responses evoked by Ach, high $K^+$, DMPP, McN-A-343, Bay-K-8644 and cyclopiazonic acid. Taken together, these results demostrate that cilnidipine inhibits CA secretion evoked by stimulation of cholinergic (both nicotinic and muscarinic) receptors from the isolated perfused rat adrenal gland without affecting the basal release. However, at lower dose, cilnidipine did not affect CA release by membrane depolarization while at larger dose inhibited that. It seems likely that this inhibitory effect of cilnidipine is exerted by blocking both L- and N-type voltage-dependent $Ca^{2+}$ channels (VDCCs) on the rat adrenomedullary chromaffin cells, which is relevant to inhibition of both the $Ca^{2+}$ influx into the adrenal chromaffin cells and intracellular $Ca^{2+}$ release from the cytoplasmic store. It is thought that N-type VDCCs may play an important role in regulation of CA release from the rat adrenal medulla.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.397-397
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• 2013

The electrical, electronic, optical properties and the local structure of Nickel Oxide (NiO) thin film have been investigated by X-ray photoelectron spectroscopy (XPS), Reflection Electron Energy Loss Spectroscopy (REELS), UV-spectrometer,Hall Effect measurement and X-ray absorption spectroscopy (XAS). The XPS results show that the Ni 2p spectra for all films consist of $Ni2p_{3/2}$ at around 854.5 eV which indicate the presence of Ni-O bond from NiO phase and for the annealed film at temperature above $200^{\circ}C$ shows the coexist Ni oxide and Ni metal phase. The REELS spectra showed that the band gaps of the NiO thin films were abruptly decreased with increasing temperature. The values of the band gaps are consistent with the optical band gaps estimated by UV-Spectrometer. The optical transmittance spectra shows that the transparency of NiO thin films in the visible light region was deteriorated with higher temperature due to existence of $Ni^0$. Hall Effect measurement suggest that the NiO thin films prepared at relatively low temperatures (RT and $100^{\circ}C$) are suitable for fabricating p-type semiconductor which showed that the best properties was achieved at $100^{\circ}C$, such as a low resistivity of $7.49{\Omega}.cm$. It can be concluded that the annealing process plays a crucial role in converting from p type to n type semiconductor which leads to reducing electrical resistivity of NiO thin films. Furthermore, the extended X-ray absorption fine structure (EXAFS) spectrum at the Ni K-edge was used to address the local structure of NiO thin films. It was found that the thermal treatments increase the order in the vicinity of Ni atom and lead the NiO thin films to bunsenite crystal structure. Moreover, EXAFS spectra show in increasing of coordination number for the first Ni-O shell and the bond distance of Ni-O with the increase of substrate temperature.

• Journal of Microbiology and Biotechnology
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• v.30 no.1
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• pp.85-92
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• 2020

One of the omega-3 essential fatty acids, docosahexaenoic acid (DHA), is a significant constituent of the cell membrane and the precursor of several potent lipid mediators. These mediators are considered to be important in preventing or treating several diseases. Resolvin D5, an oxidized lipid mediator derived from DHA, has been known to exert anti-inflammatory effects. However, the detailed mechanism underlying these effects has not yet been elucidated in human monocytic THP-1 cells. In the present study, we investigated the effects of resolvin D5 on inflammation-related signaling pathways, including the extracellular signal-regulated kinase (ERK)-nuclear factor (NF)-κB signaling pathway. Resolvin D5 downregulated the production of interleukin (IL)-6 and chemokine (C-C motif) ligand 5 (CCL5). Additionally, these inhibitory effects were found to be modulated by mitogen-activated protein kinase (MAPK) and NF-κB in lipopolysaccharide (LPS)-treated THP-1 cells. Resolvin D5 inhibited the LPS-stimulated phosphorylation of ERK and translocation of p65 and p50 into the nucleus, resulting in the inhibition of IL-6 and CCL5 production. These results revealed that resolvin D5 exerts anti-inflammatory effects in LPS-treated THP-1 cells by regulating the phosphorylation of ERK and nuclear translocation of NF-κB.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.30 no.12
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• pp.768-775
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• 2017

Energy harvesting characteristics of trapezoidal piezoelectric cantilever generator, which has a lead zirconate titanate (PZT) laminate film, were compared by longitudinal (3-3) and transverse (3-1) modes. The PZT laminate film, fabricated by a conventional tape casting process, was cofired with Ag electrode at $850^{\circ}C$ for 2 h. A multi-layered Ag electrode by a planar pattern and an interdigitated pattern was applied to the PZT laminate to implement the 3-3 and 3-1 modes, respectively. The energy harvesting performance of the 3-3 mode trapezoidal piezoelectric cantilever generator was better than that of the 3-1 mode. An extremely high output power density of $26.7mW/cm^3$ for the 3-3 mode was obtained at a resonant frequency of 145 Hz under a load resistance of $50{\Omega}$ and acceleration of 1.3 G, which is ~3-times higher than that for the 3-1 mode. Therefore, the 3-3 mode is considered significantly efficient for application to high-performance piezoelectric cantilever generator.