• 대한기계학회논문집B
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• 제38권7호
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• pp.601-605
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• 2014

일반적으로 표면적/부피비가 큰 전도성 다공체는 수퍼캐패시터의 전극이나 흡수제, 유연히터 등의 다양한 분야에 적용되어 왔다. 본 논문에서는 이러한 전도성 다공성 구조의 역학적 전기적 특성을 이용하여 고감도 압력센서를 구현하였다. 탄소나노튜브 용액에 스펀지를 적셔 다공체에 전도성을 부여하였으며, 압력에 따른 전도성 다공체의 저항 변화를 측정하였다. 전도성 스펀지에 압력이 가해졌을때, 각각의 탄소나노튜브들은 서로 맞붙게 되어 저항이 최대 20%까지 줄어듦을 확인하였다. 부드럽고 탄성력이 뛰어난 탄소나노튜브 스폰지는 반복적인 압축실험에도 모양의 변형 없이 매우 빠르게 안정화되고 일정한 저항변화를 확인할 수 있었다. 또한 스펀지 압력소자를 유연소자에 적용하기 위하여 탄소나노튜브 트랜지스터와 연결하여 외부압력에 따른 전기적 특성변화를 측정하였다.

• 한국토양비료학회지
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• 제47권6호
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• pp.496-499
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• 2014

The present study investigated variations in soil microbial communities and the chemical properties of forest soils by differing amounts of penetrating sunlight. The soil temperature was significantly higher in higher light-penetrated soils. Higher light-penetrated soils (LP70) showed significantly more fungal communities than the lower light-penetrated soils (LP40 and LP50) (p < 0.05). The $NH_4$-N concentration in LP70 was significantly lower than those of LP40 and LP50, whereas the other chemical properties showed no significant difference among the soils. The cy19:0 to $18:1{\omega}7c$ ratio was significantly lower in LP70 than in LP 40 and LP50 showing the negative correlation of light level with microbial stresses (p < 0.05). The soil microbial communities and the chemical properties that showed positive eigenvector coefficients for PC1 were the fungi to bacteria, fungi, arbuscular mycorrhizal fungi, and Gram-positive bacteria, whereas negative eigenvector coefficients were found for $NH_4$-N, actinomycetes, Gram-negative bacteria, and bacteria. Consequently, the amount of penetrating light was responsible for microbial compositions in the forest soils in correlation with the concentration of $NH_4$-N and soil temperature.

• 한국물환경학회지
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• 제26권4호
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• pp.608-613
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• 2010

Electricity generation of microbial fuel cells (MFC) is greatly affected by the kind of feed substrates because substrates would change microbial community of electrochemically active bacteria (EAB) able to transfer electrons to electrode. The effect of different substrates on electricity generation and microbial community of MFC was investigated. Two-chamber MFCs fed with acetate (A-MFC), butyrate (B-MFC), propionate (P-MFC), glucose (G-MFC) and a mixture (M-MFC) of the 4 substrates (acetate : butyrate : propionate : glucose = 1 : 1 : 1 : 1 as $COD_{Cr}$ base) were operated under continuous mode. The maximum power density was found from the M-MFC ($190W/m^3$) which showed the lowest internal resistance ($89{\Omega}$). The maximum power densities of the pure substrates feed MFCs were in order of A-MFC ($25W/m^3$), P-MFC ($21W/m^3$), B-MFC ($20W/m^3$) and G-MFC ($9W/m^3$). In DGGE analysis, the microbial community structure in suspension was quite different from each others depending on feed substrates, while the community structure in the biofilm was relatively similar regardless of the substrates. This result suggests that the feed substrates would affect the microbial community of suspended growth bacteria than attached growth bacteria resulting in difference of electricity generation in MFCs.

• Asian-Australasian Journal of Animal Sciences
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• 제24권9호
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• pp.1204-1210
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• 2011

Objective of this study was to examine the effect of sodium nitroprusside (SNP), a nitric oxide (NO) donor on steroid synthesis, growth and apoptosis of buffalo granulosa cells (GCs) in vitro. Follicular fluid of antral follicles (3-5 mm diameter) was aspirated and GCs were cultured in 0 (control), $10^{-3}$, $10^{-5}$, $10^{-7}$, $10^{-9}\;M$ of SNP for 48 h. To evaluate whether this effect was reversible, GCs were cultured in presence of $10^{-5}\;M$ SNP+1.0 mM $N^{\omega}$-nitro-L-arginine methyl ester (L-NAME) a NO synthase (NOS) inhibitor or hemoglobin (Hb, $1.0{\mu}g$) as NO scavenger. Nitrate/nitrite concentration was evaluated by Griess method, progesterone and estradiol concentrations by RIA and apoptosis by TUNEL assay. SNP ($10^{-3}$, $10^{-5}$, $10^{-7}\;M$) significantly (p<0.05) inhibited estradiol and progesterone synthesis, growth, disorganized GCs aggregates and induced apoptosis in a dose dependent manner. However, $10^{-9}\;M$ SNP induced the progesterone synthesis and stimulated GCs to develop into a uniform monolayer. Combination of SNP $10^{-5}$ M+L-NAME strengthened the inhibitory effect while, SNP+Hb together reversed these inhibitory effects. In conclusion, SNP at greater concentrations ($10^{-3}$, $10^{-5}$ and $10^{-7}\;M$) has a cytotoxic effect and it may lead to cell death whereas, at a lower concentration ($10^{-9}\;M$) induced progesterone synthesis and growth of GCs. These findings have important implications that NOS derived NO are involved at physiological level during growth and development of buffalo GCs which regulates the steroidogenesis, growth and apoptosis.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 춘계학술대회 논문집 전자세라믹스 센서 및 박막재료 반도체재료 일렉트렛트 및 응용기술
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• pp.72-75
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• 2000

The effect of $Al_2O_3+Y_2O_3$ additives on fracture toughness of ${\beta}-SiC-TiB_2$ composites by hot-pressed sintering were investigated, The ${\beta}-SiC-TiB_2$ ceramic composites were hot-presse sintered and annealed by adding 4, 8, 12wt% $Al_2O_3+Y_2O_3$(6 : 4wt%) powder as a liquid forming additives at low temperature($1800^{\circ}C$) for 4h. In this microstructures, the relative density is over 97% of the theoretical density and the porosity increased with increasing $Al_2O_3+Y_2O_3$ contents because of the increasing tendency of pore formation. But the fracture toughness showed the highest of $7.0MPa{\cdot}m^{1/2}$ for composites added with 12wt% $Al_2O_3+Y_2O_3$ additives at room temperature. The electrical resistivity showed the lowest of $1.59\times10^{-3}\Omega{\cdot}cm$ for composite added with 8wt% $Al_2O_3+Y_2O_3$ additives at room temperature and is all positive temperature coefficient resistance(PTCR} against temperature up to $700^{\circ}C$.

• 한국전기전자재료학회논문지
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• 제23권9호
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• pp.681-684
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• 2010

The $TiO_2$/ZnS/Ag/ZnS/$TiO_2$ multilayered structure for the transparent electrodes in plasma display panel was designed by essential macleod program (EMP) and the multilayered film was deposited on a glass substrate by direct-current (DC)/radio-frequency (RF) magnetron sputtering system. During film deposition process, the Ag layer in $TiO_2$/Ag/$TiO_2$ structure became oxidized and the filter characteristic was degraded easily. In this study, ZnS layer was adopted as a diffusion blocking layer between $TiO_2$ and Ag to prevent the oxidation of Ag layer efficiently in $TiO_2$/ZnS/Ag/ZnS/$TiO_2$ structure. Based on the AES depth profiling analysis, the Ag layer was effectively protected by the ZnS layer as compared with the $TiO_2$/Ag/$TiO_2$ multilayered films without ZnS as an antioxidant layer. The 3 times stacked $TiO_2$/ZnS/Ag/ZnS/$TiO_2$ films have low sheet resistance of $1.22{\Omega}/{\square}$ and luminous transmittance was as high as 62% in the visible ranges.

• 한국전기전자재료학회논문지
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• 제25권3호
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• pp.204-208
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• 2012

$TiO_2$ ($Ti_{1-x}Nb_xO_2$, x= 0.04~0.06) transparent conducting oxide film was fabricated by RF magnetron sputtering process and their electrical, optical, stability properties were studied. When the Nb 4 at% sputtering target was used with RF power 120 W, pressure 8 mTorr, post-annealing temperature $600^{\circ}C$, the resistivity of TNO film was $4{\times}10^{-4}\;{\Omega}-cm$. The optical transmittance in the visible wavelength was ca. 86%. TNO films require heat treatment during or after the deposition process. When the film was deposited at room temperature and post-annealed at $600^{\circ}C$, the lowest resistivity was obtained. When the TNO film was exposed to high temperature and humidity, the resistivity of the film was rather decreased. The stability to temperature and humidity implies that the TNO film could be a appropriate candidate for In-free, ZnO-free transparent conducting oxide materials.

• 한국전기전자재료학회논문지
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• 제24권7호
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• pp.568-573
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• 2011

AZO (Al doped ZnO) thin films were deposited on the quartz substrates with thickness variation from 25 to 300 nm by using PLD (pulsed laser deposition). XRD (x-ray diffractometer), SPM (scanning probe microscopy), Hall effect measurement and uv-visible spectrophotometer were employed to investigate the structural, morphological, electrical and optical properties of the thin films. XRD results demonstrated that films were preferrentially oriented along the c-axis and crystallinity of film was improved with increase of film thickness. As for the surface morphologies, the mean diameter and root mean square of grains were increased as the film thickness was increased. When the film thickness was 200 nm, the lowest resistivity of $4.25{\times}10^{-4}\;{\Omega}cm$ obtained with carrier concentration of $6.84{\times}10^{20}\;cm^{-3}$ and mobility of $21.4\;cm^2/V{\cdot}S$. All samples showed more than 80% of transmittance in the visible range. Upon these results, it is found that the samples thickness can affect their structural, morphological, optical and electrical properties. This study suggests that the resistivity can be improved by controlling film thickness.

• 한국전기전자재료학회논문지
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• 제30권3호
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• pp.162-169
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• 2017

Indium tin oxide (ITO) thin films show a low sheet resistance and high transmittance in the visible range of the spectrum. Therefore, they play an important role as transparent electrodes for flat panel displays. However, their resistivity is rather high for use as a transparent electrode in large displays. One way to improve electrical and optical properties in large displays is to use ITO/Ag/ITO multilayer films. ITO/Ag/ITO multilayer films have lower sheet resistance than single layer ITO films with the same thickness. Prior to the ITO/Ag/ITO multilayer experiments, optimal condition for thickness change are necessary. Their thicknesses were deposited differently in order to analyze electrical and optical properties. However, when optimal single film characteristics are applied to ITO/Ag/ITO multilayer films, other phenomena appeared. After analyzing the electrical and optical properties by changing ITO and Ag film thickness, ITO/Ag/ITO multilayer films were optimized. By combining ITO film at $586\;{\AA}$ and Ag film at 10 nm, the ITO/Ag/ITO multilayer films showed optimized high optical transmittance of 87.65%, and the low sheet resistance of $5.5{\Omega}/sq$.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2009년도 제40회 하계학술대회
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• pp.1096_1097
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• 2009

Aluminium doped zinc oxide(ZnO:Al) thin film, which is mainly used as a transparent conducting electrode in electronic devices, has many advantages compared with conventional indium tin oxide(ITO). In this paper in order to investigate the possible application of ZnO:Al thin films as a transparent conducting electrode for flexible film-typed dye sensitized solar cell (FT-DSCs), ZnO:Al and ITO thin films were prepared on the polyethylene terephthalate (PET) substrate by r. f. magnetron sputtering method. Specially one-inched FT-DSCs using either a ZnO:Al or ITO electrode were also fabricated separately under the same manufacturing conditions. Some properties of both the FT-DSCs with ZnO:Al and ITO transparent electrodes, such as conversion efficiency, fill factor, and photocurrent were measured and compared with each other. The results showed that by doping the ZnO target with 2 wt% of $Al_2O_3$, the film deposited at discharge power of 200W resulted in the minimum resistivity of $2.2\times10^{-3}\Omega/cm$ and at ransmittance of 91.7%, which are comparable with those of commercially available ITO. Two types of FT-DSCs showed nearly the same tendency of I-V characteristics and the same value of conversion efficiencies. Efficiency of FT-DSCs using ZnO:Al electrode was around 2.6% and that of fabricated FT-DSCs using ITO was 2.5%. This means that ZnO:Al thin film can be used in FT-DSCs as a transparent conducting layer.