Transactions on Electrical and Electronic Materials

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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A Study of the Optimal Process Conditions of AZO:H2 Thin Film for Maximization of the Transmittance of a Blue GaN Light-Emitting Diode with a Wavelength of 470 nm

  • Hwang, Seung-Taek (School of Electrical Information Engineering, Wonkwang University) ;
  • Park, Choon-Bae (School of Electrical Information Engineering, Wonkwang University) ;
  • Hoang, Geun-C. (Department of Semiconductor and Display, Wonkwang University)
  • Received : 2010.10.16
  • Accepted : 2010.11.29
  • Published : 2010.12.25
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Abstract

This study has been carried out to determine the optimal process conditions of $AZO:H_2$ thin films for the maximization of the transmittance of a blue GaN light-emitting diode (LED) with a wavelength of 470 nm. The Al-doped zinc oxide $(AZO):H_2$ thin films were deposited on a sapphire substrate by radio-frequency magnetron sputtering system with varying substrate temperatures, working pressures and annealing temperatures temperature, working pressure and annealing imposed on a AZO (2wt% $Al_2O_3$) ceramic target. The effect of these variables was investigated in order to improve the light extraction efficiency of the LED. As a result, the (002)-oriented peak was found in all the $AZO:H_2$ thin films. The lowest resistivity and the best transmittance at a wavelength of 470 nm was found to be $4.774\;{\times}\;10^{-4}\;{\Omega}cm$ and 92% at a substrate temperature of $500^{\circ}C$, working pressure of 7 mTorr and annealing temperature of $400^{\circ}C$. The transmittance of the $AZO:H_2$ thin film for the Blue GaN LED was improved by approximately 13% relative to that of a ITO thin film (T = 79%).

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