• 한국재료학회지
• /
• 제8권7호
• /
• pp.591-595
• /
• 1998

이 연구에서는 HVPE법으로 두께가 350$\mu\textrm{m}$, 면적이 100$\textrm{mm}^2$인 크랙이 없는 freestanding GaN 단결정 기판을 제작하고, 그 특성을 조사하였다. 제작된 GaN 기판의 격자상수는 $c_{o}$ =5.18486$\AA$이었고, 이중 X-선 회절피크의 반치폭은 650 arcsec 이었다. 10K의 온도에서 측정한 PL 스펙트럼은 에너지 밴드 갭 부근에서 중성 도너와 중성 억셉터에 구속된 여기자 및 자유여기자의 소멸에 의한 발광과 결정 결함고 관계하는 깊은 준위에 의한 1.8eV 부근 발광으로 구성되었다. 또한 라만 E2(high)모드 주파수는 567cm-1로서 벌크 GaN 단결정의 값과 같았다. 한편, GaN 기판의 전기저항도형은 n형이었고, 전기 비저항은 0.02$\Omega$.cm이었으며, 캐리어 이동도와 농도는 각각 283$\textrm{cm}^2$/V.s와 1.1$\times$$10^{18}$$cm^{-3}$이었다.

• 한국재료학회지
• /
• 제23권8호
• /
• pp.430-434
• /
• 2013

Quantum dots(QDs) with their tunable luminescence properties are uniquely suited for use as lumophores in light emitting device. We investigate the microstructural effect on the electroluminescence(EL). Here we report the use of inorganic semiconductors as robust charge transport layers, and demonstrate devices with light emission. We chose mechanically smooth and compositionally amorphous films to prevent electrical shorts. We grew semiconducting oxide films with low free-carrier concentrations to minimize quenching of the QD EL. The hole transport layer(HTL) and electron transport layer(ETL) were chosen to have carrier concentrations and energy-band offsets similar to the QDs so that electron and hole injection into the QD layer was balanced. For the ETL and the HTL, we selected a 40-nm-thick $ZnSnO_x$ with a resistivity of $10{\Omega}{\cdot}cm$, which show bright and uniform emission at a 10 V applied bias. Light emitting uniformity was improved by reducing the rpm of QD spin coating.At a QD concentration of 15.0 mg/mL, we observed bright and uniform electroluminescence at a 12 V applied bias. The significant decrease in QD luminescence can be attributed to the non-uniform QD layers. This suggests that we should control the interface between QD layers and charge transport layers to improve the electroluminescence.

• Transactions on Electrical and Electronic Materials
• /
• 제11권6호
• /
• pp.279-284
• /
• 2010

This study has been carried out to determine the optimal process conditions of $AZO:H_2$ thin films for the maximization of the transmittance of a blue GaN light-emitting diode (LED) with a wavelength of 470 nm. The Al-doped zinc oxide $(AZO):H_2$ thin films were deposited on a sapphire substrate by radio-frequency magnetron sputtering system with varying substrate temperatures, working pressures and annealing temperatures temperature, working pressure and annealing imposed on a AZO (2wt% $Al_2O_3$) ceramic target. The effect of these variables was investigated in order to improve the light extraction efficiency of the LED. As a result, the (002)-oriented peak was found in all the $AZO:H_2$ thin films. The lowest resistivity and the best transmittance at a wavelength of 470 nm was found to be $4.774\;{\times}\;10^{-4}\;{\Omega}cm$ and 92% at a substrate temperature of $500^{\circ}C$, working pressure of 7 mTorr and annealing temperature of $400^{\circ}C$. The transmittance of the $AZO:H_2$ thin film for the Blue GaN LED was improved by approximately 13% relative to that of a ITO thin film (T = 79%).

• 대한전자공학회논문지TC
• /
• 제42권11호
• /
• pp.107-115
• /
• 2005

본 논문에서는 광대역에서 동작하는 대역폭 조절 패치를 갖는 CPW 급전 사각 슬롯 안테나를 제시하였다. 안테나 설계 방법으로서 구조적 변수인 사각 슬롯의 가로폭 및 세로폭을 이용하여 반파장 다이폴 안테나 특성을 보이는 낮은 공진 주파수와 높은 공진 주파수 영역을 설정하였고, 대역폭 조절 패치를 이용한 $50{\Omega}$ 임피던스 정합 조절 과정을 통하여 $20GHz\~33GHz$ 영역에서 동작하는 $50\%$ VSWR=2 임피던스 대역폭을 지닌 안테나 구조를 제시하였다. 안테나 사각 슬롯의 가로폭을 4.6mm로, 세로폭을 3.5mm로, 비율이 $70\%$정도인 안테나 구조에서 중간 주파수 26GHz, 대역폭 $20GHz\~33GHz$의 측정 결과를 나타냈다. 이 결과는 의료용 안테나가 대역폭 조절 패치를 이용할 때 단순한 사각 슬롯 안테나의 구조로 구현됨을 보여 주었다

• 한국식품영양학회지
• /
• 제30권1호
• /
• pp.9-18
• /
• 2017

As an indicator of skin health, acidified skin surface pH ranging from 5 to 7 is crucial for maintaining skin barrier. In this study, we evaluated the relationship between skin pH and dietary pattern (DP) as well as nutrient or food intake in 48 healthy middle aged adults. Skin pH was measured in the skin surface of the inner arm, and blood lipid profile was analyzed. Dietary intake data were obtained using 1 day 24 hour recall method, and DP was extracted using factor analysis. Results revealed that skin pH ranged from 5.15 to 6.88 in all subjects. There was no significant difference in skin pH between males and females. When subjects were grouped by tertile of skin pH, the food intake of fruit, and the nutrient intake of omega 6 fatty acid, potassium, vitamin A, vitamin C, ${\beta}$-carotene, and riboflavin in the first tertile group with skin pH ranging from 5.15 to 5.68 were significantly higher than in the third tertile group with skin pH ranging from 6.26 to 6.88. There was no difference in blood lipid profile between the first and the third tertile group. Among 5 DP extracted by factor analysis, DP5 characterized by a high intake of nuts and fruits as well as a low intake of beverages and alcohol was inversely correlated with skin pH after adjusting for gender and age. DP5 was positively correlated with nutrient intake of carbohydrate, fiber, potassium, iron, vitamin A, vitamin C, ${\beta}$-carotene, thiamine, and riboflavin but negatively correlated with sodium after adjusting for gender, age, smoking, and energy intake. Therefore, acidified skin pH could be maintained by these DP and nutrients.

• 한국전기전자재료학회논문지
• /
• 제25권1호
• /
• pp.62-67
• /
• 2012

Owing to the rapid growth of mobile and electronic equipment miniaturization technology, the supply of micro mobile computing machine has been fast raised. Accordingly they have performed many researches on energy harvesting technology to provide promising power supply equipment to substitute existing batteries. In this paper, in order to have low resonance frequency for piezoelectric energy harvester, we have tried to make it larger than before by adopting nickel that has much higher density than silicon. We have applied it for our energy harvesting actuator instead of the existing silicon based actuator. Through such new concept and approach, we have designed energy harvesting device and made it personally by making with micromachining process. The energy harvester structure has a cantilever type and has a dimension of $10{\times}2.5{\times}0.1\;mm^3$ for length, width and thickness respectively. Its electrode type is formed by using Au/Ti of interdigitate d33 mode. The pattern size and gap size is 50 ${\mu}m$. Based on the measurement of the nickel-based piezoelectric energy harvester, it is found to have 778 Hz for a resonant frequency with no proof mass. In that resonance frequency we could get a maximum output power of 76 ${\mu}W$ at 4.8 $M{\Omega}$ being applied with 1 g acceleration.

• 전기학회논문지
• /
• 제66권4호
• /
• pp.659-665
• /
• 2017

Power semiconductor devices required the low on-resistance and high breakdown voltage. Wide band-gap materials opened a new technology of the power devices which promised a thin drift layer at an identical breakdown voltage. The diamond had the wide band-gap of 5.5 eV which induced the low power loss, high breakdown capability, low intrinsic carrier generation, and high operation temperature. We investigated the p-type pseudo-vertical diamond Schottky barrier diodes using a numerical simulation. The impact ionization rate was material to calculating the breakdown voltage. We revised the impact ionization rate of the diamond for adjusting the parallel-plane breakdown field at 10 MV/cm. Effects of the field plate on the breakdown voltage was also analyzed. A conventional diamond Schottky barrier diode without field plate exhibited the high forward current of 0.52 A/mm and low on-resistance of $1.71{\Omega}-mm$ at the forward voltage of 2 V. The simulated breakdown field of the conventional device was 13.3 MV/cm. The breakdown voltage of the conventional device and proposed devices with the $SiO_2$ passivation layer, anode field plate (AFP), and cathode field plate (CFP) was 680, 810, 810, and 1020 V, respectively. The AFP cannot alleviate the concentration of the electric field at the cathode edge. The CFP increased the breakdown voltage with evidences of the electric field and potential. However, we should consider the dielectric breakdown because the ideal breakdown field of the diamond is higher than that of the $SiO_2$, which is widely used as the passivation layer. The real breakdown voltage of the device with CFP decreased from 1020 to 565 V due to the dielectric breakdown.

• 대한의생명과학회지
• /
• 제11권3호
• /
• pp.355-363
• /
• 2005

This study aimed to investigate the cerebroprotective effect of vascular endothelial growth factor (VEGF) on permanent focal cerebral ischemia in Sprague-Dawley rats. Right middle cerebral artery (MCA) was occluded for 6 and 24 hours by an intraluminal monofilament technique. An open cranial window was made on the right parietal bone for determination of continuous changes in regional cerebral blood flow (rCBF) by laser-Doppler flowmetry. The infarct size was morphometrically determined using the 2,3,5-triphenyltetrazolium chloride technique. Brain edema was determined by measuring brain water content. In normal rats, rCBF was significantly increased by intravenous infusion of VEGF for 10 minutes. The VEGF-induced increase in rCBF was significantly inhibited by pretreatment with suramin, a heparin-binding growth factor inhibitor as well as $N^{\omega}-nitro-L-arginine$, a nitric oxide synthase inhibitor. In focal cerebral ischemic rats, the amplitude of decrease in rCBF during ischemic period was significantly less in VEGF-treated group, compared with that in vehicle-treated group. The cerebral infarct size was reduced by VEGF in a dose-dependent manner. The brain edema formation was dose-dependently reduced by VEGF in 24-hour MCA occlusion group but not in 6-hour MCA occlusion group. It is suggested that VEGF not only improves the rCBF during cerebral ischemic period but also reduces the brain edema formation, and thereby exert a protective effect on focal cerebral ischemia in rats.

• Composites Research
• /
• 제30권1호
• /
• pp.41-45
• /
• 2017

Magnetite nanoparticles were synthesized by adding an ammonium hydroxide to a mixed solution of iron (II) and (III) chlorides. A silicon surfactant of ${\alpha},{\omega}$-(3-aminopropyl)polydimethylsiloxane was adsorbed on the particles as dispersant and a polydimethylsiloxane polymer was used to prepare ferrofluids of silicone oil base. Fluorinated surfactants of anionic ammoniated perfluoroalkyl sulfonamide and nonionic fluoroaliphatic polymeric esters were applied to the particles and a perfluoropolyether was used to prepare ferrofluids of fluorine oil base. The experimental conditions were used for preparing the ferrofluids with concentrations of 200, 300 and 400 mg/mL, and density, magnetization and viscosity of the products were characterized. The density values increased in proportion to the concentration, indicating 1.11-1.27 g/mL for silicone-oil-based fluids and 1.95-2.10 g/mL for fluorine-oil-based fluids in the range of 200-400 mg/mL. The saturation magnetization of the silicone-oil-based and fluorine-oil-based fluids indicated 14.7, 24.4, and 30.7 mT and 15.8, 23.3, and 33.7 mT for 200, 300, and 400 mg/mL, respectively, depending on the content of magnetic particles in the fluid. The viscosity of the silicone-oil-based ferrofluids was highly stable compared to that of the fluorine-oil-based with increasing temperatures. The ferrofluids are usually applied to seals and speakers with the silicone base and to seals with the fluorine base.

• 한국식품영양과학회지
• /
• 제44권12호
• /
• pp.1832-1838
• /
• 2015

${\omega}-3$ 지방산이 풍부한 들깨를 이용하여 고령자용 건강간식을 만들기 위해 다식을 제조하고 들깨의 산패 억제를 위해 당근가루를 0, 5, 10 15, 20% 첨가하여 들깨가루 다식을 제조한 결과, 당근가루 첨가량에 따른 들깨 다식의 수분 함량의 변화는 없었으며, 당근 내 카로티노이드에 의해 당근가루 첨가량이 많아질수록 다식의 붉은색과 황색도는 증가하였다. 당근가루 첨가량이 많을수록 다식의 경도와 응집성, 씹힘성은 증가하였다. 다식의 과산화물가와 산가를 측정한 결과 당근가루 첨가량이 많을수록 항산화 효과는 증가하였고, 라디칼 소거능 역시 효과적으로 증가하였다. 지방을 함유한 식품에는 산패 억제를 위해 항산화제를 사용하고 있으며, 특히 합성 항산화제를 대체할 천연 항산화제에 대한 요구가 계속적으로 증가하고 있는데 열처리(데치기)에 의해 ${\beta}-carotene$을 활성화시킨 당근가루는 들깨다식의 항산화 활성을 증진시켜 질적 향상을 유도할 수 있는 좋은 천연 항 산화제로서의 기능을 갖고 있는 것으로 조사되었다. 관능검사 결과 당근가루 첨가 여부에 대한 선호는 뚜렷했으나, 첨가 수준에 따른 선호도의 차이는 없었다. 본 연구 결과 20% 수준의 당근가루 첨가는 항산화 특성을 효과적으로 향상시키면서 전체적인 기호도에 영향을 미치지 않아 들깨다식 제조 시 적정 첨가 수준으로 생각된다.